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    Abstract: No abstract text available
    Text: t>LS3T31 0024737 T4T « A P X N AMER PHILIPS/DISCRETE BF990AR L7E T> J V. SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic S O T 1 4 3 R microminiature envelope with source and substrate interconnected, intended for U H F applications, such as U H F television tuners and


    OCR Scan     		PDF LS3T31 BF990AR

    BUK455-500A

    Abstract: BUK455-500B RFTN-1 BUK455 25KW T0220AB
    Text: N AMER PHI LI PS /D ISCR ET E 2 SE D o a a D s iD a BUK455-500A BUK455-500B PowerMOS transistor T “ £ 7 - IS GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF T-37-IS BUK455 -500A -500B T0220AB; BUK455-500A BUK455-500B RFTN-1 25KW T0220AB