2SC4225
Abstract: 9015 transistor
Text: DATA SHEET SILICON TRANSISTOR 2SC4225 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4225 is an NPN silicon epitaxial transistor designed for low in millimeters noise amplifier at VHF through UHF band.
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2SC4225
2SC4225
9015 transistor
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NTE359
Abstract: 8-32N
Text: NTE359 Silicon NPN Transistor RF & Microwave Transistor Description: RF Power Transistor 20W − 175 MHz Features: Specified 28 Volt, 175MHz Characteristics Output Power = 20 Watts Minimum Gain = 8.2dB Efficiency = 60% Characterized from 125 to 175MHz Includes Series Equivalent Impedances
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NTE359
175MHz
175MHz
8-32-NC-3A
NTE359
8-32N
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semefab
Abstract: TRANSISTOR ARRAY semefab+051
Text: PPS 171 Analogue Transistor Array Process Preview Datasheet Rev 1.0 July 2000 Description The Semefab PPS171 Analogue Transistor Array process is available on a foundry basis and is qualified for use with the 700 Series Linear Bipolar Semicustom Arrays from Array Design.
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PPS171
33x33
118x119
semefab
TRANSISTOR ARRAY
semefab+051
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFT93W PNP 4 GHz wideband transistor Product specification Supersedes data of November 1992 March 1994 NXP Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic,
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BFT93W
OT323
BFT93W
BFT93.
MBC870
R77/01/pp22
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2SC5436
Abstract: 2SC5800 uPA863TD-Q2
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA863TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor
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PA863TD
2SC5436,
2SC5800)
S21e2
2SC5436
2SC5800
2SC5436
2SC5800
uPA863TD-Q2
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2SC5603
Abstract: 2SC5676
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA846TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low noise operation • 2 different built-in transistors (2SC5603, 2SC5676) Q1: Built-in high gain transistor
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PA846TD
2SC5603,
2SC5676)
S21e2
2SC5603
2SC5676
2SC5603
2SC5676
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ic 901
Abstract: 2SC5603 2SC5676 uPA846TC-T1
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA846TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • 2 different built-in transistors (2SC5603, 2SC5676) Q1: 13.5 GHz fT high-gain transistor
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PA846TC
2SC5603,
2SC5676)
S21e2
2SC5603
2SC5676
ic 901
2SC5603
2SC5676
uPA846TC-T1
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2SC5435
Abstract: 2SC5600 IC 14558 5mA25
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA841TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5600) Q1: Built-in high-gain transistor
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PA841TD
2SC5435,
2SC5600)
S21e2
2SC5435
2SC5600
2SC5435
2SC5600
IC 14558
5mA25
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA862TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor
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PA862TD
2SC5435,
2SC5800)
2SC5435
2SC5800
P15685EJ1V0DS
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9904 120 13843
Abstract: 2SC5435 2SC5800 nec 4308
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA862TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor
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PA862TD
2SC5435,
2SC5800)
S21e2
2SC5435
2SC5800
9904 120 13843
2SC5435
2SC5800
nec 4308
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702 transistor smd code
Abstract: HTT1132E 853 smd 6-pin 2SC5849 2SC5872 equivalent ZO 607 smd transistor 805 239 0532 smd transistor 718 transistor smd 661 752
Text: HTT1132E Silicon NPN Epitaxial Twin Transistor REJ03G0008-0100Z Rev.1.00 Apr.14.2003 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 6 Leads: 1.2 x 0.8 x 0.5 mm Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5872
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HTT1132E
REJ03G0008-0100Z
2SC5872
2SC5849
702 transistor smd code
HTT1132E
853 smd 6-pin
2SC5849
2SC5872
equivalent ZO 607
smd transistor 805 239
0532
smd transistor 718
transistor smd 661 752
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st zo 607
Abstract: 2SC5436 2SC5800 30614
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR PA863TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor
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PA863TD
2SC5436,
2SC5800)
S21e2
2SC5436
2SC5800
st zo 607
2SC5436
2SC5800
30614
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2SC5005
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the
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2SC5005
2SC5005
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2SC4571
Abstract: 2SC4571-T1 2SC4571-T2
Text: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4571 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the
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2SC4571
2SC4571
SC-70)
2SC4571-T1
2SC4571-T1
2SC4571-T2
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2SC5736
Abstract: 2SC5737 5609 npn transistor marking 2M
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA851TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5737, 2SC5736) Q1: Low noise transistor
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PA851TC
2SC5737,
2SC5736)
S21e2
2SC5737
2SC5736
2SC5736
2SC5737
5609 npn transistor
marking 2M
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b 595 transistor
Abstract: transistor 5 Amp 700 volt MA4T24300 transistor b 595 MA4T24335
Text: Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistor MA4T243 Series MA4T243 Series Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors Features • • • • • Case Style Low Phase Noise Oscillator Transistor 200 mW Driver Amplifier Transistor
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MA4T243
MA4T24300
b 595 transistor
transistor 5 Amp 700 volt
transistor b 595
MA4T24335
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2SC5435
Abstract: 2SC5437 NEC 2505 nj
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA836TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5437) Q1: Built-in low noise, high-gain transistor
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PA836TD
2SC5435,
2SC5437)
S21e2
2SC5435
2SC5437
2SC5435
2SC5437
NEC 2505 nj
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2SC5435
Abstract: 2SC5786 NEC 7815
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA860TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5786) Q1: High-gain transistor
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PA860TC
2SC5435,
2SC5786)
S21e2
2SC5435
2SC5786
2SC5435
2SC5786
NEC 7815
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2SC5436
Abstract: 2SC5786 4550 nec IC 7432 data
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA861TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5786) Q1: High-gain transistor
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PA861TC
2SC5436,
2SC5786)
S21e2
2SC5436
2SC5786
2SC5436
2SC5786
4550 nec
IC 7432 data
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transistor D 2395
Abstract: NEC 2501 re 443
Text: DATA SHEET SILICON TRANSISTOR 2SC4225 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4225 is an NPN silicon epitaxial transistor designed for low in millimeters noise am plifier at VHF through UHF band.
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2SC4225
2SC4225
transistor D 2395
NEC 2501 re 443
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE t iT E I> • bb53^31 □D3TD74 OIL A APX BLV59 U.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-171 envelope primarily intended fo r use as linear amplifier in u.h.f. television transmitters. Features:
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D3TD74
BLV59
OT-171
002T0fl2
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ZO 107 MA
Abstract: 341S
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in low noise and small signal am plifiers from VHF band to L band. Low
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2SC5009
2SC5009
ZO 107 MA
341S
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4571 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS Units: mm OSC/MIX. 2 . 1±0.1 It is suitable tor a high density surface mount assembly since the
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2SC4571
2SC4571
SC-70)
2SC4571-T1
2SC4571-T2
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4570 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS Units: mm OSC/MIX. 2.1 ±0.1 It is suitable for a high density surface mount assembly since the
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2SC4570
2SC4570
SC-70)
4570-T
PACK878
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