TRANSISTOR 10 Search Results

TRANSISTOR 10 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR 10 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
transistor marking DG Abstract: TRANSISTOR SMD MARKING CODE pa marking code DG SMD Transistor dg transistor smd NXP SMD TRANSISTOR MARKING CODE SMD transistor code 132 transistor smd code marking 101 transistor smd code marking 102 TRANSISTOR SMD CODE PACKAGE SOT363 marking code BV SMD Transistor Text: PUML1/DG 50 V, 200 mA NPN general-purpose transistor/ 100 mA NPN resistor-equipped transistor Rev. 01 — 14 July 2008 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistor and NPN Resistor-Equipped Transistor RET in one	Original	PDF	OT363 SC-88) AEC-Q101 transistor marking DG TRANSISTOR SMD MARKING CODE pa marking code DG SMD Transistor dg transistor smd NXP SMD TRANSISTOR MARKING CODE SMD transistor code 132 transistor smd code marking 101 transistor smd code marking 102 TRANSISTOR SMD CODE PACKAGE SOT363 marking code BV SMD Transistor
NPN EBC SOT-23 Abstract: SOT-23 EBC NPN transistor ECB TO-92 Text: Power Transistor & Small Signal Transistor Power Transistor & Small Signal Transistor MAXIMUM RATINGS NPN BVCEO BVCES IC PC PIN STYLE PNP BVCBO BVCES BVCEV V (V) (A) (W) 123 PJP110A PNP -20 -12 -10 75 BCE TO-220 PJP168A PNP -20 -13 -18 100 BCE TO-220 PJ13003	Original	PDF	PJP110A O-220 PJP168A PJ13003 PJ13005 PJ13007 NPN EBC SOT-23 SOT-23 EBC NPN transistor ECB TO-92
KIA78pI Abstract: transistor KIA78p TRANSISTOR 2N3904 khb9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb2D0N60P Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC	Original	PDF	2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E KIA78pI transistor KIA78p TRANSISTOR 2N3904 khb9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb2D0N60P
STD123AS Abstract: No abstract text available Text: STD123AS Semiconductor NPN Silicon Transistor Features • High β& low saturation transistor. hFE=400 Min. @VCE=1V, Ic=100mA • Suitable for large current drive directly. • Application for IRED Drive transistor in remote transmitter. Ordering Information	Original	PDF	STD123AS 100mA OT-23 KSD-T5C016-000 STD123AS
Untitled Abstract: No abstract text available Text: UTC PZTA14 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC PZTA14 is a Darlington transistor. FEATURES 1 2 3 Collector-Emitter Voltage: VCES = 30V Collector Power Dissipation: Pc max = 1000 mW 4 SOT-223 1:EMITTER ABSOLUTE MAXIMUM RATINGS	Original	PDF	PZTA14 PZTA14 OT-223 SYMBO1000 100mA 100mA 100MHz QW-R207-004
MPSA11 Abstract: MPS-a10 MPSA10 100MHZ transistor emitter collector base Text: MPSA 10 / 11 NPN Silicon Epitaxial Planar Transistor VHF / UHF TRANSISTOR. The transistor is subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package	Original	PDF	100MHZ MPSA10 MPSA11 MPSA11 MPS-a10 MPSA10 100MHZ transistor emitter collector base
1030mhz Abstract: 2TD12 HV400 SM200 1090mhz Text: HVV1011-040 HVV1214-075 L-Band Avionics Pulsed Power Transistor HVV1011-040 The innovative Semiconductor Company! HVV1011-040 L-Band Radar Pulsed Power Transistor 1030-1090MHz, 50!s Pulse, 5% Transistor Duty L-Band Avionics Pulsed Power L-Band Avionics Pulsed	Original	PDF	HVV1011-040 HVV1214-075 HVV1011-040 1030-1090MHz, HVV1011-035 1030mhz 2TD12 HV400 SM200 1090mhz
MPSA11 Abstract: MPSA10 100MHZ Text: MPSA 10 / 11 NPN Silicon Epitaxial Planar Transistor VHF / UHF TRANSISTOR. The transistor is subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package	Original	PDF	100MHZ MPSA10 MPSA11 MPSA11 MPSA10 100MHZ
MPSA11 Abstract: 100MHZ MPSA10 Text: MPSA 10 / 11 NPN Silicon Epitaxial Planar Transistor VHF / UHF TRANSISTOR. The transistor is subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package	Original	PDF	100MHZ MPSA10 MPSA11 MPSA11 100MHZ MPSA10
NESG2046M33 Abstract: NESG2107M33 Text: PRELIMINARY DATA SHEET NPN SiGe RF TWIN TRANSISTOR µPA880TS NPN SiGe RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PACKAGE) FEATURES • 2 different built-in transistors (NESG2046M33, NESG2107M33) Q1: High gain SiGe transistor	Original	PDF	PA880TS NESG2046M33, NESG2107M33) S21e2 NESG2046M33 NESG2107M33 NESG2046M33 NESG2107M33
d1726 Abstract: 2SC4336 Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4336 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm The 2SC4336 is a mold power transistor developed for high- 10.5 MAX. speed switching and features a very low collector-to-emitter	Original	PDF	2SC4336 2SC4336 d1726
Untitled Abstract: No abstract text available Text: DATA SHEET COMPOUND TRANSISTOR BN1A4Z on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 10 kΩ) • Complementary transistor with BA1A3Q ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)	Original	PDF
2SC5800 Abstract: NESG2046M33 Text: PRELIMINARY DATA SHEET NPN SILICON + SiGe RF TWIN TRANSISTOR µPA869TS NPN SILICON + SiGe RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PACKAGE) FEATURES • 2 different built-in transistors (NESG2046M33, 2SC5800) Q1: High gain SiGe transistor	Original	PDF	PA869TS NESG2046M33, 2SC5800) S21e2 NESG2046M33 2SC5800 2SC5800 NESG2046M33
Untitled Abstract: No abstract text available Text: DATA SHEET COMPOUND TRANSISTOR BN1A4Z on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 10 kΩ) • Complementary transistor with BA1A3Q ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)	Original	PDF

d1616 Abstract: No abstract text available Text: DATA SHEET COMPOUND TRANSISTOR AA1A4Z on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 10 kΩ) • Complementary transistor with AN1A4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)	Original	PDF
BA1A4Z Abstract: No abstract text available Text: DATA SHEET COMPOUND TRANSISTOR BA1A4Z on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 10 kΩ) • Complementary transistor with BA1A4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)	Original	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD UN1596 Preliminary NPN SILICON TRANSISTOR NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR DESCRIPTION The UTC UN1596 are series of NPN silicon planar transistor, which has gain of 500 at IC=100mA.It can be used in such	Original	PDF	UN1596 UN1596 100mA 100mA UN1596L-AA3-R UN1596G-AA3-R OT-223 QW-R207-021
Untitled Abstract: No abstract text available Text: DATA SHEET COMPOUND TRANSISTOR BA1A4Z on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 10 kΩ) • Complementary transistor with BA1A4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)	Original	PDF
mcl610 Abstract: MCA81 MCL611 Transistor Data chart mcl600 mcs6200 transistor 6 B transistor c 2500 MCT4R MCL601 Text: 112 O p to iso Wlato rs A* * A, ~ PACKAGE PRODUCT KEY OUTPUT FORMAT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR	OCR Scan	PDF	MCT210 MCT26 MCT66 MCL600 MCL610 MCT81 MCA81 MCL611 Transistor Data chart mcl600 mcs6200 transistor 6 B transistor c 2500 MCT4R MCL601
MCT8 opto Abstract: c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35 Text: 112 O p to iso lato rs A * * W A , ~ PACKAGE PRODUCT KEY OUTPUT FORM AT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR	OCR Scan	PDF	MCT210 MCT26 MCT66 C1255 10TT1. MCT8 opto c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35
97CC Abstract: transistor ESM 16 transistor ESM 30 ESM18 transistor ESM 18 Text: ESM 18 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILIC IU M NPN, TRIPLE DIFFUSE High current fast switching transistor Transistor de commutation rapide fort courant V CEO 100 V Amplification BF ou H F grands signaux •c 25 A Thermal fatigue inspection	OCR Scan	PDF	CB-19 97CC transistor ESM 16 transistor ESM 30 ESM18 transistor ESM 18
Untitled Abstract: No abstract text available Text: TRANSISTOR MODULE SQQ300AA100 UL;E76102 M S Q D 3 0 0 A A 10 0 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for	OCR Scan	PDF	SQQ300AA100 E76102 SQD300AA100
1G05 Abstract: 2SA1078 2SC2528 Text: FUJITSU SILICON HIGH SPEED POWER TRANSISTOR 2SA 1078 September 1979 SILICON PNP RING EM ITTER TRANSISTOR RET -a G The 2 S A 1 0 7 8 is a silicon PNP general purpose, m edium pow er transistor fabricated w ith Fujitsu's unique Ring E m itte r Transistor (R E T ) technology. R E T devices are	OCR Scan	PDF	2SA1078 2SA1078 2SC2528, 10MHz 20VilE 300ms 1G05 2SC2528
u101b Abstract: No abstract text available Text: DATA SHEET COMPOUND TRANSISTOR _ j f P A 101 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES OUTLINE DIMENSIONS Units in mm • BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: • OUTSTANDING hFE LINEARITY • TW O PACKAGE O PTIO NS: (Each Transistor has fr 9 GHz)	OCR Scan	PDF	uPA101B 14-pin tPA101G u101b

TRANSISTOR 10 Search Results

TRANSISTOR 10 Result Highlights (5)

TRANSISTOR 10 Datasheets Context Search

transistor marking DG

NPN EBC SOT-23

KIA78*pI

STD123AS

Untitled

MPSA11

1030mhz

MPSA11

MPSA11

NESG2046M33

d1726

Untitled

2SC5800

Untitled

d1616

BA1A4Z

Untitled

Untitled

mcl610

MCT8 opto

97CC

Untitled

1G05

u101b