marking a7
Abstract: A7 DIODE marking A7 diode DIODE A7 MA147 swithing
Text: MA147 SWITHING DIODE Package:SOT-23 High Switching Speed ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Unit Reverse Voltage VR 80 Vdc Peak Repetitive Reverse Voltage VRM 80 V IF 100 Forward Current Single Series Forward Continuous Single Current
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MA147
OT-23
100mA
100uA
MA147
marking a7
A7 DIODE
marking A7 diode
DIODE A7
swithing
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SEMTECH MARKING
Abstract: 1SS390
Text: 1SS390 SILICON EPITAXIAL PLANAR DIODE Band swithing diode PINNING FEATURES Extremely small surface mounting type. ● 1 Cathode 2 Anode High reliability. ● DESCRIPTION PIN 2 1 . WC Top View Marking Code: "WC" Simplified outline SOD-523 and symbol APPLICATIONS
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1SS390
OD-523
OD-523
SEMTECH MARKING
1SS390
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RTGN14BAP
Abstract: 4503 swithing rtgn14
Text: 〈SMALL-SIGNAL TRANSISTOR〉 RTGN14BAP TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE DISCRIPTION RTGN14BAP is a one chip transistor with built-in bias transistor. FEATURE ● Built-in bias resistor （R2=10kΩ） ● High collector current IC=1A
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RTGN14BAP
RTGN14BAP
4503
swithing
rtgn14
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RTGN131AP
Abstract: 4503 rtgn131
Text: 〈SMALL-SIGNAL TRANSISTOR〉 RTGN131AP TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE DISCRIPTION RTGN131AP is a one chip transistor with built-in bias transistor. FEATURE ● Built-in bias resistor （R1=1kΩ,R2=1kΩ） ● High collector current IC=1A
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RTGN131AP
RTGN131AP
4503
rtgn131
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Untitled
Abstract: No abstract text available
Text: Ordering number:EN5051 FX208 N-Channel Silicon MOSFET Very High-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Very high-speed switching. · 2.5V drive. unit:mm 2121 [FX208] Swithing Time Test CIrcuit 1:No Contact 2:Gate
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EN5051
FX208
FX208]
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morocco tip32c
Abstract: TIP32C malaysia tip32c TIP31c PNP Transistor st 393 JESD97 TIP31C
Text: TIP32C Power transistor Applications • . Linear and swithing industrial equipment Description The TIP32C is a silicon Epitaxial-base PNP power transistor in Jedec TO-220 plastic package. It is intented for use in medium power linear and switching applications.
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TIP32C
TIP32C
O-220
O-220
TIP31C.
morocco tip32c
malaysia tip32c
TIP31c PNP Transistor
st 393
JESD97
TIP31C
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2N6493
Abstract: npn DARLINGTON 10A
Text: Inchange Semiconductor Product Specification 2N6493 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·High DC current gain ·DARLINGTON APPLICATIONS ·General-purpose power amplifier and low frequency swithing applications
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2N6493
100mA
2N6493
npn DARLINGTON 10A
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 2SA1012 TRANSISTOR Plastic-Encapsulate Transistors PNP FEATURES HIGH CURRENT SWITCHING APPLICATIONS. . Low Collector Saturation Voltage : VCE(SAT) = - 0.4V(MAX) at IC= - 3A . High Speed Swithing Time : tstg = 1.0us (Typ.)
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O-220
2SA1012
2SC2562
150mA
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2N6492
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification 2N6492 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·High DC current gain ·DARLINGTON APPLICATIONS ·General-purpose power amplifier and low frequency swithing applications
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2N6492
100mA
2N6492
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2N6494
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification 2N6494 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·High DC current gain ·DARLINGTON APPLICATIONS ·General-purpose power amplifier and low frequency swithing applications
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2N6494
100mA
2N6494
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1SS270
Abstract: marking code 2 SOD523
Text: 1SS270 SILICON EPITAXIAL PLANAR DIODE Band Swithing Diode Features • Extremely small surface mounting type • High reliability PINNING DESCRIPTION PIN Applications • High frequency switching 1 Cathode 2 Anode 2 1 K Top View Marking Code: "K" Simplified outline SOD-523 and symbol
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1SS270
OD-523
OD-523
1SS270
marking code 2 SOD523
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EN5051
Abstract: No abstract text available
Text: Ordering number:EN5051 FX208 N-Channel Silicon MOSFET Very High-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Very high-speed switching. · 2.5V drive. unit:mm 2121 [FX208] Swithing Time Test CIrcuit 1:No Contact 2:Gate
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EN5051
FX208
FX208]
EN5051
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1N4148 1206
Abstract: 1N4148 0603 1N4148 0805 1n4148 LL34 RM 1206 FHD4148 DIODE CHIP 1N4148 DIODE 1N4148 LL-34
Text: THICK FILM CHIP SWITHING DIODE THICK FILM CHIP SWITCHING DIODE FEATURES ROHS RoHS compliant 1N4148 The electrical performance is equal as that of 1N4148. Available for mass production,can help to reduce cost. With improved chip shape which can effectively reduce the pick up error during high speed SMT.
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1N4148
1N4148.
FHD41481206
LL-34
GB/4589
1N4148 1206
1N4148 0603
1N4148 0805
1n4148 LL34
RM 1206
FHD4148
DIODE CHIP 1N4148
DIODE 1N4148 LL-34
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MA2DF22
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Fast Recovery Diodes (FRD) MA2DF22 Silicon mesa type For high frequency retification (Second rectification in swithing mode power supply) • Package Features M Di ain sc te on na tin nc
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2002/95/EC)
MA2DF22
O-220D-B1
MA2DF22
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2SA1012
Abstract: 50V 1A PNP power transistor
Text: 2SA1012 PNP TO-220 Transistor TO-220 1. BASE 2. COLLECTOTR 3. EMITTER Features 1 2 3 HIGH CURRENT SWITCHING APPLICATIONS. Low Collector Saturation Voltage : VCE(SAT) = - 0.4V(MAX) at IC= - 3A High Speed Swithing Time : tstg = 1.0us (Typ.) Complementary to 2SC2562
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2SA1012
O-220
O-220
2SC2562
tp300S,
-100A,
150mA
50V 1A PNP power transistor
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Fast Recovery Diodes (FRD) MA2DF22 Silicon mesa type For high frequency retification (Second rectification in swithing mode power supply) • Package Features Code TO-220D-B1 Pin Name
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2002/95/EC)
MA2DF22
O-220D-B1
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on 222 transistor
Abstract: 4503 ISAHAYA Diagrams
Text: 〈SMALL-SIGNAL TRANSISTOR〉 RTGN226AP TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE DISCRIPTION RTGN226AP is a one chip transistor with built-in bias transistor. FEATURE ● Built-in bias resistor （R1=0.22kΩ,R2=2.2kΩ）
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RTGN226AP
RTGN226AP
on 222 transistor
4503
ISAHAYA
Diagrams
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1SS390
Abstract: No abstract text available
Text: 1SS390 SILICON EPITAXIAL PLANAR DIODE Band swithing diode PINNING FEATURES Extremely small surface mounting type. ● High reliability. ● DESCRIPTION PIN 1 Cathode 2 Anode 2 1 . WC Top View Marking Code: "WC" Simplified outline SOD-523 and symbol APPLICATIONS
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1SS390
OD-523
OD-523
1SS390
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d1609c
Abstract: SFT1203 d1609 A1403 ITR07218 ITR07219 ITR07220 ITR07221 ITR07222
Text: SFT1203 Ordering number : ENA1403 SANYO Semiconductors DATA SHEET SFT1203 NPN Triple Diffused Planar Silicon Transistor Swithing Regulator Applications Features • High breakdown voltage. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage
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SFT1203
ENA1403
A1403-4/4
d1609c
SFT1203
d1609
A1403
ITR07218
ITR07219
ITR07220
ITR07221
ITR07222
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2SK2150
Abstract: k2150
Text: TOSHIBA SEMICONDUCTOR TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 2 150 SILICON N CHANNEL MOS TYPE TECHNICAL DATA t i -M O STT HIGH SPEED.HIGH CURRENT SWITHING APPLICATIONS. CHOPPER REGULATOR. DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. INDUSTRIAL APPLICATIONS
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2SK2150
k2150
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Untitled
Abstract: No abstract text available
Text: TOSHIBA SEMICONDUCTOR TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 2 150 SILICON N CHANNEL MGS TYPE t i -M O S T T TECHNICAL DATA HIGH SPEED. HIGH CURRENT SWITHING APPLICATIONS. CHOPPER REGULATOR. DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. INDUSTRIAL APPLICATIONS
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2SK2150
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1SS300
Abstract: No abstract text available
Text: TOSHIBA 1SS300 1 SS300 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITHING APPLICATION. • • • • Small Package Low Forward Voltage Fast Reverse RecoveryTime Small Total Capacitance 2.1 ± 0.1 : SC-70 : Vjt 3 = 0.92V (Typ.)
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1SS300
SC-70
961001EAA2'
1SS300
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Untitled
Abstract: No abstract text available
Text: GI910 THRU GI917 SOFT RECOVERY, MEDIUM-SWITHING PLASTIC RECTIFIER VOLTAGE - 50 to 800 Volts CURRENT - 3.0 Amperes FEATURES D 0 -2 0 1 A D . 2 1 0 5 . 3 .190 ( 4 . 8 ) D IA . L 1 . 0 ( 2 5 .4 ) M IN. ♦ High surge current capability ♦ Plastic package has Underwriters Laboratory
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GI910
GI917
D0-201AD
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Untitled
Abstract: No abstract text available
Text: 1SS300 TO SHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS300 ULTRA HIGH SPEED SWITHING APPLICATION. • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance : SC-70 : Vp 3 = 0.92V (Typ.) : trr = 1.6ns (Typ.)
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1SS300
SC-70
61IBA
961001EAA2'
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