Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SB624 Search Results

    2SB624 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SB624-T2B-A Renesas Electronics Corporation Small Signal Bipolar Transistors, MM, / Visit Renesas Electronics Corporation
    2SB624-T1B-AT Renesas Electronics Corporation Small Signal Bipolar Transistors, MM, / Visit Renesas Electronics Corporation
    2SB624(0)-T1B-A Renesas Electronics Corporation Small Signal Bipolar Transistors Visit Renesas Electronics Corporation
    2SB624-T1B-A Renesas Electronics Corporation Small Signal Bipolar Transistors, MM, / Visit Renesas Electronics Corporation
    2SB624A-T1B-AT Renesas Electronics Corporation Small Signal Bipolar Transistors, MM, / Visit Renesas Electronics Corporation
    SF Impression Pixel

    2SB624 Price and Stock

    NEC Electronics Group 2SB624-T1B

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SB624-T1B 527
    • 1 $0.8
    • 10 $0.8
    • 100 $0.36
    • 1000 $0.24
    • 10000 $0.24
    		Buy Now

    NEC Electronics Group 2SB624-T1B(BV3)

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SB624-T1B(BV3) 4,880
    • 1 $0.74
    • 10 $0.74
    • 100 $0.74
    • 1000 $0.222
    • 10000 $0.148
    		Buy Now

    Renesas Electronics Corporation 2SB624-T1B-A(BV3/BV4)

    AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SB624-T1B-A(BV3/BV4) 716
    • 1 $0.86
    • 10 $0.86
    • 100 $0.387
    • 1000 $0.258
    • 10000 $0.258
    		Buy Now

    Renesas Electronics Corporation 2SB624-T1B-A(BV4)

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SB624-T1B-A(BV4) 961
    • 1 $0.86
    • 10 $0.86
    • 100 $0.387
    • 1000 $0.258
    • 10000 $0.258
    		Buy Now

    Renesas Electronics Corporation 2SB624-T1B-AT/S5

    Single Bipolar Transistor, PNP, 25 V, 700 mA, 200 mW, SC-59, 3 Pins, Surface Mount (Alt: 2SB624-T1B-AT/S5)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Asia 2SB624-T1B-AT/S5 18 Weeks 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    2SB624 Datasheets (29)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SB624 Galaxy Semi-Conductor Holdings Silicon Epitaxial Planar Transistor Original PDF
    2SB624 Kexin PNP Silicon Epitaxial Transistor Original PDF
    2SB624 NEC Semiconductor Selection Guide 1995 Original PDF
    2SB624 NEC Semiconductor Selection Guide Original PDF
    2SB624 Transys Electronics Plastic-Encapsulated Transistors Original PDF
    2SB624 TY Semiconductor PNP Silicon Epitaxial Transistor - SOT-23 Original PDF
    2SB624 Weitron PNP Epitaxial Planar Transistors Original PDF
    2SB624 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB624 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB624 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SB624 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB624 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB624 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SB624 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB624 NEC AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD Scan PDF
    2SB624BV1 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SB624BV1 NEC Audio Frequency Power Amplifier PNP Silicon Epitaxial Transistor Mini Mold Scan PDF
    2SB624BV2 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SB624BV2 NEC Audio Frequency Power Amplifier PNP Silicon Epitaxial Transistor Mini Mold Scan PDF
    2SB624BV3 Unknown Shortform Transistor PDF Datasheet Short Form PDF

    2SB624 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB624

    Abstract: 2SB624BV3 2SB624-BV4 2SB624-BV1 2SB624-BV2 2SB624-BV3 2SB624-BV5 2SD596 2SB624BV2 2SB624BV4
    Text: 2SB624 -0.7A , -30V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES   High DC Current Gain. hFE：200 Typ. (VCE= -1V, IC= -100mA) Complimentary to 2SD596


    Original     		PDF 2SB624 OT-23 hFE200 -100mA) 2SD596 2SB624-BV1 2SB624-BV2 2SB624-BV3 2SB624-BV4 2SB624-BV5 2SB624 2SB624BV3 2SB624-BV4 2SB624-BV1 2SB624-BV2 2SB624-BV3 2SB624-BV5 2SD596 2SB624BV2 2SB624BV4

    BV4 pnp

    Abstract: BV4 transistor 2SB624 2SD596
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB624 TRANSISTOR PNP SOT-23 1.BASE 2.EMITTER FEATURES 3.COLLECTOR High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. z z MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23 2SB624 OT-23 -100mA) 2SD596. -100mA -700mA -70mA -10mA BV4 pnp BV4 transistor 2SB624 2SD596

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SD596 SOT-23 TRANSISTOR NPN FEATURES z High DC Current gain. z Complimentary to 2SB624 1.BASE 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-23 2SD596 OT-23 2SB624 100mA 700mA 700mA, 10MHZ

    2SB624

    Abstract: 2SD596
    Text: 2SB624 SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER SOT-23 3 PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD 1 DESRIPTION 2 2SB624 is designed for use in small type equipements especially 1. 1.BASE 2.EMITTER 3.COLLECTOR mended for hybrid integrated circuit and other applications.


    Original     		PDF 2SB624 OT-23 The2SB624 -100mA) 2SD596 2SB624

    2SB624

    Abstract: No abstract text available
    Text: 2SB624 PNP Epitaxial Planar Transistors 3 P b Lead Pb -Free 1 2 SC-59 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Symbol Limits Unit Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5 V Collector Current IC -700 mA


    Original     		PDF 2SB624 SC-59 -500mA -250mA -200mA -100mA 16-Aug-05 SC-59 2SB624

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SD596 SOT-23 TRANSISTOR NPN FEATURES z High DC Current gain.hFE:200 TYP.(VCE=1V,IC=100mA) z Complimentary to 2SB624 1.BASE 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23 2SD596 OT-23 100mA) 2SB624 100mA 700mA 700mA, 10MHZ

    2SB624

    Abstract: 2SD596 BV4 transistor
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SB624 SOT-23-3L TRANSISTOR PNP FEATURES 1.BASE High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. z z 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23-3L 2SB624 OT-23-3L -100mA) 2SD596. -100mA -700mA -700mA, -70mA -10mA 2SB624 2SD596 BV4 transistor

    bv5 300

    Abstract: 2SB624
    Text: 2SB624 PNP Epitaxial Planar Transistors 3 P b Lead Pb -Free 2 1 SC-59 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Symbol Limits Unit Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5 V Collector Current IC -700 A Collector Power Dissipation


    Original     		PDF 2SB624 SC-59 -500mA -250mA -200mA -100mA 16-Aug-05 SC-59 bv5 300 2SB624

    sot-23 bv2

    Abstract: marking BV4 2SB624
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SB624 TRANSISTOR PNP SOT-23-3L FEATURES 1. BASE Power dissipation 3. COLLECTOR W (Tamb=25℃) 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current -0.7 A ICM: Collector-base voltage


    Original     		PDF OT-23-3L 2SB624 OT-23-3L -100mA -700mA -70mA -10mA sot-23 bv2 marking BV4 2SB624

    2SB624

    Abstract: No abstract text available
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Pb High DC current gain.hFE: 200TYP Lead-free VCE=-1.0V,IC=-100mA z 2SB624 Complimentary to the 2SD596. APPLICATIONS z Audio frequency amplifier. z Switching appilication.


    Original     		PDF 2SB624 200TYP -100mA) 2SD596. OT-23 BL/SSSTC014 2SB624

    sot-23 bv4

    Abstract: 2SB624 BV4 sot23 TRANSISTOR BV3 marking BV4 SOT23 BV2 2SD596 BV3 marking BV5 SOT-23 transistor BV4
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Pb High DC current gain.hFE: 200TYP Lead-free VCE=-1.0V,IC=-100mA z 2SB624 Complimentary to the 2SD596. APPLICATIONS z Audio frequency amplifier. z Switching appilication.


    Original     		PDF 2SB624 200TYP -100mA) 2SD596. OT-23 BL/SSSTC014 sot-23 bv4 2SB624 BV4 sot23 TRANSISTOR BV3 marking BV4 SOT23 BV2 2SD596 BV3 marking BV5 SOT-23 transistor BV4

    hFE-200 transistor PNP

    Abstract: 2SB624
    Text: 2SB624 SOT-23 Transistor PNP SOT-23 1.BASE 2.EMITTER 3.COLLECTOR Features — High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. — MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		PDF 2SB624 OT-23 OT-23 -100mA) 2SD596. -700mA -70mA -10mA -100A, hFE-200 transistor PNP 2SB624

    D1802

    Abstract: TRANSISTOR BV3 2SB624A 2SD596A nec marking power amplifier
    Text: DATA SHEET SILICON TRANSISTOR 2SB624A AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • Complementary to NEC 2SD596A NPN Transistor. • High DC Current Gain: hFE = 200 TYP. (VCE = −1.0 V, IC = −100 mA)


    Original     		PDF 2SB624A 2SD596A D1802 TRANSISTOR BV3 2SB624A nec marking power amplifier

    2SD596A

    Abstract: transistor DV3 D1788 2SB624
    Text: DATA SHEET SILICON TRANSISTOR 2SD596A AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • Complementary to NEC 2SB624 PNP Transistor. • High DC Current Gain: hFE = 200 TYP. (VCE = 1.0 V, IC = 100 mA)


    Original     		PDF 2SD596A 2SB624 2SD596A transistor DV3 D1788

    transistor dv4

    Abstract: 2SD596 10MHZ 2SB624
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SD596 SOT-23-3L TRANSISTOR NPN FEATURES z High DC Current gain.hFE:200 TYP.(VCE=1V,IC=100mA) z Complimentary to 2SB624 1.BASE 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23-3L 2SD596 OT-23-3L 100mA) 2SB624 100mA 700mA 700mA, 10MHZ transistor dv4 2SD596 10MHZ 2SB624

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SB624 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 High dc current gain. hFE:200TYP. VCE=-1V, IC=-100mA +0.1 1.3-0.1 +0.1 2.4-0.1 Micro package. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05


    Original     		PDF 2SB624 OT-23 200TYP. -100mA) Storag00

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB624 SOT-23 TRANSISTOR PNP FEATURES 1.BASE 2.EMITTER 3.COLLECTOR High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. z z MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-23 2SB624 OT-23 -100mA) 2SD596. -100mA -700mA -70mA -10mA

    transistor dv4

    Abstract: transistor DV3 2SD596 SOT23-3L
    Text: 2SD596 SOT-23-3L Transistor NPN SOT-23-3L 1.BASE 2.EMITTER 2.92 3.COLLECTOR 0.35 1.17 Features — — 2.80 1.60 High DC Current gain.hFE:200 TYP.(VCE=1V,IC=100mA) Complimentary to 2SB624 0.15 1.90 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF 2SD596 OT-23-3L OT-23-3L 100mA) 2SB624 700mA 700mA, 10MHZ 100mA transistor dv4 transistor DV3 2SD596 SOT23-3L

    hFE-200 transistor PNP

    Abstract: TRANSISTOR BV3
    Text: 2SB624 SOT-23-3L Transistor PNP SOT-23-3L 1.BASE 2.EMITTER 2.92 3.COLLECTOR 0.35 1.17 Features — — 2.80 1.60 High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. 0.15 1.90 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF 2SB624 OT-23-3L OT-23-3L -100mA) 2SD596. -700mA -700mA, -70mA -10mA hFE-200 transistor PNP TRANSISTOR BV3

    2SB624

    Abstract: TRANSISTOR BV3 BV4 transistor
    Text: Transys Electronics L I M I T E D SOT-23-3L Plastic-Encapsulated Transistors 2SB624 TRANSISTOR PNP SOT-23-3L FEATURES 1. BASE Power dissipation 3. COLLECTOR W (Tamb=25℃) 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current -0.7 A ICM: Collector-base voltage


    Original     		PDF OT-23-3L 2SB624 OT-23-3L -100mA -700mA -70mA -10mA 2SB624 TRANSISTOR BV3 BV4 transistor

    2SB624

    Abstract: 2SD596
    Text: NEC SILICON TRANSISTOR 2SB624 ^3£CTR0N DEVICE AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR M IN I MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SB624 is designed fo r use in small type equipments especially recom­ in millimeters 2.8 + 0.2


    OCR Scan     		PDF 2SB624 2SB624 2SD596 NECTOKJ22686

    Untitled

    Abstract: No abstract text available
    Text: S IL IC O N T R A N S IS T O R 2SB624 A U D IO F REQ U EN CY PO W ER A M P L IF IE R P N P S IL IC O N E P IT A X IA L T R A N S IS T O R M IN I M O L D D E S C R IP T IO N P A C K A G E D IM E N S IO N S The 2SB624 is designed for use in small type equipments especially recom­


    OCR Scan     		PDF 2SB624 2SB624

    2SB641 r

    Abstract: 2sb641 2SD659 2SD689 2SB603 2sb678 2SB647B 2SB646A 2SB646 2SB686
    Text: - 56 - Ta=25‘ C , * E P f i T c = 2 5 eC m £ % 2SB603 B M HV LS SW 2SB605 B M V cB O VcEO (V) (V) ic (D O (A) -500 -500 -0. 5 L F PA -60 -50 -0. 7 LF A -30 -2 5 -1 LF A -60 -5 0 -1 2SB624 fö T B iS LF A -30 -25 2SB631 H # IF PA/MS SW -100 2SB631K H #


    OCR Scan     		PDF 2SB603 2SB605 2SB621 2SB621A 2SB624 2SB631 -0B648 2SD668A O-126) 2SB648A 2SB641 r 2sb641 2SD659 2SD689 2sb678 2SB647B 2SB646A 2SB646 2SB686

    2SB624

    Abstract: 2SD596 marking ll
    Text: NEC Silicon T ran sisto r S ïf/ \ T 7 2SB624 P N P i t f f + S s T J U M S s y □> h # it 9 K w m ' , W V ' J v K IC ffl > L - riftilT - T o o h FE* fÎ 5 ^ 0 hpE : 200 T Y P . V 2 .8 ± 0.2 1.5 = - 1 .0 V , I c = -100 mA) c e O 2SD596 t =i > 7 °'l 9 > 9 'J T t o


    OCR Scan     		PDF 2SD596 2SB624 marking ll