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    RF430CL331HIPWR Texas Instruments Dynamic NFC Interface Transponder for Large File Transfer 14-TSSOP -40 to 85 Visit Texas Instruments Buy
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    Automation Components Inc NSG-HEAT-TRANSFER-PASTE-2-OZ

    NonSilicon Grease, 2 Oz
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    DigiKey NSG-HEAT-TRANSFER-PASTE-2-OZ Ammo Pack 1
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    Automation Components Inc NSG-HEAT-TRANSFER-PASTE-16-OZ

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    Eaton Cutler-Hammer PXDB-APP-TRANSFER (ALTERNATE: PXDB-APP-TRANSFER)

    PX DASHBOARD TRANSFER SCHEME APP | Eaton - Cutler Hammer PXDB-APP-TRANSFER
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    Cotek Electronic Ind Co Ltd TR40---TRANSFER-SWITCH

    Transfer Switch for COTEK SP Series
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    Eaton Cutler-Hammer PXDB-APP-TRANSFER

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    TRANSFER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K2717

    Abstract: transistor k2717
    Text: 2SK2717 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2717 DC−DC Converter and Motor Drive Applications z Low drain−source ON-resistance : RDS (ON) = 2.3 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.4 S (typ.)


    Original     		PDF 2SK2717 K2717 transistor k2717

    2SK41

    Abstract: k4114
    Text: 2SK4114 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK4114 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.2 Ω (typ.) High forward transfer admittance: |Yfs| = 3.5 S (typ.)


    Original     		PDF 2SK4114 2SK41 k4114

    Untitled

    Abstract: No abstract text available
    Text: TK6B60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK6B60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.)


    Original     		PDF TK6B60D

    Untitled

    Abstract: No abstract text available
    Text: TK15H50C TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VI TK15H50C ○ Switching Regulator Applications • Unit: mm Low drain−source ON resistance : RDS (ON) = 0. 33 Ω (typ.) : |Yfs| = 8.5 S (typ.) • High forward transfer admittance


    Original     		PDF TK15H50C

    IC tc4013bp

    Abstract: TC4013BP
    Text: TC4013BP/BF TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC4013BP,TC4013BF TC4013B Dual D-Type Flip Flop TC4013B contains two independent circuits of D type flip-flop. The input level applied to DATA input are transferred to Q and Q output by rising edge of the clock pulse. When SET input is


    Original     		PDF TC4013BP/BF TC4013BP TC4013BF TC4013B TC4013BP DIP14-P-300-2 OP14-P-300-1 IC tc4013bp

    k4a60db

    Abstract: K4A60 K4A60D
    Text: TK4A60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK4A60DB Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON-resistance: RDS (ON) = 1.6 Ω(typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600V)


    Original     		PDF TK4A60DB k4a60db K4A60 K4A60D

    k14a55

    Abstract: K14A55D TK14A55D transistor K14A55D
    Text: TK14A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK14A55D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.5 S (typ.)


    Original     		PDF TK14A55D k14a55 K14A55D TK14A55D transistor K14A55D

    2SK4105

    Abstract: K4105 2SK41 K-410
    Text: 2SK4105 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK4105 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.)


    Original     		PDF 2SK4105 SC-67 2-10R1B 2SK4105 K4105 2SK41 K-410

    SMJ9914

    Abstract: No abstract text available
    Text: SMJ9914A GRIB CONTROLLER JU N E 1 9 8 6 - R E V ISE D M A R C H 1988 • Handles AH IEEE-488 1975/78 Functions • Compatible with IEEE-488A 1980 Supplement • Maximum Transfer Rate . . . Greater Than 360 Kilobytes/Second • Talker and Listener Function T, TE, L, LE


    OCR Scan     		PDF SMJ9914A IEEE-488 IEEE-488A SN75160/161/162 SMJ9914

    l20pF

    Abstract: No abstract text available
    Text: TOSHIBA 3SK249 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3SK249 Unit in mm TV TUNER, UHF RF AMPLIFIER APPLICATIONS. 2. 1+0. 1 • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance. : Crss = 20fF Typ. • Low Noise Figure.


    OCR Scan     		PDF 3SK249 l20pF

    2SK161

    Abstract: 2SK161GR vI652
    Text: SILICON N CHANNEL JUNCTION TYPE FIELD EFFECT TRANSISTOR 2SK161 U nit in mm FM TU N ER A P P LIC A T IO N S . VH F B A N D A M P LIF IE R A PP LIC A T IO N S . Low Noise Figure • • : NF = 2.5dB Typ. (f= 100MHz) High Forward Transfer Admittance : |Yfs| = 9mS (Typ.)


    OCR Scan     		PDF 2SK161 100MHz) 2SK161 2SK161-0 2SK161-Y 2SK161-GR 2SK161GR vI652

    Untitled

    Abstract: No abstract text available
    Text: 3SK226 SILICON N CH ANNEL DUAL GATE M O S T Y P E FIELD EF F E C T T R A N SIST O R TV TUNER, VHF RF AM PLIFIER APPLICATIONS. FM TUNER APPLICATIONS. U nit in mm +Q2 2.9 - 0.3 • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance : Crss = 0.015pF Typ.


    OCR Scan     		PDF 3SK226 015pF

    2SK2038

    Abstract: Transistor TOSHIBA 2SK
    Text: TOSHIBA 2SK2038 Field Effect Transistor U n it in m m Silicon N Channel MOS Type rc-MOS 11.5 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance • R ds (ON) = 1 (Typ-) • High Forward Transfer Adm ittance - Yfs' = 3.OS (Typ.)


    OCR Scan     		PDF 2SK2038 DRAI11 2SK2038 Transistor TOSHIBA 2SK

    2SK1357

    Abstract: 2Sk1357 transistor
    Text: 2SK1357 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE jt-MOS h -5 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. 1 5.9 MAX. *3.2±0 2 FEATURES: • Low Drain-Source ON Resistance : RDS(0N)=2.5Q (Typ.) •High Forward Transfer Admittance : I Y f s ! = 2. 0S( Typ. )


    OCR Scan     		PDF 2SK1357 300/uA 10jKS 2SK1357 2Sk1357 transistor

    800v nmos

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1365 Field Effect Transistor Unit in mm Silicon N Channel MOS Type n-MOS 11.5 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance - Rds(on ) = 1 (Typ.) • High Forward Transfer Admittance - Yfs' = 4. OS (Typ.)


    OCR Scan     		PDF 2SK1365 800v nmos

    2SK2030

    Abstract: No abstract text available
    Text: T O S H IB A 2SK2030 Field Effect Transistor Unit in mm Silicon N Channel M OS Type ti-MOS IV High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance " r d s (ON) = 0.1 OQ (Typ.) • High Forward Transfer Adm ittance - Yfs = 3 .OS (Typ.)


    OCR Scan     		PDF 2SK2030 2SK2030

    2SJ201

    Abstract: 2SJ20
    Text: TOSHIBA FIELD EFFECT TRANSISTOR 2SJ201 SILICON P CHANNEL MOS TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm 03.3 ±0.2 20.5MAX : Vd s s ^-ZOOV MIN. 16.01 . High Breakdown Voltage . High Forward Transfer Admittance : | Yfs | -5.OS (TYP.) : « o -H o O (D


    OCR Scan     		PDF 2SJ201 2SK1530 Ta-25 2-21F1B -10mA, 2SJ201 2SJ20

    TIL186

    Abstract: No abstract text available
    Text: TILI 86-1, TILI 86-2, TIL186-3, TIL186 4 AC INPUT OPTOCOUPLERS 0 2 9 8 1 , DECEMBER 1 9 8 6 -R E V IS E D JUNE 198 9 • A-C Signal Input • Choice of Four Current Transfer Ratios • Gallium Arsenide Dual-Diode Infrared Sources Coupled to a Silicon NPN Photo-Transistor


    OCR Scan     		PDF TIL186-3, TIL186 E65085 aA186

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 3SK291 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-CHANNEL DUAL GATE MOS TYPE 3SK291 TV TUNER, UHF RF AMPLIFIER APPLICATIONS : • Superior Cross Modulation Performance • Low Reverse Transfer Capacitance : Crss = 0.016pF Typ. • Low Noise Figure


    OCR Scan     		PDF 3SK291 016pF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TPC8001 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI TPC8001 LITHIUM ION BATTERY PORTABLE MACHINES AN D TOOLS INDUSTRIAL APPLICATIONS Unit in mm NOTE BOOK PC Low Drain-Source ON Resistance : Rd S (ON)= 15mfi (Typ.) High Forward Transfer Admittance: |Yfs| = llS (Typ.)


    OCR Scan     		PDF TPC8001 15mfi 10//A 20kfl)

    transistor d 4515

    Abstract: Transistor 4515 2-21F1C GT20D101
    Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT20D101 SILICON N CHANNEL TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage ¿3.3 ¿0.2 20.5MAX : Vc e s =250V MIN. . High Forward Transfer Admittance : | Yfe | =10S (TYP.) . Complementary to GT20D201


    OCR Scan     		PDF GT20D101 GT20D201 2-21F1C transistor d 4515 Transistor 4515 2-21F1C GT20D101

    2SC3136

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR -2SC3136 TV VHF M IX E R A PPLICATIONS. • • U n i t in m m High Conversion Gain : Gce = 23dB Typ. Low Reverse Transfer Capacitance : Cre = 0.4pF (Typ.) M A X IM U M RATIN GS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage


    OCR Scan     		PDF -2SC3136 SC-43 260MHz 2SC3136 SCN-5962AC0-C5) TTA25A200A 2SC3136

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2842 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2842 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm Low Drain-Source ON Resistance • High Forward Transfer Admittance : |Yfs| = 9.0S (Typ.)


    OCR Scan     		PDF 2SK2842 100//A 20kfi)

    T20D201

    Abstract: gt20d201
    Text: TOSHIBA GT20D201 Insulated Gate Bipolar Transistor U nit in m m Silicon P Channel MOS Type High Power Amplifier Application Features • High Breakdown Voltage - VCES = -250V Min • High Forward Transfer Admittance - Yfs' = 10S (Typ.) • Complementary to GT20D101


    OCR Scan     		PDF GT20D201 -250V GT20D101 T20D201 T20D201 gt20d201