Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SJ20 Search Results

    2SJ20 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SJ206-T2-AZ Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    2SJ202-T1-A Renesas Electronics Corporation Pch Mosfet For Switching Visit Renesas Electronics Corporation
    2SJ208-AZ Renesas Electronics Corporation Power MOSFETs for Automotive, POMM, / Visit Renesas Electronics Corporation
    2SJ206-T1-AZ Renesas Electronics Corporation Power MOSFETs for Automotive, POMM, / Visit Renesas Electronics Corporation
    2SJ207-T1-AZ Renesas Electronics Corporation Pch Mosfet For Switching Visit Renesas Electronics Corporation
    SF Impression Pixel

    2SJ20 Price and Stock

    TE Connectivity ROX2SJ200K

    RES 200K OHM 5% 2W AXIAL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ROX2SJ200K Cut Tape 6,482 1
    • 1 $0.36
    • 10 $0.2
    • 100 $0.1176
    • 1000 $0.08368
    • 10000 $0.08368
    Buy Now
    ROX2SJ200K Ammo Pack 5,000 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.07292
    • 10000 $0.0483
    Buy Now
    Avnet Americas ROX2SJ200K Bulk 15 Weeks, 1 Days 12,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now
    Mouser Electronics ROX2SJ200K 12,861
    • 1 $0.34
    • 10 $0.132
    • 100 $0.073
    • 1000 $0.069
    • 10000 $0.051
    Buy Now
    Newark ROX2SJ200K Bulk 12,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.058
    Buy Now
    Avnet Abacus ROX2SJ200K 18 Weeks 12,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now
    Master Electronics ROX2SJ200K
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.0742
    • 10000 $0.0559
    Buy Now

    Panasonic Electronic Components ERG-2SJ202V

    RES 2K OHM 5% 2W AXIAL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ERG-2SJ202V Cut Tape 8 1
    • 1 $0.31
    • 10 $0.31
    • 100 $0.31
    • 1000 $0.31
    • 10000 $0.31
    Buy Now
    ERG-2SJ202V Ammo Pack
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    Rochester Electronics LLC 2SJ207-AZ

    P-CHANNEL SMALL SIGNAL MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SJ207-AZ Bulk 706
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.43
    • 10000 $0.43
    Buy Now

    Panasonic Electronic Components ERG-2SJ203

    RES 20K OHM 5% 2W AXIAL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ERG-2SJ203 Bulk
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    Panasonic Electronic Components ERG-2SJ202

    RES 2K OHM 5% 2W AXIAL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ERG-2SJ202 Bulk
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    2SJ20 Datasheets (113)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SJ20 Unknown FET Data Book Scan PDF
    2SJ20 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SJ20 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SJ200 Toshiba Pch Power MOSFET; ; Package: TO-3P(N); R DS On (max 0.83); I_S (A): (max -10) Original PDF
    2SJ200 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SJ200 Toshiba P-Channel MOSFET Original PDF
    2SJ200 Toshiba Original PDF
    2SJ200 Unknown FET Data Book Scan PDF
    2SJ200 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SJ200 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SJ200 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SJ200 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SJ200 Toshiba TRANS MOSFET P-CH 180V 10A 3(2-16C1B) Scan PDF
    2SJ200 Toshiba Field Effect Transistor Silicon P Channel MOS Type Scan PDF
    2SJ200 Toshiba Silicon P channel field effect transistor for high power amplifier applications Scan PDF
    2SJ200-O Toshiba 2SJ200 - TRANSISTOR 10 A, 180 V, P-CHANNEL, Si, POWER, MOSFET, 2-16C1B, 3 PIN, FET General Purpose Power Original PDF
    2SJ200O Toshiba TRANS MOSFET P-CH 180V 10A 3(2-16C1B) Scan PDF
    2SJ200-Y Toshiba 2SJ200 - TRANSISTOR 10 A, 180 V, P-CHANNEL, Si, POWER, MOSFET, 2-16C1B, 3 PIN, FET General Purpose Power Original PDF
    2SJ200Y Toshiba TRANS MOSFET P-CH 180V 10A 3(2-16C1B) Scan PDF
    2SJ200-Y(F) Toshiba 2SJ200 - MOSFET P-CH 180V 10A TO-3 Original PDF

    2SJ20 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    marking H17

    Abstract: SMD Transistor h17 2SJ209 mosfet vgs 5v vds 100v max6017 smd h17
    Text: MOSFET SMD Type MOS Fied Effect Transistor 2SJ209 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 its high input impedance. 0.55 Not necessary to consider driving current because of +0.1 1.3-0.1 +0.1 2.4-0.1 Directly driven by Ics having a 5V poer supply.


    Original
    2SJ209 OT-23 -10mA marking H17 SMD Transistor h17 2SJ209 mosfet vgs 5v vds 100v max6017 smd h17 PDF

    2SJ201

    Abstract: 2SK1530 toshiba pb includes
    Text: 2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = −200 V z High forward transfer admittance : |Yfs| = 5.0 S typ. z Complementary to 2SK1530 Absolute Maximum Ratings (Ta = 25°C)


    Original
    2SJ201 2SK1530 2-21F1B 2SJ201 2SK1530 toshiba pb includes PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SJ200 東芝電界効果トランジスタ シリコンPチャネルMOS形 2SJ200 ○ 低周波電力増幅用 単位: mm : VDSS = −180V z 高耐圧です。 z 高順方向伝達アドミタンスです。 : |Yfs|= 4.0S 標準 z 2SK1529 とコンプリメンタリになります。


    Original
    2SJ200 2SK1529 PDF

    2SK1529

    Abstract: K1529 2SJ200
    Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 180V z High forward transfer admittance : |Yfs| = 4.0 S typ. z Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C)


    Original
    2SK1529 2SJ200 2SK1529 K1529 2SJ200 PDF

    2SK1529

    Abstract: Toshiba 2SJ
    Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 180V z High forward transfer admittance : |Yfs| = 4.0 S typ. z Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C)


    Original
    2SK1529 2SJ200 2SK1529 Toshiba 2SJ PDF

    Toshiba 2SJ

    Abstract: toshiba marking code transistor 2SK1530 toshiba
    Text: 2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 200V z High forward transfer admittance : |Yfs| = 5.0 S typ. z Complementary to 2SJ201 Absolute Maximum Ratings (Ta = 25°C)


    Original
    2SK1530 2SJ201 Toshiba 2SJ toshiba marking code transistor 2SK1530 toshiba PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 180V High forward transfer admittance : |Yfs| = 4.0 S typ. Complementary to 2SJ200 Maximum Ratings (Tc = 25°C)


    Original
    2SK1529 2SJ200 2-16C1B K1529 PDF

    2SK1529

    Abstract: 2SJ200 K1529 SC-65 toshiba pb includes toshiba 2-16c1b
    Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 Unit: mm High-Power Amplifier Application z High breakdown voltage : VDSS = 180 V z High forward transfer admittance : |Yfs| = 4.0 S typ. z Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C)


    Original
    2SK1529 2SJ200 2SK1529 2SJ200 K1529 SC-65 toshiba pb includes toshiba 2-16c1b PDF

    2sk1530

    Abstract: 2SJ201 Toshiba 2SJ
    Text: 2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High Power Amplifier Application Unit: mm l High breakdown voltage : VDSS = −200 V l High forward transfer admittance : |Yfs| = 5.0 S typ. l Complementary to 2SK1530 Maximum Ratings (Ta = 25°C)


    Original
    2SJ201 2SK1530 2sk1530 2SJ201 Toshiba 2SJ PDF

    2SK1530

    Abstract: 2SJ201 toshiba pb includes
    Text: 2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 Unit: mm High-Power Amplifier Application z High breakdown voltage : VDSS = 200 V z High forward transfer admittance : |Yfs| = 5.0 S typ. z Complementary to 2SJ201 Absolute Maximum Ratings (Ta = 25°C)


    Original
    2SK1530 2SJ201 2SK1530 2SJ201 toshiba pb includes PDF

    2SJ208

    Abstract: No abstract text available
    Text: データ・シート MOS形電界効果トランジスタ MOS Field Effect Transistor 2SJ208 Pチャネル MOS FET スイッチング用 外形図(単位:mm) 2SJ208は,2.5 V駆動タイプのPチャネル縦形MOS FETです。 本MOS FETは低電圧で駆動でき,かつドライブ電流を考慮する必


    Original
    2SJ208 2SJ2082 Cycle50 D18277JJ4V0DS004 TC-7744B D18277JJ4V0DS 2SJ208 PDF

    2SJ201

    Abstract: 2SJ20
    Text: TOSHIBA FIELD EFFECT TRANSISTOR 2SJ201 SILICON P CHANNEL MOS TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm 03.3 ±0.2 20.5MAX : Vd s s ^-ZOOV MIN. 16.01 . High Breakdown Voltage . High Forward Transfer Admittance : | Yfs | -5.OS (TYP.) : « o -H o O (D


    OCR Scan
    2SJ201 2SK1530 Ta-25 2-21F1B -10mA, 2SJ201 2SJ20 PDF

    2SK1118

    Abstract: 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220
    Text: Power MOS FET tc-MOS Application Type No. N-CHANNEL P-CHANNEL 2SJ200 2SJ201 Audio Power Amp. 2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 DC/DC Converter 2SK387 Motor Driver 2SK3B8 2SK572 2SK578 2SK573 2SK447 2SK1641 2SK945 2SK528 2SK529 2SK530 2SK531


    OCR Scan
    2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 2SK387 2SK572 2SK578 2SK1118 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220 PDF

    TRANSISTOR bH-10

    Abstract: marking BH-10 2SJ200 2SK1529 SC-65
    Text: TO S H IB A 2SJ200 TO SHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ200 HIGH POWER AMPLIFIER APPLICATION U nit in mm 1 5 .9 M A X . • High Breakdown Voltage • High Forward Transfer Admittance : |Yfs|= 4 .0 S Typ. • Complementary to 2SK1529


    OCR Scan
    2SJ200 2SK1529 SC-65 2-16C1B TRANSISTOR bH-10 marking BH-10 PDF

    7741B

    Abstract: 2SJ205
    Text: DATA SHEET MO S FIELD EFFECT TRANSISTOR 2SJ205 P-CHANNEL MOS FET FOR SWITCHING The 2SJ205, P-channel vertical type MOS FET, is a switching device PACKAG E DIMENSIONS U n it: mm which can be driven by 3 V power supply. As the MOS FET is driven by lo w voltage and does n o t require con­


    OCR Scan
    2SJ205, 7741B 2SJ205 PDF

    TC-2329A

    Abstract: F16V 2SJ207 IEI-1213 iei-1209
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ207 P-CHAIMNEL MOS FET FOR SWITCHING PACKAGE DIMENSIONS Unit: mm The 2SJ207, P-channel vertical type MOS FET, is a switching device which can be driven by 2.5 V power supply. As the MOS FET is driven by low voltage and does not require con­


    OCR Scan
    2SJ207 2SJ207, TC-2329A F16V 2SJ207 IEI-1213 iei-1209 PDF

    c 2328a

    Abstract: 2SJ206 T500
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ206 P-CHANNEL MOS FET FOR SWITCHING The 2SJ206, P-channel vertical type MOS FET, is a switching device


    OCR Scan
    2SJ206 2SJ206, c 2328a 2SJ206 T500 PDF

    2SK1530

    Abstract: 2SJ201
    Text: TOSHIBA 2SK1530 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 530 HIGH POWER AMPLIFIER APPLICATION • • • Unit in mm High Breakdown Voltage : Vj gg = 200V High Forward Transfer Admittance : |Yfs| = 5.0S Typ.) Complementary to 2SJ201


    OCR Scan
    2SK1530 2SJ201 2SK1530 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC / ELECTRON DEVICE MOS FIELD EFFECT TRANSISTOR 2SJ209 P-CHANNEL MOS FET FOR SW ITCHING The 2SJ209, P-channel vertical type MOS PET, is a switching device PACKAGE D IM E N S IO N S U n it : mm which can be driven directly by the output o f ICs having a 5 V power


    OCR Scan
    2SJ209 2SJ209, b2SJ209 VP15-00 WS60-Q0 PDF

    l1209

    Abstract: No abstract text available
    Text: DATA SHEET NEC / M O S FIELD EFFECT TRANSISTOF 2SJ205 P-CHANNEL MOS FET FOR SW ITCHING PACK AG E D IM E N S IO N S U n it: mm The 2SJ205, P-channel vertical type M OS FE T, is a switching device which can be driven by 3 V power supply. As the MOS FE T is driven by low voltage and does not require con­


    OCR Scan
    2SJ205 2SJ205, VP15-00 WS60-00 l1209 PDF

    R621

    Abstract: No abstract text available
    Text: DATA SHEET NEC / MOS FIELD EFFECT TRANSISTOR _ / 2SJ204 ELÈCTRON DEVICE / P-CHANNEL MOS FET FOR SW ITCHING The 2SJ204, P-channel v ertical ty p e M OS FE T, is a sw itch in g device P A C K A G E D IM E N S IO N S Unit : mm w h ich can be driven d ire c tly by the o u tp u t o f ICs having a 5 V pow er


    OCR Scan
    2SJ204 2SJ204, WS60-0Q R621 PDF

    2SJ209

    Abstract: No abstract text available
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 P-CHANNEL MOS FET FOR SWITCHING PACKAGE DIMENSIONS Unit : mm 2.8 ± 0.2 1.5 The 2SJ209, P-channel vertical type MOS F E T, is a switching device


    OCR Scan
    2SJ209 2SJ209, 2SJ209 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1530 Field Effect Transistor Silicon N Channel MOS Type n-MOS II High Power Amplifier Application Features • High Breakdown Voltage - VDSS = 200V (Min.) • High Forward Transfer Admittance - 'Yfs' = 5.OS (Typ.) • Complementary to 2SJ201 • Enhancement-Mode


    OCR Scan
    2SK1530 2SJ201 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1530 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 530 HIGH POWER AMPLIFIER APPLICATION • • • Unit in mm High Breakdown Voltage : VDgg = 200V High Forward Transfer Admittance : |Yfs| = 5.0S Typ. Complementary to 2SJ201


    OCR Scan
    2SK1530 2SJ201 2SK1530· PDF