Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    K14A55 Search Results

    SF Impression Pixel

    K14A55 Price and Stock

    Toshiba America Electronic Components TK14A55D(STA4,Q,M)

    MOSFET N-CH 550V 14A TO220SIS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TK14A55D(STA4,Q,M) Tube 22 1
    • 1 $4.01
    • 10 $4.01
    • 100 $4.01
    • 1000 $1.41896
    • 10000 $1.4175
    Buy Now
    Mouser Electronics TK14A55D(STA4,Q,M)
    • 1 $3.65
    • 10 $3.52
    • 100 $1.73
    • 1000 $1.41
    • 10000 $1.41
    Get Quote

    Toshiba America Electronic Components TK14A55D(STA4

    Trans MOSFET N-CH 550V 14A 3-Pin(3+Tab) TO-220SIS - Rail/Tube (Alt: TK14A55D(STA4,Q,M))
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas TK14A55D(STA4 Tube 32 Weeks 50
    • 1 -
    • 10 -
    • 100 $1.68966
    • 1000 $1.5309
    • 10000 $1.5309
    Buy Now

    K14A55 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    k14a55

    Abstract: K14A55D TK14A55D transistor K14A55D
    Text: K14A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K14A55D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.5 S (typ.)


    Original
    TK14A55D k14a55 K14A55D TK14A55D transistor K14A55D PDF

    K14A55D

    Abstract: TK14A55D
    Text: K14A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K14A55D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.5 S (typ.)


    Original
    TK14A55D K14A55D TK14A55D PDF

    K14A55D

    Abstract: TK14A55D transistor K14A55D
    Text: K14A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K14A55D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.5 S (typ.)


    Original
    TK14A55D K14A55D TK14A55D transistor K14A55D PDF

    transistor K14A55D

    Abstract: No abstract text available
    Text: K14A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K14A55D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.31 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.5 S (typ.)


    Original
    TK14A55D transistor K14A55D PDF

    K14A55D

    Abstract: TK14A55D transistor K14A55D
    Text: K14A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K14A55D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.5 S (typ.)


    Original
    TK14A55D K14A55D TK14A55D transistor K14A55D PDF

    K14A55D

    Abstract: TK14A55D
    Text: K14A55D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K14A55D ○ スイッチングレギュレータ用 単位: mm z オン抵抗が低い。 : RDS (ON) = 0.31Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.5S (標準)


    Original
    TK14A55D SC-67 2-10U1B 20070701-JA K14A55D TK14A55D PDF