tp 312 transistor
Abstract: transistor BUZ 40 C67078-S3129-A2 buz312
Text: SIPMOS Power Transistor BUZ 312 ● N channel ● Enhancement mode ● Avalanche-rated Type VDS ID RDS on Package 1) Ordering Code BUZ 312 1000 V 6.0 A 1.5 Ω TO-218 AA C67078-S3129-A2 Maximum Ratings Parameter Symbol Continuous drain current, TC = 33 ˚C
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O-218
C67078-S3129-A2
tp 312 transistor
transistor BUZ 40
C67078-S3129-A2
buz312
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C67078-S3129-A2
Abstract: tp 312 transistor
Text: BUZ 312 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 312 1000 V 6A 1.5 Ω TO-218 AA C67078-S3129-A2 Maximum Ratings Parameter Symbol Continuous drain current
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O-218
C67078-S3129-A2
C67078-S3129-A2
tp 312 transistor
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 312 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated i P in i Pin 2 G Type BUZ 312 Vds 1000 V fa 6A ^fasten 1 .5 « Pin 3 D S Package Ordering Code TO-218 AA C67078-S3129-A2 Maximum Ratings Parameter Symbol Continuous drain current
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O-218
C67078-S3129-A2
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Untitled
Abstract: No abstract text available
Text: SIEMENS SIPWIOS Power Transistor • • • N channel Enhancem ent mode Avalanche-rated Type ^DS i A ^DS on) BUZ 312 1000 V I 6.0 A 1.5 n Maxim um Ratings Parameter Continuous drain current, Tc = 33 ‘ C Pulsed drain current, Tc = 25 "C Avalanche current, limited by Ti max
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C67078-S3129-A2
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NPN Transistor 600V
Abstract: 2N5466 2N5468 JAN2N3902 JAN2N5157 SDT401 SDT430
Text: ^Jolitran IF > fö @ lü J T r © A T T M ,® < Devices. Inc. VERY HIGH VOLTAGE, FAST SWITCHING NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CHIP NUMBER FORMERLY 42 dH CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)
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203mm)
toN2N3902,
JAN2N5157,
SDT401,
SDT430,
2N5466,
2N5468
NPN Transistor 600V
2N5466
JAN2N3902
JAN2N5157
SDT401
SDT430
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Untitled
Abstract: No abstract text available
Text: m 2N6678 \ \ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N6678 Power Transistor is Designed for General Purpose Switching and Amplifier Applications. PACKAGE STYLE T O - 3 INCHES 875 MAX. A MAXIMUM RATINGS B 135 MAX. .2 5 0- 043 DIA. C MILLIMETERS 22.23 MAX.
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2N6678
2N6678
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Untitled
Abstract: No abstract text available
Text: m 2N6677 \ \ SILICO N NPN PO W ER T R A N SIST O R DESCRIPTION: The 2N6677 Power Transistor is Designed for General Purpose Switching and Amplifier Applications. P A C K A G E STYLE T O - 3 MAXIMUM RATING S lc 15 A Ib 5.0 A ce 400 V P d is s 175 W @ Tc = 25 °C
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2N6677
2N6677
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change resistor when high current power system
Abstract: servo motor controller diagram transistor crossover Motor current sense servo motors pari EL2137CS motor drive 4 pin transistor smd ab l2137
Text: EL2137C ELANTEC INC 41E D EL2137C IEL A ! 2 A, Small, Precision Servo Motor Driver HIGH PERFORMANCE ANALOG INTEGRATED CIRCUtTS F e a tu r e s G e n e ra l D e sc r ip tio n • 34 mA m inim um base drive to H bridge pow er transistors • 2 A m otor cu rren t tran sisto r
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EL2137C
EL2137CS
MDP0027
16-Pin
EL2137C
EL2137
change resistor when high current power system
servo motor controller diagram
transistor crossover
Motor current sense
servo motors
pari
motor drive 4 pin
transistor smd ab
l2137
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Untitled
Abstract: No abstract text available
Text: i_L N AUER PHILIPS/BISCRETE DbE D • bbS3T31 QOlSlb? 1 RV2833B5X r - 3 3 - D MICROWAVE POWER POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power amplifier, operating in the 2.8 to 3.3 GHz frequency range.
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bbS3T31
RV2833B5X
53T31
0D1S17D
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Untitled
Abstract: No abstract text available
Text: NTE385 Silicon NPN Transistor Audio Power Amp, Switch Description: The NTE385 is a silicon NPN transistor in a TO3 type package designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated
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NTE385
NTE385
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TRANSISTOR 318
Abstract: BSP 312 BSP318 MU diode MARKING CODE
Text: SIEMENS BSP 318 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated • V GS th = 1.2 .2.0 V Type BSP 318 VÒS 60 V b 2.6 A Type BSP 318 Ordering Code Q67000-S127 ffDS(on) 0.15 £2 Package Marking SOT-223
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OT-223
Q67000-S127
E6327
OT-223
TRANSISTOR 318
BSP 312
BSP318
MU diode MARKING CODE
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2N6561
Abstract: 2N6563 BUW73
Text: -Ætttron Devices. Inc. HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER NPN EPITAXIAL PLANAR POWER TRANSISTOR FORMERLY 12 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available) Also available on:
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40nun
52tnm)
305mm)
2N6561
2N6563
BUW73
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TRANSISTOR SMD 9bb
Abstract: TI 42A
Text: In te rn a tio n a l TOR Rectifier PD - 9.1627 IRG4ZH70UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Surface Mountable UltraFast CoPack IGBT • UltraFast IGBT optimized for high switching frequencies • IGBT co-packaged with HEXFRED ultrafast,
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IRG4ZH70UD
SMD-10
TRANSISTOR SMD 9bb
TI 42A
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marking 3t1
Abstract: marking S3 amplifier RV2833B5X
Text: [ I N AMER P H I L I P S / D I S C R E T E DbE D • btS3131 00151b? 1 I RV2833B5X r-3 3 -n MICROWAVE POWER POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power amplifier, operating in the 2.8 to 3.3 GHz frequency range.
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RV2833B5X
T-33-N
bS3131
RV2833B5X
Q01S17D
marking 3t1
marking S3 amplifier
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NPN Transistor 1500V
Abstract: NTE165
Text: NTE165 Silicon NPN Transistor TV Horizontal Output Description: The NTE165 is a silicon NPN transistor in a TO3 type package designed for use in color TV horizontal output applications. Features: D High Voltage D High Power D High Switching Speed D Good Stability
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NTE165
NTE165
100mA,
NPN Transistor 1500V
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MSD060
Abstract: BUK7213-40A
Text: BUK7213-40A TrenchMOS standard level FET Rev. 01 — 29 January 2004 Product data M3D300 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips General-Purpose Automotive TrenchMOS™ technology.
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BUK7213-40A
M3D300
OT428
MSD060
BUK7213-40A
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transistor npn
Abstract: 2SD1768S transistor 313 2SD1768 Transistor 2SD1768S
Text: 2SD1768S Transistor, NPN Features Dimensions Units : mm available in SP T (SC -72) package 2SD1768S (SPT) high co llector-to-em itter voltage: V c e o = 80 V large collector current: lc = l A continuous (dc) m good hFE linearity low co lle ctor saturation voltage
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2SD1768S
2SD1768S
transistor npn
transistor 313
2SD1768
Transistor 2SD1768S
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Untitled
Abstract: No abstract text available
Text: EL7240C/EL7241C ¿ la n fr n r EL7240C/EL7241C • ■ M KPA’ EOCIRCJITS i HIGHmtf-GRMANCEANALOG«N’ 1H1 iI ff fl iht , kS JnJ p / Wp Ud l / UV iI /I/ AD / *r fi Cv / eC rf sa F eatu res G eneral D escription • • • • • • • The EL7240C/EL7241C high speed coil drivers accept logic in
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EL7240C/EL7241C
EL7240C/EL7241C
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NTE283
Abstract: npn 10a 800v
Text: NTE283 Silicon NPN Transistor Horizontal Output, Switch Description: The NTE283 is a silicon NPN transistor in a TO3 type package designed for high–voltage, high– speed, power switching in inductive circuits where fall time is critical. Typical applications include
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NTE283
NTE283
npn 10a 800v
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Untitled
Abstract: No abstract text available
Text: BUK761R8-30C N-channel TrenchMOS standard level FET Rev. 01 — 25 July 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package, using Philips Ultra High-Performance (UHP) automotive TrenchMOS technology.
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BUK761R8-30C
BUK761R8-30C
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BUZ54
Abstract: BUZ54A Diode D 54 3tf* siemens 235L C160 TC-130-W C67078-S1010-A3 DIODE BUZ 300
Text: SIEM ENS SIPMOS Power Transistors BUZ54 • N channel • Enhancement mode • Avalanche-rated VMT05152 Type VDS Id •^DS on Package 1> O rdering Code BUZ 54 1000 V 5.1 A 2 .0 £2 T O -2 0 4 A A C 6 7 0 7 8 -S 1 0 1 0 -A 2 BUZ 54 A 1000 V 4 .5 A 2 .6 n
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vmt05152
O-204
C67078-S1010-A2
C67078-S1010-A3
54/BUZ
235bD5
023SbDS
00b7flTM
BUZ54
BUZ54A
Diode D 54
3tf* siemens
235L
C160
TC-130-W
C67078-S1010-A3
DIODE BUZ 300
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Untitled
Abstract: No abstract text available
Text: SIEMENS BSP 318 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated • W = 1'2 - 2-0 V Type BSP 318 Vbs 60 V Type BSP 318 Ordering Code Q67000-S127 b 2.6 A ñ DS on) 0.15 Ci Package Marking SOT-223 BSP 318
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Q67000-S127
OT-223
E6327
fi23SbQS
a23SbQS
fl235b05
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Untitled
Abstract: No abstract text available
Text: HIGH PERFORMANCE ANALOG INTEGRATED CIRCUITS EL2001C Low Power, 70 MHz Buffer Amplifier Features General Description • 1.3 mA supply current • 7 0 M Hz bandw idth • 2000 V/f-ts slew rate • Low bias current, 1 jiA typical •1 0 0 mA output current • Short circuit protected
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EL2001C
EL2001
QQ0431b
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constant time delay
Abstract: metal detector plans schematic el2019h/883b M2019 metal detector diagram PI rs flip flop T-75 A HIGH VOLTAGE DIODES EL2019CH EL2019CJ EL2019CN
Text: Sñ E D ^B m K 0 W 0 HifiH PERFORMANCE ANALOSINTEGRATHD CIRCUITS t>72 • E L A EL2019/EL2019C Fast, High Voltage Comparator with Master Slave Flip-Flop ELANTEC INC Sl> G eneral D escrip tion The EL2019 offers a new feature previously unavailable in a comparator before—a m aster/slave edge triggered flip-flop. The
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312t557
EL2019/EL2019C
31e15s7
0d02531
EL2019
constant time delay
metal detector plans schematic
el2019h/883b
M2019
metal detector diagram PI
rs flip flop
T-75 A HIGH VOLTAGE DIODES
EL2019CH
EL2019CJ
EL2019CN
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