BUK9212-55B
Abstract: No abstract text available
Text: BUK9212-55B TrenchMOS logic level FET Rev. 02 — 12 December 2003 M3D300 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.
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BUK9212-55B
M3D300
OT428
BUK9212-55B
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BUK7212-55B
Abstract: No abstract text available
Text: BUK7212-55B TrenchMOS standard level FET Rev. 01 — 23 January 2004 M3D300 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.
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BUK7212-55B
M3D300
OT428
BUK7212-55B
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BUK7225-55A
Abstract: No abstract text available
Text: BUK7225-55A TrenchMOS standard level FET Rev. 01 — 17 April 2001 Product specification M3D300 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.
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BUK7225-55A
M3D300
BUK7225-55A
OT428
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03nc60
Abstract: BUK7222-55A
Text: BUK7222-55A TrenchMOS standard level FET Rev. 01 — 17 April 2001 Product specification M3D300 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.
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BUK7222-55A
M3D300
BUK7222-55A
OT428
03nc60
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IRFR220
Abstract: No abstract text available
Text: IRFR220 N-channel enhancement mode field effect transistor Rev. 01 — 14 August 2001 Product data M3D300 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: IRFR220 in SOT428 D-PAK .
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IRFR220
M3D300
IRFR220
OT428
MBK091
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BUK7213-75B
Abstract: No abstract text available
Text: BUK7213-75B TrenchMOS standard level FET Rev. 01 — 10 December 2002 M3D300 Objective data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology, featuring very
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BUK7213-75B
M3D300
BUK7213-75B
OT428
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12232
Abstract: BUK7227-100B
Text: BUK7227-100B TrenchMOS standard level FET Rev. 01 — 26 January 2004 M3D300 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.
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BUK7227-100B
M3D300
OT428
12232
BUK7227-100B
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10804
Abstract: No abstract text available
Text: BUK9207-30B TrenchMOS logic level FET Rev. 01 — 12 December 2002 M3D300 Objective data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology, featuring very
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BUK9207-30B
M3D300
BUK9207-30B
OT428
10804
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255L1
Abstract: No abstract text available
Text: BUK9209-40B TrenchMOS logic level FET Rev. 01 — 13 December 2002 M3D300 Objective data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology, featuring very
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BUK9209-40B
M3D300
BUK9209-40B
OT428
255L1
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Untitled
Abstract: No abstract text available
Text: BUK9212-55B TrenchMOS logic level FET Rev. 01 — 20 December 2002 M3D300 Objective data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology, featuring very
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BUK9212-55B
M3D300
BUK9212-55B
OT428
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BUK72150-55A
Abstract: No abstract text available
Text: BUK72150-55A TrenchMOS standard level FET Rev. 02 — 20 November 2003 Product data M3D300 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips General-Purpose Automotive GPA TrenchMOS™ technology.
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BUK72150-55A
M3D300
OT428
BUK72150-55A
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Untitled
Abstract: No abstract text available
Text: BUK7277-55A TrenchMOS standard level FET Rev. 01 — 1 February 2001 Product specification M3D300 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.
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BUK7277-55A
M3D300
BUK7277-55A
OT428
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Untitled
Abstract: No abstract text available
Text: BUK9222-55A TrenchMOS logic level FET Rev. 01 — 17 April 2001 Product specification M3D300 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.
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BUK9222-55A
M3D300
BUK9222-55A
OT428
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PHD83N03LT
Abstract: PHD83
Text: PHD83N03LT N-channel enhancement mode field-effect transistor Rev. 01 — 16 July 2001 Product data M3D300 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability: PHD83N03LT in a SOT428 D-PAK .
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PHD83N03LT
M3D300
PHD83N03LT
OT428
OT428,
MBB076
MBK091
PHD83
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Untitled
Abstract: No abstract text available
Text: BUK9277-55A TrenchMOS logic level FET Rev. 01 — 6 February 2001 Product specification M3D300 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.
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BUK9277-55A
M3D300
BUK9277-55A
OT428
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transistor BR 471 A
Abstract: PHD95N03LT 08216
Text: PHD95N03LT N-channel enhancement mode field-effect transistor Rev. 01 — 18 July 2001 Product data M3D300 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability: PHD95N03LT in SOT428 D-PAK .
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PHD95N03LT
M3D300
PHD95N03LT
OT428
OT428,
MBB076
MBK091
transistor BR 471 A
08216
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OF TRANSISTOR AT 30B
Abstract: BUK7207-30B 03nk80
Text: BUK7207-30B TrenchMOS standard level FET Rev. 02 — 22 January 2004 M3D300 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.
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BUK7207-30B
M3D300
OT428
OF TRANSISTOR AT 30B
BUK7207-30B
03nk80
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BUK7211-55B
Abstract: 03nl03 03nl06
Text: BUK7211-55B TrenchMOS standard level FET Rev. 01 — 12 December 2002 M3D300 Objective data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology, featuring very
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BUK7211-55B
M3D300
BUK7211-55B
OT428
03nl03
03nl06
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BUK7226-100B
Abstract: buk7226-100
Text: BUK7226-100B TrenchMOS standard level FET Rev. 01 — 10 December 2002 M3D300 Objective data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology, featuring very
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BUK7226-100B
M3D300
BUK7226-100B
OT428
buk7226-100
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Untitled
Abstract: No abstract text available
Text: BUK9237-55A TrenchMOS logic level FET Rev. 02 — 14 February 2002 M3D300 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance. Product availability:
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BUK9237-55A
M3D300
BUK9237-55A
OT428
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Untitled
Abstract: No abstract text available
Text: BUK7208-40B TrenchMOS standard level FET Rev. 01 — 12 December 2002 M3D300 Objective data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology, featuring very
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BUK7208-40B
M3D300
BUK7208-40B
OT428
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BUK7214-75B
Abstract: No abstract text available
Text: BUK7214-75B TrenchMOS standard level FET Rev. 01 — 26 January 2004 M3D300 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.
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BUK7214-75B
M3D300
OT428
BUK7214-75B
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MSD060
Abstract: BUK7213-40A
Text: BUK7213-40A TrenchMOS standard level FET Rev. 01 — 29 January 2004 Product data M3D300 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips General-Purpose Automotive TrenchMOS™ technology.
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BUK7213-40A
M3D300
OT428
MSD060
BUK7213-40A
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transistor K 2333
Abstract: No abstract text available
Text: BUK9225-55A TrenchMOS logic level FET Rev. 01 — 17 April 2001 Product specification M3D300 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.
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BUK9225-55A
M3D300
BUK9225-55A
OT428
transistor K 2333
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