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    TOSHIBA 2SC3074 Search Results

    TOSHIBA 2SC3074 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA 2SC3074 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1941 amp circuit

    Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
    Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


    Original     		PDF BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		PDF SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126

    2sc5088 horizontal transistors

    Abstract: equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a
    Text: 2003-8 BCE0016A PRODUCT GUIDE Power Transistors 2003 http://www.semicon.toshiba.co.jp/eng Toshiba Power Transistors Selection Guide by Function and Application Thank you for purchasing Toshiba semiconductor products. As you may already know, semiconductor products are used in a wide range of fields, both domestic and industrial.


    Original     		PDF BCE0016A 3501C-0109 F-93561, 2sc5088 horizontal transistors equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a

    c3074

    Abstract: No abstract text available
    Text: 2SC3074 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3074 High Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 µs (typ) • Complementary to 2SA1244


    Original     		PDF 2SC3074 2SA1244 c3074

    c3074

    Abstract: 2SA1244 2SC3074
    Text: 2SC3074 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3074 High Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 s (typ.) • Complementary to 2SA1244


    Original     		PDF 2SC3074 2SA1244 c3074 2SA1244 2SC3074

    c3074

    Abstract: Equivalent 2SC3074 2SA1244 2SC3074
    Text: 2SC3074 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3074 High Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 s (typ) • Complementary to 2SA1244


    Original     		PDF 2SC3074 2SA1244 c3074 Equivalent 2SC3074 2SA1244 2SC3074

    Untitled

    Abstract: No abstract text available
    Text: 2SC3074 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3074 High Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 µs (typ) • Complementary to 2SA1244


    Original     		PDF 2SC3074 2SA1244

    c3074

    Abstract: C3074 y 2SA1244 2SC3074
    Text: 2SC3074 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3074 High Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 s (typ) • Complementary to 2SA1244


    Original     		PDF 2SC3074 2SA1244 c3074 C3074 y 2SA1244 2SC3074

    2SA1244

    Abstract: 2SC3074
    Text: TOSHIBA 2SC3074 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3074 HIGH CURRENT SWITCHING APPLICATIONS. • Low Collector Saturation Voltage : VCE (sat) = °-4V (Max.) (at Ie = 3A) High Speed Switching Time : ts^g^l.O/^s (Typ.) Complementary to 2SA1244


    OCR Scan     		PDF 2SC3074 2SA1244 95MAX 2SA1244 2SC3074

    2SC3074

    Abstract: No abstract text available
    Text: TOSHIBA 2SC3074 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SCB074 Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. • Low Collector Saturation Voltage VCE = 0-4V (Max.) (at IC = 3A) High Speed Switching Time : tstg = 1 .0/ j s (Typ.) Complementary to 2SA1244


    OCR Scan     		PDF 2SC3074 2SCB074 2SA1244 95MAX 2SC3074

    2SA1244

    Abstract: 2SC3074
    Text: TOSHIBA 2SC3074 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3074 Unit in mm HIGH CURRENT SWITCHING APPLICATIONS • Low Collector Saturation Voltage : VCE (sat) - °-4 v (Max.) (at l£ = 3 A) • High Speed Switching Time : tstg = 1.0 /us (Typ.)


    OCR Scan     		PDF 2SC3074 2SA1244 2SA1244 2SC3074

    toshiba 3074

    Abstract: 2SC3074 2SA1244
    Text: TOSHIBA 2SC3074 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3074 Unit in mm HIGH CURRENT SWITCHING APPLICATIONS • Low Collector Saturation Voltage : VCE (sat) - °-4 v (Max.) (at l£ = 3 A) • High Speed Switching Time : tstg = 1.0 /us (Typ.)


    OCR Scan     		PDF 2SC3074 2SA1244 toshiba 3074 2SC3074 2SA1244

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC3074 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3074 HIGH CURRENT SWITCHING APPLICATIONS • Unit in nun Low Collector Saturation Voltage : VCE (sat) = 0-4 V (Max.) (at IC = 3 A) • High Speed Switching Time : tstg = 1.0 jus (Typ.)


    OCR Scan     		PDF 2SC3074 2SA1244

    2015A

    Abstract: No abstract text available
    Text: TOSHIBA 2SC3074 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3074 Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. • • • Low Collector Saturation Voltage : V cE(sat)=°-4V (Max.) (at Ie=3A ) High Speed Switching Time : tstg=1.0^s (Typ.)


    OCR Scan     		PDF 2SC3074 2SA1244 50X50X0 2015A

    2SA1244

    Abstract: No abstract text available
    Text: TOSHIBA TRANSISTOR SEMICONDUCTOR TOSHIBA TECHNICAL DATA 2 S A 1 244 SILICON PNP EPITAXIAL TYPE PCT PROCESS (2SA1244) HIGH CURRENT SWITCHING APPLICATIONS. • • • Low Collector Saturation Voltage : v CE(sat)= - ° - 4V (Max.) at Iq = -3 A High Speed Switching Time : tstg = 1.0/^s (Typ.)


    OCR Scan     		PDF 2SA1244) 2SA1244 2SC3074 50X50X0 2SA1244-4* 2SA1244

    Untitled

    Abstract: No abstract text available
    Text: 2SA1244 TOSHIBA 2 S A 1 244 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SWITCHING APPLICATIONS. • Unit in mm Low Collector Saturation Voltage : v CE(sat) = -0 .4 V (Max.) at I c = - 3 A High Speed Switching Time : tstg = 1 .0/ j s (Typ.)


    OCR Scan     		PDF 2SA1244 2SC3074

    Untitled

    Abstract: No abstract text available
    Text: 2SA1244 TOSHIBA 2 S A 1 244 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SWITCHING APPLICATIONS • • • U nit in mm Low Collector Saturation Voltage : v CE(sat) = -0 .4 V (Max.) at Iq = - 3 A High Speed Switching Time : tstg = 1.0 jus (Typ.)


    OCR Scan     		PDF 2SA1244 2SC3074

    2SA1244

    Abstract: A1244 2SC3074
    Text: 2SA1244 TOSHIBA 2 S A 1 244 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS • Low Collector Saturation Voltage : v CE(sat) = -0 .4 V (Max.) at I q = - 3 A • High Speed Switching Time : tstg = 1.0 /us (Typ.)


    OCR Scan     		PDF 2SA1244 2SC3074 961001EAA2 2SA1244 A1244 2SC3074

    2SA1244

    Abstract: a1244 2SC3074 SA1244
    Text: 2SA1244 TOSHIBA 2 S A 1 244 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS • Low Collector Saturation Voltage : v CE(sat) = -0 .4 V (Max.) at I q = - 3 A • High Speed Switching Time : tstg = 1.0 /us (Typ.)


    OCR Scan     		PDF 2SA1244 2SC3074 961001EAA1 2SA1244 a1244 2SC3074 SA1244

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1244 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS H A 1 mm m m m 1 A4 • ■ Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. • Low Collector Saturation Voltage * v CE(sat) = -0 .4 V (Max.) at I c = - 3 A • High Speed Switching Time :


    OCR Scan     		PDF 2SA1244 2SC3074

    20A-8

    Abstract: No abstract text available
    Text: TOSHIBA 2SC3074 Transistor Silicon NPN Epitaxial Type PCT Process High Current Switching Applications Features • Low Collector Saturation Voltage - VCE (sat, = 0.4 V (Max.) (at lc = 3A) • High Speed Switching Time - tgtg = 1.0ns (Typ.) • Complementary to 2SA1244


    OCR Scan     		PDF 2SC3074 2SA1244 50x50xa8nun 20A-8

    2sc3074

    Abstract: No abstract text available
    Text: TO SH IBA 2SC3074 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3074 HIGH CURRENT SWITCHING APPLICATIONS • • • Low Collector Saturation Voltage : VCE (saf) = 0.4 V (Max.) (at In = 3 A) High Speed Switching Time : tstg = 1.0 /us (Typ.)


    OCR Scan     		PDF 2SC3074 2SA1244 2sc3074

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TRANSISTOR 2SC3074 SILICON NPN EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SWITCHING APPLICATIONS. Unit in mm FEATURES: . Low Collector Saturation Voltage : VcE(sat)=0.4V(Max.) a (at Ic=3A) . High Speed Switching Time : tstg=l-0^s(Typ.) . Complementary to 2SA1244


    OCR Scan     		PDF 2SC3074 2SA1244 Collector80

    2SA1244

    Abstract: 2SC3074 toshiba 2sc3074
    Text: TO SH IBA 2SC3074 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3074 HIGH CURRENT SWITCHING APPLICATIONS • • • Low Collector Saturation Voltage : VCE (saf) = 0.4 V (Max.) (at In = 3 A) High Speed Switching Time : tstg = 1.0 /us (Typ.)


    OCR Scan     		PDF 2SC3074 2SA1244 2SA1244 2SC3074 toshiba 2sc3074