3202 a ic
Abstract: C5LT2
Text: S-812C Series HIGH OPERATING VOLTAGE CMOS VOLTAGE REGULATOR www.sii-ic.com Rev.6.1_00 Seiko Instruments Inc., 2001-2011 The S-812C Series is a high-withstand voltage regulator IC which is developed by using the CMOS technology. This IC is suitable for applications which require withstand because its maximum voltage for operation is as high
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S-812C
3202 a ic
C5LT2
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3VD156600YL
Abstract: 1N60SS
Text: 3VD156600YL 3VD156600YL 高压MOSFET芯片 描述 ¾ 3VD156600YL为采用硅外延工艺制造的N沟道增强 型600V高压MOS功率场效应晶体管； ¾ 先进的高压分压终止环结构； 1 ¾ 较高的雪崩能量； 3 ¾ 漏源二极管恢复时间快；
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3VD156600YL
3VD156600YL
3VD156600YLN
600VMOS
O-92DT-3L
1N60SS
250uA
250uAVDS
30VVDS
600VVGS
1N60SS
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induction cooker fault finding diagrams
Abstract: enamelled copper wire swg table AC digital voltmeter using 7107 wiring diagram IEC320 C14 Inlet Male Power Socket Fuse Switch db 3202 diac siemens mkl capacitor YY63T varta CR123A HXD BUZZER lt700 transformer
Text: 03front order p1_3 1/29/02 3:01 PM C3 Page 1 components cables & connectors actives 18 57 semiconductors optoelectronics passives contents 72 81 87 91 capacitors resistors transformers, ferrites & inductors emc, filters & suppression electromechanical 92 120
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03front
induction cooker fault finding diagrams
enamelled copper wire swg table
AC digital voltmeter using 7107
wiring diagram IEC320 C14 Inlet Male Power Socket Fuse Switch
db 3202 diac
siemens mkl capacitor
YY63T
varta CR123A
HXD BUZZER
lt700 transformer
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Untitled
Abstract: No abstract text available
Text: S-808xxC Series www.sii-ic.com SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR Rev.6.1_00 Seiko Instruments Inc., 2001-2011 The S-808xxC series is a series of high-precision voltage detectors developed using CMOS process. The detection voltage is fixed internally with an accuracy of ±2.0%. Two output forms, Nch open-drain and CMOS
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S-808xxC
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Untitled
Abstract: No abstract text available
Text: 3VD156600YL 3VD156600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD156600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. ¾ Advanced termination scheme to provide enhanced voltage-blocking capability.
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3VD156600YL
3VD156600YL
O-92DT-3L
1N60SS.
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Untitled
Abstract: No abstract text available
Text: S-808xxC Series www.sii-ic.com SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR Rev.6.1_00 Seiko Instruments Inc., 2001-2011 The S-808xxC series is a series of high-precision voltage detectors developed using CMOS process. The detection voltage is fixed internally with an accuracy of ±2.0%. Two output forms, Nch open-drain and CMOS
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sfh817a
Abstract: 1n4007 sod123 D217 OPTO NCP1397 RECTIFIER DIODE D100 diode zd201 opto d206 NCP1252 zener diode 1206 6v8 schematic diagram lcd tv sharp inverter
Text: TND401/D Rev. 2, September 2010 300 W High Performance SLIM LCD TV Power Solution Jean-Paul Louvel LCD TV System Applications 2010 ON Semiconductor Disclaimer: ON Semiconductor is providing this reference design documentation package “AS IS” and the recipient assumes all risk associated
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TND401/D
680uH
EFD30
NCP1052P44G
TP207ST
PH9080NL
sfh817a
1n4007 sod123
D217 OPTO
NCP1397
RECTIFIER DIODE D100
diode zd201
opto d206
NCP1252
zener diode 1206 6v8
schematic diagram lcd tv sharp inverter
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to92c
Abstract: MPSA 506 transistor transistor bf 422 NPN smpsa42 bc 617 transistor equivalent to92d BC368N BF 414 BB 112 BC338N
Text: Selection Guide For complete information and data sheets please contact us on our internet homepage Leaded Components Varactor Diodes leaded Type Characteristics (TA = 25 °C) Maximum Ratings VR IF CT
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de/semiconductor/products/35/35
O-92a
O-92b
O-92d
to92c
MPSA 506 transistor
transistor bf 422 NPN
smpsa42
bc 617 transistor equivalent
to92d
BC368N
BF 414
BB 112
BC338N
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BZX85C12V
Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
Text: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes
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DO-15
DO-201AD
O-220AC
T0202-3
STGP3NB60HD*
STGP7NB60HD*
STGP3NB60HD
STGP7NB60HD
BZX85C12V
TOSHIBA 2N3055
bta41-600b application
BTA41-600B firing circuit
TAB 429 H toshiba
BZX85C20V
SCR tyn612 pin configuration
picaxe
TYN612 specification
2SA1085E
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transistors BC 639 029
Abstract: BC368N mpsa 46 MPSA 506 transistor 42BA-3 SBC337
Text: Selection Guide Diodes leaded For complete information and data sheets please refer to our Data Book I and II, Small Signal Semiconductor Edition 03.92. RF-Schottky Diodes for Professional Applications Type Frequency Band GHz Maximum Ratings Characteristics (TA = 25 °C)
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O-92d
transistors BC 639 029
BC368N
mpsa 46
MPSA 506 transistor
42BA-3
SBC337
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817b 4 pin ic
Abstract: ic 817b S-817B40AMC-CXD S-817B18AMC-CWHT2x
Text: S-817 Series SUPER-SMALL PACKAGE CMOS VOLTAGE REGULATOR www.sii-ic.com Rev.6.1_00 Seiko Instruments Inc., 1999-2011 The S-817 Series is a 3-terminal positive voltage regulator, developed using CMOS technology. Small ceramic capacitors can be used as the output capacitor, and the S-817 series provides stable operation with low loads
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S-817
817b 4 pin ic
ic 817b
S-817B40AMC-CXD
S-817B18AMC-CWHT2x
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2907A PNP bipolar transistors
Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846
Text: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
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O-92d
2907A PNP bipolar transistors
BC 148 TRANSISTOR DATASHEET
TRANSISTOR BC 450 pnp
diode S6 78A
transistors bf 517
BFG sot89
BC 327 SOT 23
BAS20 SOT23
DIODE TA 70/04
bcp 846
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BFQ58
Abstract: BFQ57 BFT99 RF Bipolar Transistors BFT97 BFP194 BF840 BFT65 BFR34A BF450
Text: Microwave, RF & Tuner Transistors For complete package outlines, refer to pages PO-1 through PO-6 RF Bipolar Transistors N=NPN P=PNP BF199 BF240 BF241 BF254 BF255 BF414 BF450 BF451 BF506 BF606A BF763 BF959 BF970 BFQ57 BFQ58 BFQ69 BFQ70 BFQ71 BFQ72 BFQ73 BFQ73S
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6535b05
00M5Mgfl
BF199
O-92d
BF599
BF240
BF840
BF241
BFQ58
BFQ57
BFT99
RF Bipolar Transistors
BFT97
BFP194
BF840
BFT65
BFR34A
BF450
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2N5248
Abstract: BC264C 2N5557 2N5103 2N5485 2n5556 BF244A BF245C 2N5104 BC264A
Text: N -Channel Junction Field Effect Transistors GENERAL PURPOSE M A X IM U M R A T IN G S ' dss Im A l TYPE VG S off (V Y fs (mm hos) Ciss Crss NF (pF) (pF) (dB) max max max CASE NO. Pd (mW) b v gss (V) m in BC264A BC264E! BC264C BC264D TO-92DE TO-92DE TO-92DE
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BC264A
O-92DE
BC264E!
BC264C
BC264D
BF246A
O-92DA
2N5248
2N5557
2N5103
2N5485
2n5556
BF244A
BF245C
2N5104
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diode S6 78A
Abstract: TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor
Text: SIEM EN S Selection Guide RF-Transistors and MMICs MOS Field-Effect Dual-Gate GaAs FETs. 14
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O-92tl
O-92d
diode S6 78A
TRANSISTOR PNP BA RT SOT 89
mmic CEA SOT363
32N45
transistor 6bw
TRANSISTOR BC 545
BF1012S
6bw sot-23
up 6103 s8
6bw 12 transistor
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to92c
Abstract: No abstract text available
Text: Transistors For complete package outlines, refer to pages PO-1 through PO-6 High Voltage Transistors Typ e M axim um Ratings N=NPN P=PNP BF420 BF421 BF422 BF423 BFP22 BFP23 BFP25 BFP26 N P N P N P N P V CEO V 'c m.\ Pt mW 300 300 250 250 200 200 300 300 50
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BF420
BF421
BF422
BF423
BFP22
BFP23
BFP25
BFP26
O-92d
to92c
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2n3819
Abstract: bf245b
Text: N - Channel Junction Field Effect Transistors GENERAL PURPOSE TYPE NO. CASE MAXIMUM RATINGS BV css P4 mW (V) loss (mA) min max Y* (nimbos) min max Vcsf««) (V) min max Cte (pF) max (pF) max Cr„ NF (dB) max 8 8 8 8 14.5 4+ 4+ 4+ 4+ 11+ 1.2+ 1.2+ 1.2+ 1.2+
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BC264A
BC264B
BC264C
BC264D
BF246A
BF246B
BF246C
BF247A
BF247B
BF247C
2n3819
bf245b
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Untitled
Abstract: No abstract text available
Text: N - Channel Junction Field Effect Transistors SWITCHING/CHOPPING MAXIMUM RATINGS TYPE NO. Pd VGS ofl (mA) (V) BVGSS (mW) (V) min max rds(on) Ciss Crss ton toff (ohms) (PF) (PF) (bs) (ns) min IMI m ar max max max IMI 3 0.5 0.5 4 10 5 3 10 6 30 50 100 100 220
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2N3966
O-92DD
O-72DH
2N4861A
2N5555
2N5638
2N5639
2N5640
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BF 414
Abstract: to92d bc 640 ce bc 630
Text: Transistoren Transistors GaAs MMICs Breitbandverstärker Type GaAs MMICs Broadband Amplifiers Maximum Ratings Characteristics {TA = 25 °C lap mA G dB 2 160 2 160 Vs V Ptot • CGY 21 6.0 ■ CGY 31 6.0 W F ' dB 21.0 1.5 3.9 19 100 . 900 TO-12 48 18.0 2.0
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O-92d
BE35b05
000370b
BF 414
to92d
bc 640 ce
bc 630
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BC182 BC547
Abstract: bc557 TO92C
Text: Transistors For complete package outlines, refer to pages PO-1 through PO-6 General Purpose and Switching Type M axim um Ratings VCBO '< N=NPN P=PNP BC167 BC168 BC169 BC182 BC183 BC212 BC213 BC237 BC238 BC239 BC257 BC258 BC259 BC307 BC308 BC309 BC327 BC328
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BC167
BC168
BC169
BC182
BC183
BC212
BC213
BC237
BC238
BC239
BC182 BC547
bc557
TO92C
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TO-92DD
Abstract: BC264B BC264A BC264C BC264D BF246A BF246B BF246C BF247A BF247B
Text: N - Channel Junction Field Effect Transistors GENERAL PURPOSE TYPE NO. MAXIMUM RATINGS CASE IDSS Yfs VGS ofF Ciss Crss NF (V) max (piO max (PF) max (dB) max 8 8 8 8 14.5 4+ 4+ 4+ 4+ 11 + 1.2+ 1.2+ 1.2+ 1.2+ 3.5+ 2 2 2 2 Pd (mW) BVGSS (V) min max (mmhos) min
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BC264A
O-92DE
BC264B
BC264C
T092DE
BC264D
BF246A
O-92DA
TO-92DD
BF246B
BF246C
BF247A
BF247B
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2N4092
Abstract: NF510
Text: N - Channel Junction Field Effect Transistors SWITCHING/CHOPPING TYPE NO. CASE MAXIMUM RATINGS BVgss Pi mW (V) (mA) min max Vßs(«n) r<W«) C„. (ohms) (pF) (V) min max max max 3 1 0.5 0.5 4 10 5 3 10 6 30 50 100 100 220 10 10 10 15+ 6 4 2 0.5 5 2 10 5
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NF510
2N3966
2N3970
2N3971
2N3972
2N4091
2N4092
2N4093
2N4391
2N4392
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BFT98
Abstract: BF255 transistors bfs17p BFQ71 BF199 BFS55A
Text: RF Bipolar Transistors For complete package outlines, refer to pages PO-1 through PO-6 RF Bipolar Transistors V r CEO l c N=NPN /t NF P=PNP BF199 BF240 BF241 BF254 BF255 BF414 BF450 BF451 BF506 BF606A BF763 BF959 BF970 BFQ69 BFQ70 BFQ71 BFQ72 BFQ73S BFQ74
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BF199
BF240
BF241
BF254
BF255
BF414
BF450
BF451
BF506
BF606A
BFT98
transistors bfs17p
BFQ71
BFS55A
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BSP87
Abstract: bsp296 l BSS125 bss149 to92d
Text: SIPMOS For complete package outlines, refer to pages PO-1 through PO-6 Low Power MOSFETs Type Characteristics T( =25°C M axim um Ratings N = N Channel P = P Channel V BS107 BS170 BSS88 BSS89 BSS91 BSS92 BSS98 BSS100 BSSlOl BSSUO BSS124 BSS125 BSS129 BSS135
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BS107
BS170
BSS88
BSS89
BSS91
BSS92
BSS98
BSS100
BSS124
BSS125
BSP87
bsp296 l
bss149
to92d
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