Untitled
Abstract: No abstract text available
Text: INTEGRATED DEVICE 14E D 4525771 000370b L> BiCMOS PARALLEL FIRST-IN/FIRST-OUT FIFO 4Kx 9-BIT ADVANCE INFORMATION IDT 72B04 T-Y6-3S FEATURES: DESCRIPTION: • • • • • • • • • • • • • • The IDT72B04 Is a dual-port memorythatutilizesaspeclalFlrstIn/First-Out algorithm that loads and empties data on a first-ln/flretout basis. The device uses Full and Empty flags to prevent data
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000370b
72B04
IDT7200/01/02/03/04
28-pln
32-pln
MIL-STD-883,
70/HF
DSC-2035/-
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Untitled
Abstract: No abstract text available
Text: ALLEGRO MICROSYSTEMS INC T3 D • 0504330 0G037G5 b ■ T-91-01 PROCESS JLA Process JLA NPN Small-Signal Transistor P ro c e ss J L A is a double-diffused epitaxial planar N P N silicon device. It is d esign ed for u se in generalp urp ose amplifier and high-current switching circuits.
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0SD433Ã
DDD37DS
T-91-01
800mA
D37Db
T-91-Q1
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74hc273
Abstract: vhc273
Text: ß National Semiconductor 74VHC273 Octal D Flip-Flop General Description The VHC273 is an advanced high speed CMOS Octal D-type flip-flop fabricated with silicon gate CMOS technolo gy. It achieves the high speed operation similar to equiva lent Bipolar Schottky TTL while maintaining the CMOS low
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74VHC273
VHC273
74VHC
bSQ112S
74hc273
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12v to 220v inverter 300w schematic diagram
Abstract: IN4007 silicon diode data sheet 220v 300w ac regulator circuit ELECTRONIC BALLAST 300W circuit diagram irf840 pwm ac sine inverter transformer 220V to 12V 500mA Y2W zener 12v dc 220v ac inverter circuit schematic diagram zener diode y2w BALLAST 300W circuit diagram
Text: U N Doc # ; 1 5 6 2 L fíiF m iT Y M I C R O t L E C T K O N I C S T he I n f i n i t e P o w e r I o f N N O S e c o n d - G e n e r a t i o n P o w e r Fa c t o r C o n t r o l l e r V A T I O N P D r o d u c t i o n DESCRIPTION The LX1562 is a second-generation
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LX1562
SG3561A
22HF/35V
IN4007
pF/50V
1N4935
01pF/50V
1N4148
33pF/50V
MR856,
12v to 220v inverter 300w schematic diagram
IN4007 silicon diode data sheet
220v 300w ac regulator circuit
ELECTRONIC BALLAST 300W circuit diagram
irf840 pwm ac sine inverter
transformer 220V to 12V 500mA
Y2W zener
12v dc 220v ac inverter circuit schematic diagram
zener diode y2w
BALLAST 300W circuit diagram
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BF 414
Abstract: to92d bc 640 ce bc 630
Text: Transistoren Transistors GaAs MMICs Breitbandverstärker Type GaAs MMICs Broadband Amplifiers Maximum Ratings Characteristics {TA = 25 °C lap mA G dB 2 160 2 160 Vs V Ptot • CGY 21 6.0 ■ CGY 31 6.0 W F ' dB 21.0 1.5 3.9 19 100 . 900 TO-12 48 18.0 2.0
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O-92d
BE35b05
000370b
BF 414
to92d
bc 640 ce
bc 630
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EPM7032
Abstract: No abstract text available
Text: EPM7032 EPLD M . 32-Macrocell Programmable Logic Device September 1993, ver. 3 Features Data Sheet □ □ □ □ □ □ □ □ High-performance, erasable CMOS EPLD based on second-generation MAX architecture 600 usable gates Combinatorial speeds with t PD = 7.5 ns
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EPM7032
32-Macrocell
44-pin
EPM7032V-12,
EPM7032V-15,
EPM7032V-20
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Untitled
Abstract: No abstract text available
Text: LINEAR INTEGRATED CIRCUITS 30-Lead DIP, See Diag. 536 NTE1800 TV Multiplex Sound Decoder, Vcc = 12VTyp G ND L im ite r A m p Input Filte r C ap n Filte r C ap 3 S AP Lam p B S te re o Lam p Q P hase C o m p C a p Q P hase C o m p C ap P hase C o m p Input
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30-Lead
NTE1800
12VTyp
28-Lead
NTE1801
000370b
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Untitled
Abstract: No abstract text available
Text: GM7 1 C4 1 0 0 B/BL G oldStar 4,194,304 WORDS x l BIT CMOS DYNAMIC RAM GOLDSTAR ELECTRON CO., LTD. Description Features The GM71C4100B/BL is the new generation dy nam ic RAM organized 4 ,1 9 4 ,3 0 4 x 1 Bit. GM71C4100B/BL has realized higher density, higher performance and various functions by
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GM71C4100B/BL
M02fi7S7
71C4100B/BL
20SOJ
GM71C4100BT/BLT
GM71C4100BR/BLR
G3721
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3015 hj
Abstract: SK 1117
Text: 1 V A V 'C L J V DSS MegaMOS FET IXTH/IXTM10 N100 IXTH/IXTM12 N100 p ^D25 DS on 1000 V 10 A 1.20 a 1000 V 12 A 1.05 q N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V *DSS Tj = 25 °C to 150°C 1000 V vDGR Tj = 25°C to 150°C; RGS = 1 M n
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IXTH/IXTM10
IXTH/IXTM12
10N100
12N100
O-247
O-204
12N100
IXTM12N100
100ps
3015 hj
SK 1117
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bq4025
Abstract: bq4025Y 137001
Text: bq4025/bq4025Y t j BENCHMARQ 256Kx16 Nonvolatile SRAM Features General Description >• D ata retention in th e absence of power T he CMOS bq4025 is a nonvolatile 4,194,304-bit static RAM organized as 2 6 2 ,1 4 4 w o rd s b y 16 b its . T h e integral control circuitry and lithium
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bq4025/bq4025Y
256Kx16
40-pin
bq4025
304-bit
i37aan
DG037CH
bq4025Y
137001
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STM-1 Physical interface PHY
Abstract: TCA240 341fh rca 645 PM4341A PM6341 PM7344 PM7345 PUB54016 E1 HDB3
Text: PMC-Sierra, Inc. • " ISSUE 5 PM7344 S/UNI-MPH SATURN QUAD T1/E1 MULTI-PHY USER NETWORK INTERFACE FEA TU RES • Single chip quad ATM User Network Interface operating at 1.544 Mbit/s or 2.048 Mbit/s. • Implements the ATM Forum User Network Interface Specification V3.1 for DS1
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PM7344
14x20x2
STM-1 Physical interface PHY
TCA240
341fh
rca 645
PM4341A
PM6341
PM7345
PUB54016
E1 HDB3
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Untitled
Abstract: No abstract text available
Text: OIXYS l«»v .laBT IXSH/IXSM 25 N100 IXSH/IXSM 25 N100A High Speed IGBT V* C E S ^C25 V * CE sat 1000 V 1000 V 50 A 50 A 3.5 V 4.0 V Short Circuit SOA Capability Sym bol T est C o n dition s M axim um R atings v CES T j = 25°C to 150°C 1000 V V CGR T j = 25°C to 150°C; RGE = 1 M il
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N100A
25N100
25N1OOA
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V53C664H
Abstract: mosel MT
Text: MOSEL VITELIC V53C664H 6 4 K x 16 B IT F A S T P A G E M O D E B Y TE W RITE CM OS D YN A M IC R A M V53C664H 50 55 60 Max. RAS Access Time, tRAC 50 ns 55 ns 60 ns Max. Column Address Access Time, (tCAA) 26 ns 28 ns 30 ns Min. Fast Page Mode Cycle Time, (tpc)
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V53C664H
V53C664H
110ns
16-bit
-l/016
00G3717
40-Pin
mosel MT
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MQ02
Abstract: cga to vga 6845 crt controller imsg171 HGC hercules 6845 8bit vga controller CL-GD610 crt controller 6845 gd510 cga to vga circuits
Text: CIRRUS LOGIC INC blE D 213bb3T 000377b 202 « C I R CL-GD610/620-C D ata Sheet 'CIRRUS LOGIC ' ' ' ' p 3 2 ' 3 3 - ' JJ 5 FEATURES • Supports dual-scan and slngle-scan LCD panels ■ Supports gas plasma and EL panels Flat Panel/CRT Enhanced VGA Controller
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213bb3T
000377b
CL-GD610/620-C
19-resolution
16-blt
CL-GD610
-32QC-C
GD620
MQ02
cga to vga
6845 crt controller
imsg171
HGC hercules
6845 8bit vga controller
crt controller 6845
gd510
cga to vga circuits
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0520K
Abstract: ecg1027 3243J G1027
Text: P H IL IP S E C G INC 17E tjk53c]2fl 0G037Ö2 E C G 1027 AUDIO POWER AMPLIFIER MODULE semiconductors FO R 13 W ATTS TYP. A F POWER A M PLIFIER 1 POW ER SUPPLY EQUIVALENT C IR C U IT ► 7 ,2 * 3.24 . 3j j O i 1 *4 0.S 3.0 *I H f.2 0 vii. ,_j dim ensions
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tjk53c
0G037
EC01027
000370b
ECG1027
0520K
ecg1027
3243J
G1027
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mhs 80C32
Abstract: 80C32-N 80C52-N MHS80C32 MHS 80c52 80c52p
Text: DATA SHEET 8 0 C 3 2 u /8 0 C 5 2 u HIGH SPEED 0 TO 42 MHz SINGLE-CHIP 8 BIT MICROCONTROLLER 80C32|i/80C52ji-30 : 80C32^/80C52|i-36 : 80C32|i/80C52|i-40 : 80C32ji/80C52n-42: 80C32(i : ROMLESS VERSION OF THE 80C52|i 80C32|j/80C52|i-L : LOW POWER VERSION 2.7 V < Vcc < 5.5 V ; 0 < Fhz < 16 MHz
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80C32
80C52
j/80C52
80C32n
0C52n-S
i/80C52ji-30
mhs 80C32
80C32-N
80C52-N
MHS80C32
MHS 80c52
80c52p
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1N474BA
Abstract: 1N474B 1N472SA IN4730A 1N47S6A 1N472B 1N47S9A
Text: áS 1N4728A thru 1N4764A PLASTIC Microsemi Corp. ? The diocle e*pens SCOTTSDALE, A 2 • ■ ¡» i For mûre information call: / 6 0 2 9 4 1 -6 3 0 0 FEATURES SILICON 1 WATT ZEN ER DIODES • 3.3 THRU 100 VOLT VOLTAGE RANGE • HIGH S0RGE C0RFENT RATING
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1N4728A
1N4764A
1N474BA
1N474B
1N472SA
IN4730A
1N47S6A
1N472B
1N47S9A
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FLT-U2
Abstract: GENERAL DESIGN PROCEDURE FOR BANDPASS FILTERS lowpass filter 20khz 1590P
Text: 9 D A T E L FLT-U2 INNOVATION a n d EXCELLENCE Universal Active Filter FEATURES • • • • • State variable filter Output to 200kHz 2-Pole response LP, BP or HP functions Q range from 0.1 to 1,000 Resonant frequency accuracy ±5% Frequency stability ±0.01 %/°C
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200kHz
0G03703
FLT-U2
GENERAL DESIGN PROCEDURE FOR BANDPASS FILTERS
lowpass filter 20khz
1590P
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