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    Philips Semiconductors BSS89

    N-CHANNEL ENHANCEMENT IGBT TO-92 Small Signal Field-Effect Transistor, 0.3A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
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    BSS89 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BSS89 Infineon Technologies SIPMOS Small-Signal Transistor Original PDF
    BSS89 Philips Semiconductors N-channel enhancement mode MOS transistor Original PDF
    BSS89 Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor Original PDF
    BSS89 Philips Semiconductors N-Channel Enhancement Mode Vertical D-MOS Transistor Original PDF
    BSS89 Siemens SIPMOS Small-Signal Transistor Original PDF
    BSS89 Siemens Original PDF
    BSS89 Siemens SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) Original PDF
    BSS89 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BSS89 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BSS89 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BSS89 Unknown FET Data Book Scan PDF
    BSS89 Philips Semiconductors N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR Scan PDF
    BSS89AMO Philips Semiconductors N-channel Enhancement Mode Vertical D-mos Transistor Original PDF
    BSS89AMO Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    BSS89E6288 Infineon Technologies N-Channel SIPMOS Small-Signal Transistor Original PDF
    BSS89-E6288 Infineon Technologies SIPMOS Small-Signal Transistor Original PDF
    BSS89E6296 Infineon Technologies SIPMOS Small-Signal Transistor Original PDF
    BSS89E6325 Infineon Technologies N-Channel SIPMOS Small-Signal Transistor Original PDF
    BSS89T/R Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    BSS89 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BSS89

    Abstract: BSS89 APPLICATION BP317 MBB692
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BSS89 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 20 File under Discrete Semiconductors, SC13b 1998 Apr 24 Philips Semiconductors Product specification N-channel enhancement mode


    Original     		PDF BSS89 SC13b SCA54 137108/00/03/pp8 BSS89 BSS89 APPLICATION BP317 MBB692

    transistor mosfet buv18a

    Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
    Text: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9


    Original     		PDF

    BC337 BC547

    Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
    Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the


    Original     		PDF MDC5000T1 MDC3105LT1 BC337 BC547 MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM

    MSC2404

    Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage


    Original     		PDF MSA1022-CT1 Emitte218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72

    BF245

    Abstract: BC237 MSC2404 mps8093 bf244 MSA1022 MSC2295-BT1 msc2295 MAD1107P MPS6568
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN RF Amplifier Transistors Surface Mount COLLECTOR 3 MSC2295-BT1 MSC2295-CT1 Motorola Preferred Devices 3 2 BASE 1 EMITTER 2 1 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30


    Original     		PDF MSC2295-BT1 MSC2295-CT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BF245 BC237 mps8093 bf244 MSA1022 msc2295 MAD1107P MPS6568

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


    Original     		PDF MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417

    stencil

    Abstract: BC237 automatic heat detector project report BC393 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diode BAT54T1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and


    Original     		PDF BAT54T1 Ju218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 stencil BC237 automatic heat detector project report BC393 equivalent

    BC237

    Abstract: level shifter 2N5401 2771 040 0002 MUN5214T1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device


    Original     		PDF SC-70/SOT-323 Spa218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 level shifter 2N5401 2771 040 0002 MUN5214T1

    bs170 replacement

    Abstract: BC237 BC30 transistor K 2056
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Switching BS170 N–Channel — Enhancement 1 DRAIN  2 GATE 3 SOURCE MAXIMUM RATINGS 1 Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs Drain Current(1)


    Original     		PDF BS170 226AA) DS218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 bs170 replacement BC237 BC30 transistor K 2056

    transistor scans sheet

    Abstract: BSS89 B3 transistor
    Text: V> EL J I BSS89 m ^53*124 ÜD7ÛÛ25 4ÖM I SIC3 NAPC/PHILIPS SEMICOND FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 O R DATA SH EET N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope. Designed prim arily as


    OCR Scan     		PDF BSS89 400mA transistor scans sheet BSS89 B3 transistor

    Untitled

    Abstract: No abstract text available
    Text: BSS89 In fin e o n technologies SIPMOS * Small-Signal Transistor • N channel • Enhancement mode • Logic Level * W = ° - 8- 2 0 V Type Vbs t flDS on) Package Marking BSS89 240 V 0.3 A en TO-92 SS89 Typ* BSS89 BSS89 BSS89 Ordering Code Q62702-S519 Q62702-S619


    OCR Scan     		PDF BSS89 Q62702-S519 Q62702-S619 Q62702-S385 E6288 E6296

    Untitled

    Abstract: No abstract text available
    Text: BSS89 _ FOR MORE DETAILED INFORMATION SEE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope. Designed prim arily as


    OCR Scan     		PDF BSS89

    ap 4466

    Abstract: transistor 359 AJ BSS89 APPLICATION
    Text: DISC RETE S E M IC O N D U C TO R S [n]EE¥ BSS89 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 20 File under Discrete Semiconductors, SC13b Philips Semiconductors 1998 Apr 24 PHILIPS PHILIPS Philips S e m ico nd uctors


    OCR Scan     		PDF BSS89 SC13b SCA54 137108/00/03/pp8 ap 4466 transistor 359 AJ BSS89 APPLICATION

    Untitled

    Abstract: No abstract text available
    Text: BSS89 _ J V_ N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope. Designed prim arily as a line current interrupter in telephone sets, it can also be applied in other applications such as in relays, line


    OCR Scan     		PDF BSS89 003bllb 003bll7

    Untitled

    Abstract: No abstract text available
    Text: BSS89 ' i _ vv FOR DETAILED INFORMATION! SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope. Designed primarily as


    OCR Scan     		PDF BSS89

    BSS89 APPLICATION

    Abstract: bss89 BSS89/D
    Text: MOTOROLA Order this document by BSS89/D SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N-Channel — Enhancement 2 DRAIN MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage VDSS 200 Vdc Gate-Source Voltage — Continuous — Non-repetitive tp < 50 p.s


    OCR Scan     		PDF BSS89/D BSS89 APPLICATION bss89 BSS89/D

    BSS89

    Abstract: BSS89/D
    Text: IfiE j> SILICONIX INC m Ö2S4735 0014043 b ÆTi?c_onix • « BSS89 incorporated N-Channel Enhancem ent-M ode MOS Transistor T-2J7-ZS PRODUCT SUMMARY BOTTOM VIEW TO-92-18 V BR DSS (V) TDS(ON) (fl) Id (A) PACKAGE 200 6 0.3 TO-92 CD 1 GATE 2 DRAIN 3 SOURCE


    OCR Scan     		PDF 2S4735 BSS89 O-92-18 VNDB24 BSS89 BSS89/D

    BSP87

    Abstract: bsp296 l BSS125 bss149 to92d
    Text: SIPMOS For complete package outlines, refer to pages PO-1 through PO-6 Low Power MOSFETs Type Characteristics T( =25°C M axim um Ratings N = N Channel P = P Channel V BS107 BS170 BSS88 BSS89 BSS91 BSS92 BSS98 BSS100 BSSlOl BSSUO BSS124 BSS125 BSS129 BSS135


    OCR Scan     		PDF BS107 BS170 BSS88 BSS89 BSS91 BSS92 BSS98 BSS100 BSS124 BSS125 BSP87 bsp296 l bss149 to92d

    sot23 BS170

    Abstract: 2SK2671 P3NB60 IXFN27N80 IRFL014N STP22NE10L irf6348 IRF7305 rfp40n IXTN21N100
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi N-MOSFET (copTMpoBKa no TOKy lD) Kofl: BS107 BSS123 BS170 BSS138 BS108 BSN304 BSS89 IRFD310 IRFD420 IRFD210 IRFD320 2N7002 IRFD220 IRFL210 IRFD110 IRLD110 IRFD120


    OCR Scan     		PDF BS107 BSS123 BS170 BSS138 BS108 BSN304 BSS89 IRFD310 IRFD420 IRFD210 sot23 BS170 2SK2671 P3NB60 IXFN27N80 IRFL014N STP22NE10L irf6348 IRF7305 rfp40n IXTN21N100

    KAG TRANSISTOR

    Abstract: No abstract text available
    Text: BSS89 CASE 29-04, STYLE 7 TO-92 TO-226AA M AXIM UM RATINGS Rating Symbol Value Unit D ra in -S o u rc e V o lta g e VDSS 200 Vdc G a te -S o u rc e V o lta g e Vg s ±20 V dc m Adc 'd m 400 800 Pd 350 mW m W -’X D ra in C u rre n t — C o n tin u o u s (1 1


    OCR Scan     		PDF BSS89 O-226AA) KAG TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSS89 FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET N -ch an n e l e n h a n c e m e n t m o d e v e rtic a l D -M O S tra n s is to r in a T O -9 2 v a ria n t en ve lo pe . D esigned p r im a r ily as


    OCR Scan     		PDF BSS89

    MMBF112L

    Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
    Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty


    OCR Scan     		PDF 06050L MMBD914L BAS16L BAL99L MBAV70L MBAV99L MBAV74 BD2835XL MBD2836XL MMBD2837XL MMBF112L MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


    OCR Scan     		PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845

    MPF89

    Abstract: BSS89 "cross reference" VN2410L "cross reference" MPF910 VN0300L "cross reference" VN10LM "cross reference" MPF960 "cross reference" Mosfet 2n7000 MPF6661 "cross reference" BSS89
    Text: Small-Signal TMOS MOSFETs Table 17 — TMOS Switches and Choppers T he follow ing is a listing of sm all-sig na l T M O S d e vice s that are in te nd ed for sw itch ing and ch o p p e r applicatio ns. vDss C iS8 Crs8 *on »off V Min PF Max PF Max ns Max ns


    OCR Scan     		PDF O-226AE MPF930 MPF960 MPF6659 MPF990 MPF6660 MPF6661 MPF910 VN10LM MPF89 BSS89 "cross reference" VN2410L "cross reference" VN0300L "cross reference" VN10LM "cross reference" MPF960 "cross reference" Mosfet 2n7000 MPF6661 "cross reference" BSS89