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    siemens sab 82532

    Abstract: 82258 SA 82532 SAB 80286 csc 2323 sab80286 STT 3 SIEMENS 80286 microprocessor pin out diagram ESCC2 siemens sab 82525
    Text: SIEM ENS Enhanced Serial Communication Controller ESCC2 SAB 82532 Preliminary Data 1.1 CMOS 1C General Features S erial Interface • Two independent full duplex serial channels - On chip clock generation or external clock source - On chip DPLL for clock recovery of each


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    PDF CRC-32 235b05 82532N-10. 00702fl2 siemens sab 82532 82258 SA 82532 SAB 80286 csc 2323 sab80286 STT 3 SIEMENS 80286 microprocessor pin out diagram ESCC2 siemens sab 82525

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Silizium-4-Quadranten-Fotodiode Silicon Four Quadrant Photodiode Chip position • SFH 234 S Common Cathode 2.0 s 0.45 i— L LO O Ni O OCO ct>ct> c o c o c d m* ^ rrfl 3 .0 j _14.5 12.5" 0.3max Radiant sensitive area 0.5x0.5mm each Approx. weight 1.5 g


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    PDF fl235b05 6535b05

    Untitled

    Abstract: No abstract text available
    Text: S IE M E N S Silicon Variable Capacitance Diode B B 639 • For tuning of extended frequency bands •in V H F TV/VTR tuners ty p e BB 639 Ordering Code Pin Configuration tape and reel 1 2 Q62702-B586 C A Marking Package yellow S SOD-323 Maximum Ratings


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    PDF Q62702-B586 OD-323 D12DMb2 6535b05 01HQ4bB

    B158-H6497-X-X-7600

    Abstract: A535B old Resistors Siemens s
    Text: SIEMENS High-Performance 8-Bit CMOS Single-Chip Microcontroller SAB 80C517A/83C517A-5 Preliminary SAB 83C517A-5 SAB 80C517A Microcontroller with factory mask-programmable ROM Microcontroller for external ROM • SAB 80C517A/83C517A-5, up to 18 MHz operation


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    PDF 83C517A-5 80C517A 10-bit 80C515, 80C517, 80C515A P-LCC-84, P-MQFP-100-2 80C517A/83C5r MQFP--100 B158-H6497-X-X-7600 A535B old Resistors Siemens s

    DIODE 3LU

    Abstract: D959 Q62702-D961 Q62702-D959 3lu diode BD 862 Diode 864
    Text: " 2SC D • 023SbOS 0004417 1mSIEG r T-33“31. ; PNP Silicon Darlington Transistors SIEMENS Epibase BD 862 AKTIENGESELLSCHAF ° - ! p o w e r d arlin g to n transistors 1 5 W | BD 8 6 2 , BD 8 6 4 , and BD 8 6 6 are monolithic silicon PNP epibase power darlington transistors


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    PDF 023SbOS -50V- Tmm1S25Â DQG4420 DIODE 3LU D959 Q62702-D961 Q62702-D959 3lu diode BD 862 Diode 864

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS PNP Silicon Switching Transistor SMBT 3906 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 3904 NPN Type Marking Ordering Code (tape and reel) PinCtonfigu ration 1 2 3 Package1)


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    PDF Q68000-A4417 OT-23 EHP00770 EHP00772 S35bOÂ 01EES4S A235b05 012254b

    Untitled

    Abstract: No abstract text available
    Text: Ö235b05 QGD4440 7 « S I E Û SSC D PNP Silicon Planar Transistors SIEMENS AKTIENGESELLSCHAF 04440 7 "- l l - z ! BDX27 BDX28 D - BDX 29 BDX 30 BDX 27, BDX 28, BDX 29, and BDX 30 are epitaxial PNP silicon power transistors in SOT 9 case 9 A 2 DIN 41875 . The collector is electrically connected to the case.


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    PDF 235b05 QGD4440 BDX27 BDX28 Q62702-D162 Q62702-D162-V6 Q62702-D162-V10 Q62702-D162-V16 Q62702-D159 Q62702-D159-V6

    s259b

    Abstract: No abstract text available
    Text: QBE D • Û235b05 OülblbH 3 « S I E G Light Emitting Diodes ii / T LG S259 LSS259 Q LED low-current single diodes • • • • • • Backlighting of LCDs Indicator for switching and operation modes Direct drive is possible via CMOS gate and LSTTL components


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    PDF 235b05 LSS259 Q62703-Q1598 Q62703-Q1579 Q62703-Q1599 18-cm-reel 33-cm-reel E-7503 E-7502 Q62703-Q1566 s259b

    B45181

    Abstract: marking 7EU C4335
    Text: B 45 181 B 45 185-A, B 45 185-V Radial-Lead Capacitors with Solid Electrolyte Construction • • • Tantalum capacitors with solid electrolyte, polar M olded encapsulation, flam e-retardant UL 94 V-0 Radial wire leads with standard spacing (nickel-coated wire, tinned)


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    PDF 235bOS Q075071 007S07S 6535b05 0Q7S073 B45181 marking 7EU C4335

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 93AW NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


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    PDF Q62702-F1489 OT-323 Q122QS3 900MHz

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon AF Transistors • • • • • BCX 68 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary type: BCX 69 PNP BCX 68 BCX 68-10 BCX 68-16 BCX 68-25 Marking CB CC


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    PDF Q62702-C1572 Q62702-C1864 Q62702-C1865 Q62702-C1866 OT-89 BCX68 fiS35bCI5

    Untitled

    Abstract: No abstract text available
    Text: ,• SIEM EN S ñSBSbüS 002*^5= T ■ S I E G SIEMENS A KTIENGESELLSCHAF M7E D SAB 80C166/83C166 High-Performance 16-Bit CMOS Single-Chip Microcontrollers for Embedded Control Applications Advance Information SAB 83C166-3S SAB 80C166-S • • • • •


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    PDF 80C166/83C166 16-Bit 83C166-3S 80C166-S 16-bit 16x16

    B62152A0008X030

    Abstract: smd code 10y 2205-T PMB2205 2205S
    Text: SIEMENS Quadrature Phase Modulator PM B 2205 Preliminary Data Bipolar 1C Features • • • • • • • • • • • • • • • • • Double-balanced mixers Direct modulation Linear modulating inputs Symmetrical circuitry Generation of orthogonal carriers within a wide


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    PDF P-DSO-20-1 P-DSO-20-4 fiE3Sb05 0DS111S B62152A0008X030 smd code 10y 2205-T PMB2205 2205S

    smd transistor marking a2h

    Abstract: smd transistor marking a7h smd transistor marking a1h 81C91 smd TRANSISTOR code marking A4H SAE81C90 transistor marking code TS2 smd transistor marking p14 cpu 222 siemens TRANSISTOR SMD MARKING CODE BCH
    Text: SIEMENS Stand Alone Full CAN Controller SAE 81C90/91 P r e lim in a r y D a ta • • Full CAN controller for data rate up to 1 Mbaud Com plies with CAN specification V2.0 part A part B passive • Up to 16 messages simultaneous (each with maximum data length)


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    PDF 81C90/91 P-LCC-44-1 P-LCC-44-1 81C90 I/O15 235b05 G07T7Ã smd transistor marking a2h smd transistor marking a7h smd transistor marking a1h 81C91 smd TRANSISTOR code marking A4H SAE81C90 transistor marking code TS2 smd transistor marking p14 cpu 222 siemens TRANSISTOR SMD MARKING CODE BCH

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS 8-Bit CMOS Microcontroller C517A Advance Information • • • • • • • • • • Full upward compatibility with SAB 80C517A/83C517A-5 Up to 24 MHz external operating frequency - 500 ns instruction cycle at 24 MHz operation Superset of the 8051 architecture with 8 datapointers


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    PDF C517A 80C517A/83C517A-5 P-MQFP-100-2 A235bOS

    SIEMENS 3 TB 40 12 - 0A

    Abstract: smd transistor 2T5 SIEMENS 3 TB 40 10 - 0A SIEMENS 3 TB 40 17 - 0A
    Text: SIEMENS ISDN Subscriber Access Controller for UpN-lnterface Terminals ISAC -P TE PSB 2196 Preliminary Data 1 • • • • • • • • • • CMOS IC Features Cost/performance-optimized UPN-interface transceiver, compatible to PEB 2096 OCTAT-P HDLC-controller with 2 x 32 byte FIFO per direction


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    PDF Q67100-H6392 P-LGC-44- 00bfl701 SIEMENS 3 TB 40 12 - 0A smd transistor 2T5 SIEMENS 3 TB 40 10 - 0A SIEMENS 3 TB 40 17 - 0A

    kss 210

    Abstract: Q67100-Q3016 Q67100-Q3017
    Text: SIEM E N S 4M X 36-Bit EDO-DRAM Module HYM 364035S/GS-60 Advanced Inform ation • 4 194 304 words by 36-Bit organization • Fast access and cycle time 60 ns RAS access time 15 ns CAS access time 104 ns cycle time • Hyper page mode EDO capability 25 ns cycle time


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    PDF 36-Bit 364035S/GS-60 L-SIM-72) L-SIM-72-13 75x157 kss 210 Q67100-Q3016 Q67100-Q3017

    t07 transistor smd

    Abstract: smd transistor 2T6 SMD Transistor t07
    Text: • flE35b05 00fll430 T07 ■ SIEMENS PROFET BTS410E2 Smart Highside Power Switch Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation Features • • • • • • • • • • • •


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    PDF flE35b05 00fll430 BTS410E2 fl23Sb05 O-220AB/5 410E2 O-22QAB/5, E3043 Q67060-S6102-A2 410E2 t07 transistor smd smd transistor 2T6 SMD Transistor t07

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS CGY 181 GaAs MMIC Preliminary Data • • • • • Power amplifier for PCN/PCS applications Fully integrated 2 stage amplifier Operating voltage range: 2.7 to 6 V Overall power added efficiency 35 % Input matched to 50 Q, simple output match ESD: Electrostatic discharge sensitive device,


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    PDF Q68000-A8883 fl235b05

    transistor zo 103 MA 7S 738

    Abstract: BFQ72 SiEMENS PM 350 98 Q62702-F776 VCE05181 siemens 350 98 siemens Pm 90 87
    Text: SIEMENS NPN Silicon RF Transistor • For low-distortion broadband amplifiers up to 2 GHz at collector currents from 10 mA to 30 mA. • Hermetically sealed ceramic package. • HiRel/Mil screening available. £ CECC-type available: CECC 50002/263. ESD: Electrostatic discharge sensitive device, observe handling precautions!


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    PDF BFQ72 Q62702-F776 fl235b05 00b714S transistor zo 103 MA 7S 738 SiEMENS PM 350 98 VCE05181 siemens 350 98 siemens Pm 90 87

    TUA4300P

    Abstract: No abstract text available
    Text: SIEMENS One-Chip Car Radio 1 Overview 1.1 Application TUA 4300P The TUA 4300P is a one-chip car radio system consist­ ing of AM/FM receiver, AM-up/down conversion, AGC amplifier/demodulator, FM-IF limiter amplifier/demodu­ lator and stereo decoder/noiseblanker.


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    PDF 4300P 4300P 535b05 fi23SbDS P-LCC-68-1 12x45Â TUA4300P

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 3.3 V 168 pin Registered SDRAM Modules HYS 72V8200GR HYS 72V16200GR HYS 72V32200GR HYS 72V32220GR HYS 72V64200GR HYS 72V128220GR 64MB, 128MB, 256MB, 512MB & 1GB Densities Preliminary Information • 168 Pin JEDEC Standard, Registered 8 Byte Dual-In-Line SDRAM Module


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    PDF 72V8200GR 72V16200GR 72V32200GR 72V32220GR 72V64200GR 72V128220GR 128MB, 256MB, 512MB D12342Ã

    smd marking code BS sot-23 infineon

    Abstract: No abstract text available
    Text: BSS 83P Infineon f*chnologj*4 Preliminary Data SIPMOS Small-Signal-T ransistor Features Product Summary • P Channel Drain source voltage '/os • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current wDS oni 2 -0.33


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    PDF OT-23 Q67041-S1416 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T smd marking code BS sot-23 infineon