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    TO92 FET P CHANNEL Search Results

    TO92 FET P CHANNEL Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TO92 FET P CHANNEL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ZVP2110A

    Abstract: No abstract text available
    Text: Not Recommended for New Design Please Use ZVP2110A P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2110C P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – MARCH 94 FEATURES * 100 Volt VDS * RDS on =8Ω G REFER TO ZVP2110A FOR GRAPHS D G D S E-Line TO92 Compatible


    Original     		PDF ZVP2110A ZVP2110C ZVP2110A -375mA -375mA

    ZVP2106

    Abstract: zvp2106a
    Text: Not Recommended for New Design Please Use ZVP2106A P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2106C ISSUE 2 – MARCH 94 FEATURES * 60 Volt VDS * RDS on =5Ω G D REFER TO ZVP2106A FOR GRAPHS S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER


    Original     		PDF ZVP2106A ZVP2106C ZVP2106A -500mA -500mA ZVP2106

    Untitled

    Abstract: No abstract text available
    Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP4424A ISSUE 2 – SEPTEMBER 94 FEATURES * 240 Volt VDS * RDS on =9Ω * Low threshold APPLICATIONS * Electronic Hook Switch D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage


    Original     		PDF ZVP4424A -100V

    3412 to92

    Abstract: fet to92 3TF20 ZVP054 to92 fet p channel ZVP0540A P-Channel Enhancement Mode Vertical DMOS FET VDS25 DSA003786
    Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP0540A ISSUE 2 – MARCH 94 FEATURES * 400 Volt VDS * RDS on =150Ω D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS VALUE -400 UNIT V Continuous Drain Current at Tamb=25°C


    Original     		PDF ZVP0540A -50mA 3412 to92 fet to92 3TF20 ZVP054 to92 fet p channel ZVP0540A P-Channel Enhancement Mode Vertical DMOS FET VDS25 DSA003786

    Untitled

    Abstract: No abstract text available
    Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP3306A ISSUE 2 – MARCH 94 FEATURES * 60 Volt VDS * RDS on =14Ω D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS -60 V Continuous Drain Current at Tamb=25°C


    Original     		PDF ZVP3306A

    ZVP3310A

    Abstract: No abstract text available
    Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP3310A ISSUE 2 – MARCH 94 FEATURES * 100 Volt VDS * RDS on =20Ω D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS -100 V Continuous Drain Current at Tamb=25°C


    Original     		PDF ZVP3310A -100V ZVP3310A

    Untitled

    Abstract: No abstract text available
    Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP0545A ISSUE 2 – MARCH 94 FEATURES * 450 Volt VDS * RDS on =150Ω D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS VALUE UNIT -450 V Continuous Drain Current at Tamb=25°C


    Original     		PDF ZVP0545A -50mA

    Untitled

    Abstract: No abstract text available
    Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2120A ISSUE 2 – MARCH 94 FEATURES * 200 Volt VDS * RDS on =25Ω D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS VALUE -200 UNIT V Continuous Drain Current at Tamb=25°C


    Original     		PDF ZVP2120A -100V -180V

    to92 fet p channel

    Abstract: ZVP0545A DSA003786 3TF20
    Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP0545A ISSUE 2 – MARCH 94 FEATURES * 450 Volt VDS * RDS on =150Ω D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS VALUE UNIT -450 V Continuous Drain Current at Tamb=25°C


    Original     		PDF ZVP0545A -50mA to92 fet p channel ZVP0545A DSA003786 3TF20

    Untitled

    Abstract: No abstract text available
    Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP4105A ISSUE 2 – MARCH 94 FEATURES * 50 Volt VDS * RDS on =10Ω * Low threshold D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS -50 V Continuous Drain Current at Tamb=25°C


    Original     		PDF ZVP4105A -100mA -270mA

    BS250p

    Abstract: ZVP2106A fet to92 to92 fet p channel bs250 to92 fet DSA0037522
    Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BS250P ISSUE 2 – SEPT 93 FEATURES * 45 Volt VDS * RDS on =14Ω D G REFER TO ZVP2106A FOR GRAPHS S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS -45 V Continuous Drain Current at Tamb =25°C


    Original     		PDF BS250P ZVP2106A -200mA -500mA BS250p fet to92 to92 fet p channel bs250 to92 fet DSA0037522

    zvp2106a

    Abstract: ZVP2106C
    Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2106C ISSUE 2 – MARCH 94 FEATURES * 60 Volt VDS * RDS on =5Ω G D REFER TO ZVP2106A FOR GRAPHS S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS VALUE -60 UNIT V Continuous Drain Current at Tamb=25°C


    Original     		PDF ZVP2106C ZVP2106A -500mA ZVP2106C

    ZVP2106A

    Abstract: No abstract text available
    Text: P-CHANNEL ENHANCEM ENT M ODE VERTICAL DM OS FET ZVP2106A ISSUE 2 – M ARCH 94 FEATURES * 60 Volt VDS * RDS on =5Ω D G S E-Line TO92 Compatible ABSOLUTE M AXIM UM RATINGS. PA RA M ETER SYM BOL VALUE UNIT Dr ai n-Sou rce Vo l t ag e V DS -60 V Contin uo us Drain Cur r en t at T am b=25°C


    Original     		PDF ZVP2106A ZVP2106A

    Untitled

    Abstract: No abstract text available
    Text: P-CHANNEL ENHANCEM ENT M ODE VERTICAL DM OS FET ZVP2110A ISSUE 2 – M ARCH 94 FEATURES * 100 Volt VDS * RDS on =8Ω D G S E-Line TO92 Compatible ABSOLUTE M AXIM UM RATINGS. PA RA M ETER SYM BOL VALUE UNIT Dr ai n-Sou rce Vo l t ag e V DS -100 V Contin uo us Drain Cur r en t at T am b=25°C


    Original     		PDF ZVP2110A -100V

    KSK30OBU

    Abstract: No abstract text available
    Text: KSK30 KSK30 Low Noise PRE-AMP. Use • High Input Impedance: IGSS=1nA MAX • Low Noise: NF=0.5dB (TYP) • High Voltage: VGDS= -50V TO-92 1 1. Source 2. Gate 3. Drain Silicon N-channel Junction Fet Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF KSK30 KSK30OBU

    FET BFW10

    Abstract: BC244 Fet NF510 NF510 Fet 2SK520 BFW10 FET FET bf244 FET tis34 NF510 NEC 200j
    Text: JUNCTION FET Item Number Part Number 91. IDSS Manufacturer VOS Off CI. Max Max PD Max Toper Max Package Style N-Channel JFETs, (Co nt' d) 5 10 15 20 TP4224 2N4224 SMP5248 TMPF5248 TP5248 TP5248 BFW10 MMF1 MMF2 MMF3 4 MMF5 MMF6 SMP3823 TIS34 TMPF3823 TP3823


    Original     		PDF TP4224 2N4224 SMP5248 TMPF5248 TP5248 BFW10 SMP3823 TIS34 TMPF3823 FET BFW10 BC244 Fet NF510 NF510 Fet 2SK520 BFW10 FET FET bf244 FET tis34 NF510 NEC 200j

    Untitled

    Abstract: No abstract text available
    Text: KSK117 KSK117 Low Requency Low Noise AMP • HighYFS: 15mS TYP • High Input Impedance: IGSS= -1nA • Low Noise, NF =1dB (TYP) TO-92 1 1. Drain 2. Gate 3. Source Silicon N-channel Junction Fet Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF KSK117

    FJN598J

    Abstract: No abstract text available
    Text: FJN598J FJN598J Capacitor Microphone Applications • Especially Suited for use in Audio, Telephone Capacitor Microphones • Excellent Voltage Characteristic • Excellent Transient Characteristic TO-92 1 1. Source 2. Gate 3. Drain Si N-channel Junction FET


    Original     		PDF FJN598J FJN598J

    transistor

    Abstract: POWER MOS FET 2sj 2sk transistor 2sk 2SK type n channel fet array Low frequency power transistor transistor mp40 TRANSISTOR P 3 high hfe transistor list
    Text: Transistor Bipolar Transistor Transistor with Internal Resistor Quick Reference by Package Product List Quick Reference by Function/Application Small Signal Transistor Transistor for Array Power Transistor Bipolar Transistor MOS,FET Field Effect Transistor


    Original     		PDF X13769XJ2V0CD00 O-126) MP-25 O-220) MP-40 MP-45 MP-45F O-220 MP-80 MP-10 transistor POWER MOS FET 2sj 2sk transistor 2sk 2SK type n channel fet array Low frequency power transistor transistor mp40 TRANSISTOR P 3 high hfe transistor list

    Kt 0936

    Abstract: 2N3819 NATIONAL SEMICONDUCTOR M/Kt 0936 to92 fet p channel National 2N3819 2N3819 MMBF5484 "TO-72 package" ML252 MMBFJ305
    Text: mi-, vni-, urn- Amplifiers 3 3 1 ° - Z TO-52 N Channel • b BVqss Device - ‘ ‘ V) Min ‘ : R elYfk ' <T' Re(Yos) NF Ciss Crss S’* *• :k ^ (jim ho>@ f (d B )@ R g = 1 k -‘f * ' Package (pFj (PF) - 4 0 C '§ M a r .Max (V). ("A ) Min (MHz) Max (MHz*


    OCR Scan     		PDF 2N3819 T0-92 2N44-16 PW4416 MMBF441S: O-236* 2N5Z45^ Kt 0936 2N3819 NATIONAL SEMICONDUCTOR M/Kt 0936 to92 fet p channel National 2N3819 2N3819 MMBF5484 "TO-72 package" ML252 MMBFJ305

    Untitled

    Abstract: No abstract text available
    Text: S A MS U N G SEMICONDUCTOR 14E INC D I 71b4].45 GOG7004 T | SI N-CHANNEL JUNCTION FET KSK123 T-29-25 AF IMPEDANCE CONVERTER SOT-23 • BUILHN DIODE BETWEEN G AND S • LOW NV ABSOLUTE MAXIMUM RATINGS Ta = 25°C Characteristic Drain Source Voltage Drain Gate Voltage


    OCR Scan     		PDF GOG7004 KSK123 T-29-25 OT-23

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


    OCR Scan     		PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG S EM ICO NDUC TOR INC 14E D I 711*4142 OOOl. Tl? B | KSK65 Si N-CHANNEL JUNCTION FET T-29-25 AF IMPEDANCE CONVERTER • BuiIMn Diode Between G and S • Low NV ABSOLUTE MAXIMUM RATINGS T8=25°C Characteristic Drain-Source Voltage Gate-Drain Voltage


    OCR Scan     		PDF KSK65 T-29-25

    8SS138

    Abstract: GFP80N03 SFB50N03 BS170 bss138 2N7002 60V SOT-23 Fet irfz44n
    Text: MOSFETS - N CHANNEL BY VOLTAGE 20V Drain-Source Rated Trench G e n F e t Qg [nC l, Typ. Ros(on) [m n l Id Vgs = 2.5V Vgs = 4.5V [V] [A] Max Max V d s = 10V Vgs Vgs 4.5V 10V Config Package Page Dual SOT-363 - TN0205AD*'1 20 0.25 2500 2000 0.35 TN0200T


    OCR Scan     		PDF TN0205AD* TN0200T OT-363 OT-23 BSH105 GF6968A GF6968E GF9926 GF4126 8SS138 GFP80N03 SFB50N03 BS170 bss138 2N7002 60V SOT-23 Fet irfz44n