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    VDS25 Search Results

    VDS25 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    SN65LVDS250DBT Texas Instruments 2.0 Gbps 4x4 Crosspoint Switch 38-TSSOP -40 to 85 Visit Texas Instruments Buy
    SN65LVDS250DBTR Texas Instruments 2.0 Gbps 4x4 Crosspoint Switch 38-TSSOP -40 to 85 Visit Texas Instruments Buy
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    VDS25 Price and Stock

    ECS International Inc ECS-LVDS25-2000-A

    XTAL OSC XO 200.0000MHZ LVDS SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ECS-LVDS25-2000-A Reel 6,500 500
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    • 1000 $6.87672
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    ECS-LVDS25-2000-A Cut Tape 123 1
    • 1 $10
    • 10 $10
    • 100 $10
    • 1000 $10
    • 10000 $10
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    Mouser Electronics ECS-LVDS25-2000-A 510
    • 1 $9.61
    • 10 $9.61
    • 100 $9.61
    • 1000 $6.87
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    Master Electronics ECS-LVDS25-2000-A
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    • 1000 $9.93
    • 10000 $9.93
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    ECS International Inc ECS-LVDS25-1000-A

    XTAL OSC XO 100.0000MHZ LVDS SMD
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    DigiKey ECS-LVDS25-1000-A Reel 1,000 500
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    • 1000 $3.55974
    • 10000 $3.34562
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    ECS-LVDS25-1000-A Cut Tape 794 1
    • 1 $6.98
    • 10 $6.583
    • 100 $6.1837
    • 1000 $6.1837
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    Mouser Electronics ECS-LVDS25-1000-A 358
    • 1 $8.68
    • 10 $8.68
    • 100 $8.68
    • 1000 $4.14
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    Master Electronics ECS-LVDS25-1000-A
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    • 1000 $4.9
    • 10000 $4.9
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    ECS International Inc ECS-LVDS25-1562.5-A

    XTAL OSC XO 156.2500MHZ LVDS SMD
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    DigiKey ECS-LVDS25-1562.5-A Cut Tape 500 1
    • 1 $7.64
    • 10 $7.191
    • 100 $6.7418
    • 1000 $6.7418
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    ECS-LVDS25-1562.5-A Digi-Reel 1
    • 1 $7.64
    • 10 $7.191
    • 100 $6.7418
    • 1000 $6.7418
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    ECS-LVDS25-1562.5-A Reel 500
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    Mouser Electronics ECS-LVDS25-1562.5-A
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    Master Electronics ECS-LVDS25-1562.5-A
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    Texas Instruments SN65LVDS250DBT

    IC CROSSPOINT SW 1 X 4:4 38TSSOP
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    DigiKey SN65LVDS250DBT Tube 52 1
    • 1 $17.01
    • 10 $15.631
    • 100 $13.2017
    • 1000 $11.74382
    • 10000 $11.74382
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    Mouser Electronics SN65LVDS250DBT 143
    • 1 $17.01
    • 10 $14.99
    • 100 $13.2
    • 1000 $11.74
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    Rochester Electronics SN65LVDS250DBT 555 1
    • 1 $11.69
    • 10 $11.69
    • 100 $10.99
    • 1000 $9.94
    • 10000 $9.94
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    Texas Instruments SN65LVDS250EVM

    MOD EVALUATION FOR SN65LVDS250
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SN65LVDS250EVM Bulk 1
    • 1 $51.74
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    • 100 $51.74
    • 1000 $51.74
    • 10000 $51.74
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    Mouser Electronics SN65LVDS250EVM
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    VDS25 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    YTFP451

    Abstract: No abstract text available
    Text: TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ir - YTFP451 MOSI INDUSTRIAL APPLICATIONS Unit in am HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR 1&9MAX. 0aa±Q8 DRIVE APPLICATIONS. dl FEATURES:


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    PDF YTFP451 500nA 250uA Ta-25 -55M50 VDS-25V, ID-16A VGS-10V IDR-13A YTFP451

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.904B International IOR Rectifier IR L Z 2 4 S /L HEXFET Power MOSFET • • • • • Advanced Process Technology Surface Mount IRLZ24S Low-profile through-hole (IRLZ24L) 175°C Operating Temperature Fast Switching Description Third Generation HEXFETs from International Rectifier


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    PDF IRLZ24S) IRLZ24L)

    Untitled

    Abstract: No abstract text available
    Text: INTERNATIONAL RECTIFIER bSE D 4Û 5 S 4S 2 O O l b E C n 4TT • INR Bulletin E2793 International [îôrIRectifier IRFK2P350,IRFK2F350 Isolated Base Power HEX-pak Assembly - Half Bridge Configuration ■ • • • High Current Capability. UL recognised E78996.


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    PDF E2793 IRFK2P350 IRFK2F350 E78996.

    APT801R2cN

    Abstract: C 632 S1M
    Text: A D VA NC ED o POUER TECHNOLOGY b lE D • □ E 5 7 cì D Eì Q0GQ777 215 HAVP Advanced P o w er Tec h n o lo g y D sili O S POWER MOS IV APT801R2CN APT751R2CN APT801R4CN APT751R4CN 800V 750V 800V 750V 7.0A 7.0A 6.5A 6.5A 1.20Q 1.20Q. 1.40Ì2 1.40Q


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    PDF Q0GQ777 APT801R2CN APT751R2CN APT801R4CN APT751R4CN 751R2CN 801R2CN 751R4GCN 801R4CN g-100 C 632 S1M

    Untitled

    Abstract: No abstract text available
    Text: Æ iitro n PRODUCT D E V I CE S .I N C. l177 BLUE H E R O N B L V D . • RIVIERA BEACH. FLORIDA 33404 TEL: 407 048-4311 • TLX: 51-3435 « F A X : N-CHANNEL ENHANCEMENT MOS FET 1000V, 4 . 4 A , 4 . 0 Q (407) 863-594G ABSOLUTE MAXIMUM RATINGS PARAMETER


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    PDF 863-594G 63bfibD2

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED POIilER T EC H N O L OGY b lE •K W/<m w POWER MOS IV D ■ OS ST TO T 000076«} T37 M A V P A d v a n ced po w er Te c h n o l o g y APT1004RCN 1000V 3.6A APT904RCN 900V 3.6A APT1004R2CN 1000V 3.3A APT904R2CN 900V 3.3A 4.00Q 4.00Q 4.20Q 4.20Q


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    PDF APT1004RCN APT904RCN APT1004R2CN APT904R2CN 904RCN 1004RCN 904R2CN 1004R2CN APT1004R/1 004R2GN

    nK2647

    Abstract: T151 2sk2647 N CH FET 600V 9A
    Text: S P E C I F I C A T I O N DEVICE NAME TYPE NAME P o w e r M O S F E T 2 SK 2 6 4 T - 0 1M R SPEC. No. Fuj i E l e c t r i c . Co., Ltd. This Specification is subject to change without notice. OATE DRAWN NAME APPROVED Fuji Electric C o jid CHECKED 12 Y 025T-R-004a


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    PDF 0257-R-004a 2SK2647-0 T0-22QF EaTl30 nK2647 T151 2sk2647 N CH FET 600V 9A

    JJ SMD diode

    Abstract: AN-994 IRL530S SMD-220 smd diode marking mp smd diode JF
    Text: PD-9.909 International Rectifier IRL530S HEXFET P o w e r M O S F E T • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at V g s =4V & 5V 175°C Operating Temperature


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    PDF IRL530S SMD-220 JJ SMD diode AN-994 IRL530S smd diode marking mp smd diode JF

    72Z4

    Abstract: 8N18L RFP8N18L RFP8N20L RFP mosfets
    Text: h A R f r is R FM 8 N 18L /2 0 L R FP8 N 18 L /2 0 L N -Channel Logic Level Power Field-Effect Transistors L2 FET A u g u s t 1991 Package Features T O -20 4 A A BOTTOM VIEW • 8A, 1 8 0V and 2 0 0 V • rD S (0 N ) = ° - 5 a • Design O p tim ized for 5V G ate Drives


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-9.633A International HfH Rectifier IRLR110 IRLU110 HEXFET Power M OSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRLR110 Straight Lead (IRLU110) Available in Tape & Reel Logic-Level Gate Drive RDS<on) Specified at V gs =4V & 5V


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    PDF IRLR110 IRLU110 IRLR110) IRLU110) VDS25

    Untitled

    Abstract: No abstract text available
    Text: International ÜÔSSMSS 001 Sb7 b Ö40 • INR i“R Rectifier PD-9.525D IRFR220 IRFU220 HEXFET Power M O SFET bSE D _ INTERNATIONAL R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR220 Straight Lead (IRFU220) Available in Tape & Reel


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    PDF IRFR220 IRFU220 IRFR220) IRFU220) VDS25

    Untitled

    Abstract: No abstract text available
    Text: Contran ,nc product W.ÌÌ3Ì« N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER 6 0 0 V, UNITS SYMBOL Drain-source Volt. l Dra in-Gate Vo 1tage (R g s =1.0M o ) (1) Gate-Source Voltage Con t inuous Drain Current Continuous (Tc = 25*C) Drain Current Pulsed(3)


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    PDF A3bflb02 MIL-S-19500 SDF17N60

    Untitled

    Abstract: No abstract text available
    Text: SOLITRON DEVICES INC 48E D • CATALOm PRODUCT fl3bflb02 00G353b SSO « S O D _ J fO lltr a n devices. inc. N-CHANNEL ENHANCEMENT MOS FET 100V, 25A, o. ion 5DF140 SDF140 SDF140 JAA JAB JDA FEATURES • • • • • • • • RUGGED PACKAGE


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    PDF fl3bflb02 00G353b 5DF140 SDF140 MIL-S-19500 IF-25A. IF-25A 300nS.

    IC A244

    Abstract: 2SK950 schematic UPS ica
    Text: 2SK950 FUJI POW ER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-I S E R IE S lOutline Drawings • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage ■Applications Gate Drain Source • Switching regulators


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    PDF 2SK950 O-22QAB SC-46 Tc-25Â IC A244 2SK950 schematic UPS ica

    2SK2469-01MR

    Abstract: No abstract text available
    Text: '95 No. 11 F U J I V4># iw o M s iT it e u e *,<W*|; 4^ ^ y |i< iu v s <|#i t i l *±W * imma.b- _ ±/\7-M0SFET FAP-n 5 1 3 0 0 V /5 A 2SK2469-01MR N“L'V ^ ; u x > /\> X ^ > h®/N°7-M0SFET mm N-channel enhancement mode POWER MOSFET


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    PDF 300V/5A/1 2SK2469-01MR ls30EJ 2SK2469-01MR

    2n2709

    Abstract: C621 2N4411 c643 OC44 400M BSV55AP BSV55P T072 GM300
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    PDF THP172 TIS11 TIX690 Pc-50mW; BVCBO-50V BVGSS-30V Yfs-800umhos 500mW; TIX881 TIX882 2n2709 C621 2N4411 c643 OC44 400M BSV55AP BSV55P T072 GM300

    Untitled

    Abstract: No abstract text available
    Text: 4055452 International S Rectifier OOlSbMO t I S • PD-9.701A IRFR014 IRFU014 HEXFET Power M O S FE T • • • • • • • INR Dynamic dv/dt Rating Surface Mount IRFR014 Straight Lead (IRFU014) Available in Tape & Reel Fast Switching Ease of Paralleling


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    PDF IRFR014) IRFU014) IRFR014 IRFU014 T0-251AA VDS25

    zvp3310a

    Abstract: No abstract text available
    Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -M A R C H 94 FEATURES * 100 Volt VDS # Rds , « , - » « ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT VDS -100 V Continuous Drain Current at Tam^=25°C •d -140 mA Pulsed Drain Current ■dm


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    PDF ds--80V, Vds--25 VGS--10V -150mA -150mA ZVP3310A zvp3310a

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA DISCRETE/OPTO 45E TCH7550 D QOlTTflM ? T O S H IB A F IE L D E F F E C T T R A N S IS T O R S I L I C O N N C H A N N E L M O S T Y P E (ir - ITOS*4 YTFP451 M O S I) INDUSTRIAL APPLICATIONS Unit ln mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.


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    PDF TCH7550 YTFP451 -450V 250ijA VDS-25V, VGS-10V Ta-25Â IDR-13A 00A/us

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA DISCRETE/OPTO 4SE D TOSHIBA FIELD EFFEC T TRANSISTOR SILICON N C H A N N EL MOS T Y P E (tt - • CJ D C1 7 2 S G □□ITTÔÔ 4 «TO S M - YTFP453 MOSI) 'T 3A - ' l INDUSTRIAL APPLICATIONS Unit in Bin HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.


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    PDF YTFP453 IDSS-250u VDS-450V I0-25O H360V VGS-10V Ta-25Â IDR-12A dlQR/dt-100A/us

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA {DIS CR ET E/OPT O} 9097250 ^ o ìh lb n T O S H IB A TÏ D eT J D IS C R E T E /O P T O SEMICONDUCTOR ì 99D O^ESO 001L7t,3 ñ 16763 D -3=1-13 TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 792 SILICON N CHANNEL MOS TYPE (7 T -M 0S) TECHNICAL DATA INDUSTRIAL APPLICATIONS


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    PDF 001L7t 100nA IDSS-300/ S-900V

    YTFP452

    Abstract: No abstract text available
    Text: TOSHIBA DI SC RETE/OPTO 45E D TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (ir - • TOTTBSQ OOlTTÛb □ ■TOSH Y T r P 1 - rt YTFP452 MOSI) T 1IPs ~\ 3 INDUSTRIAL APPLICATIONS Unit ln nm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.


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    PDF 0017Tflb YTFP452 IDSS-250uA VDS-500V Ijj-250uA Te-25Â RGSm20kfi) Vddn210V VGS-10V Ta-25< YTFP452

    Untitled

    Abstract: No abstract text available
    Text: SOLITRON DEVICES INC \ SFNF065D 70 DË^Û3t,ôbDE □ □□nflfc, 2 SWITCH MOS PACKAGE TO-39 POWER MOS MAXIMUM RATINGS VDS *0 IDM VGS PD XL ^J oper T . stg UNITS PARAMETER SYMBOL Voltage, Drain to Source 50 V Drain Current, Continuous @ Tc=25°C 4.0 A


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    PDF SFNF065D 5M6-24UNF-2A P06fTKM eA03AT

    transistor k79

    Abstract: 2sk793
    Text: TOSHIBA {DISCRETE/OPTO} 9097250 T O S H IB A Ï Ï “ ^ E ~ | , 0 1 7 5 5 0 001I.7U, 3 99D D I S C R E T E /O PTO SEMICONDUCTOR 16766 D T -3 9 -1 3 TOSHIBA FIELD EFFECT TRANSISTOR 2S K79 3 TECHNICAL DATA SILICON N CHANNEL MOS TYPE (ff-MOS) INDUSTRIAL APPLICATIONS


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    PDF il00nA 2SK793 transistor k79 2sk793