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    T-29-25

    Abstract: fet af JCSK123 KSK123 lovos S16-O
    Text: SAMSUNG SEMICONDUCTOR 14E INC D I 71b4].45 GOG7004 T | SI N-CHANNEL JUNCTION FET KSK123 T-29-25 AF IMPEDANCE CONVERTER SOT-23 • BUILT4N DIODE BETWEEN G AND S • LOW NV ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Drain Source Voltage Drain Gate Voltage


    OCR Scan     		PDF KSK123 71bMm5 G0G7G04 T-29-25 S0T-23 JCSK123 T-29-25 fet af JCSK123 KSK123 lovos S16-O

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    Abstract: No abstract text available
    Text: S A MS U N G SEMICONDUCTOR 14E INC D I 71b4].45 GOG7004 T | SI N-CHANNEL JUNCTION FET KSK123 T-29-25 AF IMPEDANCE CONVERTER SOT-23 • BUILHN DIODE BETWEEN G AND S • LOW NV ABSOLUTE MAXIMUM RATINGS Ta = 25°C Characteristic Drain Source Voltage Drain Gate Voltage


    OCR Scan     		PDF GOG7004 KSK123 T-29-25 OT-23