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    U2T201 Search Results

    U2T201 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    U2T201 Microsemi (U2T205) Power Darlingtons Scan PDF
    U2T201 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    U2T201 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    U2T201 Unitrode International Semiconductor Data Book 1981 Scan PDF

    U2T201 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    U2T101

    Abstract: U2T105 U2T201 U2T205
    Text: i, One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. POWER DARLINGTONS U2T101 U2T105 U2T201 U2T205 10 Amp, 150V, Planar NPN FEATURES • High Current Gain: up to 2000 min @ lc = 5A • Low Saturation Voltage: as low as 1.5V max @ lc = 5A


    Original     		PDF U2T101 U2T105 U2T201 U2T205 U2T101 100-C U2T105 U2T201 U2T205

    MJE1100

    Abstract: MJ4001 SDN201 BD263B Motorola transistors MJE1102
    Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer Ic Max V BR CEO (V) W Darlington Transistors, NPN (Cont'd) . . . .5 . . . .10 . . . .15 . . . .20 . . . .25 . . . .30 . . . .35 . . . . 40 . . . .45 . . . .50 . . . .55 . . . . 60 . . .65 . . . .70


    Original     		PDF MJ4200 MJ4000 MJD6039 MJD6039-1 2SD1520 2SD1414 2SD1933 MJE1100 MJ4001 SDN201 BD263B Motorola transistors MJE1102

    b0333

    Abstract: box53b 044E3 BOW93B b0647 BOX67A BOT63A BOT65A 2N605B B0699
    Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ic Max (A) PD Max (W) fT hFE Min Max (Hz) ICBO Max (A) tr Max tf Max (s) (s) 300n 500n 500n 1.2u 175 A 175 J 150 J 150 J 1.5u B.5u 300n 300n 300n 300n 5.0u 800n BOOn BOOn BOOn 150 J 175 J


    Original     		PDF U2T201 2N6352 2S01169 2S01315 SGS121 TIP121 TIP621 MJE1102 b0333 box53b 044E3 BOW93B b0647 BOX67A BOT63A BOT65A 2N605B B0699

    B0679

    Abstract: 2N6852 SOM3305 solitron transistors U2T101 2N685 DIODE 6AA BSS52 B0879
    Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ic Max (A) PD Max (W) fT hFE Min Max (Hz) ICBO Max (A) t, Max (8) tf Max (8) TOper Max (OC) Package Style NPN Darlington Transistors, (Co nt' d) 5 10 MMST•A28 MPS·A28 MPS·A28 BST52


    Original     		PDF BST52 BSP52 MPSA28 2S01698 2S01697 2S01699 BC879 B0679 2N6852 SOM3305 solitron transistors U2T101 2N685 DIODE 6AA BSS52 B0879

    TRANSISTOR u2t101

    Abstract: U2T201 2T201 U2T105 2T205 U2T101 U2T205 R82E RG1E
    Text: POWER DARLINGTONS U2T101 U2T105 U2T201 U2T205 10 Amp, 150V, Planar NPN o CO LLECT O R FEATURES • H igh C urrent Gain: up to 2000 m in @ lc = 5A • Low S a tu ra tion Voltage: as low as 1.5V max @ l c = 5A • High Voltage: up to 150V m in VCER • M o n o lith ic Design In co rp o ra tin g M u ltip le -E m itte r T e chniques


    OCR Scan     		PDF U2T101 U2T105 U2T201 U2T205 U2T105 U2T101 -U2T105 U2T201 TRANSISTOR u2t101 2T201 2T205 U2T205 R82E RG1E

    74114

    Abstract: TRANSISTOR A64 U2T205 U2T101 TRANSISTOR u2t101 U2T201 U2T105 F018
    Text: U2T101 U2T105 U2T201 U2T205 POWER DARLINGTONS 10 Amp, 150V, Planar NPN FEATURES DESCRIPTION • • • • • U nitrode N PN D arlingtons co n s is t o f a two tra n sisto r c irc u it on a s in g le m o n olith ic plan ar ch ip. H igh Current Gain: up to 2000 m in @ tc = 5A


    OCR Scan     		PDF U2T101 U2T105 U2T201 U2T205 /-33-H U2T105 20-C/W 74114 TRANSISTOR A64 U2T205 TRANSISTOR u2t101 F018

    U2T105

    Abstract: u2t205
    Text: U2T101 U2T105 U2T201 U2T205 POWER DARLINGTONS 10 Amp, 150V, Planar NPN o FEATURES • H igh C urrent Gain: up to 2000 m in @ lc = 5A • Low S atu ra tion Voltage: as low as 1.5V max @ lc =r 5A • H igh Voltage; up to 150V m in VCER • M o n o lith ic Design In co rp o ra tin g M u ltip le -E m itte r Techniques


    OCR Scan     		PDF U2T101 U2T105 U2T201 U2T205 U2T101 u2t205

    U2T205

    Abstract: No abstract text available
    Text: MICROSEMI CORP/ l i lATERTOUN SGE ] ^347^3 DD1BSD3 . POWER DÂR LI NGt ON S 327 M UNIT U2T10l U2T105 U2T201 U2T205 10 Amp, 150V, Planar NPN O FE A TU R E S • • • • • DESCRIPTION High Current Gain: up to 2QOO min @ ic = 5A Low Saturation Voltage: as low as 1.5V max @ lc = 5A


    OCR Scan     		PDF U2T10l U2T105 U2T201 U2T205 U2T101 U2T101& U2T201& U2T205

    UFN540

    Abstract: UFN833 UPT613 UFNF130 UFN451 U2T105 U2T305 TQ-66 ufn432 UFN450
    Text: N-CHANNEL POWER MOSFETS Vm ft»* «» Dram On-State Source •Resist­ ance Voltage Volts (Shuns) PRODUCT SELECTION GUIDE Is Continuous Drain Current :. . 1°« . Pulsed: . ÉwMiv Current Part ■ ‘lifcrtr: Numbers j : Càsja; (Amps) : Vos Drain. On-State


    OCR Scan     		PDF U2TA506 U2TA508 U2TA510 861-6S40 UFN540 UFN833 UPT613 UFNF130 UFN451 U2T105 U2T305 TQ-66 ufn432 UFN450

    triacs bt 804 600v

    Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
    Text: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa­ tion for maintaining an unusually high level of quality, perfor­


    OCR Scan     		PDF Comp27-1296 triacs bt 804 600v UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711