40N60A4
Abstract: HGTG40N60A4 HGT1Y40N60A4D LD26 TA49347
Text: HGTG40N60A4 TM Data Sheet April 2000 File Number 600V, SMPS Series N-Channel IGBT Features The HGTG40N60A4 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input impedance
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HGTG40N60A4
HGTG40N60A4
150oC.
100kHz
200kHz
40N60A4
HGT1Y40N60A4D
LD26
TA49347
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40N60A4
Abstract: HGTG40N60A4 HGT1Y40N60A4D LD26 TA49347
Text: HGTG40N60A4 Data Sheet December 2001 600V, SMPS Series N-Channel IGBT Features The HGTG40N60A4 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a
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HGTG40N60A4
HGTG40N60A4
150oC.
100kHz
200kHz
40N60A4
HGT1Y40N60A4D
LD26
TA49347
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40N60A4D
Abstract: TA49347 40N60A4 MOSFET 40A 600V HGT5A40N60A4D LD26
Text: HGT5A40N60A4D Data Sheet February 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT5A40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input
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HGT5A40N60A4D
HGT5A40N60A4D
150oC.
TA49347.
100kHz
200kHz
40N60A4D
TA49347
40N60A4
MOSFET 40A 600V
LD26
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40N60A4
Abstract: 40N60A4D MOSFET 40A 600V HGT5A40N60A4D LD26 TA49347 40N60A TO-247ST
Text: HGT5A40N60A4D Data Sheet February 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT5A40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input
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HGT5A40N60A4D
HGT5A40N60A4D
150oC.
TA49347.
100kHz
200kHz
40N60A4
40N60A4D
MOSFET 40A 600V
LD26
TA49347
40N60A
TO-247ST
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HGTG40N60A4
Abstract: IGBTs 40N60A4 HGT1Y40N60A4D LD26 TA49347
Text: HGTG40N60A4 Data Sheet August 2003 File Number 600V, SMPS Series N-Channel IGBT Features The HGTG40N60A4 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input impedance
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HGTG40N60A4
HGTG40N60A4
150oC.
100kHz
200kHz
IGBTs
40N60A4
HGT1Y40N60A4D
LD26
TA49347
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65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
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1-888-INTERSIL
MS-012AA
MO-153AA
RF1K49090
RF1K49093
RF1K49092
ITF87056DQT
ITF87072DK8T
ITF87008DQT
RF1K49223
65e9 transistor
transistor 75307D
Transistor 65e8
SD MOSFET DRIVE DATASHEET 4468 8 PIN
G40N60
RHR15120 equivalent
10n120bnd
76107d
transistor 76121D
emerson three phase dc motor driver service note
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40N60A4D
Abstract: 40N60A4 HGTG*N60A4D 40N60A HGT1Y40N60A4D MOSFET 40A 600V HGT5A40N60A4D LD26 TA49347
Text: HGT5A40N60A4D / HGT1Y40N60A4D Data Sheet May 2002 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT5A40N60A4D and HGT1Y40N60A4D are MOS gated high voltage switching devices combining the best features of a MOSFET and a bipolar transistor. These
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HGT5A40N60A4D
HGT1Y40N60A4D
HGT1Y40N60A4D
150oC.
TA49347.
100kHz
200kHz
40N60A4D
40N60A4
HGTG*N60A4D
40N60A
MOSFET 40A 600V
LD26
TA49347
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40N60A4
Abstract: HGTG40N60A4 MOSFET 40A 600V TA49347 HGT1Y40N60A4D LD26
Text: HGTG40N60A4 Data Sheet April 2000 File Number 600V, SMPS Series N-Channel IGBT Features The HGTG40N60A4 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input impedance
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HGTG40N60A4
HGTG40N60A4
150oC.
100kHz
200kHz
40N60A4
MOSFET 40A 600V
TA49347
HGT1Y40N60A4D
LD26
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40N60A4D
Abstract: DIODE 809 200A 40N60A4 Capacitor 400v 80A HGT5A40N60A4D TA49347
Text: HGT5A40N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT5A40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input
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HGT5A40N60A4D
HGT5A40N60A4D
150oC.
TA49347.
40N60A4D
DIODE 809 200A
40N60A4
Capacitor 400v 80A
TA49347
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