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    qe R 521 smd

    Abstract: No abstract text available
    Text: P re lim in a ry data <> IXGH20N60B IXGH20N60BS HiPerFAST IGBT Symbol Test Conditions V CES Tj = 25°C to 150°C Td = 25°C to 150°C; RGE = 1 Mi2 vC0R vGES •« Tc = 25°C Tc = 90°C Tc = 25°C, 1 ms U ■c. SSOA RBSOA p c 600 600 VGE= 15 V, TVJ = 125°C, RG= 22 O


    OCR Scan     		PDF IXGH20N60B IXGH20N60BS O-247SMD* O-247 qe R 521 smd

    qe R 521 smd

    Abstract: smd mk ixgh20n60b
    Text: □ IXYS P re lim in a ry data HIPerFAST IGBT Symbol Test Conditions V v CGR T j = 25°C to 150°C T j = 25°C to 150°C; RGE = 1 v v GEM Continuous Transient ^C25 ^C90 ' cm SSOA RBSOA Pc IXGH20N60B IXGH20N60BS « Maximum Ratings 600 600 V V ±20 ±30


    OCR Scan     		PDF IXGH20N60B IXGH20N60BS O-247 qe R 521 smd smd mk

    IXGH20N60B

    Abstract: No abstract text available
    Text: HiPerFAST IGBT IXGH20N60B IXGH20N60BS ÇC VCES ^C25 v CE sat typ tfi = = = = 600 V 40 A 1.7 V 100 ns Preliminary data Symbol Test Conditions v CES Tj = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RGE = 1 M fi 600 V v' GES Continuous ±20 V v GEM Transient


    OCR Scan     		PDF IXGH20N60B IXGH20N60BS O-247