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    Untitled

    Abstract: No abstract text available
    Text: • 4 M M 7 5 Ô 4 G D O T b ñ ? OTO ■ H P A HEWLETT-PACKARD/ CMPNTS blE D m HEW LETT PACKARD Small Signal RF PIN Diode Chips for Hybrid Integrated Circuits Technical Data HPND-0001 HPND-0002 HPND-0003 Features • Thermocompression/ Thermosonically Bondable


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    HPND-0001 HPND-0002 HPND-0003 HPND000X PDF

    Untitled

    Abstract: No abstract text available
    Text: Wljm SMALL SIGNAL RF PIN DIODE CHIPS FOR HYBRID INTEGRATED CIRCUITS HEW LETT PACKARD wLEM HPND-0001 HPND-0002 HPND-0003 T E C H N IC A L DATA M ARCH 1988 Features THERMOCOMPRESSION/THERMOSONICALLY BON DAB LE IDEAL FOR HYBRID INTEGRATED CIRCUITS GOLD METALLIZATION


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    HPND-0001 HPND-0002 HPND-0003 PDF

    marking 722

    Abstract: No abstract text available
    Text: CS Vishay Thin Film Ceramic Sandwich, Single-In-Line Resistor Networks Low profile 0.20 Custom FEATURES • Gold-to-gold terminations. External leads are attached directly to gold pads on the ceramic substrate by thermocompression bonding (no internal solder)


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    03-May-01 marking 722 PDF

    HUGHES mcw 550

    Abstract: hughes welder mcw-550 hughes capacitor discharge welder VTA90 discharge capacitor welding welder hughes mcw 550 HUGHES tungsten electrodes MAXY90
    Text: Beam Lead Device Bonding to Soft Substrates Application Note 993 Introduction The hard gold surface on standard PC boards combined with soft substrate materials makes it almost impossible to successfully bond beam lead devices onto the boards with normally recommended thermocompression


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    VTA90 MAXY90 MCW552 MA09-11 MA-02-25 WE-2231 5954-2227E HUGHES mcw 550 hughes welder mcw-550 hughes capacitor discharge welder VTA90 discharge capacitor welding welder hughes mcw 550 HUGHES tungsten electrodes MAXY90 PDF

    integrated circuits equivalents list

    Abstract: digital phase shifters HPND-0002 hydrofluoric acid HPND0002 HSMP3810 5965-9143E eutectic
    Text: HPND-0002 Small Signal RF PIN Diode Chips for Hybrid Integrated Circuits Data Sheet Description Features These PIN/NIP diode chips are specifically designed for hybrid applications requiring thermosonic or thermocompression bonding techniques. The top metallization


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    HPND-0002 5965-9143E AV01-0640EN integrated circuits equivalents list digital phase shifters HPND-0002 hydrofluoric acid HPND0002 HSMP3810 5965-9143E eutectic PDF

    Untitled

    Abstract: No abstract text available
    Text: What HEW LETT* miltm PACKARD Schottky Barrier Chips for Hybrid Integrated Circuits Technical Data HSMS-0005/06 HSMS-8002/12 Features Description/Applications • Thermocompression/ Thermosonically Bondable • Gold Metallization • Silicon Nitride Passivation


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    HSMS-0005/06 HSMS-8002/12 PDF

    sol 4011 be

    Abstract: No abstract text available
    Text: A fa Preliminary Specification High Reliability Semiconductor Attenuator PIN Diode Chip_ MA47406 M aann A M P co m pany V1.00 Features • • • • • Package Outline Glass Passivation Thermocompression bondable Thermosonically bondable


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    MA47406 MA47406-132 PSS-01-608 sol 4011 be PDF

    Untitled

    Abstract: No abstract text available
    Text: W ß%H EW L E T T 1“KM PA CK A R D Small Signal RF PIN Diode Chips for Hybrid Integrated Circuits Technical Data HPND-0001 HPND-0002 Features Description • Thermocompression/ ThermosonicaUy Bondable These PIN/NIP diode chips are specifically designed for hybrid


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    HPND-0001 HPND-0002 HPND-000X PDF

    HPND0003

    Abstract: HPND-0003
    Text: W fipi H E W LE T T mL'HM P A C K A R D Small Signal RF PIN Diode Chips for Hybrid Integrated Circuits Technical Data HPND-0001 HPND-0002 HPND-0003 F eatures • Thermocompression/ Thermosonically Bondable • Ideal for Hybrid Integrated Circuits • Gold Metallization


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    HPND-0001 HPND-0002 HPND-0003 HPND000X HPND0003 HPND-0003 PDF

    Circuit integrated 8002

    Abstract: HSMS0005 HSMS2850 HSMS8002 Hewlett-Packard microwave pin diode sn 8002
    Text: Schottky Barrier Chips for Hybrid Integrated Circuits Technical Data HSMS-0005/06 HSMS-8002/12 Features Description/Applications • Thermocompression/ Thermosonically Bondable • Gold Metallization • Silicon Nitride Passivation • Uniform Electrical Characteristics


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    HSMS-0005/06 HSMS-8002/12 Circuit integrated 8002 HSMS0005 HSMS2850 HSMS8002 Hewlett-Packard microwave pin diode sn 8002 PDF

    tantalum nitride

    Abstract: No abstract text available
    Text: Vishay Thin Film Sandwich, 50 Mil Pitch, Dual-In-Line Resistor Networks FEATURES • Gold-to-gold terminations. External leads are attached directly to gold pads on the ceramic substrate by thermocompression bonding no internal solder . • Tighter tolerances than molded standards.


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    27-Apr-01 tantalum nitride PDF

    HSMS0001

    Abstract: HSMS-0002 HSMS0003 5082-0009 HSMS-0003 HSMS0002 HSMS-0012 5082-0097 HSMS-0001 5082 schottky
    Text: Whpì LETT wLUMHEW PACKARD Schottky Barrier Chips for Hybrid Integrated Circuits Technical Data 5082-0009, 5082-0013, 5082-0023, 5082-0097, HSMS-0001, HSMS-0011, HSMS-0002, HSMS-0012, HSMS-0003, HSMS-0013 Features • Thermocompression/ Thermosonically Bondable


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    HSMS-0001, HSMS-0011, HSMS-0002, HSMS-0012, HSMS-0003, HSMS-0013 HSCH-3206* HSMS0001 HSMS-0002 HSMS0003 5082-0009 HSMS-0003 HSMS0002 HSMS-0012 5082-0097 HSMS-0001 5082 schottky PDF

    Untitled

    Abstract: No abstract text available
    Text: CSD Vishay Thin Film Ceramic Sandwich, Dual-In-Line, Resistor Network Custom FEATURES • Gold-to-gold terminations. External leads are attached directly to gold pads on the ceramic substrate by thermocompression bonding (no internal solder). • Monolithic construction


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    27-Apr-01 PDF

    Untitled

    Abstract: No abstract text available
    Text: Who mLftM 1 HEW LETT PACKARD Zero Bias Schottky Diode Chip for Hybrid Integrated Circuits Technical Data HSMS-0005 Features • Thermocompression/ Thermosonically Bondable • Gold Metallization • Silicon Nitride Passivation • High Detection Sensitivity


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    HSMS-0005 10ver 5963-0918E 5965-1236E GD14362 PDF

    hydrofluoric acid

    Abstract: HPND0001 HPND-0001 HPND-0002 thermocompression
    Text: Small Signal RF PIN Diode Chips for Hybrid Integrated Circuits Technical Data HPND-0001 HPND-0002 Features Description • Thermocompression/ Thermosonically Bondable These PIN/NIP diode chips are specifically designed for hybrid applications requiring thermosonic or thermocompression


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    HPND-0001 HPND-0002 HPND-000X hydrofluoric acid HPND0001 HPND-0001 HPND-0002 thermocompression PDF

    Untitled

    Abstract: No abstract text available
    Text: Schottky Barrier Chips for Hybrid Integrated Circuits Technical Data HSMS-0005/06 HSMS-8002/12 Features Description/Applications • Thermocompression/ Thermosonically Bondable • Gold Metallization • Silicon Nitride Passivation • Uniform Electrical Characteristics


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    HSMS-0005/06 HSMS-8002/12 5965-8855E PDF

    hydrofluoric acid

    Abstract: thermocompression HPND0001 HPND-0001 HPND-0002
    Text: Small Signal RF PIN Diode Chips for Hybrid Integrated Circuits Technical Data HPND-0001 HPND-0002 Features Description • Thermocompression/ Thermosonically Bondable These PIN/NIP diode chips are specifically designed for hybrid applications requiring thermosonic or thermocompression


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    HPND-0001 HPND-0002 HPND-000X 5965-9143E hydrofluoric acid thermocompression HPND0001 HPND-0001 HPND-0002 PDF

    CH4730

    Abstract: 1N4728 1N4764 CH4728 CH4729 CH4731 CH4732 CH4733 CH4734 CH4735
    Text: VOLTAGE REGULATOR PLANAR DIODE CHIPS HIGH POWER 3.3-100 VOLTS Electrically sim ilar to the J E D E C 1N 4 7 2 8 - 1N 4 764 Com patible with ultrasonic and thermocompression lead bonding, scrub and eutectic preform die bonding. Junction surfaces are protected from ambient


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    1N4728 1N4764 Note47 CH4760 CH4761 CH4762 CH4763 CH4764 CH4730 1N4764 CH4728 CH4729 CH4731 CH4732 CH4733 CH4734 CH4735 PDF

    PIN Diode chip

    Abstract: No abstract text available
    Text: Attenuator PIN Diode Chip ML47406-S-132 ML47406-S-132 Preliminary Specifications High Reliability Semiconductor Attenuator PIN Diode Chip Features • • • • • Package Outline Glass Passivation Thermocompression bondable Thermosonically bondable Gold metallisation


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    ML47406-S-132 ML47406-132 PSS-01-608 ML47406 MA47406 6091A 100mA PIN Diode chip PDF

    hp 3080 diode

    Abstract: No abstract text available
    Text: Small Signal RF PIN Diode Chips for Hybrid Integrated Circuits Technical Data HPND-0001 HPND-0002 Features Description • Thermocompression/ Thermosonically Bondable These PIN/NIP diode chips are specifically designed for hybrid applications requiring thermosonic or thermocompression


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    HPND-0001 HPND-0002 HPND-000X 5965-9143E hp 3080 diode PDF

    Untitled

    Abstract: No abstract text available
    Text: Board Design Considerations Bonding of capacitors to substrates can be categorized into two methods, those involving solder, which are prevalent, and those using other materials, such as epoxies and thermocompression or ultrasonic bonding with wire. The amount of solder applied to the chip capacitor will


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    330mm) PDF

    L1201

    Abstract: AVANTEK utl 1001 L1802 Avantek S Avantek limiter UTL-1002 Avanpak Avantek voltage controlled limiter AVANTEK, avanpak
    Text: Q Limiters Selection Guide avantek PRODUCT DESCRIPTION superb reliability and repeatability. All hybrid components are eutectically die attached and thermocompression bonded. The AH Series of thin-film limiters covers the full 2 to 18 GHz frequency range. They are offered in the subminiature limiter


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    UTL-1001 UTL-1002 GPL-1001 L1201 AVANTEK utl 1001 L1802 Avantek S Avantek limiter Avanpak Avantek voltage controlled limiter AVANTEK, avanpak PDF

    Untitled

    Abstract: No abstract text available
    Text: Texas Instruments TGA8300 Monolithic 2- to 18-GHz Amplifier Features • ■ ■ ■ ■ 18-dBm typical output power at 1-dB gain compression 6.5-dB gain Input and output SWR less than 2:1 Size: 0.093 x 0.064 x 0.006 inch Recessed V ^ m gate structure Description


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    TGA8300 18-GHz 18-dBm TGA8300 PDF

    TGF1350

    Abstract: No abstract text available
    Text: Texas Instruments TGF1350 Low-Noise Microwave GaAs FET Features • 1.5-dB noise figure with 11 -dB associated gain at 10 GHz ■ 2.2-dB noise figure with 7-dB associated gain at 18 GHz ■ All-gold metallization ■ Recessed 1/2-^m gate structure ■ Si3N4 channel passivation


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    TGF1350 TGF1350 PDF