DM6030HK
Abstract: MAAP-000077-SMB004 AN3016 DM4030LD MAAP-000077-PED000 MAAP-000077-PKG001 MAAP-000077-SMB001 MAAPGM0077-DIE
Text: Amplifier, Power, 13W 0.7-2.5 GHz MAAP-000077-PED000 Rev — Preliminary Datasheet Features ♦ 13 Watt Saturated Output Power Level ♦ Eutectically Mounted to Heat Spreader ♦ Next level integration is a Silver Epoxy-Based Process ♦ Variable Drain Voltage 6-10V Operation
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MAAP-000077-PED000
MAAPGM0077-PED000
10-mil
DM6030HK
MAAP-000077-SMB004
AN3016
DM4030LD
MAAP-000077-PED000
MAAP-000077-PKG001
MAAP-000077-SMB001
MAAPGM0077-DIE
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sac 405
Abstract: WLCSP flip chip IPACK2005 sensors mttf WLCSP chip mount SAC405 thetaja wlcsp "sac 405"
Text: The Effect of Electromigration on Eutectic SnPb and Pb-free Solders in Wafer Level-Chip Scale Packages Joanne Huang1, Stephen Gee2, Luu Nguyen2, King-Ning Tu1 1 Department of Materials Science and Engineering, University of California - Los Angeles, Los Angeles,
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IPACK200573417.
sac 405
WLCSP flip chip
IPACK2005
sensors mttf
WLCSP chip mount
SAC405
thetaja wlcsp
"sac 405"
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LED LASER
Abstract: ausn submount
Text: LSUB Vishay Electro-Films Ceramic Submount for High Power LED FEATURES • Ultra-low thermal resistance • Eutectic or epoxy LED die attach pads • Surface-mounted component assembly APPLICATIONS The LSUB series substrates are ceramic LED package bases designed to provide thermal management for high
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18-Jul-08
LED LASER
ausn submount
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Untitled
Abstract: No abstract text available
Text: LNE1 Die Specifications LNE1 G D S Backside: Source All dimensions in mils. Bonding Pads3 Dimensions Recommended Assembly Material 2 Die Geometry Length1 Width LNE1 30 30 Thickness 11 ± 1.5 Backside Metal Au Material Al-Si Notes: 1. Maximum values 2. Standard Au back is alloyed for optimum eutectic die attach. Ag backing is optional.
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A210C
Abstract: CTX4
Text: Surface Mount TCXO • 4.0 mm max. height • Wide temperature range CARDINAL COMPONENTS CTX4 • Various input supply voltage options • Eutectic reflow soldering possible Part Numbering Example: CTX4 L Z - A3 B3 - 15.360 CTX4 L Z A3 B3 15.360 SERIES CTX4
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T-090414-12
A210C
CTX4
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Untitled
Abstract: No abstract text available
Text: Recommended Reflow Soldering Profile Limiting Values* The below temperature profile for moisture sensitivity characterization is based on the IPC/JEDEC joint industry standard: J-STD-020D-01. Profile Feature SnPb eutectic assembly Pb-free assembly Average ramp-up rate Tsmax to Tp
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J-STD-020D-01.
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Untitled
Abstract: No abstract text available
Text: MAAP-000078-PED000 Amplifier, Power, 12W 2.0—6.0 GHz M/A-COM Products Preliminary: Rev B Features ♦ 12 Watt Saturated Output Power Level ♦ Eutectically Mounted to Heat Spreader ♦ Next level integration is a Silver Epoxy-Based Process ♦ Variable Drain Voltage 8-10V Operation
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MAAP-000078-PED000
MAAPGM0078-PED000
10-mil
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x-band power amplifier
Abstract: DM6030HK
Text: Amplifier, Power, 16W 1.3-2.5 GHz MAAP-000076-PED000 Rev A Preliminary Datasheet Features ♦ 16 Watt Saturated Output Power Level ♦ Eutectically Mounted to Heat Spreader ♦ Next level integration is a Silver Epoxy-Based Process ♦ Variable Drain Voltage 6-10V Operation
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MAAP-000076-PED000
MAAPGM0076-PED000
10-mil
x-band power amplifier
DM6030HK
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DM6030HK
Abstract: No abstract text available
Text: MAAP-000074-PED000 Amplifier, Power, 8W 2.0-8.0 GHz Rev A Preliminary Datasheet Features ♦ 8 Watt Saturated Output Power Level ♦ Eutectically mounted to Heat Spreader ♦ Next level integration is a Silver Epoxy-Based Process ♦ Variable Drain Voltage 6-10V Operation
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MAAP-000074-PED000
MAAP-000074-PED000
10-mil
DM6030HK
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BGA PROFILING
Abstract: fine BGA thermal profile M21131 hot air bga M21151 M21161 M21141G reflow hot air BGA M21136 M21151V
Text: 211xx-APP-002-A April 2006 SMT BGA Ball Grid Array Eutectic Solder Balls Application Note Products Affected: M21131, M21131V, M21136, M21141G4, M21141G5, M21151, M21151V, M21156, M21161G4, M21161G5 Introduction The objective of this application note is to provide the basic SMT design and process requirements necessary to
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211xx-APP-002-A
M21131,
M21131V,
M21136,
M21141G4,
M21141G5,
M21151,
M21151V,
M21156,
M21161G4,
BGA PROFILING
fine BGA thermal profile
M21131
hot air bga
M21151
M21161
M21141G
reflow hot air BGA
M21136
M21151V
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE InGaAs PIN photodiode G9230-01 Uses small package with no wire Features Applications l Easy to handle since there are no wires on chip AnSn eutectic bonding Optical fibers can be brought closer to the chip l Miniature package: 2 x 2 × 1 mm l High sensitivity: 0.95 A/W Typ. (λ=1.55 µm)
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G9230-01
SE-171
KIRD1055E01
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OPA9437EU
Abstract: Au Sn eutectic
Text: Infrared LED Chip OPA9437EU GaAlAs/GaAs 1. Material Substrate GaAs P Type Epitaxial Layer GaAlAs(N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy (Au/Sn Eutectic Metal) Parameter Symbol Min 3. Electro-Optical Characteristics Forward Voltage VF
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OPA9437EU
100mA
14mil
15mil
130um
14mil
OPA9437EU
Au Sn eutectic
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eutectic
Abstract: No abstract text available
Text: VF53 Die Specifications VF53 G S Backside: Drain All dimensions in mils. Bonding Pads3 Dimensions Recommended Assembly Material 2 Die Geometry Length1 Width VF53 30 56 Thickness 8 ± 1.0 Backside Metal Au Material Al/Si Notes: 1. Maximum values 2. Standard Au back is alloyed for optimum eutectic die attach. Ag backing is optional.
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diode 028
Abstract: 1n4148 die MIL-PRF-19500 1N4148-1 HCR4148D HCR4148M HCR4148MTX
Text: OPTEK Product Bulletin HCR4148 September 1996 Surface Mount Switching Diode Types HCR4148D, HCR4148M, TX, TXV Features Absolute Maximum Ratings Ta = 25° C unless otherwise noted • Constructed from ceramic, metal, and glass for rugged environments • Eutectic mounted silicon die.
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HCR4148
HCR4148D,
HCR4148M,
HCR4148D
HCR4148M
1N4148-1
MIL-PRF-19500/116.
MIL-PRF-19500
diode 028
1n4148 die
HCR4148D
HCR4148M
HCR4148MTX
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Untitled
Abstract: No abstract text available
Text: raOEXyXgTT ÄTFÄ[L N - C H A N N E L J U N C T IO N FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > A Aluminum 12,000 Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS .019" (0.483mm It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2% .
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483mm)
0254mm)
fl3bflb02
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2N2606
Abstract: No abstract text available
Text: » M © ? ©ÄY£\[L© P -C H A N N E L J U N C T IO N FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > A Aluminum 12,000 Backside Contact: 3,000 À Gold ASSEM BLY RECOMMENDATIONS 016" (0.406mm It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%.
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406mm)
0254mm)
2N2606
2N2608,
2N3376,
2N3378,
2N3695
2N3698
fl3bflb05
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Untitled
Abstract: No abstract text available
Text: Ä 1TM, Q ( N -C H A N N E L J U N C T IO N FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > A Aluminum 12,000 .017" i f t l (0.432mm) Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS . 016 " (0.406mm) Die Size- It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2% .
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432mm)
406mm)
0254mm)
2N3821
2N3824,
2N3921
2N3922,
2N5545
2N5547
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Untitled
Abstract: No abstract text available
Text: N-CH ANNEL JU N C TIO N FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS . 021“ 0.533mm It is advisable that: a) the die be eutectically mounted with gold silicon prelonn 98/2%.
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533mm)
0254mm)
flb02
D0D41G3
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Untitled
Abstract: No abstract text available
Text: THIN FILM BACK CONTACT RESISTORS MSBC SERIES The M S B C series back contact chip resistor offers designers a space-saving design in a . 0 2 0 " x . 0 2 0 " size that requires only one wire bond. The chip backside provides the other contact with eutectic or conductive epoxy attachment to the
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125mW,
100ppm
MSBC-2-S-T-10K-01
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transistor CD 910
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET SSDI y oo S P T 3571 HIGH FREQUENCY TRANSISTOR NPN CASE STYLE 14830 VALLEY VIEW LA MIRADA, CA.90638 213 921-9660 TWX 910-583-4807 FAX 213-921-2396 FEATURES ► t t 900 MHz fT MIN, 4 GHz fT MAX GOLD EUTECTIC DIE ATTACH LOW NOISE FIGURE < 4 dB
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2N5911
Abstract: Junction-FET 2N5397 2N5398 2N5912 U257 FS3D
Text: -Ælitron [F> ®®[yj Tr N -C H A N N E L J U N C T IO N FET Devices. Inc. CHIP NUMBER IN CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS . Hr (0.533mm It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%.
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533mm)
0254mm)
2N5911
Junction-FET
2N5397
2N5398
2N5912
U257
FS3D
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2N2606
Abstract: 2N3376 2N3378 2N3698 2N2608 2N3695
Text: -Ætttron Devices, Inc. P -C H A N N E L J U N C T IO N FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > A Aluminum 12,000 Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS _ .016" _ 0.406mm It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%.
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406mra)
0254mm)
2N2606
2N3376
2N3378
2N3698
2N2608
2N3695
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IC 7424
Abstract: SFT5094 pnp transistor 600V TRANSISTOR 714
Text: SFT5094 SOLID STATE DEVICES, INC 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSD1 (7734) • Fax: (714) 522-7424 1 Amp 600 Volts PNP TRANSISTOR Designer’s Data Sheet FEATURES: Low Profile Surface Mount Package 200° C O perating, Eutectic Die Attach
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670-SSDI
SFT5015
10Vdc)
100mA
300ns,
IC 7424
SFT5094
pnp transistor 600V
TRANSISTOR 714
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UC734
Abstract: 2N4116 2N3823 fet 2N3823 2n5105 2N5485 2NS105 2N3452 2N5104
Text: Contran e^@[D iij(gTr a i m , ( IM-CHAIMIMEL J U N C T I O N FE T Devices. CHIP NUMBER CONTACT METALLIZATIOIM Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 À Gold ASSEMBLY RECOMMENDATIONS It is advisable that: (0.305mm) a) the die be eutectically mounted with gold silicon preform 98/2%.
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305mm)
0254mm)
UC734
2N4116
2N3823 fet
2N3823
2n5105
2N5485
2NS105
2N3452
2N5104
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