HSCH-9161
Abstract: No abstract text available
Text: What H E W L E T T * mLlíM P A C K A R D Zero Bias Beamlead Detector Diode Technical Data HSCH-9161 Features Applications • Low Junction Capacitance • Lower Temperature Coefficient than Silicon • Durable Construction— Typical 6 gram beamlead strength
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HSCH-9161
HSMS-0005
HSMS-2850
HSCH-9161
10E-12
12xlO
84xlO
10C5Hz
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ZERO Bias diode
Abstract: 12Xl HSCH-9161
Text: What HEW LETT mLfiM P A C K A R D Zero Bias Beamlead Detector Diode Technical Data HSCH-9161 Features • Low Junction Capacitance • Lower Temperature Coefficient than Silicon • Durable Construction— Typical 6 gram beamlead strength • Operation to 110 GHz
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HSCH-9161
HSCH-9161
10E-12
12xlOE-6
84xlOE-6
ZERO Bias diode
12Xl
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HSCH-9161
Abstract: United Detector silicon diode application note 979
Text: HSCH-9161 Zero Bias Beamlead Detector Diode Data Sheet Description Features Avago’s HSCH-9161 is a GaAs beamlead detector diode, fabricated using the modified barrier integrated diode MBID process[1]. This diode is designed for zero bias detecting applications at frequencies through 110 GHz. It
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HSCH-9161
HSCH-9161
5988-6209EN
AV02-3625EN
United Detector silicon diode
application note 979
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RFID 5.8Ghz
Abstract: phase shift detector at 2.45GHz rf power detector voltage doubler HSMS-286K ATC100A101MCA50 AN1124 ATC100A1 rfid reader 915MHZ microstrip Antenna 5.8ghz ct 4060
Text: HSMS-286x Series Surface Mount Microwave Schottky Detector Diodes Data Sheet Description Features Avago’s HSMS‑286x family of DC biased detector diodes have been designed and optimized for use from 915 MHz to 5.8 GHz. They are ideal for RF/ID and RF Tag applications
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HSMS-286x
HSMS286x
OT-23/SOT143
th-323
SC70-3
OT-363
SC70-6
HSMS-286x-TR2G
HSMS-286x-TR1G
HSMS-286x-BLKG
RFID 5.8Ghz
phase shift detector at 2.45GHz
rf power detector voltage doubler
HSMS-286K
ATC100A101MCA50
AN1124
ATC100A1
rfid reader 915MHZ
microstrip Antenna 5.8ghz
ct 4060
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DIODE 839
Abstract: HSCH-9161 zero bias schottky diode detector zero bias diode
Text: TOSI WLEMHEWLETT PACKARD Zero Bias Beamlead Detector Diode Technical Data HSCH-9161 Features • Low Junction Capacitance • Lower Tem perature C oefficient than Silicon • Durable C onstruction— Typical 6 gram beam lead strength • O peration to 110 GHz
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HSCH-9161
HSCH-9161
5965-8854E
DIODE 839
zero bias schottky diode detector
zero bias diode
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Untitled
Abstract: No abstract text available
Text: What HEW LETT* miltm PACKARD Schottky Barrier Chips for Hybrid Integrated Circuits Technical Data HSMS-0005/06 HSMS-8002/12 Features Description/Applications • Thermocompression/ Thermosonically Bondable • Gold Metallization • Silicon Nitride Passivation
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OCR Scan
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HSMS-0005/06
HSMS-8002/12
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AGILENT TECHNOLOGIES 9161
Abstract: HSCH-9161 application note 979 HSMS-2850
Text: Agilent HSCH-9161 Zero Bias Beamlead Detector Diode Data Sheet Features • Low junction capacitance • Lower temperature coefficient than silicon 231 9.1 Description Agilent’s HSCH-9161 is a GaAs beamlead detector diode, fabricated using the modified
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HSCH-9161
HSCH-9161
5988-5907EN
5988-6209EN
10E-12
10E-6
AGILENT TECHNOLOGIES 9161
application note 979
HSMS-2850
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FR4 substrate fiberglass
Abstract: AV02-1388EN schottky diode application sot-23 diode common anode t4 HSMS-2865 HSMS-286C
Text: HSMS-286x Series Surface Mount Microwave Schottky Detector Diodes Data Sheet Description Features Avago’s HSMS‑286x family of DC biased detector diodes have been designed and optimized for use from 915 MHz to 5.8 GHz. They are ideal for RF/ID and RF Tag applications
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HSMS-286x
HSMS286x
OT-23/SOT10
HSMS-286x-TR2G
HSMS-286x-TR1G
HSMS-286x-BLKG
HSMS-286x.
2005-20089Avago
5989-4023EN
AV02-1388EN
FR4 substrate fiberglass
schottky diode application
sot-23 diode common anode t4
HSMS-2865
HSMS-286C
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Circuit integrated 8002
Abstract: HSMS0005 HSMS2850 HSMS8002 Hewlett-Packard microwave pin diode sn 8002
Text: Schottky Barrier Chips for Hybrid Integrated Circuits Technical Data HSMS-0005/06 HSMS-8002/12 Features Description/Applications • Thermocompression/ Thermosonically Bondable • Gold Metallization • Silicon Nitride Passivation • Uniform Electrical Characteristics
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HSMS-0005/06
HSMS-8002/12
Circuit integrated 8002
HSMS0005
HSMS2850
HSMS8002
Hewlett-Packard microwave pin diode
sn 8002
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IAM-81008
Abstract: 5082-2830 HSMP-3895 5082-3043 ina-02170 INA-01170 30533 5082-0012 5082-2970 HSMP 2800
Text: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101
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1N5711
1N5712
1N5719
1N5767
MSA-1023
MSA-1100
MSA-1104
MSA-1105
MSA-1110
VTO-9068
IAM-81008
5082-2830
HSMP-3895
5082-3043
ina-02170
INA-01170
30533
5082-0012
5082-2970
HSMP 2800
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HSCH-9161
Abstract: HSMS-2850 United Detector silicon diode
Text: HSCH-9161 Zero Bias Beamlead Detector Diode Data Sheet Description Avago’s HSCH-9161 is a GaAs beamlead detector diode, fabricated using the modified barrier integrated diode MBID process[1]. This diode is designed for zero bias detecting applications at frequencies through
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HSCH-9161
HSCH-9161
5988-5907EN
5988-6209EN
March31,
HSMS-2850
United Detector silicon diode
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HSCH-9162
Abstract: zero bias diode detector diode AGILENT TECHNOLOGIES 9162 HSMS-2850 zero bias schottky diode detector
Text: Agilent HSCH-9162 Zero Bias Beamlead Detector Diode Data Sheet Features • Low junction capacitance • Lower temperature coefficient than silicon 231 9.1 Description Agilent’s HSCH-9162 is a GaAs beamlead detector diode, fabricated using the modified
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HSCH-9162
HSCH-9162
5988-5907EN
5988-6210EN
10E-12
10E-6
zero bias diode
detector diode
AGILENT TECHNOLOGIES 9162
HSMS-2850
zero bias schottky diode detector
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HSCH-9161
Abstract: No abstract text available
Text: Zero Bias Beamlead Detector Diode Technical Data HSCH-9161 Features Applications • Low Junction Capacitance At room temperature and frequencies under 10 GHz, the silicon zero bias Schottky detectors HSMS-0005 and HSMS-2850 offer comparable performance. However, the HSCH-9161 yields
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HSCH-9161
HSMS-0005
HSMS-2850
HSCH-9161
5965-8854E
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Untitled
Abstract: No abstract text available
Text: Agilent HSCH-9161, -9162 Zero Bias Beamlead Detector Diodes Data Sheet Features • Low junction capacitance • Lower temperature coefficient than silicon 231 9.1 Description Agilent’s HSCH-9161 and HSCH-9162 are GaAs beamlead detector diodes, fabricated using
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HSCH-9161,
HSCH-9161
HSCH-9162
5965-8854E
5988-5907EN
10E-12
10E-6
HSCH-916x
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Untitled
Abstract: No abstract text available
Text: Who mLftM 1 HEW LETT PACKARD Zero Bias Schottky Diode Chip for Hybrid Integrated Circuits Technical Data HSMS-0005 Features • Thermocompression/ Thermosonically Bondable • Gold Metallization • Silicon Nitride Passivation • High Detection Sensitivity
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HSMS-0005
10ver
5963-0918E
5965-1236E
GD14362
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h51 diode
Abstract: No abstract text available
Text: ^ HEWLETTPA C K A R D Zero B ias Schottky D iode Chip for H ybrid Integrated C ircuits Technical Data HSMS-0005 F ea tu re s C hip O u tlin e • T herm ocom presslon/ T herm osonica lly Bondable • Gold M etallization • Silicon N itrid e P assivation • H igh D etectio n S en sitiv ity
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HSMS-0005
001Iz
IISMS-0005
0-23r
10H-H51
-OQ18
h51 diode
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Chips for Hybrid Integrated Circuits Technical Data HSMS-0005/06 HSMS-8002/12 Features Description/Applications • Thermocompression/ Thermosonically Bondable • Gold Metallization • Silicon Nitride Passivation • Uniform Electrical Characteristics
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HSMS-0005/06
HSMS-8002/12
5965-8855E
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HSCH-9161
Abstract: No abstract text available
Text: warn H EW L E T T* 1 "Em PA CK A R D Zero Bias Beamlead Detector Diode Technical Data HSCH-9161 Features Applications • Low Junction Capacitance At room temperature and frequen cies under 10 GHz, the silicon zero bias Schottky detectors HSMS-0005 and HSMS-2850 offer
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OCR Scan
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HSCH-9161
HSMS-0005
HSMS-2850
HSCH-9161
10E-12
10E-6
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HSCH-5337
Abstract: HSMS-2850 5082-3188 HSMP-3804 ifd 0512 5082-2970 5082-2800 SERIES DATASHEET 5082-2830 AT-41470 HSCH-9301
Text: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101
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1N5711
1N5712
1N5719
1N5767
MSA-1023
MSA-1100
MSA-1104
MSA-1105
MSA-1110
VTO-9068
HSCH-5337
HSMS-2850
5082-3188
HSMP-3804
ifd 0512
5082-2970
5082-2800 SERIES DATASHEET
5082-2830
AT-41470
HSCH-9301
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SM 8002 C
Abstract: SM 8002 lm 8002 IC 8002 sm 8012 sn 8002 SM+8002+C
Text: RmLftm SIHEWLETTA PACKARD S c h o t tk y B arrier Chips for H ybrid I n te g r a te d C ircu its Technical Data H S M S -0 0 0 5 /0 6 H S M S -8 0 0 2 /1 2 F eatures * T h er m o c o m p re ssio n / T h erm osonically B ondable * G o ld M e ta lliz a tio n
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HSMS-0005/06
HSMS-8002/12
5965-8855E
SM 8002 C
SM 8002
lm 8002
IC 8002
sm 8012
sn 8002
SM+8002+C
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HSCH-9161
Abstract: finline HSMS-2850 application note 979 detector diode
Text: Zero Bias Beamlead Detector Diode Technical Data HSCH-9161 Features Applications • Low Junction Capacitance At room temperature and frequencies under 10␣ GHz, the silicon zero bias Schottky detectors HSMS-0005 and HSMS-2850 offer comparable performance. However, the HSCH-9161 yields
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HSCH-9161
HSMS-0005
HSMS-2850
HSCH-9161
10E-12
finline
application note 979
detector diode
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9161
Abstract: HSCH-9161 839 DIODE
Text: Zero Bias Beamlead Detector Diode Technical Data HSCH-9161 Features Applications • Low Junction Capacitance At room temperature and frequencies under 10 GHz, the silicon zero bias Schottky detectors HSMS-0005 and HSMS-2850 offer comparable performance. However, the HSCH-9161 yields
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HSCH-9161
HSMS-0005
HSMS-2850
HSCH-9161
resi30
5965-8854E
9161
839 DIODE
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Untitled
Abstract: No abstract text available
Text: HEW LETT* 1"KM P A C K A R D Schottky Barrier Chips for Hybrid Integrated Circuits Technical Data HSMS-0005/06 HSMS-8002/12 Features Description/Applications • T herm ocom pressioii/ Therntosonically Bondable • Gold M etallization • Silicon N itride P assivation
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OCR Scan
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HSMS-0005/06
HSMS-8002/12
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IC RFID 2.45 GHz
Abstract: HSMS-286B HSMS-286K 915 MHz RFID c65 schottky ZZ 6-lead 34 sot-363 rf power amplifier FR4 epoxy 286l AN1124
Text: HSMS-286x Series Surface Mount Microwave Schottky Detector Diodes Data Sheet Description Features Avago’s HSMS‑286x family of DC biased detector diodes have been designed and optimized for use from 915 MHz to 5.8 GHz. They are ideal for RF/ID and RF Tag applications
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HSMS-286x
HSMS286x
OT-23/SOT143
higheSOT-323
SC70-3
OT-363
SC70-6
HSMS-286x-TR2G
HSMS-286x-TR1G
HSMS-286x-BLKG
IC RFID 2.45 GHz
HSMS-286B
HSMS-286K
915 MHz RFID
c65 schottky
ZZ 6-lead
34 sot-363 rf power amplifier
FR4 epoxy
286l
AN1124
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