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    TGF42 Price and Stock

    Aim & Thurlby Thandar Instruments TGF4242

    Arbitrary Function Generator, 2Ch/240Mhz; Signal Generator Type:Arbitrary, Function, Pulse; No. Of Channels:2 Channel; Product Range:Tgf Series; Bandwidth:240Mhz; Signal Generator Modulation:Am, Ask, Bpsk, Fm, Fsk, Pm, Pwm, Sum Rohs Compliant: Yes |Aim-Tti Instruments TGF4242
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark TGF4242 Bulk 1 1
    • 1 $1784
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    Electro-matic Products TGF4230EPU

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    Bristol Electronics TGF4230EPU 40
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    AIM-Cambridge TGF4242

    Generator: arbitrary, function; 240MHz; LCD TFT 4,3"; 480x272
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME TGF4242 1 1
    • 1 $1722.84
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    AIM-TTi TGF4242

    Aim-TTi TGF4242 Function/Pulse/Arbitrary Generator, 2 CH, 240MHz, USB/LXI, TGF4000 Series
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TestEquity LLC TGF4242 3
    • 1 $1784
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    TGF42 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TGF4230 TriQuint Semiconductor 1.2mm Discrete HFET Original PDF
    TGF4230-EEU TriQuint Semiconductor 1.2mm Discrete HFET Original PDF
    TGF4230-EEU TriQuint Semiconductor Discrete HFET Original PDF
    TGF4230-SCC TriQuint Semiconductor FET Transistor, DC-12GHz Discrete HFET Original PDF
    TGF4240 TriQuint Semiconductor 2.4mm Discrete HFET Original PDF
    TGF4240-EPU TriQuint Semiconductor 2.4mm Discrete HFET Original PDF
    TGF4240-SCC TriQuint Semiconductor FET Transistor, 2.4mm Discrete HFET Original PDF
    TGF4250 TriQuint Semiconductor 4.8 mm Discrete HFET Original PDF
    TGF4250-EEU TriQuint Semiconductor 4.8 mm Discrete HFET Original PDF
    TGF4250-EEU TriQuint Semiconductor Discrete HFET Original PDF
    TGF4250-SCC TriQuint Semiconductor FET Transistor, DC-10.5GHz Discrete HFET Original PDF
    TGF4260 TriQuint Semiconductor 9.6mm Discrete HFET Original PDF
    TGF4260-EPU TriQuint Semiconductor 9.6mm Discrete HFET Original PDF
    TGF4260-SCC TriQuint Semiconductor FET Transistor, 9.6mm Discrete HFET Original PDF

    TGF42 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4202 BD TRANSISTOR

    Abstract: 4202 BD TRANSISTOR parameter BV 501 TGF4230 TGF4230-EEU bond wire gold
    Text: T R I Q U I N T S E M TGF4230-EEU I C O N D U C 1.2mm Discrete HFET ● ● ● ● ● ● 1200 µm X 0.5 µm HFET T O R , I N C . 4230 Nominal Pout of 28.5- dBm at 8.5- GHz Nominal Gain of 10.0- dB at 8.5- GHz Nominal PAE of 55% at 8.5 - GHz Suitable for High-Reliability Applications


    Original     		PDF TGF4230-EEU TGF4230 TGF4230s 4202 BD TRANSISTOR 4202 BD TRANSISTOR parameter BV 501 TGF4230-EEU bond wire gold

    VP 1176 datasheet

    Abstract: LD 757 ps TGF4250-EEU 3 DG 1008
    Text: T R I Q U I N T S E M TGF4250-EEU I C O N D U C 4.8 mm Discr ete HFET ● ● ● ● ● ● 4800 µm x 0.5 µm HFET T O R , I N C . 4250 Nominal Pout of 34- dBm at 8.5- GHz Nominal Gain of 8.5- dB at 8.5- GHz Nominal PAE of 53% at 8.5 - GHz Suitable for high reliability applications


    Original     		PDF TGF4250-EEU TGF4250-EEU VP 1176 datasheet LD 757 ps 3 DG 1008

    TGF4230-EEU

    Abstract: No abstract text available
    Text: Product Data Sheet March 20, 2001 Discrete HFET TGF4230-EEU Key Features and Performance • • • • • • 1200 µm x 0.5 µm HFET Nominal Pout of 28.5 dBm at 8.5 GHz Nominal Gain of 10.0 dB at 8.5 GHz Nominal PAE of 55 % at 8.5 GHz Suitable for high reliability applications


    Original     		PDF TGF4230-EEU TGF4230-EEU TGF42

    4232 gm

    Abstract: UM 3491 TGF4240-SCC
    Text: Product Data Sheet March 31, 2003 2.4 mm Discrete HFET TGF4240-SCC Key Features and Performance • • • • • • • 2400 µm x 0.5 µm HFET Nominal Pout of 31.5 dBm at 8.5 GHz Nominal Gain of 10.0 dB at 8.5 GHz Nominal PAE of 56 % at 8.5 GHz Frequency Range: DC - 12 GHz


    Original     		PDF TGF4240-SCC TGF4240-SCC 0007-inch 4232 gm UM 3491

    TGF4260-EPU

    Abstract: No abstract text available
    Text: R I Q U I N T S E M I TGF4260-EPU C O N D U C 9.6mm Discrete HFET ● ● ● ● ● ● T O R , I N C . 4260 9600 m x 0.5 m Nominal Pout of 37 - dBm at 6.0 GHz Nominal Gain of 9.5 - dB at 6.0 GHz Nominal PAE of 52 % at 6.0 GHz Suitable for high reliability applications


    Original     		PDF TGF4260-EPU TGF4260-EPU

    VP 1176

    Abstract: VP 1176 datasheet TGF4250-EEU TriQuint Semiconductor bvgs VP+1176
    Text: Product Data Sheet March 16, 2001 Discrete HFET TGF4250-EEU Key Features and Performance • • • • • • 4800µm x 0.5 µm FET Nominal Pout of 34dBm at 8.5GHz Nominal Gain of 8.5dB at 8.5GHz Nominal PAE of 53% at 8.5GHz Suitable for high reliability applications


    Original     		PDF TGF4250-EEU 34dBm TGF4250-EEU VP 1176 VP 1176 datasheet TriQuint Semiconductor bvgs VP+1176

    TGF4230-SCC

    Abstract: No abstract text available
    Text: Product Data Sheet December 16, 2002 DC - 12 GHz Discrete HFET TGF4230-SCC Key Features and Performance • • • • • • Nominal Pout of 28.5 dBm at 8.5 GHz Nominal Gain of 10.0 dB at 8.5 GHz Nominal PAE of 55 % at 8.5 GHz 1200 µm HFET 0.61 x 0.74 x 0.1 mm 0.024 x 0.029 x


    Original     		PDF TGF4230-SCC TGF4230-SCC 0007-inch

    Untitled

    Abstract: No abstract text available
    Text: Product Data Sheet March 31, 2003 2.4 mm Discrete HFET TGF4240-SCC Key Features and Performance • • • • • • • 2400 µm x 0.5 µm HFET Nominal Pout of 31.5 dBm at 8.5 GHz Nominal Gain of 10.0 dB at 8.5 GHz Nominal PAE of 56 % at 8.5 GHz Frequency Range: DC - 12 GHz


    Original     		PDF TGF4240-SCC TGF4240-SCC 0007-inch

    TGF4240-EPU

    Abstract: No abstract text available
    Text: R I Q U I N T S E M I TGF4240-EPU C O N D U C 2.4mm Discrete HFET ● ● ● ● ● ● 2400 m x 0.5 m T O R , I N C . 4240 Nominal Pout of 31.5 - dBm at 8.5 GHz Nominal Gain of 10 - dB at 8.5 GHz Nominal PAE of 56% at 8.5 GHz Suitable for high reliability applications


    Original     		PDF TGF4240-EPU 100mA TGF4240-EPU

    17417

    Abstract: TGF4250-EEU
    Text: S-Parameter Data for TGF4250-EEU # GHZ S MA R 50 ! TGF4250-EEU ! VD=8V, ID=30%IDSS Frequency S11 S21 S12 S22 GHz MAG ANG(o) MAG ANG(o) MAG ANG(o) MAG ANG(o) 0.5 0.943 -106.98 9.887 122.68 0.026 35.1 0.533 -163.66 1 0.932 -139.41 5.725 103.61 0.03 19.75 0.591


    Original     		PDF TGF4250-EEU 17417 TGF4250-EEU

    1FT sot23-6

    Abstract: TGF4260 TGF4260-SCC UM 7108 F
    Text: Product Data Sheet March 31, 2003 9.6 mm Discrete HFET TGF4260-SCC Key Features and Performance • • • • • • • 9600 µm x 0.5 µm HFET Nominal Pout of 37dBm at 6 GHz Nominal Gain of 9.5dB at 6 GHz Nominal PAE of 52% at 6 GHz Frequency Range: DC - 10.5 GHz


    Original     		PDF TGF4260-SCC 37dBm TGF4260-SCC 0007-inch 1FT sot23-6 TGF4260 UM 7108 F

    Untitled

    Abstract: No abstract text available
    Text: Product Data Sheet December 16, 2002 DC - 12 GHz Discrete HFET TGF4230-SCC Key Features and Performance • • • • • • Nominal Pout of 28.5 dBm at 8.5 GHz Nominal Gain of 10.0 dB at 8.5 GHz Nominal PAE of 55 % at 8.5 GHz 1200 µm HFET 0.61 x 0.74 x 0.1 mm 0.024 x 0.029 x


    Original     		PDF TGF4230-SCC TGF4230-SCC 0007-inch

    Untitled

    Abstract: No abstract text available
    Text: Product Data Sheet March 31, 2003 9.6 mm Discrete HFET TGF4260-SCC Key Features and Performance • • • • • • • 9600 µm x 0.5 µm HFET Nominal Pout of 37dBm at 6 GHz Nominal Gain of 9.5dB at 6 GHz Nominal PAE of 52% at 6 GHz Frequency Range: DC - 10.5 GHz


    Original     		PDF TGF4260-SCC 37dBm TGF4260-SCC 0007-inch

    VP 1176 datasheet

    Abstract: TGF4250-SCC VP 1176
    Text: Product Data Sheet December 16, 2002 DC - 10.5 GHz Discrete HFET TGF4250-SCC Key Features and Performance • • • • • • • Nominal Pout of 34 dBm at 8.5 GHz Nominal Gain of 8.5 dB at 8.5 GHz Nominal PAE of 53% at 8.5 GHz Suitable for high reliability applications


    Original     		PDF TGF4250-SCC TGF4250-SCC 0007-inch VP 1176 datasheet VP 1176

    Untitled

    Abstract: No abstract text available
    Text: H I U I N S E M I C O N D U C T O R , T IQSt 9.6mm Discrete HFET TGF4260-EPU 9600 pm x 0.5 pm Nominal Pout of 37-dBm at 6.0 GHz Nominal Gain of 9.5-dB at 6.0 GHz # Nominal PAE of 52% at 6.0 GHz % Suitable for high reliability applications # 0,572 x 2,324 x 0,102 mm


    OCR Scan     		PDF TGF4260-EPU 37-dBm

    TGF4260-EPU

    Abstract: No abstract text available
    Text: H I Q U I N S T E M I C O N D U C T R , I N C 4260 9.6mm Discrete HFET TGF4260-EPU O n 9600 pm x 0.5 pm Nominal Pout of 37-dBm at 6.0 GHz Nominal Gain of 9.5-dB at 6.0 GHz # Nominal PAE of 52% at 6.0 GHz Suitable for high reliability applications # 0,572 x 2,324 x 0,102 mm


    OCR Scan     		PDF TGF4260-EPU 37-dBm

    Untitled

    Abstract: No abstract text available
    Text: T R I Q U I N T S E M I C O N D U C T O R , TO 1.2mm Discrete HFET TGF4230-EEU # 1200 im X 0.5 (im HFET Nominal Pout of 28.5-dBm at 8.5-GHz Nominal Gain of 10.0-dB at 8.5-GHz # Nominal PAE of 55% at 8.5-GHz I N C 4230 O Suitable for High-Reliability Applications


    OCR Scan     		PDF TGF4230-EEU F4230 TGF4230s

    Untitled

    Abstract: No abstract text available
    Text: S E M I C O N D U C T O R , I N C TGF4250-EEU 4800 iim x 0.5 Jim HFET Nominal Pout of 34-dBm at 8.5-GHz Nominal Gain of 8.5-dB at 8.5-GHz # Nominal PAE of 53% at 8.5-GHz O Suitable for high reliability applications # 0,572 x 1,334 x 0,102 mm 0.023 x 0.053 x 0.004 in.


    OCR Scan     		PDF TGF4250-EEU 34-dBm TGF4250-EEU 13-dB

    i678

    Abstract: No abstract text available
    Text: TGF4250-SCC, POWER MICROWAVE HFET A U G U S T 1994 0.5 |am x 1200 |am FET Output Power 28 dBm at 8.5 GHz Power Added Efficiency 50% at 8.5GHz ?!"!"!?!?! !?!?!?!?!?!?! 8.5dB Typical Large Signal Gain Size: 0,609 x 0,737 x 0,102 mm 0.024 x 0.029 x 0.004 in


    OCR Scan     		PDF TGF4250-SCC, TGF4250-SCC TGF4250-SCC MS/402 i678

    4202 BD TRANSISTOR

    Abstract: Transistor F423
    Text: T H I U I N T S E M TGF4230-EEU I C O N D U C T 1.2mm Discrete HFET O R , I N C 4230 # 1200 Mm X 0.5 \im HFET Nominal Pout of 28.5- dBm at 8.5-GHz Nominal Gain of 1 0 .0 -dB at 8.5- GHz # Nominal PAE of 55% at 8 .5 -GHz Suitable for High-Reliability Applications


    OCR Scan     		PDF TGF4230-EEU F4230 TGF4230s 4202 BD TRANSISTOR Transistor F423

    TGF4240-EPU

    Abstract: No abstract text available
    Text: T R I Q U I N S T E M I C TGF4240-EPU O N D U C T 2.4mm Discrete HFET 2400 pm x 0.5 \im Nominal Pout of 31.5-dBm at 8.5 GHz Nominal Gain of 10-dB at 8.5 GHz # Nominal PAE of 56% at 8.5 GHz Suitable for high reliability applications 0,572 x 0,978 x 0,102 mm


    OCR Scan     		PDF TGF4240-EPU 10-dB 100mA 995-8465EMICONDUCTOR, TGF4240-EPU

    TGF4212

    Abstract: No abstract text available
    Text: Texas Instruments TGF4212 Medium-Power Microwave GaAs FET Features • 29-dBm pulsed power output at 1-dB gain compression 10 GHz ■ 40% CW power-added efficiency (10 GHz) ■ Low thermal impedance of 18°C/W ■ Recessed 1/2-^m gate structure ■ Via grounds for source terminals


    OCR Scan     		PDF TGF4212 29-dBm TGF4212

    Untitled

    Abstract: No abstract text available
    Text: T H I Q U I N 4240 S E M I C O N D U C T O R , T TGF4240-EPU 2.4mm Discrete HFET £ 2400 pm x 0.5 Jim Nominal Pout of 31.5-dBm at 8.5 GHz Nominal Gain of 10-dB at 8.5 GHz # Nominal PAE of 56% at 8.5 GHz Suitable for high reliability applications 0,572 x 0,978 x 0,102 mm


    OCR Scan     		PDF TGF4240-EPU 10-dB

    402 rp transistor

    Abstract: TGF4230-EPU
    Text: TGF4230-EPU, POWER MICROWAVE HFET • 0.5 |am x 1200 |am FET • 28 dBm Output Power at 1-dB Gain Compression at 8.5 GHz • Power Added Efficiency 50% at 8.5GHz • 8.5dB Typical Large Signal Gain at 8.5GHz


    OCR Scan     		PDF TGF4230-EPU, TGF4230-EPU TGF4230-EPU MS/402 402 rp transistor