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    Focus Display Solutions Inc C162ALBVGSW2WN55PAB

    16X2 UWVD CHARACTER LCD
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    Focus Display Solutions Inc C162ALBVGSW6WN55PAB

    16X2 UWVD CHARACTER LCD
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    Vishay Intertechnologies MMSZ5262B-V-GS08

    Zener Diode; Zener Voltage Nom:51V; Power Dissipation:500Mw; Diode Case Style:Sod-123; No. Of Pins:2Pins; Operating Temperature Max:150°C; Diode Mounting:Surface Mount; Product Range:Mmsz Series; Qualification:- Rohs Compliant: Yes |Vishay MMSZ5262B-V-GS08
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    Newark MMSZ5262B-V-GS08 Cut Tape 2,900 15,000
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    Vishay Intertechnologies MMSZ5264B-V-GS08

    Zener Diode; Zener Voltage Nom:60V; Power Dissipation:500Mw; Diode Case Style:Sod-123; No. Of Pins:2Pins; Operating Temperature Max:150°C; Diode Mounting:Surface Mount; Product Range:Mmsz Series; Qualification:- Rohs Compliant: Yes |Vishay MMSZ5264B-V-GS08
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    Newark MMSZ5264B-V-GS08 Cut Tape 2,167 1
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    Vishay Intertechnologies MMSZ5244B-V-GS08

    Zener Diode; Zener Voltage Nom:14V; Power Dissipation:500Mw; Diode Case Style:Sod-123; No. Of Pins:2Pins; Operating Temperature Max:150°C; Diode Mounting:Surface Mount; Product Range:Mmsz Series; Qualification:- Rohs Compliant: Yes |Vishay MMSZ5244B-V-GS08
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    Newark MMSZ5244B-V-GS08 Cut Tape 207 15,000
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    BVGS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2n5248

    Abstract: PF5101 2N5248 equivalent 2N5247 PN4857 PN4858 U1897 2N5245 PF5301-2 2N5460
    Text: Discrete POWER & Signal Technologies N-Channel JFETs Switches / Choppers BVGSS BVGDO V @ IG µA) Min (µ IGSS *IDGO (nA) @ VDG Max (V) ID(off) V (nA) @ V DS GS Max (V) (V) VP ID (V) @ VDS (nA) Min Max (V) Device No. Case Style 2N5555 2N5638 2N5639 2N5640


    Original     		PDF 2N5555 2N5638 2N5639 2N5640 PN4360 PN5033 2n5248 PF5101 2N5248 equivalent 2N5247 PN4857 PN4858 U1897 2N5245 PF5301-2 2N5460

    PJ32

    Abstract: nj132 SMP4117 SMP4339 smpp1086 SMP3824 SMPJ309 interfet SMP3369 SMP4393
    Text: Databook.fxp 1/13/99 2:09 PM Page E-2 E-2 01/99 Small Outline Surface Mount Package Devices N-Channel Silicon Junction Field-Effect Transistors Device Type BVGSS IGSS VGS (OFF) Limits Min Max (V) (V) IDSS Conditions VDS ID (V) (nA) Min (V) @IG (µA) Max


    Original     		PDF SMP3369 SMP3370 SMP3458 SMP3459 SMP3460 SMP5462 SMPJ174 SMPJ175 PJ32 nj132 SMP4117 SMP4339 smpp1086 SMP3824 SMPJ309 interfet SMP3369 SMP4393

    2N3819 equivalent

    Abstract: UC734 2N5668 2N5078 2N3822 equivalent 2n5105 2N5485 U1994E DSASW0036854 2N3821
    Text: *BVDgo Case Ciss or Type Style Geometry Max BVgss Number TO (pF) Min (V) 2N3819 72 FN2.5 25 8.0 2N3821 72 FN3.6 50 6.0 2N3822 72 FN3.6 50 6.0 2N3823 72 FN2.5 30 6.0 2N4223 72 FN2.5 30 6.0 2N4224 72 FN2.5 30 6.0 2N4416 72 FN2.5 30 4.0 2N4416A 72 FN2.5 30


    Original     		PDF 2N3819 2N3821 2N3822 2N3823 2N4223 2N4224 2N4416 2N4416A 2N5078 2N5103 2N3819 equivalent UC734 2N5668 2N3822 equivalent 2n5105 2N5485 U1994E DSASW0036854

    SOTKS210

    Abstract: FN22 FN39.8 DSASW0036854 fn222
    Text: Vgs BVgss Ciss Crss Type Case off Geometry Min Max Max Number Style Min (V) (pF) (pF) (V) SOTKS3684 FN22.2 50 4 1.2 2.0 23 SOTKS3684A FN22.2 50 4 1.2 2.0 23 SOTKS3685 FN22.2 50 4 1.2 1.0 23 SOTKS3685A FN22.2 50 4 1.2 1.0 23 SOTKS3686 FN22.2 50 4 1.2 0.6


    Original     		PDF OTKS3684 OTKS3684A OTKS3685 OTKS3685A OTKS3686 OTKS3686A OTKS3687 OTKS3687A OTKS4867 OTKS4867A SOTKS210 FN22 FN39.8 DSASW0036854 fn222

    UNION CARBIDE

    Abstract: No abstract text available
    Text: LSK389 ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER FEATURES ULTRA LOW NOISE en = 0.9nV/√Hz typ TIGHT MATCHING IVGS1-2I = 20mV max HIGH BREAKDOWN VOLTAGE BVGSS = 40V max HIGH GAIN Gfs = 20mS (typ) LOW CAPACITANCE 25pF typ IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK389


    Original     		PDF LSK389 2SK389 400mW 25-year-old, UNION CARBIDE

    "DUAL N-Channel JFET"

    Abstract: Dual N-Channel JFET 2n4117a equivalent 2SK389 equivalent U405 JFET u404 spice LSK389B 2N4119A equivalent 3N165 equivalent LSK389A
    Text: LSK389 ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW NOISE TIGHT MATCHING HIGH BREAKDOWN VOLTAGE HIGH GAIN LOW CAPACITANCE en = 0.9nV/√Hz typ |VGS1-2| = 20mV max BVGSS = 40V max Yfs = 20mS (typ) 25pF typ TO-71


    Original     		PDF LSK389 400mW 2SK389 "DUAL N-Channel JFET" Dual N-Channel JFET 2n4117a equivalent 2SK389 equivalent U405 JFET u404 spice LSK389B 2N4119A equivalent 3N165 equivalent LSK389A

    VP0104N2

    Abstract: M5030
    Text: VP0104N2 DMOS N-CHANNEL TRANSISTOR DESCRIPTION: The ASI VP0104N2 is an N-Channel Enhancement-Mode Vertical DMOS Transistor Designed for General Purpose Switching Applications. PACKAGE STYLE TO- 39 MAXIMUM RATINGS BVDSS -40 V BVDGS -40 V BVGSS ±20 V RDS ON


    Original     		PDF VP0104N2 VP0104N2 M5030

    Untitled

    Abstract: No abstract text available
    Text: N-Channel Metal Can JFET’s Part No. @ VD S & ID RDS on Min. Max. (V) (V) (V) (V) (nA) (Ω) 4.0 10.0 5 3.0 3.0 9.0 5 3.0 1.0 4.0 5 3.0 2N5432 2N5433 VP BVGSS Min. 25 2N5434 @ ID Ciss Max. Crss Max. to n Max. toff Max. Package (mA) (pF) (pF) (ns) (ns) Bulk


    Original     		PDF 2N5432 2N5433 2N5434 2N3686 2N3822 2N4118A 2N4416A 2N3684 2N5197 2N6485

    amelco

    Abstract: LSK389B
    Text: LSK389 ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET FEATURES ULTRA LOW NOISE en = 0.9nV/√Hz typ TIGHT MATCHING IVGS1-2I = 20mV max HIGH BREAKDOWN VOLTAGE BVGSS = 40V max HIGH GAIN Gfs = 20mS (typ) LOW CAPACITANCE Top View TO-71 25pF typ IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK389


    Original     		PDF LSK389 2SK389 400mW 25-year-old, amelco LSK389B

    2N4447

    Abstract: 2N4446 2N4445 2N4448 2N5432 2N5433 2N5434 SDF1001 SDF1002 SDF1003
    Text: Igss *BVDgo Vgs Vgs Case Ciss Crss Idss Idss or R on or (off) (off) Type Style Geometry Max Max Min Max *Idgo Max BVgss Min Max Number (pF) (pF) (v) (v) Max (ohms) (TO) Min (V) (V) (V) (nA) 2N4445 46 FN9.1/FN9 25 35 20 2.0 10.0 150 3.0 5.0 2N4446 46 FN9.1/FN9


    Original     		PDF 2N4445 2N4446 2N4447 2N4448 2N5432 2N5433 2N5434 SDF1001 SDF1002 SDF1003 SDF1001 SDF1002 SDF1003

    Untitled

    Abstract: No abstract text available
    Text: [j^ [D tUJ TF ©ÄTTM,© LOW P O W E R FIELD EFFE C T T R A N S IS T O R S L@W [ M © D © [ 1  I l [ p y i F D [ l [ ^ s ' M ° © [ n l  [ M [ M I [ L [ F i T T É Type Number Case Style (T O -) Geometry BVgss Min (V) Ciss Max (pF) Crss Max (pF) Vgs (off)


    OCR Scan     		PDF 2N3684 2N3684A 2N3685 2N3685A 2N3686 2N3686A 2N3687 2N3687A 2N4867 2N4867A

    UC754

    Abstract: UC758
    Text: ATCdL LOW P O W E R FIELD E FFEC T T R A N S IS T O R S IMliOMtL ¡PÖJM^©©!! G^tgKlÄMilL Type Number •BVDgo or Case BVgss Style Min (T O - Geometry (V) Ciss Max (pF) Crss Max (PF) Vgs (off) Min Max (V) lgss Max (nA) Yls Min Max (uMhos) Idss Min Max


    OCR Scan     		PDF KK4302 KK4303 KK4304 UC100 UC105 UC110 UC120 UC130 UC135 UC701 UC754 UC758

    Untitled

    Abstract: No abstract text available
    Text: F4 9-97 Small O utline Surface M ount Package Devices N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS BVgsS Device Type >GSS VgS(OFF) Limits Conditions Min Max Vos to Min Max @Vds (mA) (mA) (V) Min @Ig Max @VGS (V) (UA) (nA) (V) SMP 4340 SMP4341 SMP 4391


    OCR Scan     		PDF SMP4341 SMP245

    MMBFJ174

    Abstract: P1087 MMBF5115 2N5019 J176 2N5018 2N5115 2N5116 J174 MMBF5114
    Text: bflE D N ATL tSD1130 003^501 TDS • NSCS SE„ IC0N] JIS C r e t e ) P C hannel Vp@VDSlD RoS(on) ( a ) @ iD bvgss Device (V) (V) Min Min Ciss (PF) Max Crss (PF) Max ton (ns) Max toff (ns) Max Package (V) (nA) Min (mA) 10 -1 5 1000 75 1 45 10 35 65 T 0 -18(11)


    OCR Scan     		PDF 2N5018 2N5019 MMBF5114 O-236* 2N5115 MMBF5115 2N5116 MMBF5116 MMBFJ174 P1087 J176 J174

    Untitled

    Abstract: No abstract text available
    Text: JFETs & Discrete POWER & Signal Technologies National Semiconductor" N-Channel JFETs Low Frequency - Low Noise Amplifiers Device No. PF5101 PF5102 PF5103 PN4393 Case Style TO-92 TO-92 TO-92 TO-92 BVGSS GS off *GSS (V) @ VDS (nA)@ VDG (V) Min Max (V) (nA)


    OCR Scan     		PDF PF5101 PF5102 PF5103 PN4393

    Untitled

    Abstract: No abstract text available
    Text: J-FET SURFACE MOUNT JUNCTIO N FIELD EFFECT TRANSISTORS - N PACKAGE 3 PIN H SOT CERAMIC VGS OFF min max V V CHANNEL CISS pf bvGSS VOLTS •g s s max nA SLC3821 50 0.1 4.0 15/0.5 SLC3822 50 0.1 6.0 15/0.5 - 7.0 SLC3823 30 0.5 8.0 15/0.5 - 7.0 SLC4391 40 1.0


    OCR Scan     		PDF SLC3821 SLC3822 SLC4391 SLC4392 SLC4857 SLC4858 SLC308 SLC309 SLC310 SLC3823

    2n5248

    Abstract: BF245C BF247A 2N5485 2n5556 2N5668 BF244A 2N5103 BC264A BC264B
    Text: N - Channel Junction Field Effect Transistors GENERAL PURPOSE TYPE NO. MAXIMUM RATINGS CASE IDSS Yfs VGS oir Ciss Crss NF (V) max (PF> max (PF) max (dB) max 2 2 2 2 Pd (mW) BVGSS (V) min m ai (mmhos) min m i min (mA) BC264A BC264B BC264C BC264D BF246A TO-92DE


    OCR Scan     		PDF BC264A O-92DE BC264B BC264C BC264D BF246A O-92DA 2n5248 BF245C BF247A 2N5485 2n5556 2N5668 BF244A 2N5103

    MMBFJ174

    Abstract: MMBF5115 p1086 MMBFJ177
    Text: h&E D • b 5 D 1 1 3 D □OB'lSDl TDS ■ NSC5 P Channel V p @ V DSlD Device R BVgss V Min (V) (V) Min Max m d S( oii ) (ß ) Min @ ID Ciss Crss ton toff (PF) Max (PF) Max (ns) Max (ns) Package Max (mA) 2N5018 30 10 -15 1000 75 1 45 10 35 65 TO-18(11 )


    OCR Scan     		PDF 2N5018 2N5019 MMBF5114 2N5115 MMBF5115 2N5116 MMBF5116 MMBFJ174 MMBFJ175 MMBFJ176 p1086 MMBFJ177

    Untitled

    Abstract: No abstract text available
    Text: N - Channel Junction Field Effect Transistors SWITCHING/CHOPPING MAXIMUM RATINGS TYPE NO. Pd VGS ofl (mA) (V) BVGSS (mW) (V) min max rds(on) Ciss Crss ton toff (ohms) (PF) (PF) (bs) (ns) min IMI m ar max max max IMI 3 0.5 0.5 4 10 5 3 10 6 30 50 100 100 220


    OCR Scan     		PDF 2N3966 O-92DD O-72DH 2N4861A 2N5555 2N5638 2N5639 2N5640

    2N5521

    Abstract: 2N5562 2N5563
    Text: [PMEHUKgTT ÄTTÄ[L LO W P O W E R FIELD EFFECT T R A N S IS T O R S Case Style Typ« Number (TO - Geometry BVgss Min (V) Ciss Max (pF) Vgss(off) Min Max (V) Idss Yfs Min Max (mA) Min Max (UMhos) 2N3921 2N3922 2N3954 2N3954A 2N3955 71 71 71 71 71 FN3.6


    OCR Scan     		PDF 2N3921 2N3922 2N3954 2N3954A 2N3955 2N3955A 2N3956 2N3957 2N3958 2N4082 2N5521 2N5562 2N5563

    Untitled

    Abstract: No abstract text available
    Text: [p[^ Q [M TF ©ÆfiT£\[L ( L O W P O W E R F IE L D E FFEC T T R A N S IS T O R S MILTim mw Type Number Case Style (T O -) 2N4117 2N4117A 2N4118 2N4118A 2N4119 2N4119A 72 72 72 72 72 72 [LiAKMli NMg&MIMIIL [Fif^ Geometry BVgss Min (V) Ciss Max (pF) Crss


    OCR Scan     		PDF 2N4117 2N4117A 2N4118 2N4118A 2N4119 2N4119A

    U1898

    Abstract: No abstract text available
    Text: F8 9-97 Small Outline Surface Mount Package Devices N ^H A N N E rsÌLÌcO N T Ù N C T ÌO N T ÌE L D -E F F E C T TRANSISTORS Id s s V g s (O FF ) •g s s BVGSS Device Type Conditions Limits Min @IG Max @Vqs Min Max VDS M m (nA) (V) (V) (V) (V) Id (nA)


    OCR Scan     		PDF BF244C BF246A BF246B BF246C BF256A NJ132 NJ26L U1898

    P1086

    Abstract: No abstract text available
    Text: 9-97 F 10 Small Outline Surface Mount Package Devices P-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS Device Type VGS(OFF) I gss bvgss Max Min @IG (V) (mA) (nA) @Vgs (V) Min toss Conditions lim its Max Vos Id Min Max @VDS (nA) (mA) (mA) (V) (V) (V) (V)


    OCR Scan     		PDF

    2N5458

    Abstract: 2N5458 NATIONAL SEMICONDUCTOR
    Text: This Material [T f Copyrighted aa jr □ -C 03 ru By D O' Discrete POWER & Signal Technologies Natio nal Ln Q fcJ i Semiconductor' N-Channel JFETs General Purpose Amplifiers Device No. Case Style BVGSS V 'gss Its Respective Manufacturer V e iG ("A )@ vdg


    OCR Scan     		PDF 004Cmfl 2N5458 2N5458 NATIONAL SEMICONDUCTOR