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    TGF4212

    Abstract: No abstract text available
    Text: Texas Instruments TGF4212 Medium-Power Microwave GaAs FET Features • 29-dBm pulsed power output at 1-dB gain compression 10 GHz ■ 40% CW power-added efficiency (10 GHz) ■ Low thermal impedance of 18°C/W ■ Recessed 1/2-^m gate structure ■ Via grounds for source terminals


    OCR Scan     		PDF TGF4212 29-dBm TGF4212

    power amplifier 12 GHZ

    Abstract: GHz Power FET TGA8021 A 8014 tga8300 618 FET TGS8250 x-band power amplifier SPDT FETs amplifier 1 2 ghz
    Text: MMC GaAs Products Device Selection Guide AMPLIFIERS FREQ DEVICE DESCRIPTION TG A 8014 6-18 GHz power amplifier TG A 8035 6-18 GHz general-purpose NOMINAL NOISE MISCELLANEOUS GAIN FIGURE FEATURES RANGE 6 -18 GHz 8 dB POWER @ 1 dBc 27 dBm to 14 GHz 14% Power-added


    OCR Scan     		PDF TGA8061 TGA8021 TGF1350 300-/im 17dBm TGF4212 500-itm TGS8122 S8250 power amplifier 12 GHZ GHz Power FET A 8014 tga8300 618 FET TGS8250 x-band power amplifier SPDT FETs amplifier 1 2 ghz