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    Untitled

    Abstract: No abstract text available
    Text: Package outline TFBGA88: plastic thin fine-pitch ball grid array package; 88 balls; body 7 x 7 x 0.8 mm B D SOT951-1 A ball A1 index area A E A2 A1 detail X e1 ∅v ∅w b e C M M C A B C y y1 C N M L e K J H e2 G F E D C B A ball A1 index area 1 2 3 4 5 6


    Original     		PDF TFBGA88: OT951-1 MO-195

    M36L0T7050T2

    Abstract: M58LT128HB M58LT128HT M36L0t7050
    Text: M36L0T7050T2 M36L0T7050B2 128 Mbit Multiple Bank, Multilevel, Burst Flash memory and 32 Mbit (2 Mb x16) PSRAM, multichip package Features • ■ ■ ■ Multichip package – 1 die of 128 Mbit (8 Mb x16, Multiple Bank, Multilevel, Burst) Flash Memory – 1 die of 32 Mbit (2 Mb x16) Pseudo SRAM


    Original     		PDF M36L0T7050T2 M36L0T7050B2 M36L0T7050T2: 88C4h M36L0T7050B2: 88C5h M36L0T7050T2 M58LT128HB M58LT128HT M36L0t7050

    a6583

    Abstract: CR10 J-STD-020B M30L0R8000B0 M30L0R8000T0
    Text: M30L0R8000T0 M30L0R8000B0 256 Mbit 16Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers


    Original     		PDF M30L0R8000T0 M30L0R8000B0 54MHz a6583 CR10 J-STD-020B M30L0R8000B0 M30L0R8000T0

    PSRAM

    Abstract: RAM 2112 256 word J-STD-020B M30L0R8000B0 M30L0R8000T0 M36L0R8060B1 M36L0R8060T1 M69KB096AA
    Text: M36L0R8060T1 M36L0R8060B1 256 Mbit Multiple Bank, Multi-Level, Burst Flash Memory and 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 256 Mbit (16Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory


    Original     		PDF M36L0R8060T1 M36L0R8060B1 M36L0R8060T1: 880Dh M36L0R8060B1: 880Eh 54MHz PSRAM RAM 2112 256 word J-STD-020B M30L0R8000B0 M30L0R8000T0 M36L0R8060B1 M36L0R8060T1 M69KB096AA

    Untitled

    Abstract: No abstract text available
    Text: M30L0R8000T2 M30L0R8000B2 256 Mbit x16, multiple bank, multilevel, burst 1.8 V supply Flash memory Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program


    Original     		PDF M30L0R8000T2 M30L0R8000B2

    t3383

    Abstract: No abstract text available
    Text: M30L0R8000T0 M30L0R8000B0 256 Mbit 16Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers


    Original     		PDF M30L0R8000T0 M30L0R8000B0 54MHz t3383

    st MCP

    Abstract: No abstract text available
    Text: M36L0R7060U1 M36L0R7060L1 M36L0R7050U1 M36L0R7050L1 128 Mbit Mux I/O, Multiple Bank, Multi-Level, Burst Flash memory, 32 or 64 Mbit PSRAM, 1.8V supply Multi-Chip Package Preliminary Data Feature summary • ■ ■ ■ Multi-Chip Package – 1 die of 128 Mbit (8Mb x16, Mux I/O


    Original     		PDF M36L0R7060U1 M36L0R7060L1 M36L0R7050U1 M36L0R7050L1 64Mbit M36L0R7060U1: 882Eh, M36L0R7050U1: 882Eh M36L0R7060L1: st MCP

    e2p 25

    Abstract: M36W0R6050T0
    Text: M36W0R6050T0 M36W0R6050B0 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 64 Mbit (4Mb x 16) Flash Memory – 1 die of 32 Mbit (2Mb x 16) Pseudo SRAM •


    Original     		PDF M36W0R6050T0 M36W0R6050B0 M36W0R6050T0: 8810h M36W0R6050B0: 8811h e2p 25

    J-STD-020B

    Abstract: M36W0T7040T0 M69AW024B
    Text: M36W0T7040T0 M36W0T7040B0 128Mbit Multiple Bank, 8Mb x 16, Burst Flash Memory 16Mbit (1Mb x16) PSRAM, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 128 Mbit (8Mb x16, Multiple Bank, Burst) Flash Memory – 1 die of 16 Mbit (1Mb x16) Pseudo SRAM


    Original     		PDF M36W0T7040T0 M36W0T7040B0 128Mbit 16Mbit M36W0T7040T0: 881Eh M36W0T7040B0: 881Fh 40MHz J-STD-020B M36W0T7040T0 M69AW024B

    F8000-FFFFF

    Abstract: No abstract text available
    Text: M58WR016KT M58WR032KT M58WR064KT M58WR016KB M58WR032KB M58WR064KB 16-, 32-, 64-Mbit x16, multiple bank, burst 1.8 V supply Flash memories Features „ Supply voltage – VDD = 1.7 V to 2 V for program, erase and read – VDDQ = 1.7 V to 2 V for I/O buffers


    Original     		PDF M58WR016KT M58WR032KT M58WR064KT M58WR016KB M58WR032KB M58WR064KB 64-Mbit F8000-FFFFF

    Untitled

    Abstract: No abstract text available
    Text: M36L0R7060U1 M36L0R7060L1 M36L0R7050U1 M36L0R7050L1 128 Mbit Mux I/O, Multiple Bank, Multi-Level, Burst Flash memory, 32 or 64 Mbit PSRAM, 1.8V supply Multi-Chip Package Preliminary Data Feature summary • ■ ■ ■ Multi-Chip Package – 1 die of 128 Mbit (8Mb x16, Mux I/O


    Original     		PDF M36L0R7060U1 M36L0R7060L1 M36L0R7050U1 M36L0R7050L1 64Mbit M36L0R7060U1: 882Eh, M36L0R7050U1: 882Eh M36L0R7060L1:

    M36L0R7050

    Abstract: M36L0R7050L1 M36L0R7050U1 M36L0R7060L1 M36L0R7060U1 M69KM048AA M69KM096AA 64Mb-pSRAM ADQ14
    Text: M36L0R7060U1 M36L0R7060L1 M36L0R7050U1 M36L0R7050L1 128 Mbit Mux I/O, Multiple Bank, Multi-Level, Burst Flash memory, 32 or 64 Mbit PSRAM, 1.8V supply Multi-Chip Package Preliminary Data Feature summary • ■ ■ ■ Multi-Chip Package – 1 die of 128 Mbit (8Mb x16, Mux I/O


    Original     		PDF M36L0R7060U1 M36L0R7060L1 M36L0R7050U1 M36L0R7050L1 64Mbit M36L0R7060U1: 882Eh, M36L0R7050U1: 882Eh M36L0R7060L1: M36L0R7050 M36L0R7050L1 M36L0R7060L1 M69KM048AA M69KM096AA 64Mb-pSRAM ADQ14

    117h68

    Abstract: CR10 J-STD-020B
    Text: M30L0R7000T1 M30L0R7000B1 128 Mbit 8Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers


    Original     		PDF M30L0R7000T1 M30L0R7000B1 54MHz 117h68 CR10 J-STD-020B

    M36L0T7060B

    Abstract: M36L0T7060 TFBGA88 M69KW096B DSA0042593 flash E2p M58LT128HB M58LT128HT M36L0T7
    Text: M36L0T7060T2 M36L0T7060B2 128 Mbit Multiple Bank, Multilevel, Burst Flash memory and 64 Mbit (4 Mb x16) PSRAM, multichip package Preliminary Data Features • ■ ■ ■ Multichip package – 1 die of 128 Mbit (8 Mb x16, Multiple Bank, Multilevel, Burst) Flash Memory


    Original     		PDF M36L0T7060T2 M36L0T7060B2 M36L0T7060T2: 88C4h M36L0T7060B2: 88C5h M36L0T7060B M36L0T7060 TFBGA88 M69KW096B DSA0042593 flash E2p M58LT128HB M58LT128HT M36L0T7

    usb headset ic

    Abstract: PNX0161 Ericsson Base Station usb audio 48 pin USB Headset USB input sound system USB microphone headset USB microphone
    Text: Lowest power USB audio device PNX0161 single-chip solution for USB audio The PNX0161 is a small, low-power, USB audio device, and is a single-chip solution for digital, USB audio-based headset accessories. It moves the core digital headset functions to the USB connector of a mobile/portable


    Original     		PDF PNX0161 Hz/48 FLSTNPNX1108 usb headset ic Ericsson Base Station usb audio 48 pin USB Headset USB input sound system USB microphone headset USB microphone

    USB Interface IC NXP

    Abstract: USB microphone headset usb headset ic PNX0161 USB connector without stereo audio Usb audio device USB microphone
    Text: NXP Nexperia low-power USB audio device PNX0161 for mobile/portable applications Single-chip solution for USB audio This small, low-power, and fully USB-compliant IC makes it easy to build digital-headset accessories for mobile/portable devices. It provides stereo playback and recording,


    Original     		PDF PNX0161 bra973 PNX0161 USB Interface IC NXP USB microphone headset usb headset ic USB connector without stereo audio Usb audio device USB microphone

    Untitled

    Abstract: No abstract text available
    Text: M36L0R7060U1 M36L0R7060L1 M36L0R7050U1 M36L0R7050L1 128 Mbit Mux I/O, Multiple Bank, Multi-Level, Burst Flash memory, 32 or 64 Mbit PSRAM, 1.8V supply Multi-Chip Package Preliminary Data Feature summary • ■ ■ ■ Multi-Chip Package – 1 die of 128 Mbit (8Mb x16, Mux I/O


    Original     		PDF M36L0R7060U1 M36L0R7060L1 M36L0R7050U1 M36L0R7050L1 64Mbit M36L0R7060U1: 882Eh, M36L0R7050U1: 882Eh M36L0R7060L1:

    J-STD-020B

    Abstract: M36W0T7050B0 M36W0T7050T0 M69AW048B
    Text: M36W0T7050T0 M36W0T7050B0 128Mbit Multiple Bank, 8Mb x 16, Burst Flash Memory 32Mbit (2M x16) PSRAM, Dual Supply, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 128 Mbit (8Mb x16, Multiple Bank, Burst) Flash Memory – 1 die of 32 Mbit (2Mb x16) Pseudo SRAM


    Original     		PDF M36W0T7050T0 M36W0T7050B0 128Mbit 32Mbit M36W0T7050T0: 881Eh M36W0T7050B0: 881Fh 40MHz J-STD-020B M36W0T7050B0 M36W0T7050T0 M69AW048B

    M36L0R7050U3

    Abstract: M69KM024A M36L0R7050UL3 ADQ14 M36L0R8060L3 Numonyx MCP M69KM048AB
    Text: M36L0Rx0x0UL3 128- or 256-Mbit mux I/O, multiple bank, multilevel, burst flash memory, and 32- or 64-Mbit PSRAM, 1.8 V supply MCP Target Specification Features • ■ ■ Multichip package – 1 die of 128 Mbits (8 Mbits x16) or 256 Mbits (16 Mbits x16), mux I/O multiple


    Original     		PDF M36L0Rx0x0UL3 256-Mbit 64-Mbit M36L0R7050U3/M36L0R7060U3: 882Eh M36L0R8050U3/M36L0R8060U3: 881Ch M36L0R7050L3/M36L0R7060L3: 882Fh M36L0R8050L3/M36L0R8060L3: M36L0R7050U3 M69KM024A M36L0R7050UL3 ADQ14 M36L0R8060L3 Numonyx MCP M69KM048AB

    M58LR256KB

    Abstract: M58LR128KB
    Text: M58LR128KT M58LR128KB M58LR256KT M58LR256KB 128 or 256 Mbit x16, multiple bank, multilevel interface, burst 1.8 V supply flash memories Features „ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers


    Original     		PDF M58LR128KT M58LR128KB M58LR256KT M58LR256KB M58LR128KT/B M58LR256KT/B M58LR256KB

    J-STD-020B

    Abstract: M36W0R5020B0 M36W0R5020T0 m36w0r5
    Text: M36W0R5020T0 M36W0R5020B0 32 Mbit 2Mb x16, Multiple Bank, Burst Flash Memory and 4 Mbit SRAM, 1.8V Supply Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 32 Mbit (2Mb x 16) Flash Memory – 1 die of 4 Mbit (256Kb x16) SRAM • SUPPLY VOLTAGE


    Original     		PDF M36W0R5020T0 M36W0R5020B0 256Kb 8814h 8815h J-STD-020B M36W0R5020B0 M36W0R5020T0 m36w0r5

    CR10

    Abstract: J-STD-020B M30L0R8000B0 M30L0R8000T0 JEDEC J-STD-020B
    Text: M30L0R8000T0 M30L0R8000B0 256 Mbit 16Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers


    Original     		PDF M30L0R8000T0 M30L0R8000B0 54MHz CR10 J-STD-020B M30L0R8000B0 M30L0R8000T0 JEDEC J-STD-020B

    A0-A21

    Abstract: J-STD-020B M36W0R6050T0 M69AR048B 26-MAR-2004 8811h
    Text: M36W0R6050T0 M36W0R6050B0 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 64 Mbit (4Mb x 16) Flash Memory – 1 die of 32 Mbit (2Mb x 16) Pseudo SRAM •


    Original     		PDF M36W0R6050T0 M36W0R6050B0 M36W0R6050T0: 8810h M36W0R6050B0: 8811h A0-A21 J-STD-020B M36W0R6050T0 M69AR048B 26-MAR-2004 8811h

    Untitled

    Abstract: No abstract text available
    Text: M36W0R6050T1 M36W0R6050B1 64 Mbit 4 Mb x16, multiple bank, burst Flash memory and 32 Mbit (2 Mb ×16) PSRAM, multichip package Features • Multichip package – 1 die of 64 Mbit (4 Mb × 16) Flash memory – 1 die of 32 Mbit (2 Mb × 16) PSRAM ■ Supply voltage


    Original     		PDF M36W0R6050T1 M36W0R6050B1 M36W0R6050T1: 8810h M36W0R6050B1: 8811h