M58LT128HB
Abstract: M58LT128HT CR10 VFBGA56 026h
Text: M58LT128HT M58LT128HB 128 Mbit 8 Mb x 16, multiple bank, multilevel interface, burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program
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M58LT128HT
M58LT128HB
VFBGA56
M58LT128HB
M58LT128HT
CR10
VFBGA56
026h
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M36L0T7050T2
Abstract: M58LT128HB M58LT128HT M36L0t7050
Text: M36L0T7050T2 M36L0T7050B2 128 Mbit Multiple Bank, Multilevel, Burst Flash memory and 32 Mbit (2 Mb x16) PSRAM, multichip package Features • ■ ■ ■ Multichip package – 1 die of 128 Mbit (8 Mb x16, Multiple Bank, Multilevel, Burst) Flash Memory – 1 die of 32 Mbit (2 Mb x16) Pseudo SRAM
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M36L0T7050T2
M36L0T7050B2
M36L0T7050T2:
88C4h
M36L0T7050B2:
88C5h
M36L0T7050T2
M58LT128HB
M58LT128HT
M36L0t7050
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M36L0T7060B
Abstract: M36L0T7060 TFBGA88 M69KW096B DSA0042593 flash E2p M58LT128HB M58LT128HT M36L0T7
Text: M36L0T7060T2 M36L0T7060B2 128 Mbit Multiple Bank, Multilevel, Burst Flash memory and 64 Mbit (4 Mb x16) PSRAM, multichip package Preliminary Data Features • ■ ■ ■ Multichip package – 1 die of 128 Mbit (8 Mb x16, Multiple Bank, Multilevel, Burst) Flash Memory
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M36L0T7060T2
M36L0T7060B2
M36L0T7060T2:
88C4h
M36L0T7060B2:
88C5h
M36L0T7060B
M36L0T7060
TFBGA88
M69KW096B
DSA0042593
flash E2p
M58LT128HB
M58LT128HT
M36L0T7
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M58LT128HT
Abstract: Numonyx M36L0T7050T2 M58LT128HB M58LT128HTB 32-Mbit
Text: M36L0T7050T2 M36L0T7050B2 128 Mbit Multiple Bank, Multi-Level, Burst Flash memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package Preliminary Data Feature summary • ■ ■ ■ Multi-Chip Package – 1 die of 128 Mbit (8Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory
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M36L0T7050T2
M36L0T7050B2
M36L0T7050T2:
88C4h
M36L0T7050B2:
88C5h
52MHz
M58LT128HT
Numonyx
M36L0T7050T2
M58LT128HB
M58LT128HTB
32-Mbit
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