Untitled
Abstract: No abstract text available
Text: 32,768 WORD x 9 BIT BiCMOS STATIC RAM PRELIMINARY DESCRIPTION The TC55B329P/J is a 294,912 bits high speed static random access memory organized as 32,768 words by 9 bits using BiCMOS technology, and operated from a single 5-volt supply. Toshiba's BiCMOS technology and advanced circuit form provides high speed feature.
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TC55B329P/J
55B329P/J
TC55B329P/Jâ
TC55B329P/J-12,
TC55B329P/J-15
DIP32-P-300)
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TC55B329J
Abstract: DIP32-P-300
Text: 32,768 W O R D X 9 BIT BiCM OS STATIC RA M PRELIMINARY DESCRIPTION The TC55B329P/J is a 294,912 bits high speed static random access memory organized as 32,768 words by 9 bits using BiCMOS technology, and operated from a single 5-volt supply. Toshiba's BiCMOS
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TC55B329P/J
TC55B329P/J--
TC55B329P/J-12,
TC55B329P/J-15
DIP32-P-300)
TC55B329J
DIP32-P-300
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SOJ32P-3.0
Abstract: TC55B329 TC55B329J DD313
Text: TOSHIBA TC55B329P/J-10/12 SILICON GATE BiCMOS 32,768 WORD x 9 BIT BiCMOS STATIC RAM D e s c rip tio n The TC55B329P/J is a 294,912 bit high speed BiCMOS static random access memory organized as 32,768 words by 9 bits and operated from a single 5V supply. Toshiba's BiCMOS technology and advanced circuit design enable high speed operation.
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TC55B329P/J-10/12
TC55B329P/J
300mil
32-pln
SOJ32P-3.0
TC55B329
TC55B329J
DD313
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TC55B4257
Abstract: TC551664J-20
Text: X6 Capacity 288KBit Type No. Organization 15 15 TC55329AP/AJ-20 20 20 TC55329AP/AJ-25 25 25 TC56329AP/AJ-35 32,768 x 9 35 35 TC55B329P/J-10 10 10 TC55B329P/J-12 12 12 TC55B329P/J-15 15 15 20 20 25 25 TC551632J-36 35 35 TC5SB4256J-12 12 12 TC55B4256J-15 15
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TC55329AP/AJ-15
TC55329AP/AJ-20
TC55329AP/AJ-25
288KBit
TC56329AP/AJ-35
TC55B329P/J-10
TC55B329P/J-12
TC55B329P/J-15
TC551632J-20
512KBit
TC55B4257
TC551664J-20
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC55B329P/J-10/12 SILICON GATE BiCMOS 32,768 WORD x 9 BIT BiCMOS STATIC RAM Description The TC55B329P/J is a 294,912 bit high speed BiCMOS static random access memory organized as 32,768 words by 9 bits and operated from a single 5V supply. Toshiba’s BiCMOS technology and advanced circuit design enable high speed operation.
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OCR Scan
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TC55B329P/J-10/12
TC55B329P/J
300mil
32-pin
00Pfci3A5
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Untitled
Abstract: No abstract text available
Text: TOSHIBA LOGIC/MEMORY 4ÖE D DD523Ô0 32,768 W O R D x 9 BIT BiCM O S STATIC R A M 1 PRELIMINARY DESCRIPTION The TC55B329P/J is a 294,912 bits high speed static random access memory organized as 32,768 words by 9 bits using BiCMOS technology, and operated from a single 5-volt supply. Toshiba's BiCMOS
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DD523Ã
TC55B329P/J
TC55B329P/Jâ
TC55B329P/J-12,
TC55B329P/J-15
DIP32-P-300)
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TA8172AF
Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Text: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16
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015Z10
015Z11
015Z12
015Z2
015Z3
TA8172AF
TB 1226 BN
TA8859P
mg75n2ys40
t6961A
TA8242AK
ta8644n
7378P
ta8310
7628P
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41C464
Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page
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41C256
41C257
41C258
41C464
41C466
41C1000
41C1002
44C256
44C258
41C4000
TC55B8128
424170 NEC
CY70199
44C1000
IOT7164
HN62308BP
HN62404P
TC5116100
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TC55B8128
Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6
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TC511001
TC514101
514170B
514280B
TC5316200P
KM2X16100
KM23C16000G
KM23C16100G
KM23C16000FP
KM23C16100FP
TC55B8128
KM23C4000AG
TC534000AF
HN62308BP
TC551632
hitachi cross
mb83
68512U
HITACHI 64k DRAM
TC55B4256
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al 232 nec
Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
Text: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258
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KM41C256
KM41C257
KM41C258
KM41C464
KM41C466
KM41C1000
KM41C1001
KM41C1002
KM44C256
KM44C258
al 232 nec
TC55B4257
MB832001
NM9306
eeprom Cross Reference
D41264
TC5116100
HN28C256
NM9307
oki cross reference
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