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Toshiba America Electronic Components TC55B329J-10 IC,SRAM,32KX9,BICMOS-TTL,SOJ,32PIN,PLASTIC
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TC55B329 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: 32,768 WORD x 9 BIT BiCMOS STATIC RAM PRELIMINARY DESCRIPTION The TC55B329P/J is a 294,912 bits high speed static random access memory organized as 32,768 words by 9 bits using BiCMOS technology, and operated from a single 5-volt supply. Toshiba's BiCMOS technology and advanced circuit form provides high speed feature.	OCR Scan	TC55B329P/J 55B329P/J TC55B329P/Jâ TC55B329P/J-12, TC55B329P/J-15 DIP32-P-300)	PDF
TC55B329J Abstract: DIP32-P-300 Text: 32,768 W O R D X 9 BIT BiCM OS STATIC RA M PRELIMINARY DESCRIPTION The TC55B329P/J is a 294,912 bits high speed static random access memory organized as 32,768 words by 9 bits using BiCMOS technology, and operated from a single 5-volt supply. Toshiba's BiCMOS	OCR Scan	TC55B329P/J TC55B329P/J-- TC55B329P/J-12, TC55B329P/J-15 DIP32-P-300) TC55B329J DIP32-P-300	PDF
SOJ32P-3.0 Abstract: TC55B329 TC55B329J DD313 Text: TOSHIBA TC55B329P/J-10/12 SILICON GATE BiCMOS 32,768 WORD x 9 BIT BiCMOS STATIC RAM D e s c rip tio n The TC55B329P/J is a 294,912 bit high speed BiCMOS static random access memory organized as 32,768 words by 9 bits and operated from a single 5V supply. Toshiba's BiCMOS technology and advanced circuit design enable high speed operation.	OCR Scan	TC55B329P/J-10/12 TC55B329P/J 300mil 32-pln SOJ32P-3.0 TC55B329 TC55B329J DD313	PDF
TC55B4257 Abstract: TC551664J-20 Text: X6 Capacity 288KBit Type No. Organization 15 15 TC55329AP/AJ-20 20 20 TC55329AP/AJ-25 25 25 TC56329AP/AJ-35 32,768 x 9 35 35 TC55B329P/J-10 10 10 TC55B329P/J-12 12 12 TC55B329P/J-15 15 15 20 20 25 25 TC551632J-36 35 35 TC5SB4256J-12 12 12 TC55B4256J-15 15	OCR Scan	TC55329AP/AJ-15 TC55329AP/AJ-20 TC55329AP/AJ-25 288KBit TC56329AP/AJ-35 TC55B329P/J-10 TC55B329P/J-12 TC55B329P/J-15 TC551632J-20 512KBit TC55B4257 TC551664J-20	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA TC55B329P/J-10/12 SILICON GATE BiCMOS 32,768 WORD x 9 BIT BiCMOS STATIC RAM Description The TC55B329P/J is a 294,912 bit high speed BiCMOS static random access memory organized as 32,768 words by 9 bits and operated from a single 5V supply. Toshiba’s BiCMOS technology and advanced circuit design enable high speed operation.	OCR Scan	TC55B329P/J-10/12 TC55B329P/J 300mil 32-pin 00Pfci3A5	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA LOGIC/MEMORY 4ÖE D DD523Ô0 32,768 W O R D x 9 BIT BiCM O S STATIC R A M 1 PRELIMINARY DESCRIPTION The TC55B329P/J is a 294,912 bits high speed static random access memory organized as 32,768 words by 9 bits using BiCMOS technology, and operated from a single 5-volt supply. Toshiba's BiCMOS	OCR Scan	DD523Ã TC55B329P/J TC55B329P/Jâ TC55B329P/J-12, TC55B329P/J-15 DIP32-P-300)	PDF
TA8172AF Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P Text: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16	OCR Scan	015Z10 015Z11 015Z12 015Z2 015Z3 TA8172AF TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P	PDF
41C464 Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100 Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page	OCR Scan	41C256 41C257 41C258 41C464 41C466 41C1000 41C1002 44C256 44C258 41C4000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100	PDF
TC55B8128 Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256 Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6	OCR Scan	TC511001 TC514101 514170B 514280B TC5316200P KM2X16100 KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP TC55B8128 KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256	PDF
al 232 nec Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference Text: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258	OCR Scan	KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 KM44C258 al 232 nec TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference	PDF