Untitled
Abstract: No abstract text available
Text: FDB42AN15A0_F085 N-Channel Power Trench MOSFET June 2013 FDB42AN15A0_F085 N-Channel Power Trench® MOSFET 150V, 35A, 42mΩ D D Features Typ rDS on = 30mΩ at VGS = 10V, ID = 12A Typ Qg(tot) = 78nC at VGS = 10V, ID = 12A G UIS Capability RoHS Compliant
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FDB42AN15A0
O-263
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CHM3055LAPAGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHM3055LAPAGP CURRENT 12 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE
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CHM3055LAPAGP
O-252)
CHM3055LAPAGP
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GS 069
Abstract: Chenmko Enterprise
Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHM21A3PAPT CURRENT 20 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. TO-252A FEATURE * Small package. TO-252A
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CHM21A3PAPT
O-252A
O-252A)
GS 069
Chenmko Enterprise
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TC. 12A MOSFET Drivers
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHM3055LAPAPT CURRENT 12 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. TO-252A FEATURE * Small package. TO-252A
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CHM3055LAPAPT
O-252A
O-252A)
TC. 12A MOSFET Drivers
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CHM21A3PAGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHM21A3PAGP CURRENT 20 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE
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CHM21A3PAGP
O-252)
CHM21A3PAGP
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SVD12N65F
Abstract: No abstract text available
Text: SVD12N65T/SVD12N65F 12A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION These N-channel enhancement mode power field effect transistors are produced using Silan’ s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored
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SVD12N65T/SVD12N65F
SVD12N65T
O-220-3mperature(
O-220-3L
O-220F-3L
SVD12N65F
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2E12
Abstract: FSGL033D1 FSGL033R3 FSGL033R4 Rad Hard in Fairchild for MOSFET
Text: FSGL033R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both
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FSGL033R
FSGL033R
2E12
FSGL033D1
FSGL033R3
FSGL033R4
Rad Hard in Fairchild for MOSFET
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TA17522
Abstract: IRFP9240
Text: IRFP9240 Data Sheet July 1999 12A, 200V, 0.500 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of
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IRFP9240
TA17522
IRFP9240
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IRF9530
Abstract: IRF9531 IRF9530 mosfet
Text: S E M I C O N D U C T O R IRF9530, IRF9531, IRF9532, IRF9533, RF1S9530, RF1S9530SM 10A and -12A, -80V and -100V, 0.3 and 0.4 Ohm, P-Channel Power MOSFETs January 1998 Features Description • -10A and -12A, -80V and -100V These are P-Channel enhancement mode silicon gate
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IRF9530,
IRF9531,
IRF9532,
IRF9533,
RF1S9530,
RF1S9530SM
-100V,
IRF9530
IRF9531
IRF9530 mosfet
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IRF9530
Abstract: dc motor 9v DATA SHEET IRF9530 RF1S9530 RF1S9530SM RF1S9530SM9A TB334
Text: IRF9530, RF1S9530SM Data Sheet 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode
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IRF9530,
RF1S9530SM
TA17511.
IRF9530
dc motor 9v
DATA SHEET IRF9530
RF1S9530
RF1S9530SM
RF1S9530SM9A
TB334
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IRFP9240
Abstract: TA17522
Text: IRFP9240 Data Sheet January 2002 12A, 200V, 0.500 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of
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IRFP9240
IRFP9240
TA17522
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PDF
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IRFP9240
Abstract: IRFP9
Text: IRFP9240 Data Sheet July 1999 12A, 200V, 0.500 Ohm, P-Channel Power MOSFET Features This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of
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IRFP9240
TA17522.
IRFP9240
IRFP9
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IRF9130
Abstract: gate driver for mosfet irf9130 IRF9130 mosfet power mosfets to 204aa TC.. 12A MOSFET Drivers gate drive for mosfet irf9130
Text: IRF9130 Data Sheet February 1999 -12A, -100V, 0.30 Ohm, P-Channel Power MOSFET These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode
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IRF9130
-100V,
-100V
IRF9130
gate driver for mosfet irf9130
IRF9130 mosfet
power mosfets to 204aa
TC.. 12A MOSFET Drivers
gate drive for mosfet irf9130
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irfp9240
Abstract: IRFP9243
Text: IRFP9240, IRFP9241, IRFP9242, IRFP9243 S E M I C O N D U C T O R -10A and -12A, -200V and -150V, 0.50 and 0.70 Ohm, P-Channel Power MOSFETs December 1997 Features Description • -10A and -12A, -200V and -150V These are P-Channel enhancement mode silicon gate
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IRFP9240,
IRFP9241,
IRFP9242,
IRFP9243
-200V
-150V,
TA17522.
199st
irfp9240
IRFP9243
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IRF9530 mosfet
Abstract: IRF9530 RF1S9530 RF1S9530SM RF1S9530SM9A TB334
Text: IRF9530, RF1S9530SM Data Sheet 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs [ /Title These are P-Channel enhancement mode silicon gate power IRF95 field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified
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IRF9530,
RF1S9530SM
IRF95
530SM
IRF9530 mosfet
IRF9530
RF1S9530
RF1S9530SM
RF1S9530SM9A
TB334
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f3055l
Abstract: FP3055LE f3055 Fp3055 RFD3055LESM9A RFP3055 RFD3055LESM AN7254 RFD3055LE RFP3055LE
Text: LOGIC LEVEL POWER MOSFET DATA SHEETS RFD3055LE, RFD3055LESM, RFP3055LE S E M I C O N D U C T O R 12A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC TO-220AB • 12A, 60V SOURCE DRAIN
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RFD3055LE,
RFD3055LESM,
RFP3055LE
O-220AB
O-251AA
RFP3055LE
1e-30
06e-3
f3055l
FP3055LE
f3055
Fp3055
RFD3055LESM9A
RFP3055
RFD3055LESM
AN7254
RFD3055LE
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Untitled
Abstract: No abstract text available
Text: FSGL130R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both
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FSGL130R
FSGL130R
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FSYE13A0D
Abstract: FSYE13A0D1 FSYE13A0D3 FSYE13A0R FSYE13A0R1 FSYE13A0R3 2E12 MIL-STD-750 a3 4741 5
Text: FSYE13A0D, FSYE13A0R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.
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FSYE13A0D,
FSYE13A0R
FSYE13A0D
FSYE13A0D1
FSYE13A0D3
FSYE13A0R
FSYE13A0R1
FSYE13A0R3
2E12
MIL-STD-750
a3 4741 5
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IRF9530 mosfet
Abstract: IRF9530 RF1S9530 RF1S9530SM RF1S9530SM9A TB334 JEDEC TO-263A IRF9530 fairchild
Text: IRF9530, RF1S9530SM Data Sheet 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of
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IRF9530,
RF1S9530SM
TA17511.
IRF9530 mosfet
IRF9530
RF1S9530
RF1S9530SM
RF1S9530SM9A
TB334
JEDEC TO-263A
IRF9530 fairchild
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Untitled
Abstract: No abstract text available
Text: FSGL033R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both
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FSGL033R
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SEC irf630
Abstract: IRF630 SEC irf630 datasheet CIRF630 irf630 IRF630 p 4.5V to 100V input regulator 4.5V TO 100V INPUT REGULATORS
Text: IRF630 ! POWER MOSFET GENERAL DESCRIPTION FEATURES This Power MOSFET is designed for low voltage, high Dynamic dv/dt Rating speed power switching applications such as switching Repetitive Avalanche Rated regulators, converters, solenoid and relay drivers.
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IRF630
O-220
IRF630.
SEC irf630
IRF630 SEC
irf630 datasheet
CIRF630
irf630
IRF630 p
4.5V to 100V input regulator
4.5V TO 100V INPUT REGULATORS
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Untitled
Abstract: No abstract text available
Text: FSGL033R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both
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FSGL033R
FSGL033R
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PDF
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irfp9240
Abstract: No abstract text available
Text: HAJims S IRFP9240, IRFP9241, IRFP9242, IRFP9243 Semiconductor y y -10A and -12A, -200V and -150V, 0.50 and 0.70 Ohm, P-Channel Power MOSFETs December 1997 Features Description • -10A and -12A, -200V and -150V • High Input Impedance These are P-Channel enhancement mode silicon gate
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OCR Scan
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IRFP9240,
IRFP9241,
IRFP9242,
IRFP9243
-200V
-150V,
-150V
RFP9240,
irfp9240
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PDF
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Untitled
Abstract: No abstract text available
Text: ¡lì h a r r is U U F S S 13A 0 D , FSS1 S E M I C O N D U C T O R 12A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 12A, 100V, rOS ON = 0.1700 The Discrete Products Operation of Harris Semiconductor
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OCR Scan
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MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
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