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    IRF9531 Search Results

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    IRF9531 Price and Stock

    Harris Semiconductor IRF9531

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    Bristol Electronics IRF9531 35
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    Quest Components IRF9531 84
    • 1 $1.265
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    • 100 $0.6325
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    Int'l Rectif IRF9531

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    Vishay Intertechnologies IRF9531

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    International Rectifier IRF9531

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    Bristol Electronics IRF9531 2
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    TT Electronics Resistors IRF9531

    MOSFET Transistor, P-Channel, TO-220AB
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    Quest Components IRF9531 1
    • 1 $1.925
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    IRF9531 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF9531 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF9531 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF9531 International Rectifier TO-220 HEXFET Power MOSFET Scan PDF
    IRF9531 International Rectifier Transistors Scan PDF
    IRF9531 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRF9531 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRF9531 Unknown FET Data Book Scan PDF
    IRF9531 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF9531 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRF9531 Samsung Electronics TRANS MOSFET P-CH 60V 12A 3TO-220 Scan PDF
    IRF9531 Samsung Electronics P-CHANNEL POWER MOSFETS Scan PDF
    IRF9531 Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF

    IRF9531 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF9530

    Abstract: IRF9531 IRF9530 mosfet
    Text: S E M I C O N D U C T O R IRF9530, IRF9531, IRF9532, IRF9533, RF1S9530, RF1S9530SM 10A and -12A, -80V and -100V, 0.3 and 0.4 Ohm, P-Channel Power MOSFETs January 1998 Features Description • -10A and -12A, -80V and -100V These are P-Channel enhancement mode silicon gate


    Original     		PDF IRF9530, IRF9531, IRF9532, IRF9533, RF1S9530, RF1S9530SM -100V, IRF9530 IRF9531 IRF9530 mosfet

    chopper transformer winding for 24v battery charging

    Abstract: hp laptop charging CIRCUIT diagram p50n05 43a Hall effect pin out 2N2219 transistor substitute PURE SINE WAVE inverter schematic diagram 2n3906 npn magnetic amplifier saturable core P50N05E pe-61592
    Text: Application Note 29 October 1988 Some Thoughts on DC/DC Converters Jim Williams and Brian Huffman INTRODUCTION Many systems require that the primary source of DC power be converted to other voltages. Battery driven circuitry is an obvious candidate. The 6V or 12V cell in a laptop computer must be converted to different potentials needed for


    Original     		PDF 1500pF CTX300-4 B-07T CTX33-4 D45C1 CTX-02-13949-X1 21-110J LT1533 an29f AN29-46 chopper transformer winding for 24v battery charging hp laptop charging CIRCUIT diagram p50n05 43a Hall effect pin out 2N2219 transistor substitute PURE SINE WAVE inverter schematic diagram 2n3906 npn magnetic amplifier saturable core P50N05E pe-61592

    OP295G

    Abstract: OP295 OP495 2n1711 spice model NPN transistor 2n2222 beta value 2N1711 spice 2N2907 PNP Transistor Vaf OP295GP OP295GS OP295GS-REEL
    Text: Dual/Quad Rail-to-Rail Operational Amplifiers OP295/OP495 FEATURES Rail-to-Rail Output Swing Single-Supply Operation: 3 V to 36 V Low Offset Voltage: 300 mV Gain Bandwidth Product: 75 kHz High Open-Loop Gain: 1,000 V/mV Unity-Gain Stable Low Supply Current/Per Amplifier: 150 ␮A max


    Original     		PDF OP295/OP495 OP295 14-Lead OP295GBC OP495GBC C00331 OP295G OP295 OP495 2n1711 spice model NPN transistor 2n2222 beta value 2N1711 spice 2N2907 PNP Transistor Vaf OP295GP OP295GS OP295GS-REEL

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    transistor 2n1711

    Abstract: OP295 OP495 OP295G 2N3906 MAT03 OP295GBC OP495GBC REF43
    Text: Dual/Quad Rail-to-Rail Operational Amplifiers OP295/OP495 Battery-operated instrumentation Servo amplifiers Actuator drives Sensor conditioners Power supply control GENERAL DESCRIPTION Rail-to-rail output swing combined with dc accuracy are the key features of the OP495 quad and OP295 dual CBCMOS


    Original     		PDF OP295/OP495 OP495 OP295 14-Lead 16-Lead transistor 2n1711 OP295G 2N3906 MAT03 OP295GBC OP495GBC REF43

    CR02 am transistor

    Abstract: cr21 resistor CR16 GP10 W83601R W83602R w83601
    Text: W83601R/602R Winbond SMBus GPI/O W83601R/602R PRELIMINARY W83601R/602R Data Sheet Revision History Pages Dates Version Version Main Contents on Web 1 n.a. 2 n.a. 99/8 3 P.4,5 99/8 n.a. All the version before 0.30 are for internal use. 0.3 n.a. First publication.


    Original     		PDF W83601R/602R W83601R/602R W83601R W83602R LT1084 Custom602ap 602ap CR02 am transistor cr21 resistor CR16 GP10 w83601

    OP495

    Abstract: op2956 OP295 2N1711 spice 2n1711 spice model 2N2222 npn small signal current gain NPN transistor 2n2222 beta value 2N2907 PNP spice 2N2907 PNP Transistor Vaf AMP04
    Text: a FEATURES Rail-to-Rail Output Swing Single-Supply Operation: 3 V to 36 V Low Offset Voltage: 300 ␮V Gain Bandwidth Product: 75 kHz High Open-Loop Gain: 1,000 V/mV Unity-Gain Stable Low Supply Current/Per Amplifier: 150 ␮A max APPLICATIONS Battery-Operated Instrumentation


    Original     		PDF OP295/OP495 OP295 14-Lead 16-Lead C00331 OP495 op2956 OP295 2N1711 spice 2n1711 spice model 2N2222 npn small signal current gain NPN transistor 2n2222 beta value 2N2907 PNP spice 2N2907 PNP Transistor Vaf AMP04

    IRF9120

    Abstract: 1rf830 1rf9530 IRF9122 IRF9513 IRF9141 IRF9512 IRF9523 IRF843 IRF9130
    Text: - * sy € i± £ IR F 9522 IRF9523 IRF9530 IRF9531 IRF9532 IRF9533 »%^<n * f - 1 IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR ]R IR IR IR ¡R IR IR IR IR IR IR IR IR IR IR £ is V 500 N 45 0 P -100 P -60 P -100 P -60 P -100 P -60 P -100 P -60 P -200 P -150


    OCR Scan     		PDF 1RF842 O-220AB IRF843 T0-220AB IRF9130 IRF9223 1RF9230 IRF9231 IRF9232 1RF9233 IRF9120 1rf830 1rf9530 IRF9122 IRF9513 IRF9141 IRF9512 IRF9523

    irf9530

    Abstract: irf 9530 f953
    Text: IRF9530/9531 /9532/9533 c r S ilic a n ix in c o rp o ra te d P-Channel Enhancement Mode Transistors TO-22QAB TOP VIEW PRODUCT SUMMARY o PART NUMBER V BR DSS (V) lDS(ON) ( il) (A) IRF9530 -100 0.30 -1 2 IRF9531 -6 0 0.30 -1 2 IRF9532 -100 0.40 -10 IRF9533


    OCR Scan     		PDF IRF9530/9531 O-22QAB IRF9530 IRF9531 IRF9532 IRF9533 Ener33 F9531, IRF953 irf 9530 f953

    1RF9620

    Abstract: 1RF9540 1RF9622 IRF9532 IRF9522 IRF9523 IRF9611 IRF9630 samsung IRF9613 IRF9240
    Text: - W. f Ä * £ fê 13=25*0 m % tt % IRF9240 tR F 9 2 41 SAMSUNG SAMSUNG IRF9242 IRF9243 IRF9510 SAMSUNG SAMSUNG SAMSUNG 1RF9511 IRF9512 IRF9513 SAMSUNG SAMSUNG SAMSUNG 1RF9520 IRF9521 IRF9522 IRF9523 IRF953Ü IRF9531 IRF9532 IRF9533 IRF954Q IRF9541 íR F 9 542


    OCR Scan     		PDF -25cC) IRF9240 IRFS241 25F9542 O-220 IRF9543 IRF961G IRF9612 1RF9620 1RF9540 1RF9622 IRF9532 IRF9522 IRF9523 IRF9611 IRF9630 samsung IRF9613

    irf9530

    Abstract: irf9532 JEDEC TO-263A IRF9531
    Text: H A F R F R IS S E M I C O N D U C T O R IRF9530, IRF9531, IRF9532, IRF9533, RF1S9530, RF1S9530SM 10A and -12A, -80V and -100V, 0.3 and 0.4 Ohm, P-Channel Power MOSFETs January 1998 Features Description • -10A and -12A, -80V and -100V These are P-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRF9530, IRF9531, IRF9532, IRF9533, RF1S9530, RF1S9530SM -100V, IRF9532 irf9530 JEDEC TO-263A IRF9531

    F9530

    Abstract: diode C339 IRF9530 C337 W 63 complementary of irf9530 C337 W IRF9530 complementary diode c341 IRF9532 IR 9530
    Text: HE 0 I 4A5S452 000 fl5âfl fi | Data Sheet No. PD-9.320F INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER IOR HEXFET TRANSISTORS IRFS530 IRF9531 P-Channel IRFS532 IRFS533 -100 Volt, 0.3 Ohm HEXFET T0-220AB Plastic Package Features: The HEXFET® technology is the key to International Rectifier’s


    OCR Scan     		PDF T0-220AB C-341 43S54S2 IRF9530, IRF9531, IRF9532, IRF9533 T-39-21 C-342 F9530 diode C339 IRF9530 C337 W 63 complementary of irf9530 C337 W IRF9530 complementary diode c341 IRF9532 IR 9530

    IRF9530 mosfet circuit diagram

    Abstract: IRF9530 mosfet irf9530 IRF9531 IRF9532 iaf9530 40C1 IRF9533 040c1 92CS-43262
    Text: Rugged Power MOSFETs File Number 2221 IRF9530, IRF9531 IRF9532, IRF9533 Avalanche-Energy-Rated P-Channel Power MOSFETs TE R M IN A L DIAGRAM -1 0 A , a n d -1 2 A , -6 0 V a n d -1 0 0 V rDsiom = 0 .3 0 Q a n d 0 .4 0 0 Features: • S ingle pulse avalanche e n ergy rated


    OCR Scan     		PDF IRF9530, IRF9531 IRF9532, IRF9533 -100V 92CS-43262 IRF9531, IRF9532 IRF9533 IRF9530 mosfet circuit diagram IRF9530 mosfet irf9530 IRF9531 iaf9530 40C1 040c1 92CS-43262

    f9530

    Abstract: No abstract text available
    Text: *f*53S IRF9530, IRF9531, IRF9532, IRF9533, RF1S9530, RF1S9530SM 10A and -12A, -80V and -100V, 0.3 and 0.4 Ohm, P-Channel Power MOSFETs January 1998 Features Description • -10A and -12A, -80V and -100V • High Input Impedance These are P-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRF9530, IRF9531, IRF9532, IRF9533, RF1S9530, RF1S9530SM -100V, -100V f9530

    GG44

    Abstract: 0P295 OP295
    Text: □ Dual/Quad Rail-to-Rail Operational Amplifiers 0P295/0P495 ANALOG DEVICES PIN CONN ECTIO N S FEATUR ES Rail-to-Rail Output Swing Single-Supply Operation: +3 V to 36 V Low Offset Voltage: 300 n-V Gain Bandwidth Product: 75 kHz High Open-Loop Gain: 1000 V/mV


    OCR Scan     		PDF 0P295/0P495 16-Lead 14-Lead OP-495 09E-14 IE-13 GG44 0P295 OP295

    Untitled

    Abstract: No abstract text available
    Text: P-CHANNEL POWER MOSFETS IRF9530/9531 FEATURES TO-220 • Lower R d s <on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		PDF IRF9530/9531 O-220 IRF9530 -100V IRF9531

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    SSP6N60

    Abstract: SSP5N70 IRF9511 IRF9Z34 ssp5n80 ssp7n55 IRF9521 SSP4N70 SSP3N70 IRF9631
    Text: MOSFETs FUNCTION GUIDE 10-220 N-CHANNEL Continued Part Number SSP4N55 SSP6N55 BVossfV) lD(onj(A) RDs(on)(8) R0jc(K/W) PDfWatt) 550 4.00 6.00 2.500 1.67 1.00 75 125 0.90 140 302 307 2.500 1.800 1.67 1.200 0.90 75 125 140 302 307 5.000 3.500 2.500 1.67 75 125


    OCR Scan     		PDF SSP4N55 SSP6N55 SSP7N55 SSP4N60 SSP6N60 SSP7N60 SSP3N70 SSP4N70 SSP5N70 SSP3N80 IRF9511 IRF9Z34 ssp5n80 IRF9521 IRF9631

    1RF9130

    Abstract: L 9132 diode 9532 F913 IR 9530 irf 131 on irfp9131 IRF9130-2
    Text: '"7964142 " S AM S U N G SEMICONDUCTO nhHJ,4d UUU54US 7 mFSi 30/913179132/9133 ^ 1RFP9130/9131 /9132/9133 IRF9530/9531Z9532/9533 Preliminary Specifications P -C H A N N E L T a -1 0 0 Volt, 0.30 Ohm SFET 0D0S40S ? PRODUCT SUMMARY Part Number Vus RoS on Id


    OCR Scan     		PDF 1RFP9130/9131 IRF9530/9531Z9532/9533 UUU54US 0D0S40S FP9130, FP9131, IRF9531 IRF/IRFP9132. FP9133, 00GS435 1RF9130 L 9132 diode 9532 F913 IR 9530 irf 131 on irfp9131 IRF9130-2

    Untitled

    Abstract: No abstract text available
    Text: y IN T E G R A T E D C IR C U IT B UNITRODE High Efficiency Regulator Controller DESCRIPTION The U C 1 8 3 5 /6 fa m ilie s of linear controllers, packaged in 8-pin m ini-dips, are optim ized fo r the design of low cost, low dropout, linear regulators. U sing an external pass elem ent,


    OCR Scan     		PDF TIP30 D41D4 TIP32 D45C2 D45H5 MJE6040 TIP36 2N6666* TIP36 2N6648*

    1RF9540

    Abstract: IRF9141 IRF9142 IRF9510 IRF9523 IRF9612 IRF9613 IRF9540 IRF9541 IRF9620
    Text: - 25 6 - m a tt f m ± t Vg s t Vd s or Vd g % V (V) « Æ n fê (Ta=25^) Ig s s Pd Id * /CH * /CH (A) (W) V g s th) Id s s min (nA) Vg s (V) (UA) Vd s (V) (V) max (V) % Id (nA) Í# F Ds(on) Vd s = Vg s te (Ta=25t) b(Qn) Ciss g fs Coss Crss ft JE m m V g s =0


    OCR Scan     		PDF IRF9540 O-220AB IRF9541 F9542 O-220 IRF9543 IRF961G 1RF9540 IRF9141 IRF9142 IRF9510 IRF9523 IRF9612 IRF9613 IRF9620

    1rf730

    Abstract: IRF9513 IRF9521 irfbf30 IRFBG30 THOMSON DISTRIBUTOR 58e d IRF9511 IRF9523 IRFBC30 IRFBE32
    Text: THO d SO N/ D I S T R I B U T O R SflE D • T02t.ñ73 0 D D S Ô D 2 52S ■ International Rectifier TCSK HEXFET Power MOSFETs Plastic Insertable Package TO-220 N-Channel >DM Pu'*« Drain Current Amps Pp Max Power Dissipation (Watts) 1.7 2.0 2.8 3.3 4.5


    OCR Scan     		PDF O-220 IRF712 T0-22QAB IRF710 IRF722 IRF720 IRF732 IRF730 IRF742 IRF740 1rf730 IRF9513 IRF9521 irfbf30 IRFBG30 THOMSON DISTRIBUTOR 58e d IRF9511 IRF9523 IRFBC30 IRFBE32

    p12p10

    Abstract: IRF9530* p-channel power MOSFET 2N6898 Power MOSFETs Field-Effect Transistors IRFP9140/P9141 irf9640 mosfet IRF9530 P-channel power p-channel irfp9240
    Text: - POWER MOSFETs 5 P-CHANNEL POWER MOSFETs PAGE 2N6804 Avalanche Energy Rated P-Channel Power M OSFET. 5-3 2N6849 Avalanche Energy Rated P-Channel Power MOSFET. 5-8 2N6851


    OCR Scan     		PDF 2N6804 2N6849 2N6851 2N6895 2N6896 2N6897 2N6898 IRF9130, IRF9131, IRF9132, p12p10 IRF9530* p-channel power MOSFET Power MOSFETs Field-Effect Transistors IRFP9140/P9141 irf9640 mosfet IRF9530 P-channel power p-channel irfp9240

    IRF 544 N MOSFET

    Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
    Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no


    OCR Scan     		PDF