IRF9640
Abstract: RF1S9640 TA17522 IRF9641 IRF9642 IRF9643 RF1S9640SM TB334 TO-220aB 11A
Text: IRF9640, IRF9641, IRF9642, IRF9643, RF1S9640, RF1S9640SM Semiconductor -9A and -11A, -150V and -200V, 0.5 and 0.7 Ohm, P-Channel Power MOSFETs December 1997 Features Description • -9A and -11A, -150V and -200V These are P-Channel enhancement mode silicon-gate
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IRF9640,
IRF9641,
IRF9642,
IRF9643,
RF1S9640,
RF1S9640SM
-150V
-200V,
-200V
IRF9640
RF1S9640
TA17522
IRF9641
IRF9642
IRF9643
RF1S9640SM
TB334
TO-220aB 11A
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IRF9240
Abstract: IRF9241 Harris Semiconductor irf9240
Text: IRF9240, IRF9241, IRF9242, IRF9243 S E M I C O N D U C T O R -9A and -11A, -150V and -200V, 0.50 and 0.70 Ohm, P-Channel Power MOSFETs January 1998 Features Description • -9A and -11A, -150V and -200V These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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PDF
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IRF9240,
IRF9241,
IRF9242,
IRF9243
-150V
-200V,
TA17522.
IRF9240
IRF9241
Harris Semiconductor irf9240
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IRF9640 equivalent
Abstract: irf9640 pdf switch IRF9640 transistor IRF9640 datasheet irf9640 mosfet RF1S9640 RF1S9640SM RF1S9640SM9A TA17522 TB334
Text: IRF9640, RF1S9640SM Data Sheet 11A, 200V, 0.500 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon-gate power field-effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode
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Original
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PDF
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IRF9640,
RF1S9640SM
TA17522.
IRF9640 equivalent
irf9640 pdf switch
IRF9640
transistor IRF9640
datasheet irf9640 mosfet
RF1S9640
RF1S9640SM
RF1S9640SM9A
TA17522
TB334
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IRF9640
Abstract: IRF9642 RF1S9640SM IRF9643 IRF9641
Text: S E M I C O N D U C T O R IRF9640, IRF9641, IRF9642, IRF9643, RF1S9640, RF1S9640SM -9A and -11A, -150V and -200V, 0.5 and 0.7 Ohm, P-Channel Power MOSFETs December 1997 Features Description • -9A and -11A, -150V and -200V These are P-Channel enhancement mode silicon-gate
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Original
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PDF
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IRF9640,
IRF9641,
IRF9642,
IRF9643,
RF1S9640,
RF1S9640SM
-150V
-200V,
TA17522.
199st
IRF9640
IRF9642
RF1S9640SM
IRF9643
IRF9641
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IRFP9240
Abstract: TA17522
Text: IRFP9240 Data Sheet January 2002 12A, 200V, 0.500 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of
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PDF
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IRFP9240
IRFP9240
TA17522
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IRF9240
Abstract: TA17522 TB334
Text: IRF9240 Data Sheet February 1999 -11A, -200V, 0.500 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of
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Original
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PDF
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IRF9240
-200V,
TA17522.
-200V
IRF9240
TA17522
TB334
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IRF9640
Abstract: RF1S9640 RF1S9640SM RF1S9640SM9A TA17522 TB334
Text: IRF9640, RF1S9640SM Data Sheet Title F96 1S9 0SM bt A, 0V, 00 m, 11A, 200V, 0.500 Ohm, P-Channel Power MOSFETs Features These are P-Channel enhancement mode silicon-gate power field-effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a
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Original
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PDF
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IRF9640,
RF1S9640SM
TA17522.
TB334,
IRF9640
O-220AB
IRF9640
RF1S9640
RF1S9640SM
RF1S9640SM9A
TA17522
TB334
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65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
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PDF
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1-888-INTERSIL
MS-012AA
MO-153AA
RF1K49090
RF1K49093
RF1K49092
ITF87056DQT
ITF87072DK8T
ITF87008DQT
RF1K49223
65e9 transistor
transistor 75307D
Transistor 65e8
SD MOSFET DRIVE DATASHEET 4468 8 PIN
G40N60
RHR15120 equivalent
10n120bnd
76107d
transistor 76121D
emerson three phase dc motor driver service note
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IRF9640
Abstract: RF1S9640 RF1S9640SM RF1S9640SM9A TA17522 TB334
Text: IRF9640, RF1S9640SM Data Sheet 11A, 200V, 0.500 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon-gate power field-effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode
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Original
|
PDF
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IRF9640,
RF1S9640SM
TA17522.
IRF9640
RF1S9640
RF1S9640SM
RF1S9640SM9A
TA17522
TB334
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irfp9240
Abstract: IRFP9243
Text: IRFP9240, IRFP9241, IRFP9242, IRFP9243 S E M I C O N D U C T O R -10A and -12A, -200V and -150V, 0.50 and 0.70 Ohm, P-Channel Power MOSFETs December 1997 Features Description • -10A and -12A, -200V and -150V These are P-Channel enhancement mode silicon gate
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Original
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PDF
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IRFP9240,
IRFP9241,
IRFP9242,
IRFP9243
-200V
-150V,
TA17522.
199st
irfp9240
IRFP9243
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IRFP9240
Abstract: IRFP9
Text: IRFP9240 Data Sheet July 1999 12A, 200V, 0.500 Ohm, P-Channel Power MOSFET Features This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of
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Original
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PDF
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IRFP9240
TA17522.
IRFP9240
IRFP9
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TA17522
Abstract: IRFP9240
Text: IRFP9240 Data Sheet July 1999 12A, 200V, 0.500 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of
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Original
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PDF
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IRFP9240
TA17522
IRFP9240
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IRF9640
Abstract: No abstract text available
Text: H AFRFRIS S E M I C O N D U C T O R IRF9640, IRF9641, IRF9642, IRF9643, RF1S9640, RF1S9640SM -9A and -11 A, -150V and -200V, 0.5 and 0.7 Ohm, P-Channel Power MOSFETs December 1997 Features Description • -9A a n d -11 A,-150V and-200V These are P-Channel enhancem ent mode silicon-gate
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OCR Scan
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PDF
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IRF9640,
IRF9641,
IRF9642,
IRF9643,
RF1S9640,
RF1S9640SM
-150V
-200V,
and-200V
IRF9640
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Untitled
Abstract: No abstract text available
Text: IRF9240, IRF9241, IRF9242, IRF9243 HARRIS S E M I C O N D U C T O R -9A and -11A, -150V and -200V, 0.50 and 0.70 Ohm, P-Channel Power MOSFETs January 1998 Features Description • - 9A and -11 A, -150V and -200V • High Input Im pedance These are P-Channel enhancement mode silicon gate
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OCR Scan
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PDF
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IRF9240,
IRF9241,
IRF9242,
IRF9243
-150V
-200V,
TA17522.
RF9240,
RF9241,
RF9242,
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IRF9640
Abstract: IRF1S9640 IIRF9640 IRF9643 IRF9642 IRF9641
Text: HARRIS S E M IC O N D U C T O R IRF9640, IRF9641, IRF9642, IRF9643, RF1S9640, RF1S9640SM -9A and -11A, -150V and -200V, 0.5 and 0.7 Ohm, P-Channel Power MOSFETs December 1997 Features Description • -9A and -11 A, -150V and -200V These are P-Channel enhancement mode silicon-gate
|
OCR Scan
|
PDF
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IRF9640,
IRF9641,
IRF9642,
IRF9643,
RF1S9640,
RF1S9640SM
-150V
-200V,
TA17522.
IRF9640
IRF1S9640
IIRF9640
IRF9643
IRF9642
IRF9641
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irf9241
Abstract: No abstract text available
Text: H a r r i IRF9240, IRF9241, IRF9242,1RF9243 s s e m i c o n d u c t o r -9A and -11 A, -150V and -200V, 0.50 and 0.70 Ohm, P-Channel Power MOSFETs January 1998 Features Description • -9A a n d -11 A,-150V and-200V • High Input Impedance These are P-Channel enhancement mode silicon gate
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OCR Scan
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PDF
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IRF9240,
IRF9241,
IRF9242
1RF9243
-150V
-200V,
and-200V
IRF9240
1RF9241,
irf9241
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IRFP9240
Abstract: TA17522 irfp9243
Text: IRFP9240, IRFP9241, IRFP9242, IRFP9243 H a rris -10A and -12A, -200V and -150V, 0.50 and 0.70 Ohm, P-Channel Power MOSFETs December 1997 Features Description • -10A and -12A, -200V and -150V • High Input Impedance These are P-Channel enhancement mode silicon gate
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OCR Scan
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PDF
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IRFP9240,
IRFP9241,
IRFP9242,
IRFP9243
-200V
-150V,
TA17522.
RFP9240,
RFP9241,
RFP9242,
IRFP9240
TA17522
irfp9243
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