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    RFP3055 Search Results

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    RFP3055 Price and Stock

    onsemi RFP3055

    MOSFET N-CH 60V 12A TO220-3
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    DigiKey RFP3055 Tube
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    onsemi RFP3055LE

    MOSFET N-CH 60V 11A TO220-3
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    DigiKey RFP3055LE Tube
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    Harris Semiconductor RFP3055

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    Bristol Electronics RFP3055 45
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    Quest Components RFP3055 15
    • 1 $39.98
    • 10 $37.981
    • 100 $35.982
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    RFP3055 115
    • 1 $2.784
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    • 100 $1.392
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    Harris Semiconductor RFP3055RLE

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    Bristol Electronics RFP3055RLE 172 2
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    Quest Components RFP3055RLE 137
    • 1 $3.51
    • 10 $3.51
    • 100 $1.755
    • 1000 $1.638
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    Fairchild Semiconductor Corporation RFP3055LE

    MOSFET Transistor, N-Channel, TO-220AB
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    Quest Components RFP3055LE 100
    • 1 $0.66
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    • 100 $0.44
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    RFP3055 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Type PDF
    RFP3055 Fairchild Semiconductor 12A, 60V, 0.150 ?, N-Channel Power MOSFETs Original PDF
    RFP3055 Harris Semiconductor 12A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs (MegaFETs) Original PDF
    RFP3055 Intersil 12A, 60V, 0.150 ?, N-Channel Power MOSFETs Original PDF
    RFP3055 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    RFP3055LE Fairchild Semiconductor 11A, 60V, 0.107 ?, Logic Level, N-Channel Power Original PDF
    RFP3055LE Harris Semiconductor 12A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs Original PDF
    RFP3055LE Intersil 11A, 60V, 0.107 ?, Logic Level, N-Channel Power MOSFETs Original PDF
    RFP3055LE Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    RFP3055RLE Toshiba Power MOSFETs Cross Reference Guide Original PDF
    RFP3055RLE Intersil Obsolete Product Datasheet Scan PDF
    RFP3055RLE Unknown Shortform Datasheet & Cross References Data Short Form PDF

    RFP3055 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FD3055

    Abstract: Fp3055 IS433 4078 relay RFP3055 TB334 AN7254 RFD3055 RFD3055SM RFD3055SM9A
    Text: RFD3055, RFD3055SM, RFP3055 Data Sheet July 1999 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs • 12A, 60V Formerly developmental type TA49082. • rDS ON = 0.150Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve


    Original     		PDF RFD3055, RFD3055SM, RFP3055 TA49082. 175oC TB334 FD3055 Fp3055 IS433 4078 relay RFP3055 TB334 AN7254 RFD3055 RFD3055SM RFD3055SM9A

    FD3055

    Abstract: fp3055 TA49082 IS433 RFD3055
    Text: RFD3055, RFD3055SM, RFP3055 Data Sheet January 2002 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs Features • 12A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    Original     		PDF RFD3055, RFD3055SM, RFP3055 TA49082. TB334 RFD3055SM RFD3055SM9A136 RFD3055SM9A O-252 FD3055 fp3055 TA49082 IS433 RFD3055

    FD3055

    Abstract: Fp3055
    Text: RFD3055, RFD3055SM, RFP3055 Data Sheet Title FD3 5, D30 SM, P30 bt A, V, 50 m, anwer OSTs utho eyrds terrpoon, July 1999 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs Features These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF RFD3055, RFD3055SM, RFP3055 FD3055 Fp3055

    f3055l

    Abstract: FP3055LE f3055 Fp3055 FP3055L RFD3055LESM RFP3055LE RFD3055LE AN9321 RFD3055LESM9A
    Text: RFD3055LE, RFD3055LESM, RFP3055LE Data Sheet January 2002 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs Features • 11A, 60V These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes


    Original     		PDF RFD3055LE, RFD3055LESM, RFP3055LE TA49158. f3055l FP3055LE f3055 Fp3055 FP3055L RFD3055LESM RFP3055LE RFD3055LE AN9321 RFD3055LESM9A

    FD3055

    Abstract: IS433 FD3055 HARRIS TA49082 mosfet motor dc 48v AN7254 AN7260 RFD3055 RFD3055SM RFP3055
    Text: RFD3055, RFD3055SM RFP3055 S E M I C O N D U C T O R 12A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs MegaFETs February 1994 Features Packaging • 12A, 60V JEDEC TO-220AB TOP VIEW DRAIN (FLANGE) • rDS(ON) = 0.150Ω • Temperature Compensating PSPICE Model


    Original     		PDF RFD3055, RFD3055SM RFP3055 O-220AB 175oC O-251AA RFD3055SM RFP3055 1-800-4-HARRIS FD3055 IS433 FD3055 HARRIS TA49082 mosfet motor dc 48v AN7254 AN7260 RFD3055

    FD3055

    Abstract: IS433 Fp3055 RFP3055 TB334 AN7254 RFD3055 RFD3055SM RFD3055SM9A
    Text: RFD3055, RFD3055SM, RFP3055 Data Sheet January 2002 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs Features • 12A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    Original     		PDF RFD3055, RFD3055SM, RFP3055 TA49082. FD3055 IS433 Fp3055 RFP3055 TB334 AN7254 RFD3055 RFD3055SM RFD3055SM9A

    f3055l

    Abstract: FP3055LE f3055 RFP3055LE
    Text: RFD3055LE, RFD3055LESM, RFP3055LE Data Sheet Title FD3 5L, D30 LSM November 1999 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs Features These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes


    Original     		PDF RFD3055LE, RFD3055LESM, RFP3055LE f3055l FP3055LE f3055 RFP3055LE

    Untitled

    Abstract: No abstract text available
    Text: RFP3055RLE Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)10 I(D) Max. (A)12 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)40 Minimum Operating Temp (øC)


    Original     		PDF RFP3055RLE

    Untitled

    Abstract: No abstract text available
    Text: RFP3055 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V) I(D) Max. (A)30# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)53# Minimum Operating Temp (øC)-55õ


    Original     		PDF RFP3055

    fd3055

    Abstract: No abstract text available
    Text: RFD3055, RFD3055SM, RFP3055 Data Sheet January 2002 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs Features • 12A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    Original     		PDF RFD3055, RFD3055SM, RFP3055 TA49082. fd3055

    f3055l

    Abstract: f3055 FP3055LE f3055l datasheet AN9322 Fp3055 RFP3055LE datasheet fp3055le N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V RFD3055LE
    Text: RFD3055LE, RFD3055LESM, RFP3055LE Data Sheet November 1999 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs • 11A, 60V Formerly developmental type TA49158. • rDS ON = 0.107Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve


    Original     		PDF RFD3055LE, RFD3055LESM, RFP3055LE TA49158. TB334 f3055l f3055 FP3055LE f3055l datasheet AN9322 Fp3055 RFP3055LE datasheet fp3055le N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V RFD3055LE

    f3055l

    Abstract: FP3055LE f3055 Fp3055 RFD3055LESM9A RFP3055 RFD3055LESM AN7254 RFD3055LE RFP3055LE
    Text: LOGIC LEVEL POWER MOSFET DATA SHEETS RFD3055LE, RFD3055LESM, RFP3055LE S E M I C O N D U C T O R 12A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC TO-220AB • 12A, 60V SOURCE DRAIN


    Original     		PDF RFD3055LE, RFD3055LESM, RFP3055LE O-220AB O-251AA RFP3055LE 1e-30 06e-3 f3055l FP3055LE f3055 Fp3055 RFD3055LESM9A RFP3055 RFD3055LESM AN7254 RFD3055LE

    FP3055LE

    Abstract: f3055l
    Text: RFD3055LE, RFD3055LESM, RFP3055LE Data Sheet January 2002 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs Features • 11A, 60V These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes


    Original     		PDF RFD3055LE, RFD3055LESM, RFP3055LE TA49158. FP3055LE f3055l

    F3055L

    Abstract: FP3055LE Fp3055 f3055 AN9321 RFD3055LE RFD3055LESM RFD3055LESM9A RFP3055LE TB334
    Text: RFD3055LE, RFD3055LESM, RFP3055LE Data Sheet January 2002 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs Features • 11A, 60V These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes


    Original     		PDF RFD3055LE, RFD3055LESM, RFP3055LE TA49158. F3055L FP3055LE Fp3055 f3055 AN9321 RFD3055LE RFD3055LESM RFD3055LESM9A RFP3055LE TB334

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    Complementary MOSFETs buz11

    Abstract: irfd120 Power MOSFET Selection Guide HRF3205 MOSFET Selection Guide IRFP440 BUZ71 IRFD120 HRF3205 equivalent IRF610 complementary IRFD110
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 Complementary MOSFETs buz11 irfd120 Power MOSFET Selection Guide HRF3205 MOSFET Selection Guide IRFP440 BUZ71 IRFD120 HRF3205 equivalent IRF610 complementary IRFD110

    12SnOFC

    Abstract: BQ37 PMC-90 PMC-90 leadframe material MKT-TO220B03 FDP3672 HRF3205 equivalent mosfet number Tamac4 a105 transistor HRF3205 equivalent
    Text: Date Created: 1/9/2004 Date Issued: 2/13/2004 PCN # 20040204 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will


    Original     		PDF HUF75343P3 HUF75542P3 HUF75631P3 HUF75645P3 HUF75939P3 HUF76107P3 HUF76132P3 HUF76143P3 HUF76419P3 HUF76432P3 12SnOFC BQ37 PMC-90 PMC-90 leadframe material MKT-TO220B03 FDP3672 HRF3205 equivalent mosfet number Tamac4 a105 transistor HRF3205 equivalent

    HRF3205 equivalent

    Abstract: HUF75343S3 RFP70N06 100C BUZ11 HUF75344P3 HUF75329D3ST RFD16N05LSM9A
    Text: Date Created: 3/29/2004 Date Issued: 4/6/2004 PCN # 20041001-A DESIGN/PROCESS CHANGE NOTIFICATION - FINAL Reference FCST PCN number 20030402-A. This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


    Original     		PDF 0041001-A 0030402-A. RFD14N05 RFD14N05LSM9A RFD16N05 RFD16N05SM RFD3055LE RFD3055SM RFG70N06 RFP45N06 HRF3205 equivalent HUF75343S3 RFP70N06 100C BUZ11 HUF75344P3 HUF75329D3ST RFD16N05LSM9A

    f3055l

    Abstract: FP3055LE
    Text: ? *3 2 £ RFD3055LE, RFD3055LESM, RFP3055LE 12A, 60V, 0.150 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs September 1998 Features Description • 12A, 60V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature


    OCR Scan     		PDF RFD3055LE, RFD3055LESM, RFP3055LE 150i2 1e-30 06e-3 22e-7) 48e-3 77e-5) 55e-3 f3055l FP3055LE

    f3055l

    Abstract: FP3055LE u603 RFP3055LE TA49158
    Text: RFD3055LE, RFD3055LESM, RFP3055LE inter«! D a ta S h e e t N o vem b er 1999 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs F ile N u m b e r 4 0 4 4 .3 Features • 11 A, 60V These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process


    OCR Scan     		PDF RFD3055LE, RFD3055LESM, RFP3055LE TA49158. 107C2 6-S26 AN7260. f3055l FP3055LE u603 RFP3055LE TA49158

    FD3055

    Abstract: Fp3055
    Text: interrii RFD3055, RFD3055SM, RFP3055 D a ta S h e e t 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power J u ly 1 9 9 9 F ile N u m b e r 3648.2 Features •


    OCR Scan     		PDF RFD3055, RFD3055SM, RFP3055 TA49082. AN7260. FD3055 Fp3055

    IS433

    Abstract: FD3055 RFP3055
    Text: RFD3055, RFD3055SM RFP3055 C S JHARRIS U J S E M I C O N D U C T O R 12A, 60V, Avalanche Rated, N-Channel Enhancem ent-M ode Power M OSFETs MegaFETs February 1994 Packaging Features JEDEC TO-220AB ’ VIEW • 12 A ,6 0 V • r DS{ON)= 0 .1 5 0 Q z_ uT o


    OCR Scan     		PDF RFD3055, RFD3055SM RFP3055 O-220AB O-251AA RFP3055 238e-9 1e-30 IS433 FD3055

    Untitled

    Abstract: No abstract text available
    Text: RFD3055, RFD3055SM, RFP3055 Semiconductor Data Sheet July 1999 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs File Number 3648.2 Features • 12A, 60V These are N-Channel enhancem ent mode silicon gate • rDS ON = 0.150i2 power field effect transistors. They are advanced power


    OCR Scan     		PDF RFD3055, RFD3055SM, RFP3055 150i2

    mosfets

    Abstract: Power MOSFETs MOSFET ESD Rated RFD14N05L
    Text: I- — POWER MOSFETsfS LOGIC LEVEL POWER MOSFETs PAGE


    OCR Scan     		PDF RFD3055LE, RFD3055LLSM, RFP3055LE RFD3N08L, RFD3N08LSM RFD14N05L, RFD14N05LSM, RFP14N05L RFD14N06L, RFD14N06LSM, mosfets Power MOSFETs MOSFET ESD Rated RFD14N05L