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    TA96 Search Results

    TA96 Result Highlights (4)

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    SIT5146AC-FK-33VTA9.600000 SiTime 1 to 60 MHz, ±0.5 to ±2.5 ppm Super-TCXO Datasheet
    SIT5146AC-FK033ITA9.600000 SiTime 1 to 60 MHz, ±0.5 to ±2.5 ppm Super-TCXO Datasheet
    SIT5146AC-FD-33VTA9.600000 SiTime 1 to 60 MHz, ±0.5 to ±2.5 ppm Super-TCXO Datasheet
    SIT5146AC-FK033JTA9.600000 SiTime 1 to 60 MHz, ±0.5 to ±2.5 ppm Super-TCXO Datasheet
    SF Impression Pixel

    TA96 Price and Stock

    Rochester Electronics LLC PZTA96T3

    SMALL SIGNAL BIPOLAR TRANSISTOR
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    DigiKey PZTA96T3 Bulk 16,000 761
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    Central Semiconductor Corp CMPTA96-TR-PBFREE

    TRANS PNP 450V 0.5A SOT23
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    Littelfuse Inc IXTA96P085T-TRL

    MOSFET P-CH 85V 96A TO263
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    DigiKey IXTA96P085T-TRL Cut Tape 8,242 1
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    IXTA96P085T-TRL Digi-Reel 8,242 1
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    Littelfuse Inc IXTA96P085T

    MOSFET P-CH 85V 96A TO263
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    DigiKey IXTA96P085T Tube 6,759 1
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    CoreStaff Co Ltd IXTA96P085T 270
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    onsemi PZTA96ST1G

    TRANS PNP 450V 0.5A SOT223
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    Rochester Electronics PZTA96ST1G 1,000 1
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    Find more TA96 price and stock on Findchips.com

    TA96 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TA96 EATON SWITCH ACCESS PUSH BUTTON PADLOCK ATTACHMENT FOR STOP BUTTON Original PDF

    TA96 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DF378F

    Abstract: DF103B HRP2540 NR231A single phase full controlled rectifier component list
    Text: HRP2540 December 2001 Power Rectifier/Power Surge Suppressor Features The HRP2540 TA9673 is a high forward current, high reverse energy controlled avalanche power rectifier. It uses an ion-implanted planar epitaxial construction. This device was designed for use as the output rectifier in the three


    Original     		PDF HRP2540 TA9673) DF378F DF103B HRP2540 NR231A single phase full controlled rectifier component list

    NR231A

    Abstract: DF378F DF103B single phase full controlled rectifier component list HRP2540
    Text: HRP2540 April 1995 File Number 2942.1 Power Rectifier/Power Surge Suppressor Features The HRP2540 TA9673 is a high forward current, high reverse energy controlled avalanche power rectifier. It uses an ion-implanted planar epitaxial construction. This device


    Original     		PDF HRP2540 TA9673) NR231A DF378F DF103B single phase full controlled rectifier component list HRP2540

    IRF620 application

    Abstract: TA9600 IRF620 TB334 transistor irf620
    Text: IRF620 Data Sheet June 1999 5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET • 5.0A, 200V Formerly developmental type TA9600. Ordering Information PACKAGE 1577.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,


    Original     		PDF IRF620 TA9600. IRF620 application TA9600 IRF620 TB334 transistor irf620

    DF103B

    Abstract: DF378F NR231A alternator rectifier rectifier three phase 40a HRP2540 single phase half controlled rectifier
    Text: HRP2540 April 1995 File Number 2942.1 Power Rectifier/Power Surge Suppressor Features The HRP2540 TA9673 is a high forward current, high reverse energy controlled avalanche power rectifier. It uses an ion-implanted planar epitaxial construction. This device


    Original     		PDF HRP2540 TA9673) O-220AB 25oC/W NR231A DF103B DF378F 09kgf DF103B DF378F NR231A alternator rectifier rectifier three phase 40a HRP2540 single phase half controlled rectifier

    DF378F

    Abstract: DF103B HRP2540 NR231A
    Text: HRP2540 April 1995 File Number 2942.1 Power Rectifier/Power Surge Suppressor Features The HRP2540 TA9673 is a high forward current, high reverse energy controlled avalanche power rectifier. It uses an ion-implanted planar epitaxial construction. This device


    Original     		PDF HRP2540 TA9673) O-220AB 25oC/W NR231A DF103B DF378F 09kgf DF378F DF103B HRP2540 NR231A

    ta143

    Abstract: Ferronics 21-110J AN47-127 AN47 AN-4745 AN47-48 an47fa AN47-93 Tektronix P6056 TELEDYNE PHILBRICK logarithmic
    Text: Application Note 47 August 1991 High Speed Amplifier Techniques A Designer’s Companion for Wideband Circuitry Jim Williams PREFACE This publication represents the largest LTC commitment to an application note to date. No other application note absorbed as much effort, took so long or cost so much.


    Original     		PDF gLTAN47 AN47-129 AN47-130 AN47-131 AN47-132 an47fa ta143 Ferronics 21-110J AN47-127 AN47 AN-4745 AN47-48 AN47-93 Tektronix P6056 TELEDYNE PHILBRICK logarithmic

    DF378F

    Abstract: DF103B NR231A rectifier three phase 40a alternator exploded view power circuit of three phase control rectifier HRP2540 washer lock Transient Voltage Suppression Devices, Harris
    Text: HRP2540 S E M I C O N D U C T O R Power Rectifier/Power Surge Suppressor April 1995 Features Package • Low Forward Voltage Drop 1.1V Max at 100A JEDEC TO-220AB A • High Reverse Energy Capability K A • Controlled Maximum Avalanche Voltage (40V Max at 40A)


    Original     		PDF HRP2540 O-220AB TA9673) 25oC/W NR231A DF103B DF378F 09kgf DF378F DF103B NR231A rectifier three phase 40a alternator exploded view power circuit of three phase control rectifier HRP2540 washer lock Transient Voltage Suppression Devices, Harris

    ta66

    Abstract: uA733 an47fa Ferronics 21-110J 2n2369 avalanche lt1150 Tektronix P6056 linear technology an47 AN-4745 NE592
    Text: Application Note 47 August 1991 High Speed Amplifier Techniques A Designer’s Companion for Wideband Circuitry Jim Williams PREFACE This publication represents the largest LTC commitment to an application note to date. No other application note absorbed as much effort, took so long or cost so much.


    Original     		PDF LTAN47 AN47-129 AN47-130 AN47-131 AN47-132 an47fa ta66 uA733 Ferronics 21-110J 2n2369 avalanche lt1150 Tektronix P6056 linear technology an47 AN-4745 NE592

    IRFF220

    Abstract: TA9600 TB334
    Text: IRFF220 Data Sheet January 2002 3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET Features • 3.5A, 200V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFF220 IRFF220 TA9600 TB334

    transistor irf620

    Abstract: No abstract text available
    Text: IRF620 Data Sheet Title F62 bt 0A, 0V, 00 m, June 1999 5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRF620 TB334 IRF620 transistor irf620

    Untitled

    Abstract: No abstract text available
    Text: IRFF220 Data Sheet Title FF2 bt 5A, 0V, 00 m, March 1999 3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFF220

    IRF620

    Abstract: IRF621 TB334 IRF620 HARRIS IFR622 IFR623 IRF622 IRF623 TA9600 IRF623 harris
    Text: IRF620, IRF621, IRF622, IRF623 S E M I C O N D U C T O R 4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 4.0A and 5.0A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRF620, IRF621, IRF622, IRF623 IRF620 IRF621 TB334 IRF620 HARRIS IFR622 IFR623 IRF622 IRF623 TA9600 IRF623 harris

    ifr220

    Abstract: IFU220 JEDEC TO-251AA IRFR220 IRFU220 TA9600 TB334
    Text: IRFR220, IRFU220 Data Sheet 4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode


    Original     		PDF IRFR220, IRFU220 TA9600. ifr220 IFU220 JEDEC TO-251AA IRFR220 IRFU220 TA9600 TB334

    Untitled

    Abstract: No abstract text available
    Text: HRP2540 S em iconductor April 1995 File Number 2942.1 Power Rectifier/Power Surge Suppressor Features The HRP2540 TA9673 is a high forward current, high reverse energy controlled avalanche power rectifier. It uses an ion-implanted planar epitaxial construction. This device


    OCR Scan     		PDF HRP2540 TA9673) O-22QAB 1-25OC/W NR231A DF103B DF378F 09kgf

    DS96173

    Abstract: DS96175 DS96176 RS-422A DS96178
    Text: NATL SEMICOND {MEMORY} IDE D | b 5 □ 112 b Q G b E 4 L cî 3 | O to CO T -7 5 -4 5 -0 5 National Semiconductor 0> CO 1= > <o o> •Nj DS96173 / ¡x A 96173/D S 96175/ tA96175 RS-485/RS-422 Quad Differential Line Receivers General Description Features The DS96173/jiA96173 and DS96175/ iiA96175 are high


    OCR Scan     		PDF T-75-45-05 DS96173/Â A96173/DS96175/ A96175 RS-485/RS-422 DS96173/jiA96173 DS96175/ iiA96175 RS-485. DS96173//xA96173 DS96173 DS96175 DS96176 RS-422A DS96178

    f25n06l

    Abstract: F25N06 RFP2506L RFP25N06L an7254 TA9638
    Text: Logic-Level Power MOSFETs RFP25N06L File Number 2044 N-Cnannel Logic Level Power Field-Effect Transistors L2FET 25 A, 50 V - 60 V rDs(on) = 0.085 O Features: N-CHANNEL ENHANCEMENT MODE • Design optim ized fo r 5 volt gate drive ■ Can be driven directly from Q-MOS,


    OCR Scan     		PDF RFP25N06L RFP25N06L* CATOFP25N0GLCF2 92CS-37075 AN7254 AN7260. f25n06l F25N06 RFP2506L RFP25N06L TA9638

    germanium

    Abstract: kia 7208 KIA 7313 germanium transistor speaker protector
    Text: KOREA ELECTRONICS CO , LTD. KP—8111 PRODU CT GUIDE TRANSISTOR INTEGRATED CIRCUIT LIGHT-EMITTING DIODE DIODE KEC SEMICONDUCTOR MAXIMUM RATINGS v CEO USE lC Pc ELECTRICAL CHARACTERISTICS Ta = 25°C hFE TYPE (V) (mA) (mW) Vce (sat) MAX VCE lC (V) (mA) KTC I815/KTN 5014


    OCR Scan     		PDF I815/KTN 10I5/KTP 1923/KTN 380TM/KTN germanium kia 7208 KIA 7313 germanium transistor speaker protector

    MA96177

    Abstract: uA96177 A96177 RS-422A A96176 41sv
    Text: /uA9 6 1 7 7 • juA9 6 1 7 8 F A IR C H IL D Differential Bus Repeaters A Schlum berger C om pany Linear Division Interface Products Description Connection Diagram 8-Lead DIP Top View The (¿A96177 and fiA 9 6 1 78 Differential Bus Repeaters are m onolithic integrated devices each designed for one-way


    OCR Scan     		PDF /uA96177 juA96178 A96177 fiA96178 RS-485 RS-422A. /A96177 iA96178 fiA96177 MA96177 uA96177 RS-422A A96176 41sv

    Untitled

    Abstract: No abstract text available
    Text: w vys S IRFF220, IRFF221, IRFF222, IRFF223 S e m ico n d ucto r y y 3.0A and 3.5A, 150V to 200V, 0.8 and 1.2 Ohm, N-Channei Power MOSFETs January 1998 Features Description • 3.0A and 3.5A, 150V to 200V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRFF220, IRFF221, IRFF222, IRFF223

    Untitled

    Abstract: No abstract text available
    Text: ASSESS? RURG3010CC, RURG3015CC, RURG3020CC Aprii 1995 30A, 100V - 200V Ultrafast Dual Diodes Features Package • Ultrafast with Soft Recovery . <45ns • Operating Temperature. . . . +175°C • Reverse Voltage Up to . . ,200V JEDEC STYLE TO-247 ANODE 1


    OCR Scan     		PDF RURG3010CC, RURG3015CC, RURG3020CC O-247 URG3015CC TA9645) VFTR9645 1RTR9645

    Untitled

    Abstract: No abstract text available
    Text: P *3 3 S IRFR220, IRFR221, IRFR222, IRFU220, IRFU221, IRFU222 3.8A and 4.6A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 3.8A and 4.6A, 150V and 200V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRFR220, IRFR221, IRFR222, IRFU220, IRFU221, IRFU222 RFR220,

    Untitled

    Abstract: No abstract text available
    Text: IRF620 Semiconductor D ata S h eet June 1999 5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET 1577.3 Features • 5.0A, 200V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    OCR Scan     		PDF IRF620

    ifr220

    Abstract: IFU220 IRFU221 IRFU222 ifu221 IRFR222 IFR221 ta96 IRFR220 irfu220
    Text: IRFR220, IRFR221, IRFR222, IRFU220, IR FU221, IRFU222 H A R R IS SEMICONDUCTOR 3.8A and 4.6A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 3.8A and 4.6A, 150V and 200V These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRFR220, IRFR221, IRFR222, IRFU220, FU221, IRFU222 RFR220, RFR221, RFR222, ifr220 IFU220 IRFU221 IRFU222 ifu221 IRFR222 IFR221 ta96 IRFR220 irfu220

    SN75100

    Abstract: SN75100L CT070
    Text: SYSTEMS INTERFACE CIRCUITS TYPE SN75100L DUAL DIFFERENTIAL LINE RECEIVER S E R IE S 75 L IN E R E C E IV E R featuring High Input Impedance Fast Switching Speed Good Small-Signal Sensitivity T T L and D T L Compatible Outputs W ire-OR Output Capability description


    OCR Scan     		PDF SN75100L SN75100L SN75100 CT070