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Catalog Datasheet	MFG & Type	Document Tags	PDF
IRF620 Abstract: IRF621 TB334 IRF620 HARRIS IFR622 IFR623 IRF622 IRF623 TA9600 IRF623 harris Text: IRF620, IRF621, IRF622, IRF623 S E M I C O N D U C T O R 4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 4.0A and 5.0A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power	Original	IRF620, IRF621, IRF622, IRF623 IRF620 IRF621 TB334 IRF620 HARRIS IFR622 IFR623 IRF622 IRF623 TA9600 IRF623 harris	PDF
sgs*P381 Abstract: ISOWATT218 IGBT ISOWATT220 STLT20 MTP3055AFI SGSP381 IRFP453FI SGSP579 SGSP591 Text: SELECTION GUIDE BY PART NUMBER V BR DSS 9«s min (mho) max (PF) Page 70 75 75 75 35 8.00 3.00 4.00 4.00 4.00 700typ 2000 2000 2000 2000 159 163 167 173 167 30.00 20.00 12.00 19.00 19.00 75 35 75 75 78 4.00 4.00 2.70 4.00 4.00 2000 2000 2000 2000 2000 177	OCR Scan	P-220 ISOWATT220 O-220 O-220 STHI07N50 STHI07N50FI STHI10N50 STHI10N50FI sgs*P381 ISOWATT218 IGBT STLT20 MTP3055AFI SGSP381 IRFP453FI SGSP579 SGSP591	PDF
ISOWATT220 Abstract: MTP3055AFI IRF722FI IRFP453FI SGSP579 SGSP591 SGS35MA050D1 SGSP382 Text: SELECTION GUIDE BY PART NUMBER a Type V BR DSS R DS(on) 9fs ^iss min (mho) max (pF) Page 20.00 17.00 30.00 25.00 20.00 70 75 75 75 35 8.00 3.00 4.00 4.00 4.00 700typ 2000 2000 2000 2000 159 163 167 173 167 30.00 20.00 12.00 19.00 19.00 75 35 75 75 78 4.00	OCR Scan	STHI07N50 STHI07N50FI STHI10N50 STHI10N50FI O-220 ISOWATT22Û ISOWATT22Q ISOWATT220 MTP3055AFI IRF722FI IRFP453FI SGSP579 SGSP591 SGS35MA050D1 SGSP382	PDF
Untitled Abstract: No abstract text available Text: w vys S IRF620, IRF621, IRF622, IRF623 S em icon du cto r y y 4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channei Power MOSFETs January 1998 Features Description • 4.0A and 5.0A, 150V and 200V • High Input Impedance These are N-Channel enhancement mode silicon gate	OCR Scan	IRF620, IRF621, IRF622, IRF623 RF622,	PDF
irf620 Abstract: IRF620 HARRIS IFR622 1RF621 irf623 irf622 Text: IRF620, IRF621, IRF622, IRF623 h a r r is 4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 4.0A and 5.0A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power	OCR Scan	IRF620, IRF621, IRF622, IRF623 TA9600. RF621, RF622, RF623 irf620 IRF620 HARRIS IFR622 1RF621 irf623 irf622	PDF