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    IRFF220 Search Results

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    IRFF220 Price and Stock

    New Jersey Semiconductor Products, Inc. IRFF220

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IRFF220 2,583 1
    • 1 $19.2
    • 10 $19.2
    • 100 $16.9843
    • 1000 $15.744
    • 10000 $15.744
    		Buy Now

    New Jersey Semiconductor Products Inc IRFF220

    MOSFET Transistor, N-Channel, TO-205AF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRFF220 2,066
    • 1 $20.8
    • 10 $20.8
    • 100 $20.8
    • 1000 $16
    • 10000 $16
    		Buy Now

    IRFF220 Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRFF220 International Rectifier HEXFET Transistor Original PDF
    IRFF220 Intersil 3.5A, 200V, 0.800 ?, N-Channel Power MOSFET Original PDF
    IRFF220 Semelab N-Channel MOSFET in a Hermetically Sealed TO39 Metal Package Original PDF
    IRFF220 General Electric Power Transistor Data Book 1985 Scan PDF
    IRFF220 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFF220 International Rectifier TO-39 Package N-Channel HEXFET Scan PDF
    IRFF220 International Rectifier N-Channel Power MOSFET in a TO-39 Package, 200 Volts, 0.8 Ohm Scan PDF
    IRFF220 International Rectifier TO-39 N-Channel HEXFET Power MOSFETs Scan PDF
    IRFF220 Motorola Switchmode Datasheet Scan PDF
    IRFF220 Motorola European Master Selection Guide 1986 Scan PDF
    IRFF220 Motorola TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 Scan PDF
    IRFF220 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFF220 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFF220 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFF220 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRFF220 Unknown FET Data Book Scan PDF
    IRFF220 Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF
    IRFF220R Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFF220R International Rectifier Rugged Series Power MOSFETs - N-Channel Scan PDF
    IRFF220R Unknown Shortform Datasheet & Cross References Data Short Form PDF

    IRFF220 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF 260 N

    Abstract: IRFF220 JANTX2N6790 JANTXV2N6790
    Text: PD - 90427D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-205AF IRFF220 JANTX2N6790 JANTXV2N6790 REF:MIL-PRF-19500/555 200V, N-CHANNEL Product Summary Part Number IRFF220 BVDSS RDS(on) ID 200V 3.5A 0.80Ω T0-39 ® The HEXFET technology is the key to International


    Original     		PDF 90427D O-205AF) IRFF220 JANTX2N6790 JANTXV2N6790 MIL-PRF-19500/555 T0-39 IRFF220, JANTX2N6790, IRF 260 N IRFF220 JANTX2N6790 JANTXV2N6790

    Untitled

    Abstract: No abstract text available
    Text: PD - 90427D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-205AF IRFF220 JANTX2N6790 JANTXV2N6790 REF:MIL-PRF-19500/555 200V, N-CHANNEL Product Summary Part Number IRFF220 BVDSS RDS(on) ID 200V 3.5A 0.80Ω T0-39 ® The HEXFET technology is the key to International


    Original     		PDF 90427D O-205AF) IRFF220 JANTX2N6790 JANTXV2N6790 MIL-PRF-19500/555 T0-39 tNTXV2N6790 O-205AF

    2N6790

    Abstract: IRFF220
    Text: 2N6790 IRFF220 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET ENHANCEMENT MODE 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 0.89 max. (0.035) 12.70 (0.500) min. FEATURES 0.41 (0.016) 0.53 (0.021) dia. • REPETITIVE AVALANCHE RATING


    Original     		PDF 2N6790 IRFF220 O-205AF) 2N6790 IRFF220

    Untitled

    Abstract: No abstract text available
    Text: 2N6790 IRFF220 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET ENHANCEMENT MODE 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 0.89 max. (0.035) 12.70 (0.500) min. FEATURES 0.41 (0.016) 0.53 (0.021) dia. • REPETITIVE AVALANCHE RATING


    Original     		PDF 2N6790 IRFF220 O-205AF)

    IRFF220

    Abstract: TA9600 TB334
    Text: IRFF220 Data Sheet January 2002 3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET Features • 3.5A, 200V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFF220 IRFF220 TA9600 TB334

    Untitled

    Abstract: No abstract text available
    Text: IRFF220 Data Sheet Title FF2 bt 5A, 0V, 00 m, March 1999 3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFF220

    IRFF220

    Abstract: No abstract text available
    Text: IRFF220 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET.


    Original     		PDF IRFF220 O205AF) 11-Oct-02 IRFF220

    Untitled

    Abstract: No abstract text available
    Text: ^s.mi-dondu.cto'L Lp 10ducts., Una 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 IRFF220 Absolute Maximum Ratings Parameter ID @ VGS = iov, TC = 25°c ID @ VGS = iov, TC = ioo°c IDM PD @ TC = 25°c


    Original     		PDF 10ducts. IRFF220

    IRFF223

    Abstract: No abstract text available
    Text: IRFF220, IRFF221, IRFF222, IRFF223 S E M I C O N D U C T O R 3.0A and 3.5A, 150V to 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 3.0A and 3.5A, 150V to 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRFF220, IRFF221, IRFF222, IRFF223 TA9600. IRFF223

    IRFF220

    Abstract: TA9600 TB334
    Text: IRFF220 Data Sheet March 1999 3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET • 3.5A, 200V • rDS ON = 0.800Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics


    Original     		PDF IRFF220 TB334 TA9600. IRFF220 TA9600 TB334

    IRFF220

    Abstract: JANTX2N6790 JANTXV2N6790 JANTX2N6 JANTXV2N
    Text: PD - 90427C IRFF220 JANTX2N6790 JANTXV2N6790 REF:MIL-PRF-19500/555 200V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF220 BVDSS 200V RDS(on) 0.80Ω ID 3.5A  The HEXFET technology is the key to International


    Original     		PDF 90427C IRFF220 JANTX2N6790 JANTXV2N6790 MIL-PRF-19500/555 O-205AF) IRFF220 JANTX2N6790 JANTXV2N6790 JANTX2N6 JANTXV2N

    IRF460

    Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
    Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,


    Original     		PDF 30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065

    Untitled

    Abstract: No abstract text available
    Text: w vys S IRFF220, IRFF221, IRFF222, IRFF223 S e m ico n d ucto r y y 3.0A and 3.5A, 150V to 200V, 0.8 and 1.2 Ohm, N-Channei Power MOSFETs January 1998 Features Description • 3.0A and 3.5A, 150V to 200V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRFF220, IRFF221, IRFF222, IRFF223

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information IRFF220 IRFF223 Sm all-Signal Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS N-CHANNEL TM O S PO W ER FET s rDS on| = 0.8 OHM 200 V O LT S . . . d esig ne d fo r lo w volta g e , h ig h speed p o w e r sw itch in g


    OCR Scan     		PDF IRFF220 IRFF223

    IRFF223

    Abstract: IRFF222 IRFF220 IRFF221
    Text: -Standard Power MOSFETs File Number IRFF220, IRFF221, IRFF222, IRFF223 1889 N-Channel Enhancement-Mode Power Field-Effect Transistors 3.0A and 3.5A, 150V - 200V rDS oni = 0.80 and 1.20 N-CHANNEL ENHANCEMENT MODE o Features: • m


    OCR Scan     		PDF IRFF220, IRFF221, IRFF222, IRFF223 1RFF221, IRFF222 IRFF223 IRFF220 IRFF221

    Untitled

    Abstract: No abstract text available
    Text: • M3 D5 E7 1 0 0 5 4 15 0 T74 ■ 2 3 H A R R IS HAS IRFF220/221/222/223 IRFF220R/221R/222R/223R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features TQ-205AF • 3.0 A a n d 3.5 A , 1 5 0V - 2 0 0V • r D S on = ° - 8 f i an d


    OCR Scan     		PDF IRFF220/221/222/223 IRFF220R/221R/222R/223R TQ-205AF IRFF220, IRFF221, IRFF222, IRFF223 IRFF220R, IRFF221R, IRFF222R,

    FF220

    Abstract: No abstract text available
    Text: h a r r is IRFF220, IRFF221, IRFF222, IRFF223 3.0A and 3.5A, 150V to 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 3.0A and 3.5A, 150V to 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    OCR Scan     		PDF IRFF220, IRFF221, IRFF222, IRFF223 TA9600. RFF220, RFF221, RFF222, RFF223 FF220

    IRFF221R

    Abstract: IBFF220R IRFF220R IRFF222R IRFF223R 08c1 HI POWER 30A MOSFET
    Text: Rugged Power MOSFETs File N u m b e r 2026 IRFF220R, IRFF221R, IRFF222R, IRFF223R Avalanche Energy Rated N-Channel Power MOSFETs 3.0A and 3.5A, 150V-200V rDs on = 0.8 0 and 1.20 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated


    OCR Scan     		PDF IRFF220R, IRFF221R, IRFF222R, IRFF223R 50V-200V IRFF222R IRFF223R 92CS-42660 IRFF221R IBFF220R IRFF220R 08c1 HI POWER 30A MOSFET

    Untitled

    Abstract: No abstract text available
    Text: ¡2 HARRIS IRFF220/221/222/223 IRFF220R/221R/222R/223R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 F e a tu re s Package TQ-205AF • 3.0 A a n d 3.5 A , 1 5 0V - 2 0 0V • r D S on = ° - 8 n a n d 1 - 2 il • S in g le P ulse A v a la n c h e E n e rg y R a te d *


    OCR Scan     		PDF IRFF220/221/222/223 IRFF220R/221R/222R/223R TQ-205AF IRFF220, IRFF221, IRFF222, IRFF223 IRFF220R, IRFF221R, IRFF222R,

    TO-254

    Abstract: T0-204 IRF450 equivalent
    Text: CT'Sificonix .X J P in c o r p o r a te d Industry Standard Military MOSFETs Package Equivalent Commercial Part Number 0.18 75 T0-204 IRF130 542 9.0 0.40 75 T0-204 IRF230 542 400 5.5 1.0 75 TO-204 IRF330 542 500 4.5 1.5 75 TO-204 IRF430 542 Part Number V BRJDSS


    OCR Scan     		PDF 2N6756 2N6758 2N6760 2N6762 2N6764 2N6766 2N6768 2N6770 2N6788 2N6790 TO-254 T0-204 IRF450 equivalent

    1rfz44

    Abstract: MFE9200 1rfz30 IRFZ12 1RFZ22 VN10LP irfu9212 irfu9220 irfu9222 irfu9022
    Text: - /m Ta=25l3 Vd s or Vd g Vg s !l (V) (V) t £J € *± € % Pd Id Ig s s Vg s th) Idss * /CH * /CH (A) (nA) m Vg s (V) Vd s (V) C M A) min max (V) (V) ft % 245 Ciss g fs Coss Crss & *typ (A) Id (A) Vg s (V) *typ (S) (*typ) (*typ) (*typ) (max) (max) (max)


    OCR Scan     		PDF IRFZ20 O-220 IRFZ22 IRFZ30 IRFZ32 5TO-220 IRL510 1rfz44 MFE9200 1rfz30 IRFZ12 1RFZ22 VN10LP irfu9212 irfu9220 irfu9222 irfu9022

    2N6788 motorola

    Abstract: vmos vmos fet MFE910 n-channel vmos motorola MFE930 2N6659 2N6661 IRFF110 IRFF111
    Text: FIELD-EFFECT TRANSISTORS continued Small-Signal TMOS TMOS Power MOSFETs Pow er M O SFETS, M o to ro la tra d e m a rk T M O S , a re FET transistors with an oxide insulated gate which controls vertical c u rren t flow. This basic description fits a n um ber of structures and process titles


    OCR Scan     		PDF IRFF431 IRFF432 IRFF433 2N6782 2N6784 2N6786 2N6788 2N6790 2N6792 2N6794 2N6788 motorola vmos vmos fet MFE910 n-channel vmos motorola MFE930 2N6659 2N6661 IRFF110 IRFF111

    IRF09120

    Abstract: 251G FF323 IRFF310 F9122 IRFF130 IRF0120
    Text: - f M % tt ± $ H V ds or € Vg s T a = 2 5 l3 Id Po a Vgs th ) I dss I gs s m tf ï & ï Ds(on) Vd s = ’l ï (V) * /CH * /CH (A) (W) (nA) Vgs (V) C m A) V ds (V) m in max (V) (V) I d (on) C is s g fs Coss C rss $1- B m % V g s =0 (max) Id (mA) ♦ typ


    OCR Scan     		PDF IRFF310 O-205AF FF312 FF322 FF323 25RFF230 IRFF231 IRF09120 251G FF323 IRFF310 F9122 IRFF130 IRF0120

    Untitled

    Abstract: No abstract text available
    Text: IOR IRFF Series Devices IRFF Series Data Sheet T h e IR F F D a ta S h e e t d escrib es 19 d evices, 12 N -C h a n n e l and 7 P -C h a n n e l, all con tain ed in the T O -2 0 5 A F T O -3 9 p ac k a g e . T his d a ta s h e e t is a rra n g e d to show com m on tab u la r and g raphical


    OCR Scan     		PDF