75329D
Abstract: AN9321 HUF75329D3 HUF75329D3S HUF75329D3ST TB334
Text: HUF75329D3, HUF75329D3S Data Sheet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF75329D3,
HUF75329D3S
75329D
AN9321
HUF75329D3
HUF75329D3S
HUF75329D3ST
TB334
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75329G
Abstract: 75329P 75329S HUF75329G3 HUF75329P3 HUF75329S3S HUF75329S3ST TB334
Text: HUF75329G3, HUF75329P3, HUF75329S3S Data Sheet December 2001 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF75329G3,
HUF75329P3,
HUF75329S3S
75329G
75329P
75329S
HUF75329G3
HUF75329P3
HUF75329S3S
HUF75329S3ST
TB334
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75329p
Abstract: 75329G HUF75329P3 HUF75329S3ST TB334 75329S HUF75329G3 HUF75329S3S 75329
Text: HUF75329G3, HUF75329P3, HUF75329S3S Data Sheet January 2000 File Number 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs Features These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology
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HUF75329G3,
HUF75329P3,
HUF75329S3S
75329p
75329G
HUF75329P3
HUF75329S3ST
TB334
75329S
HUF75329G3
HUF75329S3S
75329
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Untitled
Abstract: No abstract text available
Text: HRFZ44N Data Sheet June 1999 49A, 55V, 0.022 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in
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HRFZ44N
TA75329or
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75329D
Abstract: AN9321 HUF75329D3 HUF75329D3S HUF75329D3ST TB334
Text: HUF75329D3, HUF75329D3S Data Sheet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF75329D3,
HUF75329D3S
75329D
AN9321
HUF75329D3
HUF75329D3S
HUF75329D3ST
TB334
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relay rs-5
Abstract: AN9322 HRFZ44N TB334 AN7254 AN7260 AN9321 135E3
Text: HRFZ44N Data Sheet June 1999 49A, 55V, 0.022 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in
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HRFZ44N
relay rs-5
AN9322
HRFZ44N
TB334
AN7254
AN7260
AN9321
135E3
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Untitled
Abstract: No abstract text available
Text: HUF75329D3S October 2013 Data Sheet N-Channel UltraFET Power MOSFET 55 V, 20 A, 26 mΩ Features • 20A, 55V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding
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HUF75329D3S
HUF75329D3S
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Untitled
Abstract: No abstract text available
Text: HUFA75329D3, HUFA75329D3S TM Data Sheet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUFA75329D3,
HUFA75329D3S
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75329p
Abstract: 75329G HUFA75329S3S TB334 75329S HUFA75329G3 HUFA75329P3 HUFA75329S3ST
Text: HUFA75329G3, HUFA75329P3, HUFA75329S3S Data Sheet June 2002 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUFA75329G3,
HUFA75329P3,
HUFA75329S3S
75329p
75329G
HUFA75329S3S
TB334
75329S
HUFA75329G3
HUFA75329P3
HUFA75329S3ST
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AN7254
Abstract: AN7260 AN9321 AN9322 HRFZ44N TB334
Text: HRFZ44N Data Sheet December 2001 49A, 55V, 0.022 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in
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HRFZ44N
AN7254
AN7260
AN9321
AN9322
HRFZ44N
TB334
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75329P
Abstract: 75329s 75329G HUF75329G3 HUF75329P3 HUF75329S3 HUF75329S3S HUF75329S3ST EIA rs 481 286
Text: HUF75329G3, HUF75329P3, HUF75329S3, HUF75329S3S S E M I C O N D U C T O R 42A, 55V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs August 1997 Features Description • 42A, 55V The HUF75329 N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced
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HUF75329G3,
HUF75329P3,
HUF75329S3,
HUF75329S3S
HUF75329
1-800-4-HARRIS
75329P
75329s
75329G
HUF75329G3
HUF75329P3
HUF75329S3
HUF75329S3S
HUF75329S3ST
EIA rs 481 286
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65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
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1-888-INTERSIL
MS-012AA
MO-153AA
RF1K49090
RF1K49093
RF1K49092
ITF87056DQT
ITF87072DK8T
ITF87008DQT
RF1K49223
65e9 transistor
transistor 75307D
Transistor 65e8
SD MOSFET DRIVE DATASHEET 4468 8 PIN
G40N60
RHR15120 equivalent
10n120bnd
76107d
transistor 76121D
emerson three phase dc motor driver service note
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75329P
Abstract: 75329G 75329S HUF75329G3 HUF75329P3 HUF75329S3 HUF75329S3S TB334
Text: HUF75329G3, HUF75329P3, HUF75329S3, HUF75329S3S S E M I C O N D U C T O R 42A, 55V, 0.025 Ohm, N-Channel, UltraFET Power MOSFETs February 1998 Features Description • 42A, 55V • Ultra Low On-Resistance, rDS ON = 0.025Ω • Diode Exhibits Both High Speed and Soft Recovery
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HUF75329G3,
HUF75329P3,
HUF75329S3,
HUF75329S3S
TB334,
HUF75329
1-800-4-HARRIS
75329P
75329G
75329S
HUF75329G3
HUF75329P3
HUF75329S3
HUF75329S3S
TB334
|
75329D
Abstract: HUF75329D3 AN9321 HUF75329D3S HUF75329D3ST TB334
Text: HUF75329D3, HUF75329D3S Data Sheet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF75329D3,
HUF75329D3S
71e-1
26e-2
HUF75329D
80e-3
00e-2
00e-3
60e-2
75329D
HUF75329D3
AN9321
HUF75329D3S
HUF75329D3ST
TB334
|
|
|
75329D
Abstract: AN7254 AN9321 AN9322 HUF75329D3 HUF75329D3S HUF75329D3ST TB334 RELAY TC1
Text: HUF75329D3, HUF75329D3S Data Sheet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF75329D3,
HUF75329D3S
75329D
AN7254
AN9321
AN9322
HUF75329D3
HUF75329D3S
HUF75329D3ST
TB334
RELAY TC1
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Untitled
Abstract: No abstract text available
Text: HUFA75329G3, HUFA75329P3, HUFA75329S3S TM Data Sheet November 2000 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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Original
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HUFA75329G3,
HUFA75329P3,
HUFA75329S3S
|
75329p
Abstract: 75329G 37E4 75329S HUF75329G3 HUF75329P3 HUF75329S3S HUF75329S3ST TB334 TO220 NMOS
Text: interrii HUF75329G3, HUF75329P3, HUF75329S3S January 2000 Data Sheet 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs -9 These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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OCR Scan
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PDF
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HUF75329G3,
HUF75329P3,
HUF75329S3S
75329p
75329G
37E4
75329S
HUF75329G3
HUF75329P3
HUF75329S3S
HUF75329S3ST
TB334
TO220 NMOS
|
HRFZ44N
Abstract: No abstract text available
Text: HRFZ44N Semiconductor Data Sheet June 1999 49A, 55V, 0.022 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in
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OCR Scan
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PDF
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HRFZ44N
O-220AB
HRFZ44N
|
75329p
Abstract: 75329G HUF75329G3
Text: in t e is il HUF75329G3, HUF75329P3, HUF75329S3S D a ta S h e e t J a n u a ry 2000 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology
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OCR Scan
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PDF
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HUF75329G3,
HUF75329P3,
HUF75329S3S
HUF7S329P3,
HUF7S329S3S
AN7254
AN7260.
75329p
75329G
HUF75329G3
|
Untitled
Abstract: No abstract text available
Text: HUF75329D3, HUF75329D3S Semiconductor Data Sheet June 1999 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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OCR Scan
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PDF
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HUF75329D3,
HUF75329D3S
13e-1
26e-2
HUF75329D
80e-3
00e-2
00e-3
60e-2
|
Untitled
Abstract: No abstract text available
Text: HUF75329D3, HUF75329D3S Semiconductor March 1999 Data Sheet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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OCR Scan
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PDF
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HUF75329D3,
HUF75329D3S
57e-2
13e-1
26e-2
HUF75329D
80e-3
00e-2
00e-3
|
75329s
Abstract: HUF75329P3 19407
Text: HUF75329G3, HUF75329P3, HUF75329S3, HUF75329S3S HARRIS S E M I C O N D U C T O R 42A, 55V, 0.025 Ohm, N-Channel, UltraFET Power MOSFETs February 1998 MM Features • 42A, 55V • Ultra Low On-Resistance, ros ON = 0.025(2 • Diode Exhibits Both High Speed and Soft Recovery
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OCR Scan
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PDF
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HUF75329G3,
HUF75329P3,
HUF75329S3,
HUF75329S3S
TB334,
HUF75329
1-800-4-HARRIS
75329s
HUF75329P3
19407
|
75329d
Abstract: TA75329 HUF75329D3
Text: HUF75329D3, HUF75329D3S Semiconductor Data Sheet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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OCR Scan
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PDF
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HUF75329D3,
HUF75329D3S
TA7532HERM2
98e-2
57e-2
13e-1
26e-2
HUF75329D
80e-3
00e-2
75329d
TA75329
HUF75329D3
|
Untitled
Abstract: No abstract text available
Text: interrii HRFZ44N Data S heet J u n e 1999 49A, 55V, 0.022 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power M O S F E T is manufactured using the innovative U ltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in
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OCR Scan
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HRFZ44N
HRFZ44N
AN7254
AN7260.
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