12n60c3d
Abstract: TA49182 TA4918 HGT1S12N60C3DS HGT1S12N60C3DS9A HGTP12N60C3D TA49123 TA49188
Text: HGTP12N60C3D, HGT1S12N60C3DS Data Sheet January 2000 File Number 4261.1 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar
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HGTP12N60C3D,
HGT1S12N60C3DS
150oC.
TA49123.
TA49188.
150oC
210ns
12n60c3d
TA49182
TA4918
HGT1S12N60C3DS
HGT1S12N60C3DS9A
HGTP12N60C3D
TA49123
TA49188
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12N60C3
Abstract: 12n60c3d HGT1S12N60C3DS HGT1S12N60C3DST HGTP12N60C3D TA49123 TA49182 TA49188 12n60c
Text: HGTP12N60C3D, HGT1S12N60C3DS Data Sheet September 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a
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HGTP12N60C3D,
HGT1S12N60C3DS
150oC.
TA49123.
TA49188.
150oC
210ns
12N60C3
12n60c3d
HGT1S12N60C3DS
HGT1S12N60C3DST
HGTP12N60C3D
TA49123
TA49182
TA49188
12n60c
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HGTP12N60B3D
Abstract: 12N60B3 12n60b TA49188 TB334 12N60B3D HGT1S12N60B3DS HGT1S12N60B3DST HGTG12N60B3D
Text: HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Data Sheet September 2001 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of
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HGTG12N60B3D,
HGTP12N60B3D,
HGT1S12N60B3DS
150oC.
TA49171.
TA49188.
HGTP12N60B3D
12N60B3
12n60b
TA49188
TB334
12N60B3D
HGT1S12N60B3DS
HGT1S12N60B3DST
HGTG12N60B3D
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TA49188
Abstract: 12N60C3D HGT1S12N60C3DS HGT1S12N60C3DS9A HGTP12N60C3D TA49123 TA49182
Text: HGTP12N60C3D, HGT1S12N60C3DS Data Sheet January 2000 File Number 4261.1 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar
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HGTP12N60C3D,
HGT1S12N60C3DS
150oC.
TA49123.
TA49188.
150oC
210ns
TA49188
12N60C3D
HGT1S12N60C3DS
HGT1S12N60C3DS9A
HGTP12N60C3D
TA49123
TA49182
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12n60b3d
Abstract: HGTP12N60B3D HGT1S12N60B3DS HGT1S12N60B3DS9A HGTG12N60B3D TA49188 TB334
Text: HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Data Sheet December 2001 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of
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HGTG12N60B3D,
HGTP12N60B3D,
HGT1S12N60B3DS
150oC.
TA49171.
TA49188.
HGT1S12N60B3DS
12n60b3d
HGTP12N60B3D
HGT1S12N60B3DS9A
HGTG12N60B3D
TA49188
TB334
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TA49171
Abstract: IGBT JUNCTION TEMPERATURE CALCULATION
Text: HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Data Sheet January 2000 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of
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HGTG12N60B3D,
HGTP12N60B3D,
HGT1S12N60B3DS
150oC.
TA49171.
TA49188.
TA49171
IGBT JUNCTION TEMPERATURE CALCULATION
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12n60c
Abstract: No abstract text available
Text: HGTP12N60C3D, HGT1S12N60C3DS Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a
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HGTP12N60C3D,
HGT1S12N60C3DS
150oC.
TA49123.
TA49188.
150oC
210ns
12n60c
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12n60b3d
Abstract: HGT1S12N60B3DS HGT1S12N60B3DS9A HGTG12N60B3D HGTP12N60B3D TA49188 TB334
Text: HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Data Sheet January 2000 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of
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HGTG12N60B3D,
HGTP12N60B3D,
HGT1S12N60B3DS
150oC.
TA49171.
TA49188.
12n60b3d
HGT1S12N60B3DS
HGT1S12N60B3DS9A
HGTG12N60B3D
HGTP12N60B3D
TA49188
TB334
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65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
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1-888-INTERSIL
MS-012AA
MO-153AA
RF1K49090
RF1K49093
RF1K49092
ITF87056DQT
ITF87072DK8T
ITF87008DQT
RF1K49223
65e9 transistor
transistor 75307D
Transistor 65e8
SD MOSFET DRIVE DATASHEET 4468 8 PIN
G40N60
RHR15120 equivalent
10n120bnd
76107d
transistor 76121D
emerson three phase dc motor driver service note
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12N60B3D
Abstract: HGT1S12N60B3D HGT1S12N60B3DS HGT1S12N60B3DS9A HGTG12N60B3D HGTP12N60B3D TA49188 TB334
Text: HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3D, HGT1S12N60B3DS Semiconductor 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode December 1997 Features Description • 27A, 600V, TC = 25oC This family of MOS gated high voltage switching devices
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HGTG12N60B3D,
HGTP12N60B3D,
HGT1S12N60B3D,
HGT1S12N60B3DS
150oC.
TA49171.
TA49188.
12N60B3D
HGT1S12N60B3D
HGT1S12N60B3DS
HGT1S12N60B3DS9A
HGTG12N60B3D
HGTP12N60B3D
TA49188
TB334
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12N60B3
Abstract: 12n60b3d
Text: HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3D, HGT1S12N60B3DS S E M I C O N D U C T O R 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode December 1997 Features Description • 27A, 600V, TC = 25oC This family of MOS gated high voltage switching devices
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HGTG12N60B3D,
HGTP12N60B3D,
HGT1S12N60B3D,
HGT1S12N60B3DS
150oC.
TA49171.
TA49188.
1-800-4-HARRIS
12N60B3
12n60b3d
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12n60c
Abstract: 12n60c3d TA49182 12N60C3 TA49123 TA49188 HGT1S12N60C3DS HGT1S12N60C3DS9A HGTP12N60C3D 12N60
Text: HGTP12N60C3D, HGT1S12N60C3DS Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a
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HGTP12N60C3D,
HGT1S12N60C3DS
150oC.
TA49123.
TA49188.
150oC
210ns
12n60c
12n60c3d
TA49182
12N60C3
TA49123
TA49188
HGT1S12N60C3DS
HGT1S12N60C3DS9A
HGTP12N60C3D
12N60
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12n60c3d
Abstract: IGBT 12n60c3D HGT1S12N60C3D HGT1S12N60C3DS HGT1S12N60C3DS9A HGTP12N60C3D TA49123 TA49182 TA49188 12n60c3
Text: HGTP12N60C3D, HGT1S12N60C3D, HGT1S12N60C3DS S E M I C O N D U C T O R 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes January 1997 Features Description • 24A, 600V at TC = 25oC This family of MOS gated high voltage switching devices
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HGTP12N60C3D,
HGT1S12N60C3D,
HGT1S12N60C3DS
150oC.
TA49123.
TA49188.
150oC
210ns
1-800-4-HARRIS
12n60c3d
IGBT 12n60c3D
HGT1S12N60C3D
HGT1S12N60C3DS
HGT1S12N60C3DS9A
HGTP12N60C3D
TA49123
TA49182
TA49188
12n60c3
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12n60b3d
Abstract: 12N60B3 Zener Diode LT 432 12N60 TA49188 HGT1S12N60B3DS HGT1S12N60B3DS9A HGTG12N60B3D HGTP12N60B3D TB334
Text: HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS in t e r r ii J a n u a ry . Data Sheet 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar
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OCR Scan
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12N60B3D,
HGT1S12N60B3DS
TA49171.
TA49188.
12n60b3d
12N60B3
Zener Diode LT 432
12N60
TA49188
HGT1S12N60B3DS
HGT1S12N60B3DS9A
HGTG12N60B3D
HGTP12N60B3D
TB334
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12n60c3d
Abstract: IGBT 12n60c3D
Text: u A Q Q ie HGTP12N60C3D, HGT1S12N60C3D, HGT1S12N60C3DS 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1997 Features Description • 24A, 600V at T c = 25°C This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transis
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OCR Scan
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HGTP12N60C3D,
HGT1S12N60C3D,
HGT1S12N60C3DS
TA49123.
TA49188.
O-263AB
12n60c3d
IGBT 12n60c3D
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2n60c3
Abstract: 12n60c3d 2n60c 2N60C3D TA49182 IGBT 12n60c3D transistor TE 901 equivalent 12n60c 2n60 TO-262AA equivalent
Text: l j A D D HGTP12N60C3D, h g t i s i 2N60C3D, HGT1S12N60C3DS I S 24A , 600V, U F S S e r i e s N - C h a n n e l I G B T with An ti -Parai I el H y p erfa st Di o d es January 1997 Features Description • 24A, 600V at Tc = 25 °C This family of MOS gated high voltage switching devices
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OCR Scan
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HGTP12N60C3D,
2N60C3D,
HGT1S12N60C3DS
TA49123.
TA49188.
2n60c3
12n60c3d
2n60c
2N60C3D
TA49182
IGBT 12n60c3D
transistor TE 901 equivalent
12n60c
2n60
TO-262AA equivalent
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MJ-112
Abstract: T1S12 mosfet 600v 10a to-220ab
Text: HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3D, HGT1S12N60B3DS HARRIS S E M I C O N D U C T O R 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode December 1997 Features Description This family of MOS gated high voltage switching devices com bine the best features of MOSFETs and bipolar transis
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OCR Scan
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PDF
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HGTG12N60B3D,
HGTP12N60B3D,
HGT1S12N60B3D,
HGT1S12N60B3DS
TA49171.
TA49188.
1-800-4-HARRIS
MJ-112
T1S12
mosfet 600v 10a to-220ab
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Untitled
Abstract: No abstract text available
Text: HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3D, HGT1S12N60B3DS uADQie rw o S E M I C rtru O N D U C T O R 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode December 1997 Description Features This fam ily of MOS gated high voltage switching devices
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OCR Scan
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PDF
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HGTG12N60B3D,
HGTP12N60B3D,
HGT1S12N60B3D,
HGT1S12N60B3DS
TA49171.
TA49188.
1-800-4-HARRIS
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