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    2N60 Search Results

    2N60 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N60 Kexin N-Channel MOSFET Original PDF
    2N60 TY Semiconductor N-Channel MOSFET - TO-220 Original PDF
    2N60 Unisonic Technologies 2 Amps, 600 Volts N-CHANNEL MOSFET Original PDF
    2N-60 Inmet ATTENUATOR Scan PDF
    2N60 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N60 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N60 Unknown Shortform Transistor Datasheet Guide Scan PDF
    2N60 Unknown Vintage Transistor Datasheets Scan PDF
    2N60 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
    2N60 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N60 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N60 Unknown GE Transistor Specifications Scan PDF
    2N60 Unknown Shortform Transistor PDF Datasheet Scan PDF
    2N600 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N600 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
    2N600 Unknown Shortform Transistor Datasheet Guide Scan PDF
    2N600 Unknown Vintage Transistor Datasheets Scan PDF
    2N600 Unknown Vintage Transistor Datasheets Scan PDF
    2N600 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
    2N600 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    ...
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    2N60 Price and Stock

    Littelfuse Inc 2N6075AG

    TRIAC SENS GATE 600V 4A TO225AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2N6075AG Box 10,386 1
    • 1 $0.89
    • 10 $0.771
    • 100 $0.5336
    • 1000 $0.37944
    • 10000 $0.29644
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    Mouser Electronics 2N6075AG 3,139
    • 1 $0.78
    • 10 $0.678
    • 100 $0.491
    • 1000 $0.348
    • 10000 $0.333
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    Arrow Electronics 2N6075AG 22,936 21 Weeks 1
    • 1 $0.5801
    • 10 $0.5241
    • 100 $0.4167
    • 1000 $0.2997
    • 10000 $0.2728
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    2N6075AG 1,500 21 Weeks 1
    • 1 $0.737
    • 10 $0.6436
    • 100 $0.4753
    • 1000 $0.3164
    • 10000 $0.2841
    		Buy Now
    2N6075AG 1,275 21 Weeks 1
    • 1 $0.4549
    • 10 $0.4278
    • 100 $0.3668
    • 1000 $0.2879
    • 10000 $0.2714
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    Solid State Inc. 2N6041

    TRANS PNP DARL 80V 8A TO220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2N6041 Bulk 5,000 10
    • 1 -
    • 10 $0.75
    • 100 $0.75
    • 1000 $0.75
    • 10000 $0.75
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    Flip Electronics FDP12N60NZ

    MOSFET N-CH 600V 12A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FDP12N60NZ Bulk 4,001 100
    • 1 -
    • 10 -
    • 100 $6.34
    • 1000 $6.34
    • 10000 $6.34
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    Flip Electronics HGTP12N60C3D

    IGBT 600V 24A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HGTP12N60C3D Tube 1,600 400
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.47
    • 10000 $1.47
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    STMicroelectronics STP42N60M2-EP

    MOSFET N-CH 600V 34A TO220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey STP42N60M2-EP Tube 1,000 1
    • 1 $6.45
    • 10 $6.45
    • 100 $4.3841
    • 1000 $3.33679
    • 10000 $3.14195
    		Buy Now
    Avnet Americas STP42N60M2-EP Tube 16 Weeks 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $3.58108
    • 10000 $3.21935
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    Find more 2N60 price and stock on Findchips.com

    2N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6030

    Abstract: 2N6029 2N5629 2N5630
    Text: Inchange Semiconductor Product Specification 2N6029 2N6030 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N5629 2N5630 ・High power dissipations APPLICATIONS ・For high voltage and high power amplifier applications


    Original     		PDF 2N6029 2N6030 2N5629 2N5630 2N6029 2N6030 2N5630

    2N5629

    Abstract: 2N5630 2N6029 2N6030
    Text: Inchange Semiconductor Product Specification 2N5629 2N5630 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N6029 2N6030 APPLICATIONS ・For high voltage and high power amplifier applications PINNING PIN DESCRIPTION 1 Base


    Original     		PDF 2N5629 2N5630 2N6029 2N6030 2N5629 2N5630 2N6030

    2N6032

    Abstract: 2N6033 all ic data all ic datasheet
    Text: TECHNICAL DATA 2N6032 JANTX, JTXV 2N6033 JANTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/528 NPN POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Collector Current Emitter-Base Voltage Base Current


    Original     		PDF 2N6032 2N6033 MIL-PRF-19500/528 2N6032 2N6033 all ic data all ic datasheet

    2N6058

    Abstract: 2N6059
    Text: Product Specification www.jmnic.com 2N6058/2N6059 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High gain ・High current ・High dissipation ・Complement to type 2N5883/2N5884 APPLICATIONS ・They are intended for use in power linear


    Original     		PDF 2N6058/2N6059 2N5883/2N5884 2N6058 2N6059 120mA 2N6058 2N6059

    2N5631

    Abstract: 2N6031
    Text: Product Specification www.jmnic.com 2N5631 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N6031 ・High collector-emitter sustaining voltage ・High DC current gain ・Low collector-emitter saturation voltage APPLICATIONS


    Original     		PDF 2N5631 2N6031 2N5631 2N6031

    UTC2N60L

    Abstract: 2N60 utc 2n60l mosfet 472
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60L Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 2N60L is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF 2N60L O-220 2N60L O-220F O-220F1 QW-R502-472 UTC2N60L 2N60 utc 2n60l mosfet 472

    2N6054

    Abstract: 2N6053 2N6055 2N6056
    Text: Inchange Semiconductor Product Specification 2N6053 2N6054 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·DARLINGTON ·Complement to type 2N6055;2N6056 APPLICATIONS ·General-purpose power amplifier and low


    Original     		PDF 2N6053 2N6054 2N6055 2N6056 2N6053 2N6054 2N6056

    2N6055

    Abstract: 2N6056 2N6053 2N6054
    Text: Inchange Semiconductor Product Specification 2N6055 2N6056 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·DARLINGTON ·Complement to type 2N6053;2N6054 APPLICATIONS ·General-purpose power amplifier and low


    Original     		PDF 2N6055 2N6056 2N6053 2N6054 2N6055 2N6056 2N6054

    Untitled

    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS 2N6027-2N6028 PROGRAMMABLE UNIJUNCTION TRANSISTORS Available Non-RoHS standard or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.


    Original     		PDF 2N6027-2N6028 MIL-PRF-19500,

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60K Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		PDF 2N60K 2N60K QW-R502-819

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


    Original     		PDF QW-R502-053

    2N6027

    Abstract: PUT 2N6027 equivalent transistor of 2n6027 2n5270 2N6028 Application Note 2n6028 "Programmable Unijunction Transistor" 2n6027 PUT transistor 2n6027 2n527
    Text: 2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers http://onsemi.com Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, η, IV, and IP by merely selecting two


    Original     		PDF 2N6027, 2N6028 2N6027/D 2N6027 PUT 2N6027 equivalent transistor of 2n6027 2n5270 2N6028 Application Note 2n6028 "Programmable Unijunction Transistor" 2n6027 PUT transistor 2n6027 2n527

    2N6040

    Abstract: 2N6041 2N6042 2N6043 2N6044 2N6045
    Text: ON Semiconductor PNP Plastic Medium-Power Complementary Silicon Transistors 2N6040 2N6042 2N6043 * NPN 2N6045* . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain – hFE = 2500 Typ) @ IC = 4.0 Adc


    Original     		PDF 2N6040 2N6042 2N6043 2N6045* 2N6040, 2N6042, 2N6045 2N6043 2N6040 2N6041 2N6042 2N6044 2N6045

    2N6033

    Abstract: No abstract text available
    Text: 2N6033 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N6033 O204AA) 31-Jul-02 2N6033

    2n60p

    Abstract: DS99422E
    Text: PolarHVTM Power MOSFET IXTP 2N60P IXTY 2N60P VDSS ID25 RDS on = 500 = 2 ≤ 5.1 V A Ω N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ VGSS VGSM Continuous Transient


    Original     		PDF 2N60P O-220 2n60p DS99422E

    2N6057

    Abstract: No abstract text available
    Text: 2N6057 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N6057 O204AA) 31-Jul-02 2N6057

    2N6055

    Abstract: No abstract text available
    Text: 2N6055 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N6055 O204AA) 31-Jul-02 2N6055

    2N6056

    Abstract: No abstract text available
    Text: 2N6056 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N6056 O204AA) 31-Jul-02 2N6056

    2N6049E

    Abstract: No abstract text available
    Text: 2N6049E Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a


    Original     		PDF 2N6049E O213AA) 1-Aug-02 2N6049E

    2N6041 MOTOROLA

    Abstract: 2N6045 MOTOROLA 2n6042 motorola 2N6043 MOTOROLA 2N6044 MOTOROLA 2N6041 1N5825 2N6040 2N6042 2N6041 application
    Text: MOTOROLA Order this document by 2N6040/D SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors PNP 2N6040 thru 2N6042* NPN 2N6043 thru 2N6045* . . . designed for general–purpose amplifier and low–speed switching applications.


    Original     		PDF 2N6040/D 2N6040 2N6042* 2N6043 2N6045* 2N6040, 2N6041, 2N6044 2N6042, 2N6041 MOTOROLA 2N6045 MOTOROLA 2n6042 motorola 2N6043 MOTOROLA 2N6044 MOTOROLA 2N6041 1N5825 2N6040 2N6042 2N6041 application

    Untitled

    Abstract: No abstract text available
    Text: MOSFET IC SMDType DIP Type N-Channel MOSFET 2N60 TO-220 Features RDS ON = 3.8 @VGS = 10V. Low gate charge ( typical 9.0 nC). Low Crss ( typical 5.0 pF). Fast switching capability. 1 Gate 2 Drain 3 Source Avalanche energy specified Improved dv/dt capability.


    Original     		PDF O-220

    transistor 206

    Abstract: 2N7370 AN-750 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 2N6285
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR DARLINGTON PNP TRANSISTOR sus VOLTS Ic (max) AMPS 2N6050 60 12 2N6051 80 2N6052 PACKAGE DEVICE TYPE PNP TO-3 TO-204AA flCX TO-254AA V cE O Ic/ V c E min/max @ A/V 1*FE @ ^C E (sat) @ IC/IB V @ A/A C(P P Ît (MHz) 750/18000@6/3


    OCR Scan     		PDF 2N6050 O-204AA 2N6051 2N6052 2N6285 2N6286 2N6287 O-254AA 2N7371 T0-204AA transistor 206 2N7370 AN-750 2N6057 2N6058 2N6059

    BD278

    Abstract: TO-220-AA 2N6033 2N6079 2N6108 2N6102 2N6103 2N6032 2N6098 2N6099
    Text: 2N6033 FAMILY [n-p-n] silicon f j = 50 MHz min; P j = 140 W max DESCRIPTION hFE V/*ES\(SUS) V p e r-t(sus) V/<cu(sill) V V V 2N TYPES l<"» A V « V •CER- "1A Temp.—°C V CF 25 150 V 1.3 1 50 40 5 2 4 2 50 40 0.05« 0.25» 250 8« 5« 250 0.5 1.2 0.2


    OCR Scan     		PDF 2N6033 2N6032 2N6079 2N6103 f2N6111 T0-220AB 2N6108 O-220AA 2N6109 BD278 TO-220-AA 2N6102 2N6098 2N6099

    BD368

    Abstract: MPC1000 MPC900 bd365 voltage regulators 20 amp to3 b0365 BD364 MJ3771 2N5629 2N5631
    Text: NPN PNP v CEO V o lts M in./M ax. •c Am p V CE sat @ >C V o lts Max. Am p. f T MHz PD Case Watts le = 16.0 A. MJ4034 BD317 2N 5629 M J4035 2N 5630 M J3773 2N5631 MJ4031 BD318 2N6029 M J4032 2 N6030 2N6031 80 100 100 100 120 140 140 1 0 0 0 /2 5 /25 /10 0


    OCR Scan     		PDF MJ4034 MJ4031 BD317 BD318 2N5629 2N6029 MJ4035 MJ4032 2N5630 2l\l6030 BD368 MPC1000 MPC900 bd365 voltage regulators 20 amp to3 b0365 BD364 MJ3771 2N5631