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    G12N60b3

    Abstract: g12n60 TA49171 HGT1S12N60B3S HGT1S12N60B3S9A HGTG12N60B3 HGTP12N60B3 HGTP12N60B3D LD26 110A
    Text: HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S Data Sheet April 2002 27A, 600V, UFS Series N-Channel IGBTs Features This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of


    Original     		PDF HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S 150oC. 112ns 150oC G12N60b3 g12n60 TA49171 HGT1S12N60B3S HGT1S12N60B3S9A HGTG12N60B3 HGTP12N60B3 HGTP12N60B3D LD26 110A

    G12N60B3

    Abstract: HGTG12N60B3 HGTG12N60B3D LD26
    Text: HGTG12N60B3 Data Sheet August 2003 27A, 600V, UFS Series N-Channel IGBTs Features This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		PDF HGTG12N60B3 150oC. 112ns 150oC G12N60B3 HGTG12N60B3 HGTG12N60B3D LD26

    HGTP12N60B3D

    Abstract: 12N60B3 12n60b TA49188 TB334 12N60B3D HGT1S12N60B3DS HGT1S12N60B3DST HGTG12N60B3D
    Text: HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Data Sheet September 2001 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of


    Original     		PDF HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS 150oC. TA49171. TA49188. HGTP12N60B3D 12N60B3 12n60b TA49188 TB334 12N60B3D HGT1S12N60B3DS HGT1S12N60B3DST HGTG12N60B3D

    HGT1S12N60B3S

    Abstract: G12N60B3 HGT1S12N60B3S9A HGTP12N60B3 HGTP12N60B3D LD26 TB334 g12n60
    Text: HGTP12N60B3, HGT1S12N60B3S Data Sheet January 2000 27A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the


    Original     		PDF HGTP12N60B3, HGT1S12N60B3S HGTP12N60B3 HGT1S12N60B3S 150oC. G12N60B3 HGT1S12N60B3S9A HGTP12N60B3D LD26 TB334 g12n60

    12n60b3d

    Abstract: HGTP12N60B3D HGT1S12N60B3DS HGT1S12N60B3DS9A HGTG12N60B3D TA49188 TB334
    Text: HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Data Sheet December 2001 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of


    Original     		PDF HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS 150oC. TA49171. TA49188. HGT1S12N60B3DS 12n60b3d HGTP12N60B3D HGT1S12N60B3DS9A HGTG12N60B3D TA49188 TB334

    TA49171

    Abstract: IGBT JUNCTION TEMPERATURE CALCULATION
    Text: HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Data Sheet January 2000 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of


    Original     		PDF HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS 150oC. TA49171. TA49188. TA49171 IGBT JUNCTION TEMPERATURE CALCULATION

    12n60b3d

    Abstract: HGT1S12N60B3DS HGT1S12N60B3DS9A HGTG12N60B3D HGTP12N60B3D TA49188 TB334
    Text: HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Data Sheet January 2000 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of


    Original     		PDF HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS 150oC. TA49171. TA49188. 12n60b3d HGT1S12N60B3DS HGT1S12N60B3DS9A HGTG12N60B3D HGTP12N60B3D TA49188 TB334

    Untitled

    Abstract: No abstract text available
    Text: HGTP12N60B3, HGT1S12N60B3S Data Sheet December 2001 27A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the


    Original     		PDF HGTP12N60B3, HGT1S12N60B3S HGTP12N60B3 HGT1S12N60B3S 150oC. TA49171.

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    12N60B3D

    Abstract: HGT1S12N60B3D HGT1S12N60B3DS HGT1S12N60B3DS9A HGTG12N60B3D HGTP12N60B3D TA49188 TB334
    Text: HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3D, HGT1S12N60B3DS Semiconductor 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode December 1997 Features Description • 27A, 600V, TC = 25oC This family of MOS gated high voltage switching devices


    Original     		PDF HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3D, HGT1S12N60B3DS 150oC. TA49171. TA49188. 12N60B3D HGT1S12N60B3D HGT1S12N60B3DS HGT1S12N60B3DS9A HGTG12N60B3D HGTP12N60B3D TA49188 TB334

    G12N60

    Abstract: 4410 mosfet G12N60b3 HGT1S12N60B3S HGT1S12N60B3S9A HGTP12N60B3 HGTP12N60B3D TB334 TA49171
    Text: HGTP12N60B3, HGT1S12N60B3S Data Sheet January 2000 File Number 4410.2 27A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have


    Original     		PDF HGTP12N60B3, HGT1S12N60B3S HGTP12N60B3 HGT1S12N60B3S 150oC. G12N60 4410 mosfet G12N60b3 HGT1S12N60B3S9A HGTP12N60B3D TB334 TA49171

    G12N60B3

    Abstract: HGT1S12N60B3 HGT1S12N60B3S HGT1S12N60B3S9A HGTP12N60B3 HGTP12N60B3D TB334 G12N60B G12N60
    Text: HGTP12N60B3, HGT1S12N60B3, HGT1S12N60B3S Semiconductor 27A, 600V, UFS Series N-Channel IGBTs December 1997 Features Description • 27A, 600V, TC = 25oC The HGTP12N60B3, HGT1S12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the


    Original     		PDF HGTP12N60B3, HGT1S12N60B3, HGT1S12N60B3S HGT1S12N60B3 150oC. 112ns 150oC TB334 G12N60B3 HGT1S12N60B3S HGT1S12N60B3S9A HGTP12N60B3 HGTP12N60B3D TB334 G12N60B G12N60

    717 MOSFET

    Abstract: No abstract text available
    Text: HGTP12N60B3, HGT1S12N60B3, HGT1S12N60B3S S E M I C O N D U C T O R 27A, 600V, UFS Series N-Channel IGBTs December 1997 Features Description • 27A, 600V, TC = 25oC The HGTP12N60B3, HGT1S12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the


    Original     		PDF HGTP12N60B3, HGT1S12N60B3, HGT1S12N60B3S HGT1S12N60B3 HGT1S12N60B3S 150oC. 1-800-4-HARRIS 717 MOSFET

    12N60B3

    Abstract: 12n60b3d
    Text: HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3D, HGT1S12N60B3DS S E M I C O N D U C T O R 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode December 1997 Features Description • 27A, 600V, TC = 25oC This family of MOS gated high voltage switching devices


    Original     		PDF HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3D, HGT1S12N60B3DS 150oC. TA49171. TA49188. 1-800-4-HARRIS 12N60B3 12n60b3d

    G12N60b3

    Abstract: G12N60B HGT1S12N60B3S HGT1S12N60B3S9A HGTP12N60B3 HGTP12N60B3D LD26 TB334 G12N60 Bipolar HJ
    Text: in t e HGTP12N60B3, HGT1S12N60B3S r r ii J a n u a ry . m Data Sheet 27A, 600V, UFS Series N-Channel IGBTs The HGTP12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have


    OCR Scan     		PDF HGTP12N60B3, HGT1S12N60B3S HGTP12N60B3 HGT1S12N60B3S TA49171ration G12N60b3 G12N60B HGT1S12N60B3S9A HGTP12N60B3D LD26 TB334 G12N60 Bipolar HJ

    MJ-112

    Abstract: T1S12 mosfet 600v 10a to-220ab
    Text: HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3D, HGT1S12N60B3DS HARRIS S E M I C O N D U C T O R 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode December 1997 Features Description This family of MOS gated high voltage switching devices com bine the best features of MOSFETs and bipolar transis­


    OCR Scan     		PDF HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3D, HGT1S12N60B3DS TA49171. TA49188. 1-800-4-HARRIS MJ-112 T1S12 mosfet 600v 10a to-220ab

    Untitled

    Abstract: No abstract text available
    Text: HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3D, HGT1S12N60B3DS uADQie rw o S E M I C rtru O N D U C T O R 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode December 1997 Description Features This fam ily of MOS gated high voltage switching devices


    OCR Scan     		PDF HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3D, HGT1S12N60B3DS TA49171. TA49188. 1-800-4-HARRIS

    DIODE 3LU

    Abstract: DIODE 3LU 32 DIODE 3LU 35 3lu diode
    Text: HARFR IS HGTP12N60B3, HGT1S12N60B3, HGT1S12N60B3S S E M I C O N D U C T O R 27A, 600V, UFS Series N-Channel IGBTs December 1997 Features Description • 27A, 600V, T c = 25°C The HGTP12N60B3, HGT1S12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the


    OCR Scan     		PDF HGTP12N60B3, HGT1S12N60B3, HGT1S12N60B3S HGT1S12N60B3 112ns 1-800-4-HARRIS DIODE 3LU DIODE 3LU 32 DIODE 3LU 35 3lu diode

    G12N60B3

    Abstract: TO-262AA Package equivalent
    Text: HARRIS HGTP12N60B3, HGT1S12N60B3, HGT1S12N60B3S S E M I C O N D U C T O R 27A, 600V, UFS Series N-Channel IGBTs December 1997 Features Description • 27A, 600V, T c = 2 5 °C The HGTP12N60B3, HGT1S12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the


    OCR Scan     		PDF HGTP12N60B3, HGT1S12N60B3, HGT1S12N60B3S HGT1S12N60B3 HGT1S12N60B3S 1-800-4-HARRIS G12N60B3 TO-262AA Package equivalent