Untitled
Abstract: No abstract text available
Text: PRELIMINARY M IC R O N 512 K 512K WIDE DRAM X X M T4C851 2/3 8 W ID E D R A M 8 DRAM WIDE DRAM FAST-PAGE-MODE FEATURES PIN ASSIGNMENT Top View • Industry-standard x8 pinouts, timing, functions and packages • Address entry: ten row-addresses, nine columnaddresses
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T4C851
024-cycle
T4C8513
28-Pin
MT4C8512/3
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Untitled
Abstract: No abstract text available
Text: MICRON SE M I C ON DU C TO R INC b3E D • blllSHR DDGfibD? 7 3 e! * M R N MICRQN I M T 4 C 8 5 1 2 /3 5 1 2 K X 8 W ID E D R A M SEBICO M O UCTO Rinc WIDE DRAM 512K X 8 DRAM FAST-PAGE-MODE FEATURES PIN ASSIGNMENT Top View • Industry-standard x8 pinouts, timing, functions and
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OCR Scan
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PDF
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024-cycle
C19S3.
MT4C8512/3
MT4CIS12/3
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY M IC R O N 512K WIDE DRAM T4C8512/3 L WIDE DRAM X 8 512K x 8 DRAM FEATURES PIN ASSIGNMENT Top View • Industry-standard x8 pinouts, timing, functions and packages • Address entry: ten row-addresses, nine columnaddresses • High-perform ance CM OS silicon-gate process
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OCR Scan
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PDF
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MT4C8512/3
MT4C8513
024-cycle
128ms
350mW
28-Pin
MT4C8512/3L
Z1993.
T4C8512/3
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Untitled
Abstract: No abstract text available
Text: blllSM'ì 0004371 2E2 B U R N SSE D MICRON TECHNOLOGY INC ADVANCE ic n o N T4C8512/3 5 1 2 K x 8 DRAM DRAM 512K x 8 DRAM FAST PAGE M O D E • Industry standard x8 pinouts, timing, functions and packages • Address entry: 10 row addresses, nine column addresses
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OCR Scan
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PDF
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MT4C8512/3
350mW
024-cycle
MT4C8513
28-Pin
blllS41
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY M IC R O N 512K X 8 M T 4 C 8 5 1 2/3 L W ID E D R A M 512K x 8 DRAM WIDE DRAM FEATURES • Industry-standard x8 pinouts, timing, functions and packages • Address entry: ten row-addresses, nine columnaddresses • High-performance CMOS silicon-gate process
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OCR Scan
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PDF
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MT4C8513
024-cycle
128ms
350mW
MT4C8512/3
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LM 8512
Abstract: T4C marking marking t4c
Text: ADVANCE M T4C 8512/3 S 512K x 8 W IDE DRAM M IC R O N WIDE DRAM 512K x 8 DRAM FEATURES PIN ASSIGNMENT Top View • Industry-standard x8 pinouts, timing, functions and packages • Address entry: ten row-addresses, nine columnaddresses • High-perform ance CM O S silicon-gate process
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OCR Scan
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PDF
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MT4C8513
024-cycle
128ms
350mW
28-Pin
MT4C8512/3S
MT4C8512/3
LM 8512
T4C marking
marking t4c
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Untitled
Abstract: No abstract text available
Text: SPR i 1993 PRELIMINARY MICRON • 512K X SEMICONDUCTOR MC WIDE DRAM T4C8512/3 L WIDE DRAM 8 512K x 8 DRAM LOW POWER, EXTENDED REFRESH FEATURES • Industry-standard x8 pinouts, timing, functions and packages • Address entry: ten row-addresses, nine columnaddresses
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PDF
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MT4C8512/3
MT4C8513
024-cycle
128ms
350mW
28-Pin
S12/3L
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY T4C8512/3 5 1 2 K x 8 WIDE DRAM |U|IC=RON 512K WIDE DRAM X 8 DRAM WIDE DRAM FAST-PAGE-MODE FEATURES PIN ASSIGNMENT Top View • Industry-standard x8 pinouts, tim ing, functions and packages • Address entry: ten row-addresses, nine columnaddresses
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OCR Scan
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PDF
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MT4C8512/3
024-cycle
MT4C8513
28-Pin
DQ2512/3
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MT4C8512
Abstract: ITE 8512 MT4CB512
Text: M IC R O N 512K DRAM T4C8512 X 8 DRAM 512K x 8 DRAM FAST PAGE MODE FEATURES • Industry-standard x8 pinouts, tim ing, functions and packages • Address entry: ten row-addresses, nine colurnnaddresses • High-perform ance CM OS silicon-gate process • S in g le + 5 V ±10% power supply*
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OCR Scan
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PDF
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MT4C8512
024-cycle
28-Pin
Q1994,
ITE 8512
MT4CB512
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY |W|IC=RC3N 512K M T4C 8 512/3 L WIDE DRAM X 8 512K x 8 DRAM WIDE DRAM LOW POWER, EXTENDED REFRESH FEATURES PIN ASSIGNMENT Top View OPTIONS 28-Pin ZIP (DB-3) 28-Pin SOJ (DC-4) MARKING • Timing 60ns access 70ns access 80ns access • MASKED WRITE
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PDF
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MT4C8513
024-cycle
128ms
350mW
28-Pin
MT4C8512/3
WT4C6512/3
S1993,
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Untitled
Abstract: No abstract text available
Text: MICRO N T E C H N O L O G Y INC b l l l S H I D D D 4 36 S Ö17 • URN 55E D ADVANCE T4C8512/3 L 512K X 8 DF5AM MICRON 512K x 8 DRAM LOW POWER, EXTENDED REFRESH FEATURES • Industry standard x8 pinouts, timing, functions and packages • Address entry: 10 row addresses, nine column
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OCR Scan
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PDF
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MT4C8512/3
MT4C8513
024-cycle
128ms
350mW
MT4C8512/3L
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY M IC R O N 512K WIDE DRAM T4C8512/3 L WIDE DRAM X 8 512K x 8 DRAM LOW POWER, EXTENDED REFRESH FEATURES PIN ASSIGNMENT Top View OPTIONS • M ASKED W RITE Not available Available • Packages Plastic SOJ (400 mil) Plastic TSOP (400 mil) Plastic ZIP (375 mil)
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PDF
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MT4C8512/3
28-Pin
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MICRON I T4C8512/3 512K X 8 WIDE DRAM •CmCOMOUCTCM. WC WIDE DRAM 512K X 8 DRAM FAST-PAGE-MODE FEATURES PIN ASSIGNMENT Top View • In d ustry-stand ard x 8 pinouts, tim ing, functions and • • • • • • • • • p ackages A d d ress entry: ten row -addresses, nine colum nad dresses
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OCR Scan
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PDF
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MT4C8512/3
024-cycle
28-Pierves
C1993
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Untitled
Abstract: No abstract text available
Text: M IC R O N • 512K X U M ic o N o u c rio n . « e WIDE DRAM T4C8512/3 L WIDE DRAM 8 512K x 8DRAM LOW POWER, EXTENDED REFRESH FEATURES • Industry-standard x8 pinouts, tim ing, functions and packages • Address entry: ten row-addresses, nine columriaddresses
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OCR Scan
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PDF
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MT4C8512/3
MT4C8513
024-cycle
128ms
28-Pin
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|
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY M IC R O N 512K WIDE DRAM 512K X 8 X 8 T4C8512/3 WIDE DRAM DRAM FAST-PAGE-MODE FEATURES • Industry-standard x8 pinouts, timing, functions and packages • Address entry: ten row-addresses, nine columnaddresses • High-performance CMOS silicon-gate process
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OCR Scan
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PDF
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MT4C8512/3
350mW
024-cycle
MT4C8513
28-Pin
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4C8512
Abstract: No abstract text available
Text: ADVANCE 512K M T4C 8 512/3 S W IDE DRAM X 8 512K x 8 DRAM WIDE DRAM EXTENDED REFRESH SELF REFRESH FEATURES PIN ASSIGNMENT Top View • Industry-standard x8 pinouts, tim ing, functions and packages • A ddress entry: ten row -addresses, nine colum naddresses
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OCR Scan
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PDF
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MT4C8513
024-cycle
128ms
350mW
28-Pin
MT4C8512/3
4C8512
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY M T 4 C 8 5 1 2 /3 512 K X 8 W ID E D R A M |u iic n o N WIDE DRAM 512K x 8 DRAM FAST-PAGE-MODE FEATURES • Industry-standard x8 pinouts, timing, functions and packages • Address entry: ten row-addresses, nine columnaddresses • High-performance CMOS silicon-gate process
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OCR Scan
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PDF
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350mW
11L-compatible
024-cycle
MT4C8513
28-Pin
MT4C8512/3
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Untitled
Abstract: No abstract text available
Text: MICRON S E M I C O N D U C T O R INC b3E D • blllSHT MICRON I DDDfih22 T45 M M R N M T4C 8512/3 L m O K vX R8 WIDE \A/inP DRAM nOAM 512K S ili ICONOUCTOR MC WIDE DRAM 512K X 8 DRAM LOW POWER, EXTENDED REFRESH FEATURES • Industry-standard x8 pinouts, timing, functions and
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DDDfih22
MT4G8513
024-cyde
MT4C6512/3
C1993.
DGDflb37
MT4C8512/3L
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MT4C8512
Abstract: No abstract text available
Text: " j r ."' i 8 * 9 3 T4C8512/3 512K x 8 WIDE DRAM MICRON B S tM lC O H O U C T O R INC WIDE DRAM 512K x 8 DRAM FAST-PAGE-MODE FEATURES • Industry-standard x8 pinouts, timing, functions and packages • Address entry: ten row-addresses, nine columnaddresses
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PDF
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MT4C8512/3
024-cycle
MT4C8513
C1993.
MT4C8512
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