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    Untitled

    Abstract: No abstract text available
    Text: MICRON SE M I C ON DU C TO R INC b3E D • blllSHR DDGfibD? 7 3 e! * M R N MICRQN I M T 4 C 8 5 1 2 /3 5 1 2 K X 8 W ID E D R A M SEBICO M O UCTO Rinc WIDE DRAM 512K X 8 DRAM FAST-PAGE-MODE FEATURES PIN ASSIGNMENT Top View • Industry-standard x8 pinouts, timing, functions and


    OCR Scan     		PDF 024-cycle C19S3. MT4C8512/3 MT4CIS12/3

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY M IC R O N 512K WIDE DRAM MT4C8512/3 L WIDE DRAM X 8 512K x 8 DRAM FEATURES PIN ASSIGNMENT Top View • Industry-standard x8 pinouts, timing, functions and packages • Address entry: ten row-addresses, nine columnaddresses • High-perform ance CM OS silicon-gate process


    OCR Scan     		PDF MT4C8512/3 MT4C8513 024-cycle 128ms 350mW 28-Pin MT4C8512/3L Z1993. T4C8512/3

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY M IC R O N 512K X 8 M T 4 C 8 5 1 2/3 L W ID E D R A M 512K x 8 DRAM WIDE DRAM FEATURES • Industry-standard x8 pinouts, timing, functions and packages • Address entry: ten row-addresses, nine columnaddresses • High-performance CMOS silicon-gate process


    OCR Scan     		PDF MT4C8513 024-cycle 128ms 350mW MT4C8512/3

    LM 8512

    Abstract: T4C marking marking t4c
    Text: ADVANCE M T4C 8512/3 S 512K x 8 W IDE DRAM M IC R O N WIDE DRAM 512K x 8 DRAM FEATURES PIN ASSIGNMENT Top View • Industry-standard x8 pinouts, timing, functions and packages • Address entry: ten row-addresses, nine columnaddresses • High-perform ance CM O S silicon-gate process


    OCR Scan     		PDF MT4C8513 024-cycle 128ms 350mW 28-Pin MT4C8512/3S MT4C8512/3 LM 8512 T4C marking marking t4c

    Untitled

    Abstract: No abstract text available
    Text: SPR i 1993 PRELIMINARY MICRON • 512K X SEMICONDUCTOR MC WIDE DRAM MT4C8512/3 L WIDE DRAM 8 512K x 8 DRAM LOW POWER, EXTENDED REFRESH FEATURES • Industry-standard x8 pinouts, timing, functions and packages • Address entry: ten row-addresses, nine columnaddresses


    OCR Scan     		PDF MT4C8512/3 MT4C8513 024-cycle 128ms 350mW 28-Pin S12/3L

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MT4C8512/3 5 1 2 K x 8 WIDE DRAM |U|IC=RON 512K WIDE DRAM X 8 DRAM WIDE DRAM FAST-PAGE-MODE FEATURES PIN ASSIGNMENT Top View • Industry-standard x8 pinouts, tim ing, functions and packages • Address entry: ten row-addresses, nine columnaddresses


    OCR Scan     		PDF MT4C8512/3 024-cycle MT4C8513 28-Pin DQ2512/3

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY M IC R O N 512 K 512K WIDE DRAM X X M T4C851 2/3 8 W ID E D R A M 8 DRAM WIDE DRAM FAST-PAGE-MODE FEATURES PIN ASSIGNMENT Top View • Industry-standard x8 pinouts, timing, functions and packages • Address entry: ten row-addresses, nine columnaddresses


    OCR Scan     		PDF T4C851 024-cycle T4C8513 28-Pin MT4C8512/3

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY M IC R O N 512K WIDE DRAM MT4C8512/3 L WIDE DRAM X 8 512K x 8 DRAM LOW POWER, EXTENDED REFRESH FEATURES PIN ASSIGNMENT Top View OPTIONS • M ASKED W RITE Not available Available • Packages Plastic SOJ (400 mil) Plastic TSOP (400 mil) Plastic ZIP (375 mil)


    OCR Scan     		PDF MT4C8512/3 28-Pin

    Untitled

    Abstract: No abstract text available
    Text: M IC R O N • 512K X U M ic o N o u c rio n . « e WIDE DRAM MT4C8512/3 L WIDE DRAM 8 512K x 8DRAM LOW POWER, EXTENDED REFRESH FEATURES • Industry-standard x8 pinouts, tim ing, functions and packages • Address entry: ten row-addresses, nine columriaddresses


    OCR Scan     		PDF MT4C8512/3 MT4C8513 024-cycle 128ms 28-Pin

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY M IC R O N 512K WIDE DRAM 512K X 8 X 8 MT4C8512/3 WIDE DRAM DRAM FAST-PAGE-MODE FEATURES • Industry-standard x8 pinouts, timing, functions and packages • Address entry: ten row-addresses, nine columnaddresses • High-performance CMOS silicon-gate process


    OCR Scan     		PDF MT4C8512/3 350mW 024-cycle MT4C8513 28-Pin

    4C8512

    Abstract: No abstract text available
    Text: ADVANCE 512K M T4C 8 512/3 S W IDE DRAM X 8 512K x 8 DRAM WIDE DRAM EXTENDED REFRESH SELF REFRESH FEATURES PIN ASSIGNMENT Top View • Industry-standard x8 pinouts, tim ing, functions and packages • A ddress entry: ten row -addresses, nine colum naddresses


    OCR Scan     		PDF MT4C8513 024-cycle 128ms 350mW 28-Pin MT4C8512/3 4C8512

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY M T 4 C 8 5 1 2 /3 512 K X 8 W ID E D R A M |u iic n o N WIDE DRAM 512K x 8 DRAM FAST-PAGE-MODE FEATURES • Industry-standard x8 pinouts, timing, functions and packages • Address entry: ten row-addresses, nine columnaddresses • High-performance CMOS silicon-gate process


    OCR Scan     		PDF 350mW 11L-compatible 024-cycle MT4C8513 28-Pin MT4C8512/3

    MT4C8512

    Abstract: No abstract text available
    Text: " j r ."' i 8 * 9 3 MT4C8512/3 512K x 8 WIDE DRAM MICRON B S tM lC O H O U C T O R INC WIDE DRAM 512K x 8 DRAM FAST-PAGE-MODE FEATURES • Industry-standard x8 pinouts, timing, functions and packages • Address entry: ten row-addresses, nine columnaddresses


    OCR Scan     		PDF MT4C8512/3 024-cycle MT4C8513 C1993. MT4C8512