BCM 6302
Abstract: micron MT4C database for 4081 ic
Text: OBSOLETE MARCH 1995 D18A 512K X 8, 256K x 16 D R A M D IE I^IICRON 512Kx 8, 256Kx 16 DRAM DRAM DIE MT4C8512D18A and MT4C16257D18A G EN ERAL PHYSICAL SPECIFICATIONS • Wafer thickness =18.5 mils ±0.5 mils. • The backside wafer surface Is polished bare silicon.
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114x114
512Kx
256Kx
MT4C8512D18A
MT4C16257D18A
150mm
BCM 6302
micron MT4C
database for 4081 ic
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ITE 8512
Abstract: ge 8513 M992 MT4CB512
Text: ADVANCE M T4C 85 12/3 L 512K X 8 DRAM |v iic = R a i\j 512K x 8 DRAM LOW POWER, EXTENDED REFRESH PIN ASSIGNMENT Top View • Ind ustry stand ard x8 p in o u ts, tim in g , fu n ctio n s and packages • A d d ress en try: 1Ü row ad d resses, n in e colu m n
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024-cycle
MT4C8512/3L
MT4C9512/34.
ITE 8512
ge 8513
M992
MT4CB512
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MT4C8512
Abstract: ITE 8512 MT4CB512
Text: M IC R O N 512K DRAM MT4C8512 X 8 DRAM 512K x 8 DRAM FAST PAGE MODE FEATURES • Industry-standard x8 pinouts, tim ing, functions and packages • Address entry: ten row-addresses, nine colurnnaddresses • High-perform ance CM OS silicon-gate process • S in g le + 5 V ±10% power supply*
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MT4C8512
024-cycle
28-Pin
Q1994,
ITE 8512
MT4CB512
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Untitled
Abstract: No abstract text available
Text: MICRO N T E C H N O L O G Y INC b l l l S H I D D D 4 36 S Ö17 • URN 55E D ADVANCE MT4C8512/3 L 512K X 8 DF5AM MICRON 512K x 8 DRAM LOW POWER, EXTENDED REFRESH FEATURES • Industry standard x8 pinouts, timing, functions and packages • Address entry: 10 row addresses, nine column
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MT4C8512/3
MT4C8513
024-cycle
128ms
350mW
MT4C8512/3L
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Untitled
Abstract: No abstract text available
Text: niCRON S E M I C O N D U C T O R INC L3E D • b 1 1 1 5 14^ 0 0 0 7 71 S ATI ■ URN ADVANCE MICRON ■ 512K SEMICONDUCTOR. INC. WIDE DRAM X MT4C8512/3S 8 WIDE DRAM 512K x 8 DRAM FEATURES • Industry-standard x8 pinouts, timing, functions and packages • Address entry: ten row-addresses, nine columnaddresses
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MT4C8512/3S
MT4C8513
024-cycle
128ms
MT4C8512/3
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MICRON I MT4C8512/3 512K X 8 WIDE DRAM •CmCOMOUCTCM. WC WIDE DRAM 512K X 8 DRAM FAST-PAGE-MODE FEATURES PIN ASSIGNMENT Top View • In d ustry-stand ard x 8 pinouts, tim ing, functions and • • • • • • • • • p ackages A d d ress entry: ten row -addresses, nine colum nad dresses
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MT4C8512/3
024-cycle
28-Pierves
C1993
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ite 8512
Abstract: LA 8512
Text: ADVANCE M T4C 8 512/3 512K X 8 DR AM M IC R O N DRAM 512K x 8 DRAM FAST PAGE MODE • • • • • • • • OPTIONS Vcc [ 1 DQ1 [ 2 • M asked W rite N o t available A v ailab le P ack ages P lastic SO J 400 m il P lastic T SO P (400 m il) P lastic Z IP (375 m il)
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024-cy
MT4C8512/3
MT4CB512/3
ite 8512
LA 8512
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MT4C8512
Abstract: No abstract text available
Text: " j r ."' i 8 * 9 3 MT4C8512/3 512K x 8 WIDE DRAM MICRON B S tM lC O H O U C T O R INC WIDE DRAM 512K x 8 DRAM FAST-PAGE-MODE FEATURES • Industry-standard x8 pinouts, timing, functions and packages • Address entry: ten row-addresses, nine columnaddresses
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MT4C8512/3
024-cycle
MT4C8513
C1993.
MT4C8512
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