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    T4635 Search Results

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    T4635 Price and Stock

    Samtec Inc MPCC-2-16-2-T-46-35.00-S

    Cable Assembly Discrete Wire 0.889m 14AWG/26AWG (4Power/16Signal) POS Power RCP - Bulk (Alt: MPCC-2-16-2-T-46-35.00-S)
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    Master Electronics MPCC-2-16-2-T-46-35.00-S
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    Samtec Inc MPCC-2-24-2-T-46-35.00-S

    Cable Assembly Discrete Wire 0.889m 14AWG/26AWG (4Power/24Signal) POS Power RCP - Bulk (Alt: MPCC-2-24-2-T-46-35.00-S)
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    Master Electronics MPCC-2-24-2-T-46-35.00-S
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    Samtec Inc MPCC-2-24-2-T-46-35.00-D-NUS

    Cable Assembly Discrete Wire 0.889m 14AWG/26AWG (4Power/24Signal) POS Power to (4Power/24Signal) POS Power RCP-RCP - Bulk (Alt: MPCC-2-24-2-T-46-35.00-D-NUS)
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    Samtec Inc MPCC-2-16-2-T-46-35.00-D-NUS

    Cable Assembly Discrete Wire 0.889m 14AWG/26AWG (4Power/16Signal) POS Power to (4Power/16Signal) POS Power RCP-RCP - Bulk (Alt: MPCC-2-16-2-T-46-35.00-D-NUS)
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    TURCK Inc NI 5-G12-AN6 50MM (ALTERNATE: T4635300)

    ProXimity Sensor, 5mm Sensing Distance, 12mm Barrel, NO, NPN, Non-Flush | Turck NI 5-G12-AN6 50MM
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    RS NI 5-G12-AN6 50MM (ALTERNATE: T4635300) Bulk 1 1
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    T4635 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    NI 5-G12-AP6X-H1141

    Abstract: T4635690
    Text: Housing Style Part Number 12 mm - Embeddable, picofast Connection Bi 2-G12-AN6X-V1131 Bi 4-G12-AN6X-V1131 Bi 2-G12-AP6X-V1131 Bi 4-G12-AP6X-V1131 12 mm - Nonembeddable, picofast Connection Ni 5-G12-AN6X-V1131 ID Number T4635583 M1690707 T4606597 M1690703


    Original
    2-G12-AN6X-V1131 4-G12-AN6X-V1131 2-G12-AP6X-V1131 4-G12-AP6X-V1131 5-G12-AN6X-V1131 T4635583 M1690707 T4606597 M1690703 T4635721 NI 5-G12-AP6X-H1141 T4635690 PDF

    5-G12-AP6X-V1131

    Abstract: NI 5-G12-AP6X-H1141 2-G12K-AP6X-H1141 5-G12-Y0-H1141 5G12A turck 1-800-544-7769 4G12A t10055 M1690703
    Text: Housing Style Part Number 12 mm - Embeddable, picofast Connection Bi 2-G12-AN6X-V1131 Bi 4-G12-AN6X-V1131 Bi 2-G12-AP6X-V1131 Bi 4-G12-AP6X-V1131 12 mm - Nonembeddable, picofast Connection Ni 5-G12-AN6X-V1131 ID Number T4635583 M1690707 T4606597 M1690703


    Original
    5-G12-Y0-H1141 2-G12K-AP6X-H1141 T1005594 M4670260 2-G12-AN6X-V1131 4-G12-AN6X-V1131 T4635583 M1690707 2-G12-AP6X-V1131 4-G12-AP6X-V1131 5-G12-AP6X-V1131 NI 5-G12-AP6X-H1141 5G12A turck 1-800-544-7769 4G12A t10055 M1690703 PDF

    T4205030

    Abstract: T4635400 t1690 T4010000 T4670250 T130-40
    Text: Housing Style 12 mm - Embeddable, Potted-In Cable 12 mm - Embeddable, Potted-In Cable Part Number ID Number Features Sen s Ran ing ge m m Inductive Sensors Bi 3-GT12K-AD4X/S1610 T4405083-2 armorguard 3 Bi 2-EG12HK-AN6X/S1589 Bi 2-G12K-AN6X Bi 4-G12K-AN6X


    Original
    T4405083-2 T4605192 T4671200 T4670251 2-G12K-AP6X 4-G12K-AP6X T4670200 T4670250 2-EG12-Y0X 2-G12-Y0 T4205030 T4635400 t1690 T4010000 T4670250 T130-40 PDF

    quad port ram

    Abstract: DS2015 32-PIN D062 DS1206 DS2011 DS2012 DS2012R
    Text: DALLAS SEMICONDUCTOR CORP OTE D | S b m i 3 G 0DDE12b 0 I T '^ 6 '3 5 & Dallas Semiconductor 4 096x9 FIFO PRELIMINARY : DS2012 28-Pin DIP DS2012R 32-Pin PLCC a“ FEATURES PIN CONNECTIONS • First-in, first-out memory based architecture • Flexible 4096 x 9 organization


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    4096x9 DS2012 28-Pin DS2012R 32-Pin T-46-35 0DQ2137 DS2015 quad port ram DS2015 D062 DS1206 DS2011 PDF

    TS93C46

    Abstract: TS93C46CP 9346 EEPROM TS93C46C S1063 NMC9346 11XXXXX
    Text: 7 C 5C)537 DQ5753M 3 • S C S -T H O M S O N S G S-THOMSON _ TS93C46 3QE 5 1K BIT SERIAL CMOS EEPROM ■ H IG H L Y R E L IA B L E C M O S F L O A T IN G G A T E TEC H N O LO G Y. ■ S IN G L E 5 -V O L T S U P P L Y ■ E IG H T P IN P A C K A G E .


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    TS93C46 64x16 128x8 7CJ2C1237J3027S4P T-46-35 TS93C46CP TS93C46VP p001-f/6 TS93C46 9346 EEPROM TS93C46C S1063 NMC9346 11XXXXX PDF

    1DT7

    Abstract: 72125
    Text: INTEGRATED 3ÔE D • 4ÛSS771 ÜQDhBQS 3 ■ IDT _ T - H f e - S S - DEVICE CMOS PARALLEL-TO-SERIAL FIFO IDT721Q5 IDT72115 IDT72125 256 x16, 512x16,1024x 16 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • •


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    SS771 512x16 1024x IDT721Q5 IDT72115 IDT72125 50MHz 28-pin 28pin 32-pin 1DT7 72125 PDF

    Untitled

    Abstract: No abstract text available
    Text: . New Data File Number CD54/74HC7030 CD54/74HCT7030 2122 HARRIS SEMICOND SECTOR 27E D E3 4302271 0016145 0 Hi H AS T -lC t-S S -M 5 ooT p u t 64-Word x 9-Bit FIFO Register; 3-State Type Features: -Q 0 DATA-OUT “ READY _ DATA-IN READY 92 C S - 4 2 6 6 0 FUNCTIONAL DIAGRAM


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    CD54/74HC7030 CD54/74HCT7030 64-Word 25-MHz 40-MHz TDC1030 PDF

    Untitled

    Abstract: No abstract text available
    Text: MICRON TECHNOLOGY INC 3ñE J> blllS M T I 00 0 3 0 7 Q 5 * M R N ADVANCE •• I. . " • " . {.i.MW-1 'M r-^ 4 -3 r 1K x 9 FIFO FIFO FEATURES PIN ASSIGNMENT Top View OPTIONS • Timing 15ns access time 20ns access time 25ns access time 35ns access time


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    PDF

    MSM514221-6

    Abstract: TMs4C1050 MSM514221
    Text: 4bE T> b72424G 0GlQ04b ATS « O K I J O K I semiconductor O K I MSM514221 SEMICONDUCTOR GROUP 262,263 w ords X 4 bits field memory GENERAL MSM514221 is a CMOS dynamic memory device organized as 256K+ 120 words by 4 bits; serial access memory that performs high speed, asynchronous read/write operation.


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    b724240 001004b MSM514221 300mil 16PIN-DIP. MSM514221 24EMQ 00100S2 MSM514221-6 TMs4C1050 PDF

    tba 180s

    Abstract: No abstract text available
    Text: 17E D ZIL06 INC • TJÄ4043 0G137Db S m il it a r y Z l l O g Z ' - p r o d u c t S ç e c liic a tio n ^ " ^ £ £ 0 ^ “T - q b ^ s October 1988 Z 8 0 3 8 /Z 8 5 3 8 M ilitary FIO FIFO In p u t/ O u tp u t Interface Unit FcaturM ■ 128-byte FIFO buffer provides asynchronous


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    ZIL06 0G137Db 128-byte Z8038/Z8538F10 Z0803804CM tba 180s PDF

    Untitled

    Abstract: No abstract text available
    Text: ÛUALITY SEM IC ON DU CT OR INC 41E D Q S7201, Q • ?4bEifiG3 OGQQMbl S M û S I QS7202 High Sp66d CMOS 9-bit FIFO Buffer Memories 512x9: 1Kx9: QS7201 QS7202 FEATURES/BENEFITS •15ns flag and data access times • Fully Asynchronous Read and Write I • Zero fall-through time


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    S7201, QS7202 Sp66d 512x9: QS7201 MIL-STD-883, mil/600 QS7201 PDF

    Untitled

    Abstract: No abstract text available
    Text: MICRON TECHNOLOGY INC SSE ]> blllSHT 00038^5 383 IMRN MT52C9020 2K x 9 FIFO 'T - M k - S S FIFO 2K x 9 FIFO FEATURES • • • • • • • • • • • Very high speed: 15,20,25 and 35ns access High-performance, low-power CMOS process Single +5V ±10% supply


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    MT52C9020 350mW 28-Pin MTS2C9Q80 PDF

    4635

    Abstract: T46-3 IDT7205
    Text: I II •. INTEGRATED 3ÛE D DEVICE '* ^ _ . a f i B ^ í f t E ü l m 4Ö5S771 Ü Ü G b S m 3 ■ IDT H F % - 35* CMOS PARALLEL FIRST-IN/FIRST-OUT FIFO 8192 x 9-BIT IDT72Ö5 FEATURES: DESCRIPTION: • First-1n/First-Out dual-port memory • 8192 x 9 organization


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    5S771 IDT7205 770mW IDT720X MIL-STD-883, 2S771 T-46-3 4635 T46-3 PDF

    S-2918

    Abstract: No abstract text available
    Text: SEIKO INSTRUMENTS U S A 31E D Bi 0123443 OODObOB 1 « S E I J S-2918R/I CMOS 1K-bit serial E2PROM Easy interface with serial port The S-2918R/I is a high speed, low power lK -b it E2PROM th a t uses th e CMOS flo atin g -g ate process. The organization is 128-w ordX 8-bit, and it is read or w ritten


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    S-2918R/I S-2918R/I 128-w 123M43 T-46-35 S-291BR/I S-2918 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA LOGIC/MEMORY MÔE D FEATURES IT O S E [ PIN CONFIGURATION •F irst-In F irst-O u t Buffer memory TC74AC9001P - 64 X 9 b it TC74AC9003P. 256X9 bit TC74AC9004P.512X9 bit •H igh Speed Operation Access Time tA = 25ns (TYP.) Flag


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    TC74AC9001P TC74AC9003P. 256X9 TC74AC9004P. 512X9 300mil 28pin 9003P 9004P PDF

    Untitled

    Abstract: No abstract text available
    Text: 6^1725 SN54ALS229A, SN74ALS229A 1 6 X 5 ASYNCHRONOUS FIRST-IN FIRST-OUT MEMORIES TEXAS INSTR A S I C / flEM0 R Y 2SE D SN54ALS229A . . . J PACKAGE SN74ALS229A . . . DW OR N PACKAGE muapenae.ni Asychronous Inputs and Outputs I D2876 , MARCH 1986 —REVISED MAY 1986


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    SN54ALS229A, SN74ALS229A SN54ALS229A D2876 15HQ1 PDF

    Untitled

    Abstract: No abstract text available
    Text: CYPRESS SEMICONDUCTOR 4 bE m D SSflThbS Q0G7173 T ^CYP CY7C401/CY7C403 CY7C402/GY7C404 CYPRESS SEMICONDUCTOR Cascadeablc 64 x 4 FIFO and 6 4 x 5 FIFO Features Functional Description • 64 x 4 CY7C401 an d CY7C403 64 x 5 (CY7C402 a n d CY7C404) H igh-speed first-irt first-o u t m em ory


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    Q0G7173 CY7C401/CY7C403 CY7C402/GY7C404 CY7C401 CY7C403) CY7C402 CY7C404) 7C401 7C403 7C402 PDF

    TSD231

    Abstract: No abstract text available
    Text: 13E D I TSD2310 O g DOSSI 5 | VITELIC CORP HF V IT E L IC V61C01 &V61C02 FAMILY HIGH PERFORMANCE LOW POWER 512 x 9 & 1024 x 9 BIT CMOS PARALLEL FIFO MEMORY •%£ Addressing is maintained internally by both ports so that data are stored and recovered sequentially by


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    TSD2310 V61C01 V61C02 V61C01, V61C01L) V61C02, V61C02L) V61C01 MK4501 TSD231 PDF

    Untitled

    Abstract: No abstract text available
    Text: I N T E G R A T E D DE V I C E 3ÔE D • 4A2S771 OODb^bH - r - ^ 8K X 9 & 16K X 9 CMOS PARALLEL IN-OUT FIFO MODULE T ■ - 3 5 IDT * IDT7MP2005 IDT7MP2Û11 In te g ra te d Device Technology, Inc. FEATURES: First-In/First-Out memory module 8K x 9 organization IDT7MP2005


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    4A2S771 IDT7MP2005 IDT7MP2005) IDT7MP2011) IDT7MP2005/7MP2011 7MP2005/ P2011 2S771 IDT7MP2005/2011 7MP2005 PDF

    Untitled

    Abstract: No abstract text available
    Text: 42E » JH SAMSUNG ELECTRONICS INC KM75C103A 7U_4'1.M2 _00].Ji5bS 3 M S M G K CMOS PROGRAMMABLE FLAG FIFO :%-zs P r o g r a m m a b le - F la g s , 2 K X 9 F IF O FEATURES DESCRIPTION • Flrst-ln-Flrst-Out Dual Port Memory —2 K x 9 Organization • Very High Speed independent of depth/width


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    KM75C103A --30ns 120mA 32-Pin T-46-35 PDF

    X24C02

    Abstract: No abstract text available
    Text: 3IE D XICOR INC *mi7M3 000270^ t PRELIMINARY INFORMATION Commercial Industrial 2K X24C02 X24C02I 256 x 8 Bit Electrically Erasable PROM TYPICAL FEATURES • Low Power CMOS —Active Current Less Than 1 mA —Standby Current Less Than 50 ju,A • Internally Organized 256 x 8


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    X24C02 X24C02I X24C02 X24C02, PDF

    x24c04i

    Abstract: No abstract text available
    Text: XICO R INC 31E Commercial Industrial 4K •W 1 7 4 3 D O D B ? 1^ X24C04 X24C04I 51 2x 8 Bit Electrically Erasable PROM TYPICAL FEATURES • Low Power CMOS —Active Current Less Than 1 mA —Standby Current Less Than 50 ju,A • Internally Organized as Two Pages


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    X24C04 X24C04I X24C04 X24C04, X24C04I_ x24c04i PDF

    CY7C425

    Abstract: CY7C420 CY7C429-30DC CY7C42I-25JI CY7C421-40DC CY7C421 CY7C429 IDT7201 IDT7203 CY7C429-30PC
    Text: 4bE D CYPRESS SSflTbbS □007117 5 OCYP CY7C420, CY7C421 CY7C424, CY7C425 CY7C428* CY7C429 SEMICONDUCTOR CYPRESS SEMICONDUCTOR Cascadeable 512 x 9 FIFO Cascadeable IK x 9 FIFO Cascadeable 2K x 9 FIFO 'T - 'A W • TTL compatible • Three-state outputs • Pin compatible and functional


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    CY7C420, CY7C421 CY7C424, CY7C425 CY7C428Â CY7C429 333-MHz 300-mil outpCY7C429 CY7C420 CY7C429-30DC CY7C42I-25JI CY7C421-40DC IDT7201 IDT7203 CY7C429-30PC PDF

    64-Word

    Abstract: No abstract text available
    Text: SEIKO INSTRUMENTS U S A BTE Ö123443 D DGOGSSl T « S E I J S-2911R/I { C M O S 1K-bit sériai E2PROM Gl code The S-2911R/I is a high speed, low power lK -b it E2pROM th a t uses th e CMOS flo atin g -g ate process. E ither 64wordX 16-bit or 128-w ordX 8-bit can be selected . It is


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    S-2911R/I S-2911R/I 64wordX 16-bit 128-w S-2911R S-2911I T-46-3S 64-Word PDF