MA7001
Abstract: l 0315
Text: MA7001 MA7001 Radiation Hard 512x9 Bit FIFO Replaces January 2000 version, DS3519-5.0 The MA7001 512 x 9 FIFO is manufactured using Dynex Semiconductor's CMOS-SOS high performance, radiation hard, 3µm technology. The Dynex Semiconductor Silicon-on-Sapphire process
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MA7001
512x9
DS3519-5
MA7001
1015n/cm2,
l 0315
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PDF
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SO56-2
Abstract: IDT7280 IDT7280L IDT7281 IDT7281L IDT7282 IDT7282L 7282
Text: IDT7280 IDT7281 IDT7282 CMOS DUAL ASYNCHRONOUS FIFO DUAL 256 x 9, DUAL 512 x 9, DUAL 1,024 x 9 Integrated Device Technology, Inc. FEATURES: • • • • • • • • • • • • • The 7280 is equivalent to two 7200 256x9 FIFOs The 7281 is equivalent to two 7201 512x9 FIFOs
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Original
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IDT7280
IDT7281
IDT7282
256x9
512x9
024x9
speed--15
SO56-2)
SO56-2
IDT7280
IDT7280L
IDT7281
IDT7281L
IDT7282
IDT7282L
7282
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PDF
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Untitled
Abstract: No abstract text available
Text: 57C4501-50/65/80 a High Density First-in First-out FIFO 512x9 CMOS Memory Ol Advance Information •*1 DISTINCTIVE CHARACTERISTICS RAM based FIFO 512x9 organization Cycle times of 65/80/100 nanoseconds Asynchronous and simultaneous writes and reads Low power consumption - 80 mA maximum
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57C4501-50/65/80
512x9
57C4501
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Untitled
Abstract: No abstract text available
Text: IN T E G R A T E D DEVICE, böE D MÛ 25 77 1 G D 1 3 77 Ö b2D CMOS SyncFlFO 64X9, 256x9, 512x9, 1024 X 9, 2048 X 9 and 4096 x 9 Integrated Device Technology, Inc. FEATURES: • • • • • • • • • • • • • • • • • • 64 x 9-bit organization IDT72421
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OCR Scan
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256x9,
512x9,
IDT72421)
IDT72201)
IDT72211)
IDT72221)
IDT72231)
IDT72241)
IDT72421/72201/72211)
IDT72221/72231/72241)
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PDF
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Z/tda 7281
Abstract: No abstract text available
Text: CMOS DUAL ASYNCHRONOUS FIFO DUAL 256 x 9, DUAL 512 x 9, DUAL 1024x9 IDT7280 IDT7281 IDT7282 PRELIMINARY INFORMATION FEATURES: • • • • • • • • • • • • The 7280 is equivalent to tw o 7200 256x9 FIFOs The 7281 is equivalent to tw o 7201 512x9 FIFOs
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OCR Scan
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1024x9
IDT7280
IDT7281
IDT7282
256x9
512x9
1024x9
IDT7280/7281/7282
4A2S771
0G2D42fl
Z/tda 7281
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY muMHS DATA SHEET_ _ L March 1994 6 7 2 0 1 /L 6 7 2 0 2 512x9 & 1Kx 9 / 3 . 3 VOLTS CMOS PARALLEL FIFO FEATURES . . . . . . . FIRST-IN FIRST-OUT DUAL PORT MEMORY SINGLE SUPPLY 3.3 ±0.3 VOLTS 512 x 9 ORGANISATION L 67201 1024 x 9 ORGANISATION (L 67202)
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OCR Scan
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512x9
67201L/202L
7201V/202V
67201/L
67202/R
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PDF
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Untitled
Abstract: No abstract text available
Text: Advanced Micro Devices Am4601 Programmable-Flags, 512 x 9 FIFO DISTINCTIVE CHARACTERISTICS • 512x9 RAM-based FIFO ■ 25 and 35 ns access times ■ ■ Two fixed flags; full and empty Two programmable flags; programmable from 1 to 511 ■ ■ Programmable polarity for all four flags
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OCR Scan
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Am4601
512x9
Am4601
11684D-11
11684D-14
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PDF
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t724
Abstract: 72221L12 811B
Text: CMOS SyncFlFO 6 4 X 9 , 256x9, 512x9, 1,024 X 9, 2,048 X 9, 4,096 x 9 and 8,192 x 9 I n t e g r a t e d D e v iz e T e c h n o lo g y , l i e . FEATURES: • • • • • • • • • • • • • • • • • • • • 64 x 9-bit organization IDT72421
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OCR Scan
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256x9,
512x9,
IDT72421
IDT72201
IDT72211
IDT72221
IDT72231
IDT72241
IDT72251
IDT72421)
t724
72221L12
811B
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PDF
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7C45
Abstract: MP 1008 es
Text: fax id: 5407 p v « *y 1 i. p X : CY7C451 CY7C453 CY7C454 - 512x9, 2Kx9, and 4Kx9 Cascadable Clocked FIFOs with Programmable Flags and write interfaces. Both FIFOs are 9 bits wide. The GY7G451 has a 512-word by 9-bit memory array, the CY7C453 has a 2048-word by 9-bit memory array, and the
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CY7C451
CY7C453
CY7C454
512x9,
7C45
MP 1008 es
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PDF
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Untitled
Abstract: No abstract text available
Text: d a ta s h e e t_M 67201 A /M 6 7 2 0 2 A 512x9 & 1K x 9 CMOS PARALLEL FIFO FEATURES . • . ■ FIRST-IN FIRST-OUT DUAL PORT MEMORY 512 x 9 ORGANISATION M 67201 A 1024 x 9 ORGANISATION (M 67202A) FAST ACCESS TIME 20*, 25, 35, 45, 55 NS, COMMERCIAL,
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512x9
7202A)
67201AL/202AL
67201AV/202AV
7201A/M
7202A/Rev
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PDF
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Untitled
Abstract: No abstract text available
Text: MT52C9005 512 x 9 FIFO MICRON FIFO 512x9 FIFO FEATURES • • • • • • • • • • • Very high speed: 1 5,20, 25 and 35ns access High-perform ance, low-power CM OS process Single +5V +10% supply Low power: 5mW typ. (standby ; 350mW typ. (active)
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MT52C9005
350mW
512x9
28-Pin
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PDF
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Untitled
Abstract: No abstract text available
Text: european space agency agence spatiale européenne Pages 1 to 66 INTEGRATED CIRCUITS, SILICON MONOLITHIC, CMOS SILICON GATE, STATIC 512x9 BIT FIRST IN, FIRST OUT MEMORY WITH 3-STATE OUTPUTS, BASED ON TYPE M67201FV ESA/SCC Detail Specification No. 9301/041
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512x9
M67201FV
CKBD-000
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PDF
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512X9
Abstract: No abstract text available
Text: S E M I C O N D U C T O R S PRELIMINARY MU9C0591, MU9C1902, MU9C2903, MU9C4904 512X9, 1KX9, 2KX9, AND 4K X 9 CMOS FIFOs! D DISTINCTIVE CHARACTERISTICS o High-speed First-in, First-out buffers o 20 ns Access time, 30 ns Cycle time 33 MHz) o 5 1 2 X 9 , 1 K X 9 , 2 K X 9 , and 4K X 9
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MU9C0591,
MU9C1902,
MU9C2903,
MU9C4904
512X9,
512X9
28-pin
32-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: MI CR ON T E C H N O L O G Y INC 0 0 0 5 6 3 5 Tfl4 5SE » IMRN MT52C9005 883C 512 x S FIFO IC R O N S MILITARY FIFO 512x9 FIFO AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD (consult factory) • JAN (consult factoiy) • MIL-STD-883, Class B
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MT52C9005
MIL-STD-883,
512x9
28-Pin
450mW
KTS2C90M
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PDF
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Untitled
Abstract: No abstract text available
Text: ÛUALITY SEM IC ON DU CT OR INC 41E D Q S7201, Q • ?4bEifiG3 OGQQMbl S M û S I QS7202 High Sp66d CMOS 9-bit FIFO Buffer Memories 512x9: 1Kx9: QS7201 QS7202 FEATURES/BENEFITS •15ns flag and data access times • Fully Asynchronous Read and Write I • Zero fall-through time
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S7201,
QS7202
Sp66d
512x9:
QS7201
MIL-STD-883,
mil/600
QS7201
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PDF
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Untitled
Abstract: No abstract text available
Text: QS72211, QS72221 ADVANCE INFORMATION Q High-Speed CMOS 512x9,1K X 9 Parallel Clocked FIFO QS72211 QS72221 FEATURES • • • • 15-ns 66 MHz read/write cycle times Synchronous/asynchronous read and write TTL compatible input and output levels Low power with industry-standard pinouts
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OCR Scan
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QS72211,
QS72221
512x9
QS72211
QS72221
15-ns
32-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: 2048x 9-BitRFO- Radiation Hardened 7203ERP CMOS epi Parallel Cascadeable FIFO DATA INPUTS ‘ D O -0 8 For Space Applications Ü WRITE POINTER s . RAM ARRAY 512x9 1024x9 2040x9 K= READ POINTER UJ-L1I I,I THREE El's 7 2 0 3 ERP (RP for STATE BUFFERS RAD-PAK ) high speed
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2048x
7203ERP
512x9
1024x9
2040x9
7203ERP
CY7C429
TD11241
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PDF
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Untitled
Abstract: No abstract text available
Text: V’hM w:&*f H Advanced Micro High Density First-In First-Out FIFO 512x9-Bit CMOS Memory Devices Am7201 DISTINCTIVE CHARACTERISTICS • Low power consumption • RAM based FIFO • 512x9 organization • Status flags - full, half-full, empty • Cycle times of 35/45/65/80/100 nanoseconds
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OCR Scan
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512x9-Bit
Am7201
512x9
CP-10M
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PDF
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Untitled
Abstract: No abstract text available
Text: CMOS SyncFIFO 64X9, 256x9, 512x9, 1024 X 9, 2048 X 9 and 4096 x 9 FEATURES: • • • • • • • • • • • • • • • • • • 64 x 9-bit organization IDT72421 256 x 9-bit organization (IDT72201) 512 x 9-bit organization (IDT72211)
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OCR Scan
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256x9,
512x9,
IDT72421)
IDT72201)
IDT72211)
IDT72221)
IDT72231)
IDT72241)
IDT72421/72201/72211)
IDT72221/72231/72241)
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PDF
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Untitled
Abstract: No abstract text available
Text: bbE D INTEGRATED DEVICE • MÛES771 0D1251S 7*10 « I D T CMOS SyncFlFO 6 4 X 9 , 2 56 x9 , 512x9 , 1024 X 9, 2048 X 9 and 4096 x 9 Out FIFO memories with clocked read and write controls. The IDT72421/72201/72211/72221/72231/72241 have a 64, 256, 512, 1024, 2048, and 4096 x 9-bit memory array,
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OCR Scan
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ES771
0D1251S
512x9
IDT72421/72201/72211/72221/72231/72241
IL-STD-883,
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA LOGIC/MEMORY MÔE D FEATURES IT O S E [ PIN CONFIGURATION •F irst-In F irst-O u t Buffer memory TC74AC9001P - 64 X 9 b it TC74AC9003P. 256X9 bit TC74AC9004P.512X9 bit •H igh Speed Operation Access Time tA = 25ns (TYP.) Flag
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OCR Scan
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TC74AC9001P
TC74AC9003P.
256X9
TC74AC9004P.
512X9
300mil
28pin
9003P
9004P
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PDF
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FIFO 512x9
Abstract: No abstract text available
Text: Deep First-In First-Out FIFO 5 1 2 x 9 C M O S Mem ory 67C4501 -2 5 /3 5 / 5 0 / 6 5 / 8 0 Ordering Inform ation Features • Ram-based FIFO • 512x9 organization • Cycle times of 35/45/65/80/100 nanoseconds • Asynchronous and simultaneous writes and reads
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OCR Scan
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512x9
67C4501
FIFO 512x9
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PDF
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AM7203
Abstract: No abstract text available
Text: H Advanced Micro Devices Am7201 -25/35/50/65/80 C M O S First-In First Out FIFO 512x9-Bit Buffer DISTINCTIVE CHARACTERISTICS • RAM baaed FIFO • Statu* flag« - full, half-full, empty • 512x9 organization • Retransmit capability • Cycle tim e* of 35/45/65/80/100 nanoseconds
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OCR Scan
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Am7201
512x9-Bit
512x9
AM7203
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PDF
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Untitled
Abstract: No abstract text available
Text: Hm m electronic June 1992 M 67201 HI-REL DATA SHEET_ 512x9 CMOS PARALLEL FIFO FEATURES FIRST-IN FIRST-OUT DUAL PORT MEMORY . EMPTY, FULL AND HALF FLAGS IN SINGLE DEVICE MODE WIDE TEMPERATURE RANGE : - 55°C TO + 125°C . RETRANSMIT CAPABILITY . BI-DIRECTIONAL APPLICATIONS
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OCR Scan
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512x9
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PDF
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