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    FM93CS46M8 Rochester Electronics LLC EEPROM, 64X16, Serial, CMOS, PDSO8, 0.150 INCH, PLASTIC, SO-8 Visit Rochester Electronics LLC Buy
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    SMC Corporation of America CG5BN40TNSV-64-X165US

    CYLINDER, AIR, STAINLESS STEEL, CG5 SERIES | SMC Corporation CG5BN40TNSV-64-X165US
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    SMC Corporation of America CG5BA40TNSV-64-X165US

    CYLINDER, AIR, STAINLESS STEEL, CG5 SERIES | SMC Corporation CG5BA40TNSV-64-X165US
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    SMC Corporation of America CDG5EA63TNSR-864-X165US

    CYLINDER, AIR, STAINLESS STEEL, CG5 SERIES | SMC Corporation CDG5EA63TNSR-864-X165US
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    SMC Corporation of America CDG5LA100TNSR-864-X165US

    CYLINDER, AIR, STAINLESS STEEL, CG5 SERIES | SMC Corporation CDG5LA100TNSR-864-X165US
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    SMC Corporation of America CDG5BA100TNSR-864-X165US

    CYLINDER, AIR, STAINLESS STEEL, CG5 SERIES | SMC Corporation CDG5BA100TNSR-864-X165US
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    64X16 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FM93C46

    Abstract: No abstract text available
    Text: FM93C46 1K-Bit Serial CMOS EEPROM MICROWIRE Bus Interface General Description Features The FM93C46 device is 1024 bits of CMOS non-volatile electrically erasable memory organized as 64x16 bit array. They are fabricated using Fairchild Semiconductor's floating-gate CMOS


    Original     		PDF FM93C46 64x16 FM93C46

    Untitled

    Abstract: No abstract text available
    Text: ST93C46TM6 IL00 * C-MOS 1K 64 x 16 OR 128 x 8 -BIT EEPROM —TOP VIEW— DU 1 8 2 VDD(+7V) ORG IN GND 7 8 5 3 S IN 3 6 Q OUT C IN 4 5 D IN 8 ORG 5 D S C MEMORY ARRAY 128X8 OR 64X16 Q 6 D S C INPUT C D ORG S ; ; ; ; OUTPUT Q ; SERIAL DATA SERIAL CLOCK


    Original     		PDF ST93C46TM6 128X8 64X16

    Untitled

    Abstract: No abstract text available
    Text: CAT59C11HK * IL08 C-MOS 1K-BIT 64x16 /128x8 BIT SERIAL EEPROM -TOP VIEW- CS IN 1 CK IN V DD(+5V) 8 2 DI IN 7 3 6 DO OUT 4 GND 5 3 RY/BY 4 DI DO CK RY/BY 2 CS 1 ORG IN 7 ORG 6 CK ;CLOCK INPUT ;CHIP SELECT INPUT CS DI ;SERIAL DATA INPUT DO ;SERIAL DATA OUTPUT


    Original     		PDF CAT59C11HK 64x16 /128x8 64x16 128x8

    IN93AA

    Abstract: IN93LC46 IN93AA46A IN93LC46A IN93AA46CD IN93AA46
    Text: IN93LC46N, IN93LC46D, IN93AA46N, IN93AA46D 1K-BIT SERIAL EEPROM WITH MICROWIRE INTEFACE compatible to САТ93С46 Catalyst DESCRIPTION The IN93LC46 is a Electric erasable programmable ROM (EEPROM) memory data capacity 1K (128x8 or 64x16) with 3-wire interface.


    Original     		PDF IN93LC46N, IN93LC46D, IN93AA46N, IN93AA46D IN93LC46 128x8 64x16) IN93AA 46AD/AN IN93AA46A IN93LC46A IN93AA46CD IN93AA46

    TUSB2140B

    Abstract: CRYSTAL 20 mhZ 4 pins
    Text: TUSB2046B 4-PORT HUB FOR THE UNIVERSAL SERIAL BUS WITH OPTIONAL SERIAL EEPROM INTERFACE SLLS413 – FEBRUARY 2000 D D D D D D D D D D D D D D D D D D VF PACKAGE TOP VIEW SUSPND TSTMODE XTAL1 XTAL2 GND TSTPLL/48MCLK EXTMEM VCC D Universal Serial Bus (USB) Version 1.1


    Original     		PDF TUSB2046B SLLS413 32-Pin TUSB2140B CRYSTAL 20 mhZ 4 pins

    EEPROM MARKING L46

    Abstract: rl46 MARKING L66 EEPROM RL56 eeprom EEPROM MARKING rl56 RL66 EEPROM IC rl46 BR93L56
    Text: Datasheet Serial EEPROM Series Standard EEPROM Microwire BUS EEPROM 3-Wire BR93Lxx-W ●General Description BR93Lxx-W is serial EEPROM of serial 3-line interface method ●Features „ 3-line communications of chip select, serial clock, serial data input / output (the case where input and output are shared)


    Original     		PDF BR93Lxx-W BR93Lxx-W 16Kbit EEPROM MARKING L46 rl46 MARKING L66 EEPROM RL56 eeprom EEPROM MARKING rl56 RL66 EEPROM IC rl46 BR93L56

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    HDR 2x5

    Abstract: LM3S9B90 pad DIAGRAM for RJ45 on pc board jtag cortex schematic 0603 smt resistor TP10 ftdi mdio example serial programmer schematic diagram UART Program Examples TI
    Text: Stellaris EK-LM3S9B90 Evaluation Kit User ’s Manual EK-LM3S9B90 -0 4 Co pyrigh t 2 009– 201 0 Te xas In strumen ts Copyright Copyright © 2009–2010 Texas Instruments, Inc. All rights reserved. Stellaris and StellarisWare are registered trademarks of Texas Instruments.


    Original     		PDF EK-LM3S9B90 LM3S9B90 HDR 2x5 pad DIAGRAM for RJ45 on pc board jtag cortex schematic 0603 smt resistor TP10 ftdi mdio example serial programmer schematic diagram UART Program Examples TI

    Untitled

    Abstract: No abstract text available
    Text: f Y H T1627 RAM Mapping 64x16 LCD Controller for I/O liC H B L T E K Features • • • • • • • • • • • O perating voltage: 2.7V-5.2V B uilt-in RC oscillator 1/5 bias, 1/16 duty, fram e frequency is 64Hz Max. 64x16 patterns, 16 commons, 64 segments


    OCR Scan     		PDF T1627 64x16 32kHz HT1627 HT1627.

    BR93C46

    Abstract: BR93C46F
    Text: MDE D m 7fl2aeH t OOOmm 2 • RHM ROHM CO L T D IC /M e m o ry !Cs BR93C46 IK fcf"J h CM O S 5V v y T J l EEPROM 64X16 Bit 5V EEPROM T-44-/3-27 • W F iri'ji0 /D im e n s io n s Unit : mm) BR93C46 ( i , 1024 bf-y h ? CMOS * >J (EEPROM) T 'f o > i ' J 8 1 $ l i , 64 U ' s Z f X 16 fcf-y h t S i t i U ,


    OCR Scan     		PDF BR93C46 64X16 T-44-/3-27 BR93C46) BR93C46 /D15YD14Y T-46-13-27 BR93C46F

    T93C46A

    Abstract: No abstract text available
    Text: SGS-THOMSON ST93C46A M 1 KBITS 64x16 or 128x8 SERIAL ACCESS CMOS EEPROM MEMORY PRELIMINARY DATA HIG HLY INCREASED RELIABILITY OF CMOS EEPROM TECHNOLOGY. OVER 1 M ILLION ERASE/WRITE CYCLES. OVER 10 YEARS DATA RETENTION. 64 X 16 OR 128 X 8 M EMORY FORMAT USER


    OCR Scan     		PDF ST93C46A 64x16 128x8) ST93C46A T93C46A

    BR6216A-15L

    Abstract: EEPROM Capacity 24L04 2864a-25 BR6216A
    Text: 7fl5fl'ì'ìcì ODDbTOB 711 Memory ICs ROHM CO LTD [EEPROM 5bE D •Serial EEPROM Capacity Type Bit) Composition (Woid X Bit) BR 93LC 46/F 1K BR93LC46A/AF 64X16 2K BR 93LC 56/F vire iystem 128x16 BR93LC56A/AF BR9041A/ARF 4K BR93LC66/RF 256X16 BR93LC66A/ARF


    OCR Scan     		PDF BR93LC46A/AF BR9021B/BF BR93LC56A/AF BR9041A/ARF BR93LC66/RF BR93LC66A/ARF 24L01A BR28C64-150 BR28C16A-150 864A-250 BR6216A-15L EEPROM Capacity 24L04 2864a-25 BR6216A

    59C22

    Abstract: No abstract text available
    Text: Features • Low Voltage and Standard Voltage Operation - 5.0 Vcc = 4.5V to 5.5V - 2.7 (Vcc = 2.7V to 5.5V) - 2.5 (Vcc = 2.5V to 5.5V) • User Selectable Internal Organization - 1K: 12 8x 8 or 64x16 - 2K: 2 5 6 x 8 or 128x16 - 4K: 5 1 2 x 8 or 256x16 • 4-Wire Serial Interface


    OCR Scan     		PDF 64x16 128x16 256x16 128x16) 256x16) 0173K 07/98/xM 59C22

    93C46T

    Abstract: FM93C46 FM93C46E FM93C46V M08A MTC08
    Text: E M I C O N D U C T O R TM 1 K-Bit Serial CMOS EEPROM FM93C46 1 K-Bit Serial CMOS EEPROM MICROWIRE Bus Interface Features The FM93C46 device is 1024 bits of CM OS non-volatile electri­ cally erasable m em ory organized as 64x16 bit array. T hey are fabricated using Fairchild Sem iconductor's floating-gate CMOS


    OCR Scan     		PDF FM93C46 FM93C46 64x16 93C46T FM93C46E FM93C46V M08A MTC08

    HT1642

    Abstract: No abstract text available
    Text: H D L T E K H T 1 6 4 7 n r ^ 4-Level Gray Scale 64x16 LCD Controller for I/O |uC Features • • • • • • • • • • • • • • • O perating voltage: 2.7V-5.2V B uilt-in 32kHz RC oscillator E xtern al 32.768kHz crystal oscillator or 32kHz frequency source in p u t


    OCR Scan     		PDF 64x16 100-pin 32kHz 768kHz HT1647 HT1647. HT1642

    Untitled

    Abstract: No abstract text available
    Text: H O L T E K r H T 1 6 4 7 r 4-Level Gray Scale & ECB-type 64x16 LCD Controller for I/O iC Features • • • • • • • • • • • • • O p e ra tin g voltage: 2.7V~5.2V B u ilt-in 32kH z RC o scillator E x te rn a l 32.768kH z c ry sta l o scillato r or


    OCR Scan     		PDF 64x16 768kH 64x16x2 T1647.

    Untitled

    Abstract: No abstract text available
    Text: FM93C46 1K-Bit Serial CMOS EEPROM MICROWIRE Bus Interface General Description Features The FM93C46 device is 1024 bits of CMOS non-volatile electri­ cally erasable memory organized as 64x16 bit array. They are fabricated using Fairchild Semiconductor's floating-gate CMOS


    OCR Scan     		PDF FM93C46 FM93C46 64x16

    64x16

    Abstract: 8DIP 28-DIP KM28C64B 128X16
    Text: FUNCTION GUIDE MEMORY ICs 2.5 EEPROM 2 K b it 64K bit Remark 16x16 1MHz CMOS Ext.-timed 8DIP/8SOP Now 1MHz CMOS Self-timed 8DIP/8SOP Now KM93C46/G/GD/I 64x16 1MHz CMOS Self-timed 8DIP/8SOP Now KM93C46V/VG/VGD/I 64x16 250KHZ CMOS 3-OV-Operation 8DIP/8SOP Now


    OCR Scan     		PDF KM93C06/G/GD/I KM93C07/G/GD/I 16x16 16x16 KM93C46/G/GD/I KM93C46V/VG/VGD/I 64x16 128x8 250KHZ 8DIP 28-DIP KM28C64B 128X16

    d15x8

    Abstract: No abstract text available
    Text: AT59C11/22/13 Features • Low Voltage and Standard Voltage Operation 5.0 V Vcc = 4.5 V to 5.5 V 3.0 V (Vcc = 2.7 V to 5.5 V) 2.5 V (Vcc = 2.5 V to 5.5 V) 2.0 V (Vcc = 1.8 V to 5.5 V) • User Selectable Internal Organization 1K: 128x8 or 64x16 2K: 256 x 8 or 128x16


    OCR Scan     		PDF AT59C11/22/13 128x8 64x16 128x16 64x16) AT59C11/22/13 -10PI-2 AT59C13W-10SI-2 AT59C13-10PI-2 d15x8

    ST93C46AB1

    Abstract: No abstract text available
    Text: SCS-THOMSON ST93C46A ILI 1 KBITS 64x16or 128x8 SERIAL ACCESS CMOS EEPROM MEMORY PRELIM INARY DATA HIGHLY INCREASED RELIABILITY OF CMOS EEPROM TECHNOLOGY. OVER 1 MILLION ERASE/WRITE CYCLES. OVER 10 YEARS DATA RETENTION. 64 X 16 OR 128 X 8 MEMORY FORMAT USER


    OCR Scan     		PDF ST93C46A 64x16or 128x8) ST93C46A ST93C46AB1 ST93C46AB6

    Untitled

    Abstract: No abstract text available
    Text: AT59C11/22/13 Features • Low Voltage and Standard Voltage Operation 5.0 Vcc = 4.5V to 5.5V 2.7 (Vcc = 2.7V to 5.5V) 2 5 (Vcc = 2.5V to 5.5V) 1.8 (Vcc = 1.8V to 5.5V) • User Selectable Internal Organization 1K: 128x8 or 64x16 2K: 256 x 8 or 128x16 4K: 512x8 or 256x16


    OCR Scan     		PDF AT59C11/22/13 128x8 64x16 128x16 512x8 256x16 64x16) AT59C11/22/13 AT59C13-1 AT59C13W-10SI-2

    BR6265AF-10SL

    Abstract: BR6265A-10LL BR6265A 128x16
    Text: rahm EEPROM Operating voltage Organization Word X Bit Part No. (Bit) Cuient conamptonWa) Power Active Stand-by Write cycle time(Max) supply(V) Read(V) Write(V) (mA) <*A) 2 1 .8-4.0 1.8—4.0 2 1 25 2V 64X16 3 2 .0 -5 .5 2.7— 5.5 2 3 25 3V 5 2.0— 5.5


    OCR Scan     		PDF 64X16 128X16 256X16 BR93LL46F BR93LC46/F BR93LC46A/AF BR93LL56/F BR93LC56/F BR93LC56A/AF BR6265AF-10SL BR6265A-10LL BR6265A

    IC CD 4033 pin diagram

    Abstract: IC CD 4033 pin configuration
    Text: H B L T E K f V H T16274 RAM Mapping 64x16 LCD Controller for I/O ^iC Features • • • • • • • • • • • • O perating voltage: 2.7V-5.2V B uilt-in 32kHz RC oscillator E xtern al 32.768kHz crystal oscillator or frequency source in p u t


    OCR Scan     		PDF HT16274 64x16 32kHz 768kHz l/16s 128Hz l/32s 1110-0000-XXXX 1110-0011-XXXX IC CD 4033 pin diagram IC CD 4033 pin configuration

    MSC5301B-01GS-BK

    Abstract: 11 pin 8 segment LcD MSC5301B-01 QFP100-P-1420-BK C14EE
    Text: O K I Semiconductor MSC5301B-01 COMMON/SEGMENT DRIVER WITH RAM GENERAL DESCRIPTION The MSC5301B-01 is an LCD driver LSI w ith a built-in RAM. The device's bit m apping m ethod offers greater flexibility in w hich each bit of the RAM for display controls each section on the LCD


    OCR Scan     		PDF MSC5301B-01 MSC5301B-01 100-pin QFP100-P-1420-BK) MSC5301B-01GS-BK) 002300b MSC5301B-01GS-BK 11 pin 8 segment LcD QFP100-P-1420-BK C14EE