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    T35 DIODE Search Results

    T35 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    T35 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TANTALUM capacitor 685 35K

    Abstract: 335 35K 685k 100v capacitor a564 transistor capacitor 336 35K 102 capacitor 226 35K 022 electrolytic cat 7199 ca K277 capacitor 685 35K 106 16k
    Text: F-3100C 5/99 KEMET CAPACITORS Parts shown are actual size KEMET also manufactures Ceramic Leaded, and Surface Mount Capacitors — Tantalum and Ceramic. Refer to Catalog F-3101 — Ceramic Leaded, and F-3102 — Surface Mount Capacitors for detailed information on these products. GR500


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    PDF F-3100C F-3101 F-3102 GR500 F-2956 T110/T212 CSR13) MIL-C-39003/1 TANTALUM capacitor 685 35K 335 35K 685k 100v capacitor a564 transistor capacitor 336 35K 102 capacitor 226 35K 022 electrolytic cat 7199 ca K277 capacitor 685 35K 106 16k

    a564 transistor

    Abstract: a684 transistor cat 7199 ca transistor a564 capacitor 226 35K 022 electrolytic transistor a684 A564 transistor datasheet up board exam date sheet 2012 D5653 B824 transistor
    Text: TANTALUM LEADED CAPACITORS To find parts fast, visit at www.kemet.com. F-3100D 09/01 KEMET CAPACITORS Parts shown are actual size Due to ever changing technology, all series may not be depicted. Kemet Electronics Corporation P.O. Box 5928 • Greenville, SC 29606 • Tel: 864-963-6300


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    PDF F-3100D T110/T212 CSR13) MIL-C-39003/1 T111/T213 CSR91) MIL-C-39003/4 a564 transistor a684 transistor cat 7199 ca transistor a564 capacitor 226 35K 022 electrolytic transistor a684 A564 transistor datasheet up board exam date sheet 2012 D5653 B824 transistor

    106 16k

    Abstract: capacitor 226 35K 022 electrolytic 335 35K TANTALUM capacitor 685 35K a564 transistor T35 diode transistor a564 B824 transistor a684 transistor XC 7270
    Text: INDEX Tantalum Hermetically Sealed/Axial Capacitors Military Ordering Information 4 Military Marking Information 4 Military Approval Levels 5 Performance Characteristics 5 T110/T212 CSR13 MIL-PRF-39003/1 Series Outline Drawing 6 Dimensions 6 Ordering & T110 Marking Information


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    PDF T110/T212 CSR13) MIL-PRF-39003/1 T111/T213 CSR91) MIL-PRF-39003/4 CSR09) MIL-PRF-39003/2 T140/T242 CSR23) 106 16k capacitor 226 35K 022 electrolytic 335 35K TANTALUM capacitor 685 35K a564 transistor T35 diode transistor a564 B824 transistor a684 transistor XC 7270

    B824 transistor

    Abstract: a564 transistor 335 35K 106 16k radial capacitor Thomson TH 5221 transistor a564 pc 8178 T110A335J015AS a684 transistor
    Text: INDEX Tantalum Hermetically Sealed/Axial Capacitors Military Ordering Information 4 Military Marking Information 4 Military Approval Levels 5 Performance Characteristics 5 T110/T212 CSR13 MIL-PRF-39003/1 Series Outline Drawing 6 Dimensions 6 Ordering & T110 Marking Information


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    PDF T110/T212 CSR13) MIL-PRF-39003/1 T111/T213 CSR91) MIL-PRF-39003/4 CSR09) MIL-PRF-39003/2 T140/T242 CSR23) B824 transistor a564 transistor 335 35K 106 16k radial capacitor Thomson TH 5221 transistor a564 pc 8178 T110A335J015AS a684 transistor

    transistor a564

    Abstract: a564 transistor a684 transistor CIR 2262 transistor a684 cat 7199 ca transistor b564 5252 f 0917 capacitor 336 35K 102 CSR 6026
    Text: INDEX Tantalum Hermetically Sealed/Axial Capacitors Military Ordering Information 4 Military Marking Information 4 Military Approval Levels 5 Performance Characteristics 5 T110/T212 CSR13 MIL-C-39003/1 Series Outline Drawing 6 Dimensions 6 Ordering & T110 Marking Information


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    PDF T110/T212 CSR13) MIL-C-39003/1 T111/T213 CSR91) MIL-C-39003/4 CSR09) MIL-C-39003/2 T140/T242 CSR23) transistor a564 a564 transistor a684 transistor CIR 2262 transistor a684 cat 7199 ca transistor b564 5252 f 0917 capacitor 336 35K 102 CSR 6026

    1N5426

    Abstract: 1n5208 1N458B 1N5209 1n890 1N456A
    Text: SWITCHING DIODES 200mW Part* Peak Voltage Continous Reverse Current L NA V <V> R W 1N914 1N914A 1N914B 100 100 100 @ Forward Voltage V„(V) V (V) F 5000 @ 75 5000 @ 75 5000 @ 75 1.0 1.0 1.0 @ Capacitance C Maximum L (MA) Reverse Recovery Time (PF) F @ 10


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    PDF 200mW 1N914 1N914A 1N914B 500mW 1N4148 1N4151 1N4154 1N4448 1N4454 1N5426 1n5208 1N458B 1N5209 1n890 1N456A

    1N5426

    Abstract: 1N5208 AMERICAN POWER DEVICES 1n914
    Text: AMERICAN POWER DEVICES S3E D -7~02>-O ? 0737135 00000S3 0 • P L A N A R DIODES Type 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N458B 1N619 1N890 1N914 1N3062 1N3064 1N3147 1N3600 1N3602 1N3605 1N4009 1N4148 1N4149 1N4150 Peak Minimum Inverse Forward Voltage Current


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    PDF 00000S3 DO-35 400mW 1N4150 1N4152 1N4153 1N4305 DO-35 1N5426 1N5208 AMERICAN POWER DEVICES 1n914

    BZX46

    Abstract: BZX46C30
    Text: I T T fl7 SEMICONDUCTORS dE I MbflM'lSS 000E33E □ | -r « ZENER DIODES BZX46 Series 500 mW Glass Zener Diodes in DO-35 Package Ta = 25 °C Type BZX46-C2V7 BZX46-C3V0 BZX46-C3V3 BZX46-C3V6 BZX46-C3V9 BZX46-C4V3 BZX46-C4V7 BZX46-C5V1 BZX46-C5V6 BZX46-C6V2


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    PDF 000E33E BZX46 DO-35 BZX46-C2V7 BZX46-C3V0 BZX46-C3V3 BZX46-C3V6 BZX46-C3V9 BZX46-C4V3 BZX46-C4V7 BZX46C30

    T35 diode

    Abstract: diode T35 high voltage diode T35 L501130 FDH3595 MMBD7000 MMBD1501-1505
    Text: S e m i c o n d u c t o r " FDH3595 & Discrete POW ER & Signal Technologies „ . . National FDH3595 High Conductance Low Leakage Diode Sourced from Process 1M. See MMBD1501-1505 for characteristics. Absolute Maximum Ratings* Symbol TA = 25*C unless otherwise noted


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    PDF FDH3595 MMBD1501-1505 L501130 0040Sb3 T35 diode diode T35 high voltage diode T35 FDH3595 MMBD7000

    Silicon Schottky Diode sod123

    Abstract: SCHOTTKY BARRIER DIODE BAT56 T35 diode diode T35 -4-D6
    Text: Philips Semiconductors Preliminary specification Schottky barrier diode FEATURES BAT56 QUICK REFERENCE DATA • Low leakage current SYMBOL PARAMETER CONDITIONS MAX. UNIT continuous reverse voltage 60 V If continuous forward current 30 mA vF forward voltage


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    PDF BAT56 OD123 MBA038 OD123. 711Dfl2b Silicon Schottky Diode sod123 SCHOTTKY BARRIER DIODE BAT56 T35 diode diode T35 -4-D6

    C82 diode

    Abstract: marking T34 DZ89-C5V1 DZ89-C18 s5 89A DZ89-C3V9 DZ89-C4V3 DZ89-C4V7 DZ89-C5V6 DZ89-C6V2
    Text: DUAL ZENER DIODES ITT SEtllC O N D/ INTERM ETALL SGE D • Mbô2711 555 0GD2512 m IS I DZ89 Series 1W Dual Zener Diodes SOT-89A Plastic Package TA = 25 °C Two Zener diodes with common cathodes in one package. The common cathodes and the two anodes are each connected to a seperate pin.


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    PDF OT-89A DZ89-C3V9 DZ89-C4V3 DZ89-C4V7 DZ89-C5V1 DZ89-C5V6 DZ89-C6V2 DZ89-C56 DZ89-C62 DZ89-C68 C82 diode marking T34 DZ89-C18 s5 89A

    Untitled

    Abstract: No abstract text available
    Text: FAST RECOVERY DIODE C16T10F C16T20F C16T20F-11A 17.7A/100~ 200V/trr : 35nsec 4.8U89 . 1.4 .055) . I.2(.047) °¡SQUARE - PAK| TO-263AB (SMD) Packaged in 24mm Tape and Reel : C16T»«F o Dual Diodes — Cathode Common o Ultra - Fast Recovery 1.4C055) I 1.W.63Ô)


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    PDF C16T10F C16T20F C16T20F-11A A/100~ 00V/trr 35nsec O-263AB 4C055) 5C335) T0-220

    marking t17

    Abstract: ZENER 89A T29 marking DZ89-C51 T20 MARKING
    Text: Dual Zener Diodes DZ89 Series 800 mW Dual Zener Diodes SOT-89A Plastic Package TA = 25 °C Two Zener diodes with common cathodes in one package. The common cathodes and the two anodes are each connected to a seperate pin. Type Marking Code DZ89-C3V9 DZ89-C4V3


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    PDF OT-89A DZ89-C3V9 DZ89-C4V3 DZ89-C4V7 DZ89-C5V1 DZ89-C5V6 DZ89-C6V2 DZ89-C6V8 DZ89-C7V5 DZ89-C8V2 marking t17 ZENER 89A T29 marking DZ89-C51 T20 MARKING

    marking T28

    Abstract: T31 Marking sot regulator marking T34 T33 Marking sot regulator
    Text: ftlAIEf SURFACE MOUNT DUAL ZENER DIODES 1 WATT DUAL ZENER DIODES / SOT-89 Type Number Marking . V l l l i l l c l i =} | HU OPERATING/STORAGE TEMPERATURE RANGE -5 5 °C to +150°C Voltage Range Maximum Zener . Impedance Z Z T a t lz r Typical Temperature Coefficient


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    PDF OT-89 DZ89-C3V9 DZ89-C4V3 DZ89-C4V7 DZ89-C5V1 DZ89-C5V6 OZ89-C6V2 DZ89-C6V8 DZ89-C7V5 DZ89-C8V2 marking T28 T31 Marking sot regulator marking T34 T33 Marking sot regulator

    BYT 521

    Abstract: BYT 12 DIODE BYT 30PI- 400 B44 diode S60100
    Text: £ Z 7 S C S -T H O M S O N L I g « S Ä T# s B Y T 3 0 P I-2 0 0 -> 4 0 0 FAST RECOVERY RECTIFIER DIODES • ■ ■ ■ VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING INSULATED : Capacitance 15pF Insulating voltage 2500


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    PDF 30PI-200- 7TH1237 30PI-200 00b025fl BYT 521 BYT 12 DIODE BYT 30PI- 400 B44 diode S60100

    Untitled

    Abstract: No abstract text available
    Text: • 12.8 VOLT NOMINAL ZENER VOLTAGE 4 5=<•. 1N4896 ■TEMPERATURE COMPENSATED ZENER REFERENCE DIODES thru • LOW NOISE 1N4915A • METALLURGICALLY BONDED -1 • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Tem perature: -65°C to +175°C


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    PDF 1N4896 1N4915A 1N4896 1N4908â 1N4911 1N4912â 1N4915 230E554

    M49C

    Abstract: diodes 1N49A 17atm 1n4907 1N4896 1N4896A 1N4897 1N4897A 1N4898 1N4898A
    Text: • 12.8 VOLT NOMINAL ZENER VOLTAGE •+ 5=c 1N 4896 thru ■TEMPERATURE COMPENSATED ZENER REFERENCE DIODES 1N 4915A • LOW NOISE • METALLURGICALLY BONDED -1 • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C


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    PDF 1N4896 1N4915A 500mW ISI48S 1N490 1N4904â 1N4908â 1N4911 1N4912â 1N4915 M49C diodes 1N49A 17atm 1n4907 1N4896 1N4896A 1N4897 1N4897A 1N4898 1N4898A

    byv31

    Abstract: m2131 BYV31-500 BYV31-500U 2521a BYV31-300 M2130 56295b
    Text: BYV31 SERIES 5bE D PHILIPS INTERNATIONAL • 711DÔ2L 004135D bfifi BIPHIN T - 0 3 - t * J ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO—4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft recovery characteristic.


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    PDF BYV31 004135D T-03-l BYV31â M2133 M2132 M2130 m2131 BYV31-500 BYV31-500U 2521a BYV31-300 M2130 56295b

    Untitled

    Abstract: No abstract text available
    Text: 01E 3875081 G E SOLID STATE uptoeiectronic specifications _ HARRI S SEMI COND 3 7E SECTOR 43Q2571 » 0027134 Photon Coupled Isolator 4 N 2 5 -4 N 2 5 A -4 N 2 6 -4 N 2 7 -4 N 2 8 SYMBOL Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor


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    PDF 43Q2571 92CS-42662 92CS-429S1

    89a mark code smd

    Abstract: C15 DO-34 zener smd marking 183 DZ89-C9V1 C6V2 ST SMD marking code 55A mark code T18 Zener diode smd marking e2 DZ89-C3V9 DZ89-C4V7
    Text: DUAL ZENER DIODES IT T S E tllC O N D / IN T E R M E T A LL SGE D • Mbô2711 555 0GD2512 m IS I DZ89 Series 1W Dual Zener Diodes SOT-89A Plastic Package TA = 25 °C Two Zener diodes with common cathodes in one package. The common cathodes and the two anodes are each connected to a seperate pin.


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    PDF OT-89A DZ89-C3V9 DZ89-C4V3 DZ89-C4V7 DZ89-C5V1 DZ89-C5V6 DZ89-C6V2 DO-41 DO-35 DO-34 89a mark code smd C15 DO-34 zener smd marking 183 DZ89-C9V1 C6V2 ST SMD marking code 55A mark code T18 Zener diode smd marking e2

    Laser SDL 980

    Abstract: Laser SDL
    Text: M Ë ¡3 m S E R I E S t 03 980 nmr 150 mW CW InGaAs LASER DIODES 3 le y Features 980 nm Output Single Transverse Mode 150 mW cw Power Proven High Reliability Demonstrated High Coupling Effciency Erbium-Doped Fiber Amplifier Pumps Diffraction Limited Beam


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    PDF SDL-6500 6A05A; Laser SDL 980 Laser SDL

    c82 004

    Abstract: C4V7 517
    Text: N AUER PHILIPS/DISCRETE b=JE P • bb53^31 002b?ll 517 P hilips S em BZD23 series Voltage regulator diodes DESCRIPTION Glass-passivated diodes in hermetically sealed axial-leaded implosion diode ID glass


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    PDF BZD23 BZD23-C3V6 BZD23-C7V5 C7V5-C510 bb53R31 2b71R S0D81. c82 004 C4V7 517

    BZD23

    Abstract: c6v8 C510 bje 66 C82 diode BZD23-C3V6 BZD23-C7V5 C100 C110 C120
    Text: N AUER PHILIPS/DISCRETE b=iE D ^ 5 3 ^ 3 1 DDEb?ll 517 Philips Semiconductors_ r IVM uwt Voltage regulator diodes DESCRIPTION Glass-passivated diodes in hermetically sealed axial-leaded implosion diode ID glass envelopes. They are intended for


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    PDF bb53131 BZD23 BZD23-C3V6 BZD23-C7V5 C7V5-C510 bb53T31 D02ti713 MGA020 c6v8 C510 bje 66 C82 diode C100 C110 C120

    Untitled

    Abstract: No abstract text available
    Text: PD 9.1571 International IG R Rectifier IR G 4 R C 1 0 U D PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for medium operating frequencies 8-40 kHz in hard switching, >200


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    PDF O-252AA 140ns 4AS54S2