220v AC voltage stabilizer schematic diagram
Abstract: BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 2-6 Fiber Optic Connectors and Accessories . . . . . . . . . . . See Page 121 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 10-122 Fiber Optic Cable, Connectors, and Accessories . . . . . . See Pages 118-122
|
Original
|
P390-ND
P465-ND
P466-ND
P467-ND
LNG901CF9
LNG992CFBW
LNG901CFBW
LNG91LCFBW
220v AC voltage stabilizer schematic diagram
BA 49182
RJh 3047
rjh 3047 equivalent
a1458 opto
philips ecg master replacement guide
MOSFET, rjh 3077
sc1097
philips ecg semiconductors master replacement guide
Electronic ballast 40W using 13005 transistor
|
PDF
|
CS19-12H01
Abstract: CS8-12I02 CS45-16I01 TO-208AA CS23-08I02 T0-208AA CS19-12 T0208AA CS23 T0220AB
Text: ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TMpMCTOpbl $MpMbl IXYS np0M3B0flMTenb : IXYS f lM a n a 3 0 H p a 6 o H M X T e M n e p a iy p : o t - 4 0 ° a o K o fl: Tok CS8-12I02 CS19-12H01 CS23-08I02 CS45-16I01 [A] 25,0 29,0 50,0 75,0 HanpflweHMe
|
OCR Scan
|
flMana30H
ot-40Â
CS8-12I02
CS19-12H01
T0220AB
CS23-08I02
T0208AA
CS45-16I01
T0247AD
I0247AD
TO-208AA
T0-208AA
CS19-12
T0208AA
CS23
T0220AB
|
PDF
|
BYV255V200
Abstract: BYV255V-200 BYV54V200 DSEI2X61-12B BYV54V-200 DSEI2X121-02A 2X10 BYV42-200 BYV52PI200 DSEI2X31-06C
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics jen\ 495 739-09-95, 644-41-29 f lB O M H b ie B b in p A M M T e n b H b ie flM O A b i Kofl: [A] Hanp. [B] BYV255V200 BYV54V200 2x100 2x50 200 200 H eT K a T O fl ISOTOP v J P DSEI2X121-02A DSEI2X31-06C DSEI2X101-06A
|
OCR Scan
|
BYV255V200
2x100
BYV54V200
DSEI2X121-02A
DSEI2X31-06C
DSEI2X101-06A
DSEI2X31-12B
DSEI2X61-12B
MBR2545CT
BYV133/45-PHI
BYV255V-200
BYV54V-200
2X10
BYV42-200
BYV52PI200
|
PDF
|
SOT227B
Abstract: DSEI2X121-02A DSEI12-06A DSEI2X61-12b DSEI2*61-12 DSEI2X31-12B DSEI2*61 ixys dsei2x31-06c DSEP2X61-12A DSEP12-12A
Text: klH TEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten\ 495 739-09-95, 644-41-29 electronics flMOAbi FRED (Fast Recovery Epitaxial Diodes) $upMbi IXYS np0M3B0flMTenb f lM a n a 3 0 H p a ö o H M X T e M n e p a T y p Kofl: : IXYS : o t - 40oC f l o + 150oC V f npw [B]
|
OCR Scan
|
flnana30H
ot-40Â
DSEI12-06A
T0220AC
DSEP12-12A
DSEP30-03A
T0247AD
DSEI60-06A
SOT227B
DSEI2X121-02A
DSEI2X61-12b
DSEI2*61-12
DSEI2X31-12B
DSEI2*61
ixys dsei2x31-06c
DSEP2X61-12A
|
PDF
|
LS T73
Abstract: BFC42
Text: nil IF t i mi BFC42 SEME LAB 4TH GENERATION MOSFET T0247-AD Package Outline. Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 5 31 (0 209) 1 4» (0 0S8) rD i t 3S5 (0 140) 3 81 {Q 150) VDSS 1 (0 040) ^ Terminal 1 Terminal 3 I
|
OCR Scan
|
BFC42
T0247-AD
300est
380jiS
MIL-STD-750
A1331A7
LS T73
BFC42
|
PDF
|
BFC47
Abstract: No abstract text available
Text: Illl iF ti mi BFC47 SEME LAB 4TH GENERATION MOSFET T0247-AD Package Outline. Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS S 31 (0 2 0 9 ) 1 4P 10 0S 9) 'DSS 0*0(001<| I D(cont) 1 01 (0 0 4 0 ) R DS(on) " 1 0 5 (0 4 3 0 f
|
OCR Scan
|
BFC47
T0247-AD
MIL-STD-750
|
PDF
|
T0247AC
Abstract: IRG4PC50FD T0-220AB bup314 T0-247AC bup314d IRG4BC40U T0220AB IRG4PC50UD BUP212
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 electronics CunoBbie TpaH3MCTopbi IGBT copTMpoBKa no HanpflweHMro UCE TpaH3Mcrop IGBT (Insulated Gate Bipolar Transistor) npeflCTaBrmeT c o 6 om 6 M n o r m p H b iM T p a H 3 M C T o p c M3 o n M p o B a H H H M 3 a T B o p o M , y n p a B r m e M b iM H a n p a ^ e H M e M . O h x a p a K T e p M 3y e T c a b h c o k m m
|
OCR Scan
|
B03M0WH0CTb
npe06pa30Baiennx
paUP212
T0220AB
BUP213
BUP313
T0218AB
BUP313D
T0247AC
IRG4PC50FD
T0-220AB
bup314
T0-247AC
bup314d
IRG4BC40U
T0220AB
IRG4PC50UD
BUP212
|
PDF
|
IGBT 200A 1200V
Abstract: T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi h MOflynM IGBT b an^aBMTHOM nop^AKe BUP203 (T0220) KpaTKoe onMcaHMe MG50Q2YS40 BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s HGTG12N60A4D HGTG30N60B3D
|
OCR Scan
|
bup203
t0220)
BUP212
BUP213
BUP313
BUP313D
BUP314
BUP314D
GT20D101-T0s
GT20D201-T0s
IGBT 200A 1200V
T0247
T0220AB
BUP313D
IGBT IRG4BC20KD
igbt 20A 1200v
IGBT 1200V 60A
T0247A
BUP314D
MG50Q2YS40
|
PDF
|
KL SN 102 94v-0
Abstract: diode EGP 30D circuit diagram of 5kw smps full bridge MELF ZENER DIODE color bands blue y-349 diode GI 2W06G DO-213AB smd diode color marking code 6j 507 SMD TRANSISTOR smd diode marking g2a zener Marking BJ9
Text: General Instrument / Power Semiconductor Division / I * r .jr > / INTRODUCTION General Instrument Corporation is a world leader in developing technology, systems and product solutions for the interactive delivery o f video and data. G l’s success results
|
OCR Scan
|
|
PDF
|
BFC43
Abstract: No abstract text available
Text: mi iP É i llll BFC43 SEME LAB 4TH GENERATION MOSFET T0247-AD Package Outline. Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS VDSS I D(cont) !DS(on) Terminal 1 Terminal 3 Gate Source Terminal 2 ABSOLUTE MAXIMUM RATINGS V DSS
|
OCR Scan
|
BFC43
T0247-AD
MIL-STD-750
BFC43
|
PDF
|
BYS21-45
Abstract: BYS26-45 BYS21-90 BYS26 BYS21 BYS22-45 1N5817 1N5818 MBR2 1N5822
Text: klH TEPTEKC ww w.i-t.ru ¡nfo@ i-t.ru t B b i n p A M M T e n b H b ie A M O A b i Kofl: electronics en\ 095 739-09-95 c 6apbepoM 1N5817 1N5818 1N5819 BYS21-45 SB160 BYS21-90 BYS22-45 VRmax [B] 20 30 40 45 60 90 90 iFmax [A] 1,0 1,0 1,0 1,0 1,0 1,0 2,0 V f npw
|
OCR Scan
|
1N5817
1N5818
1N5819
BYS21-45
SB160
BYS21-90
BYS22-45
1N5822
BYS26-45
SB360
BYS26
BYS21
MBR2
|
PDF
|
ixfh26n60q
Abstract: 2SK2333 2SK2761 IRF1405 BUZ345 BSS89 irfp250n P9NB60 irfp260n 2sk2671
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi N-MOSFET copTMpoBKa no HanpflweHMro UDS Kofl: SI4466DY SI4966DY SI9925DY SI9942DY 2SK1388 IRF7319 IRF7413 IRF7455 IRL2203N IRL3103 IRL3713 IRL3803 IRL3803S IRLL2703 SI4404DY SI4412ADY
|
OCR Scan
|
SI4466DY
SI4966DY
SI9925DY
SI9942DY
2SK1388
T0220AB
IRF7319
IRF7413
IRF7455
IRL2203N
ixfh26n60q
2SK2333
2SK2761
IRF1405
BUZ345
BSS89
irfp250n
P9NB60
irfp260n
2sk2671
|
PDF
|
Untitled
Abstract: No abstract text available
Text: D 1 X Y S Preliminary data HiPerFAST IGBT with Diode IXGX50N60AU1 IXGX50N60AU1S Combi Pack v CES ^C25 vv CE sat tfi = 600 V = 75 A = 2.7 V = 275 ns TO-247 Hole-less SMD (50N 60AU 1S) Symbol Test Conditions Maximum Ratings v CES T j = 25°C to 150°C 600
|
OCR Scan
|
IXGX50N60AU1
IXGX50N60AU1S
O-247
|
PDF
|
1ALF
Abstract: No abstract text available
Text: HER161PT TSC S thru HER167PT 16.0 AMPS. GLASS PASSIVATED HIGH EFFICIENCY RECTIFIERS VOLTAGE RANGE 50 tc 800 V olts CURRENT 16.0 A-poros T0-3P/T0-247AD FEATURES * Dual rectifier construction, positive center-tap * Plastic package has Underwriters Laboratory
|
OCR Scan
|
HER161PT
HER167PT
T0-3P/T0-247AD
O-3P/TO-247AD
MIL-STD750.
600-SOOV
50mVp-pi
fl35S4b
1ALF
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: lili mi SEME BFC48 LAB 4TH GENERATION MOSFET T0247-AD Package Outline. Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS ' 5 31 (0 209) 1 4» IP 0S9) 'DSS 0 40 (0 0161 0 70 (0 031) I D(cont) 1 01 (0 0 4 0 ) ^ R DS(on) I 10 5 |0 430)J
|
OCR Scan
|
BFC48
T0247-AD
MIL-STD-750
|
PDF
|
Untitled
Abstract: No abstract text available
Text: lili e FFe iiii SEME BFC51 LAB 4TH GENERATION MOSFET T0247-AD Package Outline. Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1 5 31 (0 20» ) t * 9 (0 0 5 8 ) - fs|_ 3 J 5 (0 14 0) 3 11 (0 ISO) 'DSS 0 4 0 (0 016) I D(cont)
|
OCR Scan
|
BFC51
T0247-AD
380fj
MIL-STD-750
|
PDF
|
sot23 BS170
Abstract: 2SK2671 P3NB60 IXFN27N80 IRFL014N STP22NE10L irf6348 IRF7305 rfp40n IXTN21N100
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi N-MOSFET (copTMpoBKa no TOKy lD) Kofl: BS107 BSS123 BS170 BSS138 BS108 BSN304 BSS89 IRFD310 IRFD420 IRFD210 IRFD320 2N7002 IRFD220 IRFL210 IRFD110 IRLD110 IRFD120
|
OCR Scan
|
BS107
BSS123
BS170
BSS138
BS108
BSN304
BSS89
IRFD310
IRFD420
IRFD210
sot23 BS170
2SK2671
P3NB60
IXFN27N80
IRFL014N
STP22NE10L
irf6348
IRF7305
rfp40n
IXTN21N100
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 C u n o B b ie T p a H 3 M C T o p b i IG B T IX Y S C #epa npMMeHeHMa: b n po M biw ne rn-ib ix ycTaHOBKax M a n o fi m cpeflHeM m o w ,h o c tm , b npMBOAHbix CMCTeMax, b yd p o M C T B a x ynpaB ^eH M a, b 6 ecn p0B 0A H bix 6 no K ax riMTaHMA Arm
|
OCR Scan
|
3S88SSS588S8888gÂ
|
PDF
|
EGP300
Abstract: FEPI6GT ug2d equivalent FEP16FT equivalent fepi6 FEP30FP DO-214M FEP6DT equivalent FES16CT FES16DT
Text: FA S T E F F IC IE N T R E C T IF IE R S 10 A CASE TYPE 0.50 0.60 D0-Z13AA MINI'MELF UG06 1.0 00- 204AL DO-i?04AP 00-2 04AL «► I D0-204AP | I1 II % I V rrm (VOLTS) 50 fcGLMA UG06A# F6P1GA UF4001# FE1A UG1A# GI1001 100 COI M B UG06B# ESP18B UF4002# FE1B
|
OCR Scan
|
D0-Z13AA
204AL
D0-204AP
UF4005#
UF4006#
UF4007#
BYV26D
BYV26E
EGL34C
EGL34D
EGP300
FEPI6GT
ug2d equivalent
FEP16FT equivalent
fepi6
FEP30FP
DO-214M
FEP6DT equivalent
FES16CT
FES16DT
|
PDF
|
AH DO214
Abstract: SMC C96
Text: v G eneral Se m i c o n d u c t o r PACKAG ING < Y >/.>/: V STANDARD ANTI-STATIC PACKAGE PACKAGE CODE CODES PACKAGING DESCRIPTION 1 2 2B 2D 2E 2F 2J 2L 2M 3 4 4A 4B 4C 4D 5 5C 6 7 8 9 51 52 2C 26 2K 53 54 4E 4F 4G 4H 55 5A 5B 43 44 56 57 58 59 9A 9C 60 61
|
OCR Scan
|
DO-214/215AA
DQ-218AA
DO-218AA
DO-214/215AC
DO-214BA
O-269AA
O-263AB
DO-218
AH DO214
SMC C96
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MBR4035PT AND MBR4045PT SCHOTTKY RECTIFIER VOLTA GE RANGE - 35 and 45 Volts CURRENT - 4 0 . 0 Amperes FEATURES T0-247AD 1— » .078 REF Cl.M — r . .203 5.16) .193(4.90) .313(7.95 •085 (2J6) .142(3.6) .07Ç(1.901 . £ IV .170 (4.3) _i- 10' TYP. V B0I H SIDES
|
OCR Scan
|
MBR4035PT
MBR4045PT
T0-247AD
|
PDF
|
Untitled
Abstract: No abstract text available
Text: A d v a n ced P o w er Te c h n o l o g y O D Ô S APT8075BNR APT8090BNR 800V 800V POWER MOS IVe 13.0A 0.7512 12.0A 0.90U UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V Parameter 'd C ontinuous Drain C urrent @ Tc - 25°C
|
OCR Scan
|
APT8075BNR
APT8090BNR
APT8075BNR
APT8090BNR
MIL-STD-750
T0-247AD
|
PDF
|