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    Vishay Intertechnologies FEP30JP-E3/45

    Rectifiers 30 Amp 600 Volt
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI FEP30JP-E3/45 Tube 6,390 30
    • 1 -
    • 10 -
    • 100 $1.48
    • 1000 $1.3
    • 10000 $1.3
    		Buy Now

    Vishay Intertechnologies FEP30HP-E3/45

    Rectifiers 30 Amp 500 Volt
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI FEP30HP-E3/45 Tube 750
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.42
    • 10000 $1.36
    		Buy Now

    T0247AD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    220v AC voltage stabilizer schematic diagram

    Abstract: BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 2-6 Fiber Optic Connectors and Accessories . . . . . . . . . . . See Page 121 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 10-122 Fiber Optic Cable, Connectors, and Accessories . . . . . . See Pages 118-122


    Original     		PDF P390-ND P465-ND P466-ND P467-ND LNG901CF9 LNG992CFBW LNG901CFBW LNG91LCFBW 220v AC voltage stabilizer schematic diagram BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor

    CS19-12H01

    Abstract: CS8-12I02 CS45-16I01 TO-208AA CS23-08I02 T0-208AA CS19-12 T0208AA CS23 T0220AB
    Text: ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TMpMCTOpbl $MpMbl IXYS np0M3B0flMTenb : IXYS f lM a n a 3 0 H p a 6 o H M X T e M n e p a iy p : o t - 4 0 ° a o K o fl: Tok CS8-12I02 CS19-12H01 CS23-08I02 CS45-16I01 [A] 25,0 29,0 50,0 75,0 HanpflweHMe


    OCR Scan     		PDF flMana30H ot-40Â CS8-12I02 CS19-12H01 T0220AB CS23-08I02 T0208AA CS45-16I01 T0247AD I0247AD TO-208AA T0-208AA CS19-12 T0208AA CS23 T0220AB

    BYV255V200

    Abstract: BYV255V-200 BYV54V200 DSEI2X61-12B BYV54V-200 DSEI2X121-02A 2X10 BYV42-200 BYV52PI200 DSEI2X31-06C
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics jen\ 495 739-09-95, 644-41-29 f lB O M H b ie B b in p A M M T e n b H b ie flM O A b i Kofl: [A] Hanp. [B] BYV255V200 BYV54V200 2x100 2x50 200 200 H eT K a T O fl ISOTOP v J P DSEI2X121-02A DSEI2X31-06C DSEI2X101-06A


    OCR Scan     		PDF BYV255V200 2x100 BYV54V200 DSEI2X121-02A DSEI2X31-06C DSEI2X101-06A DSEI2X31-12B DSEI2X61-12B MBR2545CT BYV133/45-PHI BYV255V-200 BYV54V-200 2X10 BYV42-200 BYV52PI200

    SOT227B

    Abstract: DSEI2X121-02A DSEI12-06A DSEI2X61-12b DSEI2*61-12 DSEI2X31-12B DSEI2*61 ixys dsei2x31-06c DSEP2X61-12A DSEP12-12A
    Text: klH TEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten\ 495 739-09-95, 644-41-29 electronics flMOAbi FRED (Fast Recovery Epitaxial Diodes) $upMbi IXYS np0M3B0flMTenb f lM a n a 3 0 H p a ö o H M X T e M n e p a T y p Kofl: : IXYS : o t - 40oC f l o + 150oC V f npw [B]


    OCR Scan     		PDF flnana30H ot-40Â DSEI12-06A T0220AC DSEP12-12A DSEP30-03A T0247AD DSEI60-06A SOT227B DSEI2X121-02A DSEI2X61-12b DSEI2*61-12 DSEI2X31-12B DSEI2*61 ixys dsei2x31-06c DSEP2X61-12A

    LS T73

    Abstract: BFC42
    Text: nil IF t i mi BFC42 SEME LAB 4TH GENERATION MOSFET T0247-AD Package Outline. Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 5 31 (0 209) 1 4» (0 0S8) rD i t 3S5 (0 140) 3 81 {Q 150) VDSS 1 (0 040) ^ Terminal 1 Terminal 3 I


    OCR Scan     		PDF BFC42 T0247-AD 300est 380jiS MIL-STD-750 A1331A7 LS T73 BFC42

    BFC47

    Abstract: No abstract text available
    Text: Illl iF ti mi BFC47 SEME LAB 4TH GENERATION MOSFET T0247-AD Package Outline. Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS S 31 (0 2 0 9 ) 1 4P 10 0S 9) 'DSS 0*0(001<| I D(cont) 1 01 (0 0 4 0 ) R DS(on) " 1 0 5 (0 4 3 0 f


    OCR Scan     		PDF BFC47 T0247-AD MIL-STD-750

    T0247AC

    Abstract: IRG4PC50FD T0-220AB bup314 T0-247AC bup314d IRG4BC40U T0220AB IRG4PC50UD BUP212
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 electronics CunoBbie TpaH3MCTopbi IGBT copTMpoBKa no HanpflweHMro UCE TpaH3Mcrop IGBT (Insulated Gate Bipolar Transistor) npeflCTaBrmeT c o 6 om 6 M n o r m p H b iM T p a H 3 M C T o p c M3 o n M p o B a H H H M 3 a T B o p o M , y n p a B r m e M b iM H a n p a ^ e H M e M . O h x a p a K T e p M 3y e T c a b h c o k m m


    OCR Scan     		PDF B03M0WH0CTb npe06pa30Baiennx paUP212 T0220AB BUP213 BUP313 T0218AB BUP313D T0247AC IRG4PC50FD T0-220AB bup314 T0-247AC bup314d IRG4BC40U T0220AB IRG4PC50UD BUP212

    IGBT 200A 1200V

    Abstract: T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi h MOflynM IGBT b an^aBMTHOM nop^AKe BUP203 (T0220) KpaTKoe onMcaHMe MG50Q2YS40 BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s HGTG12N60A4D HGTG30N60B3D


    OCR Scan     		PDF bup203 t0220) BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s IGBT 200A 1200V T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40

    KL SN 102 94v-0

    Abstract: diode EGP 30D circuit diagram of 5kw smps full bridge MELF ZENER DIODE color bands blue y-349 diode GI 2W06G DO-213AB smd diode color marking code 6j 507 SMD TRANSISTOR smd diode marking g2a zener Marking BJ9
    Text: General Instrument / Power Semiconductor Division / I * r .jr > / INTRODUCTION General Instrument Corporation is a world leader in developing technology, systems and product solutions for the interactive delivery o f video and data. G l’s success results


    OCR Scan     		PDF

    BFC43

    Abstract: No abstract text available
    Text: mi iP É i llll BFC43 SEME LAB 4TH GENERATION MOSFET T0247-AD Package Outline. Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS VDSS I D(cont) !DS(on) Terminal 1 Terminal 3 Gate Source Terminal 2 ABSOLUTE MAXIMUM RATINGS V DSS


    OCR Scan     		PDF BFC43 T0247-AD MIL-STD-750 BFC43

    BYS21-45

    Abstract: BYS26-45 BYS21-90 BYS26 BYS21 BYS22-45 1N5817 1N5818 MBR2 1N5822
    Text: klH TEPTEKC ww w.i-t.ru ¡nfo@ i-t.ru t B b i n p A M M T e n b H b ie A M O A b i Kofl: electronics en\ 095 739-09-95 c 6apbepoM 1N5817 1N5818 1N5819 BYS21-45 SB160 BYS21-90 BYS22-45 VRmax [B] 20 30 40 45 60 90 90 iFmax [A] 1,0 1,0 1,0 1,0 1,0 1,0 2,0 V f npw


    OCR Scan     		PDF 1N5817 1N5818 1N5819 BYS21-45 SB160 BYS21-90 BYS22-45 1N5822 BYS26-45 SB360 BYS26 BYS21 MBR2

    ixfh26n60q

    Abstract: 2SK2333 2SK2761 IRF1405 BUZ345 BSS89 irfp250n P9NB60 irfp260n 2sk2671
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi N-MOSFET copTMpoBKa no HanpflweHMro UDS Kofl: SI4466DY SI4966DY SI9925DY SI9942DY 2SK1388 IRF7319 IRF7413 IRF7455 IRL2203N IRL3103 IRL3713 IRL3803 IRL3803S IRLL2703 SI4404DY SI4412ADY


    OCR Scan     		PDF SI4466DY SI4966DY SI9925DY SI9942DY 2SK1388 T0220AB IRF7319 IRF7413 IRF7455 IRL2203N ixfh26n60q 2SK2333 2SK2761 IRF1405 BUZ345 BSS89 irfp250n P9NB60 irfp260n 2sk2671

    Untitled

    Abstract: No abstract text available
    Text: D 1 X Y S Preliminary data HiPerFAST IGBT with Diode IXGX50N60AU1 IXGX50N60AU1S Combi Pack v CES ^C25 vv CE sat tfi = 600 V = 75 A = 2.7 V = 275 ns TO-247 Hole-less SMD (50N 60AU 1S) Symbol Test Conditions Maximum Ratings v CES T j = 25°C to 150°C 600


    OCR Scan     		PDF IXGX50N60AU1 IXGX50N60AU1S O-247

    1ALF

    Abstract: No abstract text available
    Text: HER161PT TSC S thru HER167PT 16.0 AMPS. GLASS PASSIVATED HIGH EFFICIENCY RECTIFIERS VOLTAGE RANGE 50 tc 800 V olts CURRENT 16.0 A-poros T0-3P/T0-247AD FEATURES * Dual rectifier construction, positive center-tap * Plastic package has Underwriters Laboratory


    OCR Scan     		PDF HER161PT HER167PT T0-3P/T0-247AD O-3P/TO-247AD MIL-STD750. 600-SOOV 50mVp-pi fl35S4b 1ALF

    Untitled

    Abstract: No abstract text available
    Text: lili mi SEME BFC48 LAB 4TH GENERATION MOSFET T0247-AD Package Outline. Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS ' 5 31 (0 209) 1 4» IP 0S9) 'DSS 0 40 (0 0161 0 70 (0 031) I D(cont) 1 01 (0 0 4 0 ) ^ R DS(on) I 10 5 |0 430)J


    OCR Scan     		PDF BFC48 T0247-AD MIL-STD-750

    Untitled

    Abstract: No abstract text available
    Text: lili e FFe iiii SEME BFC51 LAB 4TH GENERATION MOSFET T0247-AD Package Outline. Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1 5 31 (0 20» ) t * 9 (0 0 5 8 ) - fs|_ 3 J 5 (0 14 0) 3 11 (0 ISO) 'DSS 0 4 0 (0 016) I D(cont)


    OCR Scan     		PDF BFC51 T0247-AD 380fj MIL-STD-750

    sot23 BS170

    Abstract: 2SK2671 P3NB60 IXFN27N80 IRFL014N STP22NE10L irf6348 IRF7305 rfp40n IXTN21N100
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi N-MOSFET (copTMpoBKa no TOKy lD) Kofl: BS107 BSS123 BS170 BSS138 BS108 BSN304 BSS89 IRFD310 IRFD420 IRFD210 IRFD320 2N7002 IRFD220 IRFL210 IRFD110 IRLD110 IRFD120


    OCR Scan     		PDF BS107 BSS123 BS170 BSS138 BS108 BSN304 BSS89 IRFD310 IRFD420 IRFD210 sot23 BS170 2SK2671 P3NB60 IXFN27N80 IRFL014N STP22NE10L irf6348 IRF7305 rfp40n IXTN21N100

    Untitled

    Abstract: No abstract text available
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 C u n o B b ie T p a H 3 M C T o p b i IG B T IX Y S C #epa npMMeHeHMa: b n po M biw ne rn-ib ix ycTaHOBKax M a n o fi m cpeflHeM m o w ,h o c tm , b npMBOAHbix CMCTeMax, b yd p o M C T B a x ynpaB ^eH M a, b 6 ecn p0B 0A H bix 6 no K ax riMTaHMA Arm


    OCR Scan     		PDF 3S88SSS588S8888gÂ

    EGP300

    Abstract: FEPI6GT ug2d equivalent FEP16FT equivalent fepi6 FEP30FP DO-214M FEP6DT equivalent FES16CT FES16DT
    Text: FA S T E F F IC IE N T R E C T IF IE R S 10 A CASE TYPE 0.50 0.60 D0-Z13AA MINI'MELF UG06 1.0 00- 204AL DO-i?04AP 00-2 04AL «► I D0-204AP | I1 II % I V rrm (VOLTS) 50 fcGLMA UG06A# F6P1GA UF4001# FE1A UG1A# GI1001 100 COI M B UG06B# ESP18B UF4002# FE1B


    OCR Scan     		PDF D0-Z13AA 204AL D0-204AP UF4005# UF4006# UF4007# BYV26D BYV26E EGL34C EGL34D EGP300 FEPI6GT ug2d equivalent FEP16FT equivalent fepi6 FEP30FP DO-214M FEP6DT equivalent FES16CT FES16DT

    AH DO214

    Abstract: SMC C96
    Text: v G eneral Se m i c o n d u c t o r PACKAG ING < Y >/.>/: V STANDARD ANTI-STATIC PACKAGE PACKAGE CODE CODES PACKAGING DESCRIPTION 1 2 2B 2D 2E 2F 2J 2L 2M 3 4 4A 4B 4C 4D 5 5C 6 7 8 9 51 52 2C 26 2K 53 54 4E 4F 4G 4H 55 5A 5B 43 44 56 57 58 59 9A 9C 60 61


    OCR Scan     		PDF DO-214/215AA DQ-218AA DO-218AA DO-214/215AC DO-214BA O-269AA O-263AB DO-218 AH DO214 SMC C96

    Untitled

    Abstract: No abstract text available
    Text: MBR4035PT AND MBR4045PT SCHOTTKY RECTIFIER VOLTA GE RANGE - 35 and 45 Volts CURRENT - 4 0 . 0 Amperes FEATURES T0-247AD 1— » .078 REF Cl.M — r . .203 5.16) .193(4.90) .313(7.95 •085 (2J6) .142(3.6) .07Ç(1.901 . £ IV .170 (4.3) _i- 10' TYP. V B0I H SIDES


    OCR Scan     		PDF MBR4035PT MBR4045PT T0-247AD

    Untitled

    Abstract: No abstract text available
    Text: A d v a n ced P o w er Te c h n o l o g y O D Ô S APT8075BNR APT8090BNR 800V 800V POWER MOS IVe 13.0A 0.7512 12.0A 0.90U UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V Parameter 'd C ontinuous Drain C urrent @ Tc - 25°C


    OCR Scan     		PDF APT8075BNR APT8090BNR APT8075BNR APT8090BNR MIL-STD-750 T0-247AD